Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure

The green light emitting diodes(LEDs)have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum.In this research,a novel quantum well structure was designed to improve the electroluminescence(EL)of green InGaN-based LEDs.Compared with the conventional quantum well structure,the novel structure LED gained 2.14times light out power(LOP)at 20-mA current injection,narrower FWHM and lower blue-shift at different current injection conditions.     

MOCVD生长InGaN/GaN MQW紫光LED

利用LP－MOCVD系统生长了InGaN/GaN MQW紫光LED外延片，双晶X射线衍射测试获得了2级卫星峰，室温光致发光谱的峰值波长为399.5nm，FWHM为15.5nm，波长均匀性良好。制成的LED管芯，正向电流20mA时，工作电压在4V以下。     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V 的GaN基绿光高压发光二极管（LED）,并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明：电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。     

Progress in research of GaN-based LEDs fabricated on SiC substrate

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated.It is found that the Al GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with Al N buffer layer.To increase the light extraction efficiency of GaN-based LEDs on Si C substrate,flip-chip structure and thin film flip-chip structure were designed and optimized.The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 m A.At 350 m A,the output power,the Vf,the dominant wavelength,and the wall-plug efficiency of the blue LED were 644 m W,2.95 V,460 nm,and 63%,respectively.     

基于不同衬底材料高出光效率LED芯片研究进展

提高LED芯片的出光效率是解决LED光源大功率化和可靠性的根本。根据LED芯片所用衬底材料的不同,总结了近年来提高GaN基LED出光效率的研究进展,介绍了新的设计思路、工艺结构与制备方法。并从材料结构和衬底选取方面,对LED芯片未来的发展趋势进行了展望。     

Characteristics of deep ultraviolet AlGaN-based light emitting diodes with p-hBN layer

The AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with p-hBN layer are investigated numerically. In comparison with the conventional AlGaN DUV LEDs, the proposed LED can significantly improve the carrier injection, radiative efficiency, as well as the electroluminescence (EL) intensity under the same applied forward bias. Simultaneously, the light extraction efficiency in the LED using p-hBN instead of p-AlGaN exhibits a more than 250% increase at the applied voltage of 7.5 V due to the smaller loss of reflection and absorption of the emitted light.     

结温与热阻制约大功率LED发展

LED结温高低直接影响到LED出光效率、器件寿命、可靠性、发射波长等。保持LED结温往允许的范围内,是大功率LED芯片制备、器件封装和器件应用等每个环节都必须重点研究的关键因素,尤其是LED器件封装和器件应用设计必须着重解决的核心问题。首先介绍pn结结温对LED器什性能的影响,接着分析大功率LED结温与器件热阻的关系．基于对器件热阻的分析,得出了结温与热阻已经制约大功率LED进一步向更大功率发展的结论,并提出了如下两个观点：1．要在保持低成本和自然散热方式下提高LED器件的功率,根本的出路是提高光转换效率;2．在日前没有提高光转换效率的情况下,发展超过5W的大功率器件对工程应肘没有实质意义。     

A new structure of multi-layer phosphor package of white LED with high efficiency

<正>The applications of white light-emitting diodes(LEDs) have become more and more wide recently,while the low light-extraction efficiency of white LED limits its development.In this letter,a new structure of multilayer phosphor package of white LED is proposed to improve the light-extraction efficiency.It is illustrated that the thickness of phosphor layer plays an important role in improving the light-extraction efficiency of LED.The light-extraction efficiency of LED is improved by double-layer or multi-layer phosphor package structures.     

A polarization mismatched p-GaN/p-Al0.25Ga0.75N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa

A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes (μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency (EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al$_{0.25}$Ga$_{0.75}$N/p-GaN structure for 445 nm GaN-based μLEDs with the size of $40 \times 40 $μm$^{2}$, which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al$_{0.25}$Ga$_{0.75}$N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al$_{0.25}$Ga$_{0.75}$N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.     

利用温变电容特性测量发光二极管结温的研究

结区的温度, 简称结温, 是发光二极管(LED) 的重要参数之一, 它对LED 器件的出光效率、光色、器件可靠性和寿命均有很大影响, 准确测量LED 器件的结温对制备LED 芯片、器件封装和应用有着重要的意义. 本文利用反向偏压下的LED的势垒电容随温度变化的特性, 提出了一种LED结温测量的新方法. 论文首先测量和分析了LED在室温下反向偏压时的电容-电压(C-V)曲线和不同反向偏压下的电容-温度(C-T)曲线, 结果表明, 在合适的偏压下, LED的电容随温度的增大而显著增加, 并呈现良好的线性关系. 在LED工作中监测其电容的变化, 并与C-T曲线进行对比, 实现了LED结温的测量, 其测量结果和传统的正向电压法的结果相对比, 两者符合较好. 最后, 利用上述方法测量了LED 在恒流和恒压条件下的结温的实时变化过程. 较传统的结温测量方法, 本方法的优点在于只须要一次定标测量, 且可实现LED在任意电压和电流下的结温测量.     

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

The relationship between the photometric, electric, and thermal parameters of light-emitting diodes(LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide(InGaAlP)-based thin-film surface-mounted device(SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum(Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster(thermal transient tester) and TeraL ED(thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.     

AlGaInP大功率发光二极管发光效率与结温的关系

目前,AlGaInP大功率发光二极管(LED)存在的主要问题是大电流工作时发热严重,主要是由于电流扩展不均匀、出光面电极对光子的阻挡和吸收以及器件材料与空气折射率之间的差距引起的全反射现象,这些因素造成大功率LED出光受到限制、发光效率低、亮度不高.提出了一种复合电流扩展层和复合分布式布拉格反射层(DBR)的新型结构LED,使得注入电流在有源区充分地扩散,同时提高了常规单DBR对光子的反射率.结果显示,这种新型结构LED比常规结构LED的性能得到了很大的提升,350 mA注入电流下两者的输出光功率分别为4 关键词： 复合电流扩展层 复合分布式布拉格反射层 出光效率 结温     

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

The performance of InGaN blue light-emitting diodes(LEDs) with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer(EBL) has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.     

一种大功率LED散热系统模糊控制器设计

基于当前的COB封装LED芯片,分析了芯片的热阻模型,推导出发光结在理想温度下工作时的基板温度。针对大功率LED存在的散热问题,基于课题组双进双出射流冲击水冷散热系统,设计了一种模糊控制器,选取温度变化和温度变化率为控制输入量,并对各控制输入量的范围设定进行了说明。根据设计的控制器进行程序编写,下载到控制芯片中进行实际验证,在20℃环境温度下,芯片基板温度最终维持在35.5~36.5℃之间,保证了灯具正常、稳定工作,为大功率LED散热系统提供了一种控制器设计方案,具有一定的实际意义。     

GaN基LED电流扩展的有限元模型及电极结构优化

针对目前蓝宝石衬底上外延生长制备的GaN基半导体发光二极管(LED)器件存在电流分布不均匀的问题,建立了LED的电流扩展模型,提出了定量评价其特性的参数和标准。通过用有限元方法计算LED中电流的三维空间分布,对不同的电极结构进行了定量的比较,给出了优化的电极结构。计算结果显示,在相同工艺参数下,采用插指型电极结构的LED与采用传统型电极结构和扩展正极型电极结构的LED相比,电流扩展更均匀,串联电阻更小。在此基础上,对插指型电极结构作了进一步的参数优化,得出了使LED的串联电阻取最小值时的插指型电极的结构参数。根据优化得到的参数制作了相应的LED样品,并与采用扩展正极型电极结构的LED做了对比实验。实验结果表明,计算得出的结果与实验结果符合得很好。采用了优化后的插指型电极结构的LED与采用扩展正极型电极结构的LED相比,前者的串联电阻仅为后者的44.4%。     

New collection systems for multi LED light engines

Light emitting diodes (LEDs) have numerous advantages as light sources in projectors. LEDs are more compact, exhibit a larger color gamut, have a longer lifetime, and need a lower supply voltage. However, there is still one important disadvantage: the optical power per unit of étendue (luminance) of an LED is significantly low. As a result of the étendue limitations of LEDs, the projected flux on the screen will not be high. Despite this shortcoming, LED’s are still of great interest for low power applications because of their other superior properties. Thus we collect the available light flux optimally and combine multiple high luminance LEDs within the system. In this study we discuss three collection systems designed to collect the LED flux with high optical efficiency while retaining small device size. The best collection efficiency attained with our collection systems is 96%. The fabrication tolerance and cost of our collection systems are also analyzed.     

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

The scalability of the tunnel-regenerated multi-active-region （TRMAR） structure has been investigated for the application in light-emitting diodes （LEDs）. The use of the TRMAR structure was proved theoretically to have unique advantages over conventional slngle-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.     

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

The scalability of the tunnel-regenerated multi-active-region (TRMAR) structure has been investigated for the application in light-emitting diodes (LEDs). The use of the TRMAR structure was proved theoretically to have unique advantages over conventional single-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.     

Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier

In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In_0.1Ga_0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al_0.2Ga_0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs.     

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.