| 场板结终端对金刚石SBD内部电场分布及击穿特性的影响 |
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| 引用本文： | 王进军,王晓亮,张景文,王侠.场板结终端对金刚石SBD内部电场分布及击穿特性的影响[J].发光学报,2016,37(4):432-438. |
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| 作者姓名： | 王进军 王晓亮 张景文 王侠 |
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| 作者单位： | 1. 西安交通大学 陕西省信息光电子技术重点实验室, 陕西 西安 710049;
2. 陕西科技大学 理学院, 陕西 西安 710021;
3. 中国科学院半导体研究所 半导体材料科学重点实验室, 北京 100083;
4. 西安科技大学 电气与控制工程学院, 陕西 西安 710054 |
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| 基金项目： | 2015年陕西省教育厅专项科研计划(15JK1096)资助项目 |
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| 摘 要： | 建立了场板结终端对金刚石肖特基势垒二极管(SBD)的数值模拟模型,采用Silvaco软件中的器件仿真工具ATLAS模拟了场板长度L、绝缘层厚度TOX、衬底掺杂浓度NB、场板结构形状对器件内部电场分布以及击穿电压的影响,并对结果进行了物理分析和解释。结果表明:当TOX=0.4μm、NB=1015cm-3、L在0~0.2μm范围内时,击穿电压随着L的增加而增加;L0.2μm后,击穿电压开始下降。当L=0.2μm、NB=1015cm-3、TOX在0.1~0.4μm范围内时,击穿电压随着TOX的增加而增加;TOX0.4μm后,击穿电压开始下降。当L=0.2μm、TOX=0.4μm、NB=1015cm-3时,器件的击穿电压达到最大的1 873 k V。与普通场板结构相比,采用台阶场板可以更加有效地提高器件的击穿电压。
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| 关 键 词： | 场板结终端 金刚石SBD 电场分布 击穿电压 |
| 收稿时间： | 2015-12-21 |
Influence of Field Plate Terminal on The Electric Field Distribution and Breakdown Characteristics of Diamond SBD |
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| WANG Jin-jun;WANG Xia.Influence of Field Plate Terminal on The Electric Field Distribution and Breakdown Characteristics of Diamond SBD[J].Chinese Journal of Luminescence,2016,37(4):432-438. |
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| Authors: | WANG Jin-jun;WANG Xia |
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| Institution: | 1. Shaanxi Key Laboratory of Photonics Technology for Information, Xi'an Jiaotong University, Xi'an 710049, China;
2. College of Science, Shaanxi University of Science & Technology, Xi'an 710021, China;
3. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4. College of Electrical and Control Engineering, Xi'an University of Science & Technology, Xi'an 710054, China |
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| Abstract: | Numerical simulation model of field plate termination diamond Schottky barrier diode ( SBD) was established in this paper, the influence of the field plate length L, insulating layer thickness TOX, substrate doping concentration NB, and the structure shape of the field plate on the electric field distribution inside the device and the influence of breakdown voltage of diamond SBD were numerical simulated by Silvaco device simulation tools ATLAS. The results of numerical simu-lation were analyzed and explained physically. The breakdown voltage increases with the increasing length of the field plate within the range of 0. 0 to 0. 2μm when TOX=0. 4μm and NB=1015 cm-3 , and decreases when L>0. 2 μm. The breakdown voltage increases with the increasing of insulating layer thickness TOX within the range of 0. 1 to 0. 4 μm when L=0. 2 μm and NB =1015 cm-3 , and decreases when TOX>0. 4 μm. The breakdown voltage of the device reaches its maximum 1 873 kV when L=0. 2μm, TOX=0. 4μm, and NB=1015 cm-3 . The steps field plate can effectively improve the breakdown voltage of the device, compared with the ordinary field plate structure. |
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| Keywords: | field plate termination diamond Schottky barrier diode electric field distribution breakdown voltage |
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