Impurity photovoltaic effect in silicon solar cells doped with two impurities

In this work, a numerical study has been carried out to investigate the impurity photovoltaic (IPV) effect for silicon solar cells doped with two impurities (indium and thallium). It is found that the conversion efficiency \(\eta \) of the IPV solar cell doped with two impurities can improve by 2.21 % absolute, which is greater than that of the IPV solar cell doped with indium ( \(\Delta \eta =1.63\,\%\) ), but less than that of the one doped with thallium ( \(\Delta \eta =2.69\,\%\) ). It is concluded that introducing two IPV impurities may not be a good selection for implementing the IPV effect since one impurity with poorer IPV effect can absorb some sub-bandgap photons while contributing fewer currents. The location of impurity energy level is critical to the IPV cell performance. For an acceptor-type IPV impurity, the optimized location of the IPV impurity energy level locates at 0.20–0.26 eV above the valence band edge. Our results may help to make better use of the IPV effect for improving solar cell efficiency.     

Photoemission cross section:A critical parameter in the impurity photovoltaic effect

A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic(IPV) effect for silicon solar cells doped with indium. The photovoltaic parameters(short-circuit current density, opencircuit voltage, and conversion efficiency) of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10-20cm~2, the conversion efficiencyη of the IPV cell always has a negative gain(?η 0) if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small(large) hole photoemission cross section and large(small) electron photoemission cross section,whose energy levels are near the valence(or conduction) band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.     

Simulation of IPV effect in In-doped c-Si with optimized indium concentration and layer thickness

Impurity photovoltaic effect(IPV) is one of the attempts to improve efficiency of solar cells and is the idea of exploiting three step generation via impurity states within the band gap to utilize sub-band gap photons. The three transitions are of electrons from valence band (VB) to conduction band (CB), valence band to impurity level and impurity level to conduction band. In the present simulation, we have used the p⁺nn⁺ structure in order to achieve higher photogenerated current and efficiency without loosing the open circuit voltage. Compared to other group-III elements in silicon solar cell, Indium is the most suitable material to achieve higher benefit in IPV. In this simulation, the model of IPV is considered to achieve the maximum benefit from the impurity state in a solar cell. To simulate we have used the one dimensional simulation program, SCAPS-1D. Again light trapping is an important part of IPV solar cell that has been considered in this simulation. Using IPV we have numerically demonstrated, an increase in efficiency, by 2.79% over that without-IPV effect and a 3.23% increase over the efficiency, 30.9% as reported by Schmeits and Mani [1].     

Impurity photovoltaic effect in silicon solar cell doped with sulphur: A numerical simulation

The impurity photovoltaic effect (IPV) has mostly been studied in various semiconductors such as silicon, silicon carbide and GaAs in order to increase infrared absorption and hence cell efficiency. In this work, sulphur is used as the IPV effect impurity incorporated in silicon solar cells. For our simulation we use the numerical device simulator (SCAPS). We calculate the solar cell performances (short circuit current density J_sc, open circuit voltage V_oc, conversion efficiency η and quantum efficiency QE). We study the influence of light trapping and certain impurity parameters like impurity concentration and position in the gap on the solar cell performances. Simulation results for IPV effect on silicon doped with sulphur show an improvement of the short circuit current and the efficiency for sulphur energy levels located far from the middle of the band gap especially at E_c-E_t=0.18 eV.     

Millimetric response of stressed gallium doped germanium photoconductor

Conclusion Conventional Ge:Ga photoconductors presents a residual responsivity at millimetric wavelengths, well below the cut-off wavelength due to the gallium impurity ionization energy. At constant bias voltage, this millimetric responsivity is greatly enhanced when a strong uniaxial stress is applied. We suggest that this response is mainly due to a change in the free hole lifetime when the hole gas is heated by the absorbed microwave photons. This photoconductive process has a shorter response time than the InSb Putley mechanism. Thus optimization of this millimetric Ge:Ga detector could find an application for example for heterodyne detection with larger spectral width than InSb.     

半导体光电探测器响应度测试装置的研制

分析了半导体光电探测器光谱响应度的测试原理;研制了一套波长为０．４～１．１μｍ的光谱响度测试装置。该装置采用双光路替代法,可以测试绝对光谱响应度、相对光谱响应度和量子效率,并可减小光源不稳定性对测试结果的影响,最终给出了测试结果比对。     

阻挡杂质带红外探测器中的界面势垒效应

通过变温暗电流和变偏压光电流谱实验对阻挡杂质带红外探测器的跃迁机理和输运特性进行了研究. 结合器件能带结构计算的结果, 证明了在阻挡杂质带红外探测器中主要由导带底下移效应引起的界面势垒的存在. 提出了阻挡杂质带红外探测器的双激发工作模型, 并从变偏压光电流谱中成功地分离出了与这两种物理过程所对应的光谱峰, 进一步证实了器件的能带结构. 研究了界面势垒效应对阻挡杂质带红外探测器的光电流谱、响应率和内量子效率的影响. 研究表明, 考虑进界面势垒效应, 计算得到的器件响应率与实验值符合得很好. 同时发现阻挡杂质带红外探测器中内建电场的存在等效降低了发生碰撞电离增益所需的临界电场强度.     

中红外高能激光探测单元

基于光电导探测原理,分析了影响室温光导型InSb探测器在中红外激光功率参数测量中的因素,得到了材料掺杂数密度、环境温度对探测器暗电阻、光谱响应率和光谱探测率的影响规律;开展了探测器在强激光辐照下的热效应理论模拟和实验研究,模拟分析了探测器在激光辐照下的动态响应特性。结果表明:针对测量系统中所使用的探测器,在激光功率密度小于4 W/cm2时,激光热效应对测量结果的影响可忽略;研制了相应的恒流源驱动电路,实现了中红外高能激光功率参数的探测。     

基于杂质光伏效应的镍掺杂对砷化镓太阳电池性能的影响

利用杂质光伏效应能够使太阳电池充分利用那些能量小于禁带宽度的太阳光子,从而提高电池的转换效率.为了更好地利用杂质光伏效应提高砷化镓太阳电池的转换效率,本文利用数值方法研究在砷化镓太阳电池中掺入镍杂质以形成杂质光伏太阳电池,分析掺镍对电池的短路电流密度、开路电压以及转换效率的影响;同时,探讨电池的陷光结构对杂质光伏太阳电池器件性能的影响.结果表明:利用杂质光伏效应掺入镍杂质能够增加子带光子的吸收,使得电池转换效率提高3.32%;转换效率的提高在于杂质光伏效应使电池的红外光谱响应得到扩展;另外,拥有良好的陷光结构是取得好的杂质光伏效应的关键.由此得出:在砷化镓太阳电池中掺镍形成杂质光伏太阳电池是一种能够提高砷化镓太阳电池转换效率的新方法.     

红外探测器光谱响应度测试技术研究

光谱响应度是探测器的重要技术参数之一，随着红外探测技术的发展，精确测量红外探测器的光谱响应度变得越来越重要。首先对红外探测器光谱响应度的测试技术进行分析，然后建立红外探测器相对光谱响应度测量装置，并用腔体热释电探测器在该装置上进行红外探测器光谱响应度校准实验。通过对红外探测器相对光谱响应度进行重复测量，给出测量结果的平均值，最后对影响测量结果的不确定度进行分析。由于该装置的测量范围是1～20μm，因此还可以实现InSb探测器和HgCdTe探测器相对光谱响应度的测量。不确定度分析结果表明，InGaAs探测器光谱响应度的测量精度较高。     

Structural damage detection using cross correlation functions of vibration response

Structural damage detection methods based on vibration responses are appealing for a variety of reasons such as their potential to observe damage from sensors placed remote from an unknown damage site. Of particular interest to the authors is online damage detection in which changes in the structure can be flagged up in an automated fashion by permanently installed transducers. In a previous paper by the authors, the inner product vector (IPV) was proposed as a damage detection algorithm which uses cross correlation functions between response measurements. Implicitly assumed in the formulation is that the response quantity is that of displacement resulting from white noise excitation. In this paper, the IPV technique is first reviewed and then generalised to address velocity and acceleration response to band pass white noise excitation. It is shown that the IPV is a weighted summation of the mode shapes, and the effect of some particular measurement noise on the IPV can be adaptively eliminated in the calculation of IPV. Then, the damage detection method based on changes in the IPV is proposed. Finally, damage detection experiments of shear frame structure, honeycomb sandwich composite beam and aircraft stiffened panel are presented to illustrate the feasibility and effectiveness of the proposed method.     

脉冲激光辐照p型硅单晶向n型转化

本文研究了p型硅单晶用红宝石脉冲激光辐照之后向n型转化的效应。这个效应与补偿杂质有关。实验结果表明:脉冲激光辐照之后补偿杂质浓度增加,补偿杂质磷分布发生变化,杂质补偿度大于7％的样品在被激光辐照的区域较容易转变为n型导电。这个效应与硅单晶中氧含量、晶面和晶体生长方式无关。 关键词：     

地物光谱仪测量中的温湿度影响

地物光谱仪在遥感领域的应用日益重要,可用于研究不同地物条件下可见和红外的光谱辐射特性,从而获得地表的光谱辐射亮度、光谱辐射照度或方向反射因子等信息。地物光谱特性的准确测量是光学遥感定量分析的基础,对于航天传感器定标、遥感数据反演等具有极其重要的意义。地物光谱仪在测量前必须进行光谱辐射定标,一方面定标过程中地物光谱仪的光谱响应特性可能发生漂移,另一方面测量时的环境与定标环境可能差异较大,都会影响测量的准确性。在恒温恒湿条件下,实验采用谱线灯光源和积分球光源考察了地物光谱仪波长和光谱响应度随探测器温度的变化。数据显示当光谱仪内部硅阵列探测器温度上升时,波长位置并未发生改变;而光谱仪的光谱响应度随着温度上升明显增大。当硅探测器温度从28.3 ℃升至35.2 ℃时,光谱仪在380～990 nm的光谱响应度变化达到1.8%～7.3%;同时近红外1 000～1 800 nm的平均变化约3.0%,2 000～2 500 nm的变化约1.9%。当改变环境温度和湿度时,测量数据表明湿度影响主要在大气中水分子的吸收峰附近波长,对其他波长影响很小;光谱仪光谱响应度与内部探测器的温度近似存在一一对应关系,环境温度的影响可以近似根据内部探测器温度变化予以表征。理论上当环境条件改变时,根据光谱响应度随温度的变化和探测器的监测温度,可以进行光谱数据修正。最后,实验测量了一组探测器温度下对应的光谱响应度,采用多项式拟合和最小二乘法建立了地物光谱仪光谱响应度与温度的函数关系。根据函数关系插值得到的光谱响应度修正因子和直接测量得到的数据基本一致,全谱段的差异几乎都小于0.2%,表明光谱响应度与温度的对应关系可用于解决不同环境条件下的测量准确性。     

In-plane photovoltage measurements on MBE grown InN

Temperature dependent measurements of the in-plane photovoltage (IPV) arising from Fermi level fluctuations constitute a powerful tool for determining surface and bulk states and trap activation energies in nominally undoped semiconductors. In this work we report the first IPV measurements on high quality InN grown using the MBE technique. The temperature dependent IPV results coupled with Hall mobility and carrier density measurements provide ample evidence for the existence of a high density of states within the range 54 to 68 meV below the conduction band. Temperature dependent PL measurements indicate a band gap of 0.77 eV where a very weak temperature dependence is observed between 77 and 300 K. These results are shown to be in accord with the IPV measurements.     

Effect of H impurity on misfit dislocation in Ni-based single-crystal superalloy: molecular dynamic simulations

The effect of H impurity on the misfit dislocation in Ni-based single-crystal superalloy is investigated using the molecular dynamic simulation. It includes the site preferences of H impurity in single crystals Ni and Ni₃Al, the interaction between H impurity and the misfit dislocation and the effect of H impurity on the moving misfit dislocation. The calculated energies and simulation results show that the misfit dislocation attracts H impurity which is located at the γ/γ' interface and Ni₃Al and H impurity on the glide plane can obstruct the glide of misfit dislocation, which is beneficial to improving the mechanical properties of Ni based superalloys.     

Parametrically Driven Solitons in a Chain of Nonlinear Coupled Pendula with an Impurity

The system consisting of a chain of parametrically driven and damped nonlinear coupled pendula with a mass impurity is studied by means of a discrete version of the envelope function approach. An analogue of the parametrically driven damped nonlinear Schodinger equation with an impurity term is derived from the original lattice equation. Analytical solutions of impurity pinned high-frequency breathers and kinks are obtained. The results show that the mass impurity has striking influence on the high-frequency modes. In addition, we perform numerical simulations, showing that the light mass impurity has a stabilizing effect on the chain. The breathers seeding chaos in the homogeneous chain are pinned on a suitable light impurity to pull the chain from the chaotic state.     

红外光谱发射率测量系统的温漂修正方法

针对探测器光谱响应度温漂现象对红外光谱发射率测量系统重复性的影响,分析探测器温度与输出电压之间的变化规律,提出了基于多项式拟合的光谱响应度温漂修正方法。研究探测器自身温度与其光谱响应度的函数关系,对探测器光谱响应度随温度变化的曲线进行数据拟合,得到探测器温度-光谱响应度的拟合方程,计算光谱响应度的温漂修正系数,修正探测器的输出电压,消除光谱响应度温漂现象对探测器输出电压造成的影响。研制光谱响应度温漂修正装置,测得探测器光谱响度的温漂曲线,对比指数拟合曲线和多项式拟合曲线与测量曲线的吻合度,结果表明6阶多项式拟合曲线的一致性较好,提高了基于积分球反射计的光谱发射率测量系统的重复性。     

The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300K to 900K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.     

Effect of Zn impurity in K0.8Fe(2-δ-x)Zn(x)Se2

A series of K(0.8)Fe(2-δ-x)Zn(x)Se(2) single-crystal samples with nominal compositions 0?≤?x?≤?0.05 were grown and their physical properties were measured in order to study the effect of Zn impurity. It is found that the Zn impurity (x?≤?0.02) does not affect the superconducting transition temperature T(c) significantly. Meanwhile the hump in resistivity which corresponds to the transition from the insulating to metallic phase quickly shifts towards low temperatures. The results imply that there should be a phase separation in this system and Zn impurity causes the enhancement of the insulating phase. The negligible effect of Zn impurity on T(c) suggests an s-wave pairing in the superconducting phase. Meanwhile there is a possibility that the Zn impurity may selectively enter into the insulting phase.     

纤锌矿GaN/AlxGa1-xN应变柱形量子点中杂质态结合能及其压力效应

考虑应变及流体静压力,在有效质量近似下,利用变分法计算了无限高GaN/Al<,x>Ga<,1-x>N应变柱形量子点中类氢杂质结合能.结果表明,在量子点尺寸较小情况下,应变增加了杂质态结合能;而在量子点尺寸较大情况下,应变降低了杂质态结合能.随着Al摩尔分数的增加,杂质态结合能减小.杂质态结合能随着流体静压力的增加而增大...