激光辐照下PV型HgCdTe探测器反常响应机理

 利用PV型探测器开路电压的表达式,并考虑探测器的温度变化建立模型,对激光辐照下PV型HgCdTe探测器开路电压的变化进行了理论计算。当激光较弱时,计算结果与实验结果符合得很好。当激光较强时,对于辐照过程当中探测器输出变化的一般性趋势以及激光完全停照后的热弛豫过程,该模型也能给出较好的解释;但对于激光开始辐照时输出下跳和激光停止辐照时输出上跳的反常现象,该模型不能给出合理的解释。分析认为,该模型较好地描述了晶格温升对探测器输出的影响,但是它没有考虑热载流子效应;当激光较强时,热载流子效应不可忽略,特别是激光开始辐照和激光停止辐照时,载流子与晶格的温度差有比较明显的快速变化,从而导致了探测器的反常响应。     

532nm皮秒脉冲激光对单晶硅的损伤特性研究

随着光电对抗和超短脉冲激光技术的发展,研究超短脉冲激光与单晶硅相互作用具有非常重要的理论和实际意义.为了进一步明确532 nm皮秒脉冲激光对单晶硅的损伤机理,本文开展了532 nm皮秒脉冲激光辐照单晶硅的损伤效应实验研究,测定了损伤阈值,明确了损伤机理,探讨了低通量下的脉冲累积效应.首先,利用波长为532 nm、脉冲宽...     

双光束组合激光辐照光导型CdS光电探测器的实验研究

为研究波段内和波段外组合激光对光导型光电探测器的辐照效应,实验采用532nm(波段内)和1319nm(波段外)双光束组合连续激光辐照光导型CdS光电探测器,分别改变两束激光的辐照功率,得到探测器的电压响应曲线。实验结果表明,光电探测器对波段内和波段外激光都有响应,但在激光开始和停止辐照瞬间探测器对两束激光的响应电压刚好相反。探测器对波段外激光的电压响应随线性工作区间内的波段内激光功率升高而增大;随着波段内激光趋于饱和,对波段外激光的响应电压近似指数级下降。分析认为,光电探测器对波段外激光的响应为光激发热载流子效应,是由自由载流子吸收激光能量产生带内跃迁引起的;波段内激光辐照影响探测器对波段外激光的吸收系数。     

飞秒激光脉冲与金属光阴极相互作用

本文从理论上分析了飞秒激光与光阴极相互作用过程，采用双温模型分析了飞秒激光脉冲辐照下金属薄膜的温度效应。通过建立一个简单的光电效应模型，获得了最佳的金属光阴极厚度，通过该模型可以发现，产生的光电流对在飞秒激光脉冲辐照下的电子温度和晶格温度有着很大的依赖关系。     

重复脉冲激光辐照光学材料的热力效应

在建立高斯型重复脉冲激光辐照光学材料模型的基础上,得到了圆柱型光学材料的二维温度场和热应力的解析解.以K9玻璃为例,通过数值计算得到同条件下重复脉冲激光对光学材料的损伤阈值.研究表明：在高斯型重复脉冲激光辐照下,损伤阈值受到脉冲数目、宽度、重复频率以及脉冲激光光斑半径的影响,多数情况下K9玻璃会发生热应力损伤.     

激光辐照下薄膜镜面波纹损伤机理研究

 用透镜将脉冲激光束聚焦在铝膜镜面上，在部分样品的激光损伤边缘区，出现波纹状损伤形貌。大多数情况下，有多套波纹同时存在，在镜面形成花纹，或者其中有一两套波纹占优势。提出了脉冲激光辐照下光学元件损伤区边缘产生波纹的一种光干涉模型：认为样品表面本身存在微米级杂质颗粒或者表面缺陷点在激光辐照下首先产生鼓包变形，鼓包或杂质颗粒将激光反射（散射）在未发生变形的区域，与直接辐照在该区域的激光束产生干涉，使得变形区周围的光强呈周期性分布，当变形区进一步损伤后，则在损伤区周围留下了波纹状图案。模拟实验验证了这种设想。     

飞秒脉冲激光作用下金属薄膜的热弹性研究

利用双曲-双温两步热传导和热电子崩力模型,考虑到晶格温度与应变速率的耦合效应,得到了用于描述飞秒激光作用下金属薄膜热力效应的超快热弹性模型。以飞秒脉冲激光辐照金属铜薄膜为例,运用具有人工粘性和自适应步长的有限差分算法,对不同能量密度和脉冲宽度条件下薄膜体内温度场和应力场的变化规律进行了数值模拟,对比分析了电子晶格耦合系数对超快加热过程的影响。结果表明,飞秒脉冲激光辐照早期为明显的非平衡加热过程,电子温度迅速升高,而晶格温度的升高却相对较慢;激光辐照早期的热力耦合效应导致薄膜前表面附近的热应力表现为压应力,随着时间的推移,热应力由压应力转变为张应力,为激光加工和激光对抗提供了理论参考。     

纳秒脉冲激光沉积薄膜过程中的烧蚀特性研究

研究了高能短脉冲激光薄膜制备的整个烧蚀过程.首先建立了基于超热理论的烧蚀模型，然 后利用较为符合实际的高斯分布表示脉冲激光输入能量密度，给出了考虑蒸发效应不同阶段 的烧蚀状态方程.结合适当的边界条件，以Si靶材为例，利用有限差分法得到了靶材在各个 阶段温度随时间和烧蚀深度的演化分布规律及表面蒸发速度与烧蚀深度在不同激光辐照强度 下随时间的演化规律.结果表明，在脉冲激光辐照阶段，靶材表面的蒸发效应使得靶材表面 温度上升显著放缓；在激光辐照强度接近相爆炸能量阈值时，蒸发速度与蒸发厚度的变化由 于逆流现象将显著放缓.还得到了考虑了熔融弛豫时间及蒸发效应的固-液界面随时间的演化 方程，这一结论较先前工作更具有普适性. 关键词： 脉冲激光烧蚀 热流方程 温度演化 有限差分法     

化学增透膜激光疲劳损伤效应

疲劳效应是诱导高功率固体激光装置中光学元件激光损伤的因素之一,目前对SiO₂化学增透膜激光诱导疲劳损伤的研究鲜见报道。基于此,本文采用单一激光能量多发次辐照和多梯度激光能量多发次辐照两种不同的激光辐照方式,研究1064 nm化学增透膜层的激光疲劳损伤效应及特征。研究结果表明,在单一激光能量多发次脉冲激光辐照下,膜层最易发生疲劳损伤; 采用多梯度激光能量多发次辐照的方式,可以有效地提升膜层的损伤阈值,进而提升膜层的抗激光疲劳损伤性能。     

波段外10.6 μm激光辐照下光导型HgCdTe探测器的电学响应

 利用描述半导体内热载流子效应的１维能量平衡模型,对波段外10.6 μm激光辐照下光导型HgCdTe探测器的电学响应进行了数值模拟。结果表明：在激光开始辐照和停止辐照瞬间,探测器电阻的快速变化是由载流子温度的迅速变化引起的;在激光辐照过程中以及激光停照后,探测器电阻的缓慢变化是由晶格温度的缓慢变化进而导致载流子温度发生缓慢变化所致。模拟结果与对实验曲线的定性分析得出的结论一致。     

Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi_2Sr_2Co_2O_y/Si heterojunction

A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.     

Hyperdoping of silicon with deep-level impurities by pulsed YAG laser melting

Hyperdoping with deep-level impurity is a promising method to prepare intermediate band semiconductors. We prepared silicon hyperdoped with deep-level impurities, sulfur and titanium, by ion implantation followed by pulsed YAG laser melting. The processes of sulfur and titanium hyperdoping are comparatively studied. The amorphous sulfur and titanium ion-implanted layers changed to monocrystal by following pulsed laser melting. The depth profile of sulfur impurity after pulsed laser melting is similar to that of ion-implanted sample, while large segregation is observed for titanium hyperdoping. The crystallinity and degree of segregation depend on the laser shot number and initially implanted titanium dose. There is a trade-off between crystallinity and depth profile of impurity for titanium hyperdoping. From a viewpoint material processing, formation of high-quality silicon monocrystal hyperdoped with sulfur is easier than that with titanium. Correlation between the mid-infrared optical absorption and photoconductivity is also discussed for sulfur-hyperdoped sample.     

Partial crystallization of silicon by high intensity laser irradiation

Commercial single crystal silicon wafers and amorphous silicon films piled on single crystal silicon wafers were irradiated with a femtosecond pulsed laser and a nanosecond pulsed laser at irradiation intensities between 10¹⁷ W/cm² and 10⁹ W/cm². In the single crystal silicon substrate, the irradiated area was changed to polycrystalline silicon and the piled silicon around the irradiated area has spindly column structures constructed of polycrystalline and amorphous silicon. In particular, in the case of the higher irradiation intensity of 10¹⁶ W/cm², the irradiated area was oriented to the same crystal direction as the substrate. In the case of the lower irradiation intensity of 10⁸ W/cm², only amorphous silicon was observed around the irradiated area, even when the target was single crystal silicon. In contrast, only amorphous silicon particles were found to be piled on the amorphous silicon film, irrespective of the intensity and pulse duration.Three-dimensional thermal diffusion equation for the piled particles on the substrate was solved by using the finite difference methods. The results of our heat-flow simulation of the piled particles almost agree with the experimental results.     

Nanosecond pulsed laser ablation of silicon in liquids

Laser fluence and laser shot number are important parameters for pulse laser based micromachining of silicon in liquids. This paper presents laser-induced ablation of silicon in liquids of the dimethyl sulfoxide (DMSO) and the water at different applied laser fluence levels and laser shot numbers. The experimental results are conducted using 15 ns pulsed laser irradiation at 532 nm. The silicon surface morphology of the irradiated spots has an appearance as one can see in porous formation. The surface morphology exhibits a large number of cavities which indicates as bubble nucleation sites. The observed surface morphology shows that the explosive melt expulsion could be a dominant process for the laser ablation of silicon in liquids using nanosecond pulsed laser irradiation at 532 nm. Silicon surface’s ablated diameter growth was measured at different applied laser fluences and shot numbers in both liquid interfaces. A theoretical analysis suggested investigating silicon surface etching in liquid by intense multiple nanosecond laser pulses. It has been assumed that the nanosecond pulsed laser-induced silicon surface modification is due to the process of explosive melt expulsion under the action of the confined plasma-induced pressure or shock wave trapped between the silicon target and the overlying liquid. This analysis allows us to determine the effective lateral interaction zone of ablated solid target related to nanosecond pulsed laser illumination. The theoretical analysis is found in excellent agreement with the experimental measurements of silicon ablated diameter growth in the DMSO and the water interfaces. Multiple-shot laser ablation threshold of silicon is determined. Pulsed energy accumulation model is used to obtain the single-shot ablation threshold of silicon. The smaller ablation threshold value is found in the DMSO, and the incubation effect is also found to be absent.     

Enhancement of pulsed laser ablation assisted with continuous wave laser irradiation

Continuous wave(CW) laser irradiation is employed to enhance the pulsed laser ablation of silicon and stainless steel(316 L)samples. Different surface temperatures generated by the CW laser irradiation are set as the initial working circumstance for the pulsed laser ablation. The diameter and depth of laser-ablated craters are measured to study threshold fluence, pulse incubation coefficient and ablation rate under different surface temperatures. Numerical simulation employing Heat Transfer in Solid and Deformed Geometry Interface modules in COMSOL is performed to estimate ablation rate theoretically based on Hertz-Knudsen equation. The realized crater-related data are analyzed to further obtain their dependences on surface temperature. The parametric and morphological studies indicate that the weakened plasma shielding effect and thermal diffusion in the ablated region induced by the CW laser irradiation lead to the enhanced pulsed laser ablation significantly.     

Electron paramagnetic resonance in neutron-transmutation-doped semiconductors with a changed isotopic composition

Potential applications of electron paramagnetic resonance (EPR) for investigating and controlling the process of neutron transmutation doping (NTD) of semiconducting germanium, silicon, and silicon carbide are discussed. It is shown that EPR enables one to control the process of annealing of radiation-induced defects in semiconductors subject to neutron irradiation and to detect the shallow donors restored in the process of annealing of donor-compensating defects by observing EPR signals from these donors. EPR can be used to separately detect isolated donors and clusters of two, three, and more exchange-bound donor atoms and thereby determine the degree of nonuniformity of the impurity distribution over the crystal. Neutron transmutation doping is demonstrated to produce a fairly uniform arsenic-donor distribution in a germanium crystal. It is argued that semiconductors enriched in the selected isotopes should be used for NTD. The results of an investigation of phosphorus donors in silicon carbide are presented.     

Phase transitions in erbium-doped silicon exposed to laser radiation

The dynamics of phase transitions induced by nanopulsed ruby laser radiation (80 nsec, 2 J/cm²) both in silicon layers doped with erbium ions and in those containing doped erbium and oxygen have been studied by an optical probing method. It is shown that the reflectivity behavior of structures under pulsed irradiation is governed by phase transitions (melting and crystallization) of implanted silicon and also by interference effects at the interfaces of the resulting phases. It is established that the profiles of erbium distribution change under nanosecond laser irradiation and that the dopant is forced out to the surface due to a segregation effect at small implantation doses. As the implanatation dose increases, diffusion deep into the sample tends to prevail over segregation. A considerable increase in the photoluminescence peak intensity at 0.81 eV is found after both the pulsed laser processing and thermal post-annealing of doped samples as opposed to spectra of samples subjected either to thermal annealing or to pulsed laser irradiation. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 2, pp. 225–231, March–April, 2009.     

Photon recycling transport in bulk GaAs probed by μSR with laser irradiation

A newly developed μSR method combined with a tunable, high power and sharply pulsed laser was applied to GaAs. Anomalous transport phenomena of the photo excited effects into bulk crystal were observed, given that the stopping range of implanted muons is about 200 times larger than photo-absorption depth. In addition, the measurement of photon energy dependence of muon spin depolarization under laser irradiation suggests the impurity level associated with Mu _BC ⁰ is located within the band gap of GaAs. This revised version was published online in August 2006 with corrections to the Cover Date.     

Assessing the effect of hydrogen on the electronic properties of 4H-SiC

As a common impurity in 4H silicon carbide (4H-SiC), hydrogen (H) may play a role in tuning the electronic properties of 4H-SiC. In this work, we systemically explore the effect of H on the electronic properties of both n-type and p-type 4H-SiC. The passivation of H on intrinsic defects such as carbon vacancies (V_C) and silicon vacancies (V_Si) in 4H-SiC is also evaluated. We find that interstitial H at the bonding center of the Si-C bond (H_i^bc) and interstitial H at the tetrahedral center of Si (H_i^Si-te) dominate the defect configurations of H in p-type and n-type 4H-SiC, respectively. In n-type 4H-SiC, the compensation of H_i^Si-te is found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4H-SiC. The compensation of H_i^bc is negligible compared to that of V_C on the p-type doping of Al-doped 4H-SiC. We further examine whether H can passivate V_C and improve the carrier lifetime in 4H-SiC. It turns out that nonequilibrium passivation of V_C by H is effective to eliminate the defect states of V_C, which enhances the carrier lifetime of moderately doped 4H-SiC. Regarding the quantum-qubit applications of 4H-SiC, we find that H can readily passivate V_Si during the creation of V_Si centers. Thermal annealing is needed to decompose the resulting V_Si-nH (n=1-4) complexes and promote the uniformity of the photoluminescence of V_Si arrays in 4H-SiC. The current work may inspire the impurity engineering of H in 4H-SiC.     

Thermal description of laser annealing

Heating and cooling rates as well as melting and solidification velocity of surface layers of irradiated samples by laser pulses are semi-quantitatively described in terms of heat flow concepts based on the assumption that laser light is directly converted in lattice heating. The range of validity of this approach compared with a more complete scheme taking into account the free carrier plasma evolution is sketched and the importance of Auger effect in the plasma-lattice coupling mechanism is detailed. The most important consequences of the quencing rates achievable by short laser pulse irradiation on the structure modification of semiconductor surface layers are reviewed with more details on the liquid to amorphous silicon transition. This is in fact the more new and less understood fast solidification process induced by pulsed laser irradiation.