纳米C和SiC掺杂对MgB2带材超导性能的影响

采用X射线衍射仪，扫描电镜，超导量子干涉仪等仪器对纳米C和SiC掺杂的MgB₂带材进行了表征，并采用标准四引线法对样品的临界电流进行了测试. 实验表明，C和SiC掺杂在提高MgB₂带材高场下的临界电流密度方面具有显著效果. 在温度为4.2 K、磁场大于9 T条件下，C和SiC掺杂样品的临界电流密度与未掺杂样品相比均提高一个数量级以上. 掺杂样品高磁场下良好的临界电流性能主要归因于C对B的替代所产生的晶格畸变、位错等缺陷和局部成分变化而导致的有效晶内钉扎作用. 实验结果表明，SiC掺杂的MgB2带材之所以具有非常好的高场电流特性，和C掺杂的样品一样， C对B的替代起到十分关键的作用. 关键词： 2带材')" href="#">MgB₂带材 C掺杂 SiC掺杂 临界电流性能     

The upper critical field in two-band layered superconductors

The upper critical field of clean MgB₂ is investigated using the two-band layered Ginzburg--Landau (GL) theory. The calculated results are fitted to the experimental data of clean MgB₂ crystal very well in a broad temperature range. Based on the GL theory for clean superconductors, a phenomenological theory for dirty superconductor is proposed. Selecting appropriate parameters, two-band layered GL theory is successfully applied to the crystal of Mg(B_1-xC_x)₂ and the neutron irradiation samples of MgB₂.     

MgB2混合态热导率的反常增强

测量了MgB₂多晶样品的混合态热导率，磁场强度为0—7 T，温度范围为5—45 K .实验结果显示MgB₂热导率在低场下迅速上升，高场下趋于饱和，这与MgB₂的 二能隙电子结构有关.对实验结果的分析指出，低温强场下MgB₂多晶样品热导率的显著增强无法完全 用电子热导来解释，并对此进行了讨论. 关键词： 2')" href="#">MgB₂ 热导率 混合态     

MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

The MgB₂ coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB₂/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10⁵ A/cm² at 5 K under 3 T is obtained for the MgB₂/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB₂ tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB₂/Cu tapes, the MgB₂ on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB₂ grain boundaries lead to strong improvement in J_c for the MgB₂/SiC/Cu tapes. The MgB₂/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB₂/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J_c(20 K, 0 T) ∼5.8 × 10⁶ A/cm² and J_c(20 K, 1.5 T) ∼2.4 × 10⁵ A/cm² is obtained for the 2-μm-thick MgB₂/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB₂ conductors with high T_c and J_c values which are useful for large scale applications.     

高性能MgB2长线材制备及性能表征

采用原位粉末装管工艺，分别以Mg粉(99.5%)，无定形B粉(99.9%)为原料，以纳米SiC(10—30nm)作为掺杂材料制备铁基MgB₂线.首先将已混合的原料在丙酮介质中球磨，真空干燥后，将粉末填入铁管内，然后通过孔型轧制、旋锻和拉拔等冷加工工艺得到11m长外径Ф1.75mm铁基MgB₂超导线.用扫描电镜，电子能谱，X射线衍射仪和超导量子干涉仪测试发现，样品微观结构整齐，晶粒大小均匀，内部仅含微量MgO，T_C(onset)=35.1K，ΔT_C＝5.3K.纳米SiC掺杂后，其中C造成MgB₂晶格畸变，形成有效磁通钉扎中心，C元素在MgB₂中分布均匀.标准四引线测试结果表明，11m线均分10段后，各点的J_c(4.2K,10T)均超过1.0×10⁴A/cm^{2，最高值达到1.2×104A/cm2.在10—18T范围各点临界电流值分布均匀，变化率小于10%.}     

Bulk MgB2 superconductor with high critical current density synthesized by self-propagating high-temperature synthesis method

Pure MgBMgB2 超导体 临界密度 自我传播 预热温度 超导电性SHS method, bulk MgB₂ superconductor, superconductivityProject supported by the Natural Science Foundation of Gansu province of China (Grant No ZS032-B25-019).2005-03-187/2/2005 12:00:00 AMPure MgB2 bulk samples are successfully synthesized by self-propagatlng hlgh-temperature synthesis （SHS） method. The experiments show that the best preheating temperature is 250℃, the highest Jc values of the prepared MgB2 reach 1.5×10^6A/cm^2 （10K, 0.5T） and 1.7×10^6A/cm^2 （20K, 0T）, and the MgB2 particle sizes range from 2 to 5μm. The advantages of this method are that it is simple, economical and suitable for the manufacture of bulk MgB2 materials on industrial scale.     

利用电泳法在金属基底上制备MgB2超导厚膜

利用电泳技术在高熔点金属基底Ta，Mo和W上制备MgB₂超导厚膜.厚膜中的MgB2晶粒结合紧密，粒度小于1μm，呈随机取向生长.电阻测量表明沉积在Ta，Mo，W上的MgB₂厚膜的超导起始转变温度分别为36.5K，34.8K，33.4K，对应的转变宽度为0.3K，1.5K和2.0K.三种基底上制备的MgB₂厚膜的临界电流密度在不同温度下随外磁场的变化情况 基本相同，MgB₂/Mo厚膜的临界电流密 关键词： 2超导厚膜')" href="#">MgB₂超导厚膜 电泳 金属基底     

高温超导体MgB2的电子结构研究

用第一性原理能带理论计算了高温超导体MgB₂的电子结构.计算得出的电子能带说明MgB₂是一种宽能带化合物,价带主要由Mg和B原子s和p的杂化形成.费米能级处的态密度N(E_F)是0.72(states/eV).根据这些结果,初步推断出MgB₂的超导电性的微观机制不可能是电子声子耦合的BCS模型,而是有待于探索的新机制 关键词： 高温超导体 电子结构     

熔融织构(Nd-Eu-Gd)-Ba-Cu-O超导体的各向异性磁通跳跃及其不稳定性研究

对c轴择优取向的熔融织构样品(Nd_0.33Eu_0.33Gd_0.33) Ba₂Cu₃O_7-δ（含Gd(211)相）的磁通跳跃现象进行 了系统研究.结果表明，在外加磁 场平行于样品c轴条件下，在2到3K的温度范围内明显观测到了部分磁通跳跃现象，而 在5K及以上温区并未出现.在磁场垂直于样品的c轴情况，在2K到T_c的整个温 区都没有观察到磁通跳跃现象.这种各向异性磁通跳跃现象可归因于各向异性钉扎力和几何 退磁因子的结果.随着温度的增加，磁通跳跃数目减少，且M(H)曲线的第三象限是磁通 跳跃的最不稳定过程.最后，研究了磁通跳跃对磁场扫描速率的依赖关系，并讨论了磁通蠕 动对磁通跳跃的影响. 关键词： 0.33Eu_0.33Gd_0.33)Ba₂Cu₃O_7-δ超导体')" href="#">(Nd_0.33Eu_0.33Gd_0.33)Ba₂Cu₃O_7-δ超导体 OCMG方法 磁通跳跃     

Iron doping effect on superconducting properties of MgB2

Iron-doped MgB₂ bulks are prepared by hybridized diffusion method using nano-powder and macro-powder of pure iron as iron source. The doping effect on superconductivity transition temperature, T_c, and critical current J_c have been investigated. It is found that both T_c and J_c of MgB₂ show quite different features depending on the particle size of the dopant powders. It is demonstrated that different from iron bulk or large size powders, iron nano-powders are active dopant for MgB₂ which suppresses both T_c and J_c of MgB₂.     

Higher borides and oxygen-enriched Mg–B–O inclusions as possible pinning centers in nanostructural magnesium diboride and the influence of additives on their formation

The study of high pressure (2 GPa) synthesized MgB₂-based materials allows us to conclude that higher borides (with near MgB₁₂ stoichiometry) and oxygen-enriched Mg–B–O inclusions can be pinning centers in nanostructural magnesium diboride matrix (with average grain sizes of 15–37 nm). It has been established that additions of Ti or SiC as well as manufacturing temperature can affect the size, amount and distribution of these inclusions in the material structure and thus, influence critical current density. The superconducting behavior of materials with near MgB₁₂ stoichiometry of matrix is discussed.     

Influence of shock-wave pressure up to 65 GPa on the crystal structure and superconducting properties of MgB2

The influence of shock-wave pressure treatment up to 65 GPa on the crystal structure and the superconducting transition temperature of a polycrystalline MgB₂ sample has been investigated. X-ray diffraction measurements have revealed that the shock-wave pressure does not result in any irreversible structural phase transitions in the MgB₂, except for microdistortions formed in the crystal structure of the shock-wave pressure-treated MgB₂ sample. This conclusion is in agreement with the results of superconducting transition temperature measurements of a MgB₂ sample performed before and after its shock-wave pressure treatment.     

Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

Nano-diamond and titanium concurrently doped MgB₂ nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J_c–H behavior and pinning force scaling features of MgB₂ have been investigated. Although T_c was slightly depressed, J_c of MgB₂ have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J_c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB₂, a unique nanocomposite in which TiB₂ forms a thin layer surrounding MgB₂ grains whereas nano-diamond particles were wrapped inside the MgB₂ grains. Besides, nano-diamond doping results in a high density stress field in the MgB₂ samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB₂ system.     

Effects of nano-carbon doping and sintering temperature on microstructure and properties of MgB2

We fabricated nano-carbon (NC) doped MgB₂ bulks using an in situ process in order to improve the critical current density (J_c) under a high magnetic field and evaluated the correlated effects of the doped carbon content and sintering temperature on the phase formation, microstructure and critical properties. MgB_2−xC_x bulks with x = 0 and 0.05 were fabricated by pressing the powder into pellets and sintering at 800 °C, 900 °C, or 1000 °C for 30 min.We observed that NC was an effective dopant for MgB₂ and that part of it was incorporated into the MgB₂ while the other part remained (undoped), which reduced the grain size. The actual C content was estimated to be 68–90% of the nominal content. The NC doped samples exhibited lower T_c values and better J_c(B) behavior than the undoped samples. The doped sample sintered at 900 °C showed the highest J_c value due to its high doping level, small amount of second phase, and fine grains. On the other hand, the J_c was decreased at a sintering temperature of 1000 °C as a result of the formation of MgB₄ phase.     

The superconducting properties of Cu-doped MgB2 bulks prepared by a high-energy milling method

The Cu-doped MgB₂ bulks were prepared by a high-energy milling and subsequent sintering method. Compared to the pure and Cu-doped bulks prepared only by sintering, the critical current density (J_c) of the milled Cu-doped samples was improved with a slight decrease in critical transition temperature (T_c). Using the phase analysis and microstructure observation, it has been found that the MgB₂ grains in the milled Cu-doped sample was refined with the high-energy milling and thus provided more grain boundary pinning, which was contributed to the improvement of J_c at high field.     

Effect of sorbic acid doping on flux pinning in bulk MgB2 with the percolation model

In this paper, we study the doping effect of sorbic acid (C₆H₈O₂), from 0 to 20 wt.% of the total MgB₂, on critical temperature (T_c), critical current density (J_c), irreversibility field (H_irr) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J_c(B) in the framework of percolation theory and it is found that the J_c(B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J_c is due to the reduction of anisotropy in high field region.     

Non-resonant microwave absorption studies of superconducting MgB2 and MgB2 + MgO

Non-resonant microwave absorption (NRMA) studies of superconducting MgB₂ and a sample containing ∼10% by weight of MgO in MgB₂ are reported. The NRMA results indicate near absence of intergranular weak links in the pure MgB₂ sample. A linear temperature dependence of the lower critical field H _c1 is observed indicating a non-s wave superconductivity. However, the phase reversal of the NRMA signal which could suggest d wave symmetry is also not observed. In the MgB₂ + MgO sample, much larger low field dependent absorption is observed indicating the presence of intergranular weak links. The hysteretic behavior of NRMA is compared and contrasted in the two samples. In the pure MgB₂ sample, a large hysteresis is observed between the forward and the reverse scans of the magnetic field indicating strong pinning of flux lines. This hysteresis saturates a few degrees below T _c while in the MgB₂ + MgO sample, a much slower increase of hysteresis with decreasing temperature is observed, a signature of weaker pinning.     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

超导材料NbS2上临界磁场的理论分析

根据两带Ginzburg-Landau 理论计算了层状超导材料NbS₂的上临界磁场, 以及上临界磁场各向异性参数随温度的变化情况, 并将NbS₂与MgB₂, NbSe₂上临界磁场的各向异性进行比较. 所得计算结果与已有实验数据符合得很好, 充分说明了NbS₂的超导电性具有两能隙特征. NbS₂上临界磁场各向异性参数在5.0 K附近逐渐变小, 这与MgB₂和NbSe₂有相似之处. 但NbS₂的上临界磁场各向异性参数大约为7.3, 明显大于MgB₂和NbSe₂. 计算结果还表明, NbS₂较大能隙所对应能带的有效质量比约为54, 另一能带的有效质量基本为各向同性.     

The effect of SiC nanoparticle addition on the flux pinning properties of MgB2

The nanoparticle–MgB₂ composite superconducting sample, (SiC)_4wt.%(MgB₂)_96wt.% ((SiC)₄–MgB₂), was prepared, and the effect of nanoparticle additions on the magnetic flux pinning was investigated. The measurement and comparison of isothermal magnetization M(H), for pure-MgB₂ powder and sintered pellets of (SiC)₄–MgB₂ and pure-MgB₂ were carried out at temperatures between 5 and 50 K in fields up to 8.5 T. The magnetic irreversibility ΔM(H) curves of the (SiC)₄–MgB₂ follow almost identical lines of both pure-MgB₂ powder and sintered bulk MgB₂ in the region above a specific magnetic field (called a merged field), which gradually decreases as the temperature increases. The (SiC)₄–MgB₂ composite superconductor has exhibited the flux pinning effect which comes from both the grain boundaries and the point defect weak pinning centers in the region below the merged field line. This is different from the case of pure-MgB₂ powder and sintered bulk MgB₂ which showed mostly the grain boundaries pinning.