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多级衍射元件在衍射望远系统消色差领域的应用逐渐成为热点。基于赛德尔三级像差理论,对由多级衍射光学元件、折射光学元件和菲涅耳衍射元件三元件组合的光学系统展开分析。在400~700 nm工作波段,通过数学推导校正表面系统的球差,同时实现消色差及复消色差。对系统在平面、球面和非球面不同面型下的成像质量进行比对。当系统为非球面设计时,调制传递函数在截止频率50 lp/mm处高于0.6683,优于平面和球面设计,衍射圈入能量更高,成像质量更好。该研究为将多级衍射元件组合系统运用到消色差领域提供了参考。 相似文献
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菲涅耳微透镜行列阵衍射效率的测试与分析 总被引:1,自引:0,他引:1
归纲了目前二元位相型菲涅耳微透镜列阵衍射效率测试中所用各种衍射效率的不同定义,提出规范定义的建议。并设计了测量衍射效率的系统,方法简单易行,适于测试具有微小单元尺寸的菲涅耳微透镜列阵的衍射效率。 相似文献
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利用MSC1210单片机改造了衍射条纹采集系统,设计并制作了基于MSC1210单片机的光强采集和数字式位移测量系统,上位机采用LABWINDOWS/CVI软件编程,方便实用地完成了衍射条纹采集光学实验. 相似文献
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激光告警系统通过提取来袭激光的相关参数进行告警定位,其角度定位精度直接与战场生存能力相关。为了有效提高激光告警系统的角度定位精度,基于光栅衍射型激光告警原理,提出一种高精度测量来袭激光参数的算法。对激光告警系统进行标定,用高斯拟合法精确提取出衍射光斑标定图片的0级光斑中心,将来袭激光角度与对应角度的光斑中心进行拟合,根据拟合结果确定任意角度的光斑衍射图像对应的来袭激光角度参数。实验结果表明,方位角测量误差优于0.29°,俯仰角测量误差优于0.38°。该算法有效提高了激光告警系统的测算精度。 相似文献
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We study spectral properties of the discrete Laplacian H on the half space Z+
d+1 = Zd× Z+ with a boundary condition (n,-1) = tan( ... n + )(n,0), where [0,1]d. We denote by H0 the Dirichlet Laplacian on Z+
d+1. Whenever is independent over rationals (H) = R. Khoruzenko and Pastur have shown for a set of 's of Lebesgue measure 1, the spectrum of H on R\ (H0) is pure point and that corresponding eigenfunctions decay exponentially. In this Letter we show that if is independent over rationals, then the spectrum of H on the set (H0) is purely absolutely continuous. 相似文献
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Among the different properties of the hydrophobic semiconductor surfaces, self-cleaning promoted by solar illumination is probably one of the most attractive from the technological point of view. The use of sonochemistry for nanomaterials' synthesis has been recently employed for the associated shorter reaction times and efficient route for control over crystal growth and the management of the resulting material's photocatalytic properties. Moreover, the sol–gel method coupled to sonochemistry modifies the chemical environment, with reactive species such as •OH and H2O2, which yield a homogeneous synthesis. Therefore, in the following investigation, the sol–gel method was coupled to sonochemistry to synthesize a SiO2@TiO2 composite, for which the sonochemical amplitude of irradiation was varied to determine its effect on the morphology and mechanical and self-cleaning properties. SEM and AFM characterized the samples of SiO2@TiO2 composite, and while the micrographs indicate that a high ultrasonic energy results in an amorphous SiO2@TiO2 composite with a low rugosity, which was affected in the determination of the contact angle on the surface. On the other hand, FTIR analysis suggests a significant change in both SiO2-SiO and SiO2-TiO2 chemical bonds with changes in vibrations and frequency, corroborating an important influence of the sonochemical energy contribution to the hydrolysis process. Raman spectroscopy confirms the presence of an amorphous phase of silicon dioxide; however, the vibrations of TiO2 were not visible. The evaluation of hydrophobic and self-cleaning properties shows a maximum of ultrasonic energy needed to improve the contact angle and rhodamine B (RhB) removal. 相似文献
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基于密度泛函理论的第一性原理方法研究了BiOCl{001}的三种不同终端面({001}-1Cl, {001}-BiO 和{001}-2Cl)的表面弛豫、能带结构、电子态密度和表面能. 计算结果表明: {001}-1Cl, {001}-BiO和{001}-2Cl表面均发生明显弛豫, 而在双Cl原子层处的层间距变化较大, 但未出现振荡弛豫现象, 其中{001}-1Cl表面弛豫较小. 与体相BiOCl电子结构相比, BiOCl{001}面具有较窄的带隙宽度, 并呈现较强局域性:对于{001}-BiO表面, 其导带与价带均往低能方向发生较大移动, 并且在导带底部出现表面态; 而{001}-2Cl表面的表面态主要出现在价带顶; {001}-1Cl表面的带隙中则无表面态产生; 表面态的出现导致{001}-BiO面和{001}-2Cl面带隙明显减小. BiOCl{001}三种终端表面的表面能分析结果表明, {001}-1Cl表面的表面能最小(0.09206 J·m-2), 结构最稳定, 而{001}-BiO表面和{001}-2Cl表面的表面能分别为2.392和2.461 J·m-2. 理论预测{001}-BiO表面和{001}-2Cl表面具有较高的活性, 但在BiOCl晶体生长过程中不易暴露. 本文计算结果为实验获得BiOCl高活性面{001}给予了基础理论解释, 进一步为BiOCl新型光催化材料的应用研究提供理论指导.
关键词:
BiOCl{001}表面
表面弛豫
表面能
第一性原理 相似文献
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Expressions of the radius and the surface tension of surface of tension in terms of the pressure distribution for nanoscale liquid threads 下载免费PDF全文
The expressions of the radius and the surface tension of surface of tension Rs and γs in terms of the pressure distribution for nanoscale liquid threads are of great importance for molecular dynamics (MD) simulations of the interfacial phenomena of nanoscale fluids; these two basic expressions are derived in this paper. Although these expressions were derived first in the literature[Kim B G, Lee J S, Han M H, and Park S, 2006 Nanoscale and Microscale Thermophysical Engineering, 10, 283] and used widely thereafter, the derivation is wrong both in logical structure and physical thought. In view of the importance of these basic expressions, the logic and physical mistakes appearing in that derivation are pointed out. 相似文献
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Summary If the applied electric field is perpendicular to the surface of the MOS structure, the conduction band of the semiconductor
near the oxide-semiconductor interface will be curved. The quantized energy levels for electrons in a surface potential well
will be given by the triangular-potential-well approximation. For a moderately lightly doped semiconductor, the Fermi level
will be sufficiently lower than the bottom of the conductor band. By adjusting the applied field, the surface quantized levels
will be lifted up above the Fermi level and the radiative transition between the quantized levels will be possible. Thus the
line emission at the submillimetre wave band will be expected.
Riassunto Se il campo eletrico applicato è perpendicolare alla superficie della struttura MOS, la banda di conduzione del semiconduttore vicino all'interfaccia ossido-semiconduttore sarà curva. I livelli di energia quantizzati per elettroni in un pozzo di potenziale di superficie saranno dati dall'approssimazione del pozzo di potenziale triangolare. Per un semiconduttore leggermente drogato, il livello di Fermi sarà sufficientemente piú basso del fondo della banda del conduttore. Sistemando il campo applicato, i livelli quantizzati di superficie saranno sollevati sopra il livello di Fermi e la transizione radiativa tra i livelli quantizzati sarà possibile. Così ci si attende l'emissione di linea alla banda d'onda submillimetrica.
Резюме Если приложенное электрическое поле перпендикулярно поверхности МОП структуры, то зона проводимости полупроводника вблизи границы раздела окисел-полупроводник будет искривлена. Квантованные уровни энергии для электронов в потенциальной яме поверхности приближенно определяются треугольной потенциальной ямой. Для умеренно легированного полупроводника уровень Ферми будет существенно ниже, чем дно зоны проводимости. Изменяя величину приложенного поля, поверхностые квантованные уровни поднимаются выше уровня Ферми и становится возможным радиационный переход между квантованными уровнями. Таким образом, можно ожидать линейное излучение в области субмиллиметровых волн.相似文献
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测量金属膜粗糙度的表面等离子激元光谱方法 总被引:1,自引:1,他引:0
介绍了确定金属膜表面粗糙度的表面等离子激元光谱方法。测量了二种银膜在表面等离子激元激发条件下的光散射强度分布。通过与理论计算的拟合,得到了描写这二种银膜/空气同粗糙界面的特征参数。 相似文献
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以互补频率选择表面 (CFSS)结构的强耦合作用为基础, 设计一种具有极化分离作用的频率选择表面 (PSS), 当容性表面与感性表面沿周期排布方向具有横向位移时, CFSS成为具有TM带通、TE带阻的极化分离结构. 建立等效电路模型分析PSS结构极化分离原理, 采用耦合积分方程法计算极化分离结构的传输特性以及容性表面和感性表面的电场分布. 理论分析与实验测试结果均表明: PSS具有良好的极化分离特性和角度稳定性, 为极化波产生器和极化分离结构的设计提供借鉴.
关键词:
频率选择表面
极化选择
互补屏频率选择表面 相似文献
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表面微观形貌测量及其参数评定的发展趋势 总被引:7,自引:0,他引:7
由于表面加工质量的不断提高,对微观形貌测量技术提出了更高的要求。传统触针式轮廓仪测量具有稳定、可靠、测量动态范围大等优点,但会划伤被测表面;而非接触式形貌测量技术克服了接触式测量易划伤表面的缺点,它主要包括光学散射法、各种光探针法、光学显微干涉法以及采用SEM、STM、光子隧道显微镜和原子力显微镜(AFM)来探测表面微观形貌的方法。各种测量方法均有其优点和局限性。光学测量方法由于受衍射限制,使其横向分辨率很难提高,在测量大斜率及台阶表面时,测量误差很大。而AFM被公认为是一种理想的表面微观形貌测量方法。此外,在表面微观形貌评定方面,国际上正积极探索各种三维评定参数以取代原来的二维参数。 相似文献
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In this paper, we introduce a one-form associated to a Lagrangian immersion from Riemann surface into the complex hyperquadric . It is proved that is minimal if and only if is vanishing and is H-minimal if and only if is holomorphic. As an application, a family of -equivariant minimal Lagrangian tori in are obtained. 相似文献
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The surface segregation energies for a single metal impurity to the (100) surface of nine fcc metals (Cu, Ag, Au, Ni, Pd,
Pt, Rh, Al and Ir) have been calculated using the MAEAM and molecular dynamics (MD) simulation. The results show that the
effect of the surface is down to the fourth-layer and an oscillatory or monotonic damping (|E
1| > |E
2| > |E
3| > |E
4|) phenomenon in segregation energy has been obtained. The absolute value of the segregation energy E
1 for a single impurity in the first atomic layer is much higher than that in the nether layers. Thus, whether the surface
segregation will work or not is mainly determined by E
1 which is in good relation to the differences in surface energy between the impurity and host crystals ΔQ = Q
imp − Q
hos. So we conclude that an impurity with lower surface energy will segregate to the surface of the host with higher surface
energy.
相似文献