脉冲激光辐照p型硅单晶向n型转化

本文研究了p型硅单晶用红宝石脉冲激光辐照之后向n型转化的效应。这个效应与补偿杂质有关。实验结果表明:脉冲激光辐照之后补偿杂质浓度增加,补偿杂质磷分布发生变化,杂质补偿度大于7％的样品在被激光辐照的区域较容易转变为n型导电。这个效应与硅单晶中氧含量、晶面和晶体生长方式无关。 关键词：

INVERSION OF p-TYPE SILICON TO n-TYPE BY PULSED LASER IRRADIATION

This paper describes an effect of the inversion of silicon single crystal from p-type to n-type by the irradiation of ruby pulsed laser. This effect is a function of the impurity compensation but independent of the oxygen content, the crystal cut and the crystal-growing process. Experimental results show that p-type silicon crystals with phosphorus impurity compensation higher than 7% are susceptible to inversion by pulsed laser irradiation when the amount of impurity compensation increases and the distribution of impurity compensation changes. The concentration profile of phosphorus atoms is given by SIMA technique.