垂直取向FePt/Ag纳米颗粒薄膜的结构和磁性

用磁控溅射法在单晶MgO(100)基片上制备了［FePt 2 nm/Ag dnm］₁₀多层膜， 经真空热处理后，得到具有高矫顽力的垂直取向L1₀-FePt/Ag颗粒膜.x射线衍射结 果表明，在250 ℃的热基片上溅射，当Ag层厚度d=3—11 nm时，FePt颗粒具有很好的［001］取向，随着Ag层厚度的增加，FePt颗粒尺寸减小.［FePt 2 nm/Ag 9 nm］₁₀经过6 00 ℃真空热处理15 min后，颗粒大小仅约8 nm，垂直矫顽力达到692 kA/m.这种无磁耦合作用的颗粒膜，适合用作超高密度的垂直磁记录介质. 关键词： 磁控溅射 垂直磁记录 纳米颗粒膜 0-FePt/Ag')" href="#">L1₀-FePt/Ag     

利用［Fe/Pt］n多层膜降低L10-FePt有序化温度

采用直流磁控溅射方法制备了Fe/Pt多层膜和FePt单层薄膜，再经不同温度真空热处理得到 了有序相L10₀-FePt薄膜.通过x射线衍射谱和磁性研究表明，FePt单层薄膜需 要在500℃ 以上热处理，才能开始有序化转变，而Fe/Pt多层膜可以降低FePt薄膜有序化温度.［Fe(1 5nm)/Pt(15nm)］13₁₃薄膜在350℃热处理后，有序度已经增加到 06，相应矫 顽力达到了501kA/m.多层膜化促进有序化在较低的温度下进行，这是由于热处理过程中多 关键词： 0-FePt有序相')" href="#">L10₀-FePt有序相 磁控溅射 有序度 Fe/Pt多层膜     

利用FePt/Au多层膜结构制备垂直磁记录L10-FePt薄膜

利用磁控溅射方法在100℃的MgO单晶基片上制备了［FePt/Au］₁₀多层膜,并研究了采用FePt/Au多层膜结构对FePt薄膜的有序化温度、矫顽力（H_C）、垂直磁各向异性、晶粒尺寸以及颗粒间磁交换耦合作用的影响.磁性测试结果表明：FePt/Au多层膜在退火后具有较高的H_C、良好的垂直磁各向异性、较小的晶粒尺寸且无磁交换耦合作用.截面高分辨电镜分析表明：Au可以缓解MgO和FePt之间较大的晶格错配,从而促进薄 关键词： 0-FePt薄膜')" href="#">L1₀-FePt薄膜 有序化温度 垂直磁各向异性 磁交换耦合作用     

Ag和Ti底层对[Fe/Pt]n多层膜有序化的影响

利用磁控溅射的方法，在热玻璃基片上制备了以Ag，Ti，Cu，Cr，Pt和Ta为底层的［Fe/Pt］_n多层膜，后经不同温度真空热处理，得到L1₀有序结构的FePt 薄膜（L1₀-FePt）.实验结果表明，以Ag和Ti为底层，通过采用基片加温，同时 利用［Fe/Pt］_n多层膜结构，可以促进FePt薄膜的有序化过程，使FePt-L1_０有序化温度从500℃降低到350℃.在较高的温度下退火，以Ag为底层对薄膜的磁性 能影响较小，而以Ti为底层在高于500℃退火后，矫顽力明显下降.在400℃退火20min后，以 Ag和Ti为底层的样品平行膜面的矫顽力分别达到597kA/m和645kA/m，剩磁比分别达到0.81和 0.94，为将来FePt-L1_０有序相合金薄膜用于未来超高密度磁记录介质打下基础. 关键词： ０-FePt薄膜')" href="#">L1_０-FePt薄膜 有序化温度 底层 多层膜结构     

Cu掺杂对FexPt1－x薄膜有序化的影响

利用磁控溅射制备了薄膜厚度为50nm的系列(Fe_xPt_1-x)_100-yCu_y(x=0.46—0.56,y=0,0.04,0.12) 样品.利用直流共溅射方法精确控制Fe和Pt的原子比.实验结果表明，当x>0.52时，样品中添加Cu不能促进FePt的有序化，但是对于FePt化学原子定比或富Pt的样品，添加Cu可以促进FePt有序化，而且随着Fe含量的减少，需要更多的Cu添加才能实现较低温度下FePt薄膜的有序化.实验结果表明，原子比(FeCu)/Pt达到1.1—1.2的范围时，即可实现较低温度的有序化. 关键词： 0-FePt有序相')" href="#">L1₀-FePt有序相 磁控溅射 有序度 Cu掺杂     

Bi底层对FePt薄膜的影响

利用磁控溅射的方法，在玻璃基片上制备了以Bi为底层的FePt薄膜，经不同温度真空热处理得到L1₀-FePt薄膜.研究了Bi做底层对FePt薄膜的有序化温度及矫顽力H_c的影响.实验结果表明：以Bi做底层的FePt薄膜在350℃实现低温有序，同时其H_c也有大幅度提高，并且可以在更大成分范围内获得H_c较高的L1₀-FePt薄膜.利用X射线光电子能谱研究了薄膜中Bi原子的分布情况，利用X射线衍射研究了薄膜的晶体学结构变化.结果表明,Bi底层在退火过程中的扩散促进了FePt薄膜有序度的升高. 关键词： 0-FePt薄膜')" href="#">L1₀-FePt薄膜 有序化温度 底层 扩散     

低相变温度垂直取向的CoPtCu/Ag纳米复合膜

采用磁控溅射(Ag/Cu/CoPt)_n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜，通过优化薄膜中Ag以及Cu的含量，成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜，该膜在450℃退火即可发生相变，该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃. 实验结果表明，薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向，Cu元素的加入能有效降低薄膜的有序化温度. 对于特定组分为Co₄₀Pt₃₆Cu₈Ag₁₆的薄膜，经500℃退火后已经显示了明显的(001)取向，垂直于膜面方向上的矫顽力为5.0×10⁵A/m，并且薄膜中晶粒尺寸仅为4—5nm，为将来CoPt-L1₀有序相合金薄膜用于超高密度垂直磁记录介质打下了基础. 关键词： 磁记录材料 CoPt 纳米复合膜     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

室温生长MgO底层诱导(001)取向FePt薄膜的有序化过程对FePt成分的依赖

室温下通过磁控溅射在表面热氧化的Si基片上生长了MgO/Fe_xPt_100-x双层膜和Fe_xPt_100-x单层膜系列样品，Fe_xPt_100-x的原子成分x=48—68.研究了热处理前后不同成分FePt薄膜的晶体结构和磁性的变化，尤其是MgO底层的引入对FePt的晶体结构和磁性的影响 关键词： FePt(001)薄膜 0相')" href="#">L1₀相     

真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

用磁控溅射方法制备了两个具有不同Fe层厚度的［Ni₈₀Co₂₀(L)/Fe(t_Fe)］_N多层膜系列样品,其中t_Fe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni₈₀Co₂₀层厚度L的变化关系.在退火态［Ni₈₀Co₂₀(L)/Fe(0.1nm)］_N系列样品中,发现各向异性磁电阻( 关键词： 多层膜 各向异性磁电阻 界面效应 退火     

Reactive ion etching of FePt using inductively coupled plasma

We propose a reactive ion etching (RIE) process of an L1₀-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system and an etching gas combination of CH₄/O₂/NH₃ was employed. The L1₀-FePt films were deposited on (1 0 0)-oriented MgO substrates using a magnetron sputtering system. The etching masks of Ti were patterned on the FePt films lithographically. The etch rates of ∼16 and ∼0 nm/min were obtained for the FePt film and the Ti mask, respectively. The atomic force microscopy (AFM) analyses provided the average roughness (R_a) value of 0.95 nm for the etched FePt surface, that is, a very flat etched surface was obtained. Those results show that the highly selective RIE process of L1₀-FePt was successfully realized in the present study.     

FePt薄膜中磁相互作用

采用磁控溅射方法在自然氧化的单晶Si(100)衬底上制备了纳米结构的Fe₅₃Pt₄₇薄膜，并研究热处理后薄膜中的磁相互作用、晶粒尺寸与热处理温度的关系.经400℃热处理后，FePt薄膜中有明显的面心四方相形成，薄膜表现出硬磁性，晶粒尺度在20 nm，薄膜内部存在软硬磁交换耦合作用；随着热处理温度升高，硬磁相含量增加.同时由于FePt薄膜的晶粒长大，部分软硬磁晶粒之间的交换耦合作用失效；600℃热处理后，FePt的面心立方相已经完全转变为面心四方相，薄膜矫顽力由硬磁相之间的静磁作用贡献. 关键词： 磁性薄膜 纳米晶 磁性能 热处理     

溅射制备的Co/V多层膜微观结构特征与铁磁共振研究

研究了用射频磁控溅射方法制备的［Co(1.5nm)/V(d_V)］₂₀(0.5nm≤d_V≤4nm)多层膜的结构和磁性.用X射线衍射、透射电子显微镜、高分辨率透射电子显微镜等手段对其结构的分析,表明它们层状周期结构良好,沿膜的生长方向具有fcc Co(111)和bcc V(110)织构,且是由小的柱状晶粒构成的多晶薄膜.界面一定程度的合金化,使其成为成分调制周期结构,也是它们的一个结构特征.由其铁磁共振谱计算得到较小的g因子和4πM_{e 关键词：}     

Effect of annealing in an external magnetic field on the microstructure and magnetic properties of the Fe/FePt/Pt multilayer system

The effect of annealing in an external magnetic field applied perpendicular to the plane of the film on the kinetics of Ll ₀ phase transformation of the microstructure and the magnetic properties of the Fe(2 nm)/FePt(20 nm)/Pt(2 nm) multilayer system has been investigated. The relations between the hysteresis loop shape, magnetic correlation length, and structural disorders, which are characteristic of magnetic information carriers, have been analyzed. It has been found that the annealing of the Fe(2 nm)/FePt(20 nm)/Pt(2 nm) multilayer system at a temperature of 470°C in an external magnetic field of 3500 Oe, which is applied perpendicular to the film plane, leads to the formation of a face-centered tetragonal structure of the Ll ₀ phase in the FePt film, which is characterized by the high coercivity H _c , the (001) preferred texture, the magnetic anisotropy perpendicular to the film plane, small sizes of FePt grains in the film, and weak exchange coupling between the particles. The energy of the external magnetic field encourages the process of transformation of the FePt film into the Ll ₀ phase. Thus, a method has been developed for fabricating multilayer films based on the FePt Ll ₀ phase with the parameters necessary for information carrier materials with perpendicular-type magnetic recording.     

Effect of magnetic field annealing on microstructure and magnetic properties of FePt films

FePt (20 nm) films were annealed in a magnetic field (along the normal direction of the films) at a temperature around the Curie temperature of L1₀ FePt. The influence of magnetic filed annealing on texture and magnetic properties of FePt films were investigated. The results indicate that preferential (0 0 1) orientation and perpendicular anisotropy can be obtained in L1₀ FePt films by using magnetic field annealing around the Curie temperature of L1₀ FePt. This is one of the potential methods to obtain (0 0 1) orientation and thus to improve the perpendicular anisotropy in FePt films.     

Effect of the CrW sublayer on the structure and magnetic properties of thin FePt films

Multilayer Fe₅₅Pt₄₅(20 nm)/Pt(5 nm)/Cr_{100 ? x} W _x (80 nm)/glass structures, in which the Fe₅₅Pt₄₅ magnetic film has a face-centered tetragonal (FCT) structure of the L1₀ phase with the (001) texture, have been prepared using magnetron sputtering. The microstructure and texture of the FePt films have been studied as functions of the W content in the Cr_{100 ? x} W _x sublayer, where 0 < x < 25. It has been established that an increase in the W ion concentration leads to the formation of the (200) texture in the Cr_{100 ? x} sublayer and to an increase in the Cr lattice constant. This is accompanied by a decrease in the temperature at which the facecentered cubic phase transforms into the FCT phase of the FePt films as a result of the increase in tensile stresses along the a axis. It has been found that the coercivity of FePt films deposited on CrW substrates increases with increasing W content in the Cr_{100 ? x} W _x sublayer because the CrW alloy thus formed precludes diffusion between the FePt film and the CrW sublayer. An additional 5-nm-thick intermediate Pt layer is also deposited to suppress diffusion between the FePt and CrW layers. As a result, the highly textured FePt(001) films intended for ultra-high density magnetic information recording are deposited on a substrate heated to a temperature of 400°C and the Cr₈₅W1₁₅ sublayer.