Improving copper plating adhesion on glass using laser machining techniques and areal surface texture parameters

Glass is a promising substitute substrate material being evaluated for electronic packaging technology. Improving the electroless copper plated layer adhesion of the glass is one of the most important considerations for development of the technology. An excimer laser (248 nm) was used for structured texturing of glass surfaces (to improve adhesion) by changing mask dimensions, laser operating parameters and overlapping pitch spacing, and therefore producing a range of micro-scale features. Electroless plated copper adhesion strength was assessed using quantitative scratch testing, demonstrating that micro-patterned structures can significantly improve copper/glass adhesion. New ISO 25178 Part 2 areal surface texture parameters were used to characterise the surface roughness of ablated glass surfaces, and correlated to the scratch testing results. Highly correlated parameters were identified that could be used as predictive surface design tools, directly linking surface topography to adhesion performance, without the need for destructive adhesion quantification via scratch testing.     

平行磨削非轴对称非球面光学元件表面形貌

结合砂轮表面仿真及磨削过程的运动学仿真获得工件表面轮廓、形貌和粗糙度预计,可以作为磨削过程中的理论依据,是精密磨削加工技术中主要的研究内容之一。平行磨削技术是加工非轴对称非球面光学元件的重要手段,而相关的仿真过程报道还很少。提出一种基于平行磨削的精密磨削加工非球面表面生成的仿真方法,该方法主要包含使用高斯方法生成具有不同统计学特征的随机砂轮表面形貌,建立单磨粒运动轨迹方程和圆弧砂轮细分后与工件表面点接触的运动关系,据此给出平行磨削加工表面生成的数值算法,并对不同加工参数下的工件表面形貌进行仿真。仿真结果和测量结果的一致性验证了所给算法的正确性和有效性     

AFM investigation on surface evolution of amorphous carbon during ion-beam-assisted deposition

Hydrogen-free amorphous carbons (a-C) have been prepared on mirror-polished Si(1 1 1) wafers through thermally evaporated C₆₀ with simultaneous bombardments of Ne⁺ ions. The time evolution of film surfaces has been characterized by atomic force microscopy (AFM) at two temperatures of 400 and 700 °C, respectively. Based on the topography images and the root-mean-square (rms) roughness analysis, it is found that the a-C surfaces present roughening growth at the initial stage. With increasing growth time, the cooperative nucleation of the islands and pits appears on the surfaces, suggesting three-dimensional growth, and then they continue to evolve to irregular mounds at 400 °C, and elongated mounds at 700 °C. At the steady growth stage, these surfaces further develop to the structures of bamboo joints and ripples corresponding to these two temperatures, respectively. It is believed that besides ion sputtering effect, the chemical bonding configurations in the amorphous carbon films should be taken into considerations for elucidating the surface evolutions.     

光学非球曲面器件的超精密磨削加工技术研究

为磨削加工出高精度、高质量的光学非球曲面器件。详尽分析了砂轮的安装及半径等误差对零件加工精度的影响。设计研制出了一套非球曲面磨削系统 ,并用它进行了实验研究。实验结果表明 :要获得高精度的非球曲面器件 ,只有当金刚石砂轮的平均磨粒尺寸低于 10 μm ,并在采用较高的砂轮线速度和较小的进给量的情况下 ,才能实现光学非球曲面的超精密磨削加工 ,经过各种磨削参数的优化选择 ,其非球曲面最终的零件轮廓精度为 0 4 μm ,表面粗糙度Ra优于 0 0 1μm。     

Optical imaging of microroughness on polished silicon wafers

The microscopic surface morphology of device quality polished silicon wafers has been imaged using laser scanning optical microscopy (SOM) in differential phase contrast (DPC) mode. The SOM-DPC technique has subnanometre vertical sensitivity and submicron lateral resolution. Surface texture was observed on all wafers examined. This was found to depend mainly on the originating wafer supplier and year of manufacture, rather than on any characteristic of the silicon material itself, and was assigned to silicon surface roughness. The amplitude of the directional 1–10 m wide polishing features observed on many of the as-received wafers was estimated to be in the region of 1–2 nm. An additional isotropic submicron-scale roughness (incompletely resolved optically) was present in all cases. Atomic misorientation steps were also observed on specially-prepared wafers.     

Planarization machining of sapphire wafers with boron carbide and colloidal silica as abrasives

The as-cutted sapphire wafers are planarized by the grinding and polishing two-step machining processes with micrometer B₄C and nanometer silica as abrasives, respectively. The material removal rates (MRRs) of two processes are measured. During the polishing process, the MRR increases with the down-pressure increased, whereas the rotational speeds have less effect on the MRR. The alkaline colloidal silica is more favorable than the acidic to polish sapphire wafer. The ground and polished surfaces of the substrate are compared by scanning electron microscopy, atomic force microscopy, and X-ray rocking curves. Our results show that B₄C abrasives are effective in elimination of the ununiformity in thickness within a wafer. The colloidal silica can achieve a nanoscale flatness of wafer, but the lasting polishing time seems unfavorable. The polishing process is also analyzed in terms of chemical mechanical polishing mechanism.     

Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatment

The effect of both surface morphology and wet-chemical pre-treatment on electronic surface and interface properties was investigated for mono- and polycrystalline silicon substrates with special surface structures. Surface charge, energetic distribution, and density of rechargeable states on these surfaces were determined by surface photovoltage (SPV) measurements. These results were correlated to previously reported findings on atomically flat Si(111) and Si(100) surfaces of monocrystalline wafers. In this paper, a specially optimised sequence of cleaning, wet-chemical oxidation, and oxide removal procedures is described in detail for the first time. This method was successfully applied in order to remove contaminations and damaged surface layers and to obtain atomically flat areas on substrates with evenly distributed atomic steps, polycrystalline and monocrystalline substrates with randomly distributed pyramids. A significant reduction in surface micro-roughness, interface state density, and recombination loss was achieved. Using passivation by wet-chemical oxidation or H-termination, respectively, the optimised surface state can be preserved by the time of following preparation steps and during subsequent a-Si:H plasma enhanced chemical vapour deposition (PECVD).     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.     

Tailoring the wetting response of silicon surfaces via fs laser structuring

Control over the wettability of solids and manufacturing of functional surfaces with special hydrophobic and self-cleaning properties has aroused great interest because of its significance for a vast range of applications in daily life, industry and agriculture. We report here a simple method for preparing stable superhydrophobic surfaces by irradiating silicon (Si) wafers with femtosecond (fs) laser pulses and subsequently coating them with chloroalkylsilane monolayers. It is possible, by varying the laser pulse fluence on the surface, to achieve control of the wetting properties through a systematic and reproducible variation of roughness at micro- and nano-scale which mimics both the topology of the “model” superhydrophobic surface—the natural lotus leaf—, as well as its wetting response. Water droplets can move along these irradiated superhydrophobic surfaces, under the action of small gravitational forces, and experience subsequent immobilization, induced by surface tension gradients. These results demonstrate the potential of manipulating liquid motion through selective laser patterning.     

Effects of surface inactivation, high temperature drying and preservative treatment on surface roughness and colour of alder and beech wood

Although extensive research has been conducted in wood surface quality analysis, a unified approach to surface quality characterisation does not exist. Measurements of the variation in surface roughness and surface colour are used widely for the evaluation of wood surface quality. Colour is a basic visual feature for wood and wood-based products. Colour measurement is one of the quality control tests that should be carried out because the colour deviations are spotted easily by the consumers. On the other hand, a common problem faced by plywood manufacturers is panel delamination, for which a major cause is poor quality glue-bonds resulting from rough veneer. Rotary cut veneers with dimensions of 500 mm × 500 mm × 2 mm manufactured from alder (Alnus glutinosa subsp. barbata) and beech (Fagus orientalis Lipsky) logs were used as materials in this study. Veneer sheets were oven-dried in a veneer dryer at 110 °C (normal drying temperature) and 180 °C (high drying temperature) after peeling process. The surfaces of some veneers were then exposed at indoor laboratory conditions to obtain inactive wood surfaces for glue bonds, and some veneers were treated with borax, boric acid and ammonium acetate solutions. After these treatments, surface roughness and colour measurements were made on veneer surfaces. High temperature drying process caused a darkening on the surfaces of alder and beech veneers. Total colour change value (ΔE^*) increased linear with increasing exposure time. Among the treatment solutions, ammonium acetate caused the biggest colour change while treatment with borax caused the lowest changes in ΔE^* values. Considerable changes in surface roughness after preservative treatment did not occur on veneer surfaces. Generally, no clear changes were obtained or the values mean roughness profile (R_a) decreased slightly in R_a values after the natural inactivation process.     

基于激光散斑成像的零件表面粗糙度建模

表面粗糙度是衡量机械表面加工水平的重要参数. 通过构建一套激光散斑成像采集系统, 获取了不同表面加工类型和不同粗糙度值的零件表面激光散斑图像. 应用Tamura纹理特征理论提取图像的纹理粗糙度、对比度、方向度特征, 并分析了这三个特征与表面粗糙度的关系. 发现了纹理粗糙度特征与表面粗糙度的单调关系, 推导出平磨、外磨、研磨三种表面加工工艺的粗糙度值与图像纹理粗糙度特征的数学函数关系, 实现了表面粗糙度的测量. 同时, 利用Tamura纹理特征与加工工艺的依赖关系, 建立了基于贝叶斯网络的工艺识别推理模型, 推理出了零件表面加工工艺. 通过为多种加工类型表面建立粗糙度测量模型, 为粗糙度测量提供了新思路. 实验证明所提的粗糙度测量模型能以较高的准确率识别出零件表面加工类型并测量出其表面粗糙度值.     

Visualization of the surface roughness by x-ray scanning

In the x-ray region the reflectivity of a superpolished surface strongly depends on its roughness. This effect may be used to obtain a two-dimensional map of the roughness spatial distribution for flat surfaces with an average roughness height of the order of one nanometer or less. The method described in the paper lies in the illumination of the sample by a highly collimated x-ray beam, and a linear one-dimensional scanning of the sample with simultaneous registration of the specular component of the reflected beam by multielement linear detector. This method may be used to monitor the surface quality of silicon semiconductor wafers, computer hard disks, x-ray and laser mirror substrates etc.     

High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications

Direct wafer bonding between high-density-plasma chemical vapour deposited (HDP-CVD) oxide and thermal oxide (TO) has been investigated. HDP-CVD oxides, about 230 nm in thickness, were deposited on Si(0 0 1) control wafers and the wafers of interest that contain a thin strained silicon (sSi) layer on a so-called virtual substrate that is composed of relaxed SiGe (∼4 μm thick) on Si(0 0 1) wafers. The surfaces of the as-deposited HDP-CVD oxides on the Si control wafers were smooth with a root-mean-square (RMS) roughness of <1 nm, which is sufficiently smooth for direct wafer bonding. The surfaces of the sSi/SiGe/Si(0 0 1) substrates show an RMS roughness of >2 nm. After HDP-CVD oxide deposition on the sSi/SiGe/Si substrates, the RMS roughness of the oxide surfaces was also found to be the same, i.e., >2 nm. To use these wafers for direct bonding the RMS roughness had to be reduced below 1 nm, which was carried out using a chemo-mechanical polishing (CMP) step. After bonding the HDP-CVD oxides to thermally oxidized handle wafers, the bonded interfaces were mostly bubble- and void-free for the silicon control and the sSi/SiGe/Si(0 0 1) wafers. The bonded wafer pairs were then annealed at higher temperatures up to 800 °C and the bonded interfaces were still found to be almost bubble- and void-free. Thus, HDP-CVD oxide is quite suitable for direct wafer bonding and layer transfer of ultrathin sSi layers on oxidized Si wafers for the fabrication of novel sSOI substrates.     

Effect of surface micro-topography of titanium material on the behaviors of rabbit osteoblast in vitro

To study interactions of osteoblast on different topography surfaces of titanium material through in vitro systems, four kinds of micro-topography surfaces on novel titanium material were investigated. They were laser-scanned surface (LS), sandblasted surface (SS), machine-tooled surface (MS) and polished surface (PS). The titanium samples were seeded with osteoblast and maintained for a period of 1-12 days. Adhesion in 24 h, proliferation in 12 days and ALP activity in 11 days were assessed. The cell morphologies were observed by scanning electron microscopy and fluorescence microscopy. The investigation showed better cell proliferation and best cell osteogenic differentiation on the micro-grooved surface (LS) at the cell scale (50 μm). Furthermore, osteoblast on the micro-grooved surfaces also displayed a more similar morphology to osteoblast in vivo. It was shown that surface micro-texture at the cell scale have a better effect on cell responses than rough surface and surface texture above the cell scale (>100 μm). The regular micro-grooved titanium surface at the cell scale can offer a better cell growth environment compared with the other titanium surfaces.     

Optimization of the surface texture for silicon carbide sliding in water

Surface texturing has been recognized as an effective means to improve the tribological performances of sliding surfaces. Usually, generation additional hydrodynamic pressure to increase the load carrying capacity is regarded as the most significant effect of surface texture. In the case of silicon carbide sliding against identical material in water, the experimental results indicate that surface texture is also helpful to improve the running-in progress to smooth the contact surfaces, showing another reason to result in low friction. Based on the consideration of enhancing the generation of hydrodynamic pressure and improving running-in progress, a surface texture pattern, which was combined with large (circle, 350 μm in diameter) and small (rectangular, 40 μm in length) dimples, was designed to maximize the texture effect on the load carrying capacity of SiC surfaces sliding in water. The friction coefficient of such textured surface was evaluated and compared with that of untextured and those only with large or small dimples only. The friction reduction mechanisms of the patterns with different dimples in size are discussed.     

Studies of interface structures of W films grown on patterned and bare Si(100) by TEM

+ Si(100) and bare Si(100) wafers by low pressure chemical vapour deposition (LPCVD) at 230–280 °C. The films were investigated by transmission electron microscopy (TEM). The cross-sectional TEM samples of W/Si(100) exhibited a fine scale interface roughness, which was attributed to the surface preparation. Irregular W plug structures were observed depending on the predeposition procedures. It was observed that an insufficient deposition of W films on the contact surface leads to the presence of aluminium around and underneath the plugs. This was observed by energy dispersive X-ray spectrometry (EDX). A study, using conventional electron diffraction, confirmed that no silicides formed at the interfaces of W-bare Si(l00) wafers. Received: 16 December 1996/Accepted: 6 May 1997     

X-ray topography study of monocrystalline silicon wafers diffused with phosphorus by different methods

To reduce the cost of the emitter diffusion process, there has been increasing interest to substitute the standard process of batch POCl₃ emitter diffusion used in the silicon solar-cell manufacturing industry with in-line diffusion processes such as the spray-on and screen-printing process. For this reason, it is essential to study and compare the processes of different diffusion methods from the point of view of the crystalline quality of the final wafers. X-ray transmission topography was employed to characterize the possible precipitates and other microdefects generated in Czochralski-grown silicon (Cz Si) during the emitter diffusion process carried out by screen-printing, spray-on and the standard process, in which the emitter was provided by a liquid (POCl₃) source. The results indicate that the phosphorus diffusion process influences the crystalline quality of the wafers and the efficiency of the external gettering process that takes place during phosphorus diffusion depends on the diffusion method employed.     

Laser-based modification of wettablility for carbon fiber reinforced plastics

This paper presents a laser-based technique for surface preparation of carbon fiber reinforced plastics (CFRP) for bonded repair. Ablative and non-ablative treatment of the surface is produced by variation of laser power and the resulting surface energy determined by goniometric measurements. Wettability has been directly related to a calculated wetting envelope. The investigations show an additional major influence of the surface topography on the shear strength of the joint. The direction of the applied laser lines in relation to the fiber direction was identified as an essential influence for this roughness. A ns IR-laser demonstrates high potential for surface preparation as well as for selective ply removal. The laser prepared surfaces are examined through optical microscopy, scanning electron microscope (SEM), and contact angle measurements. The wettability studies show a significant increment in surface energy after laser treatment, in relation to non-treated as well as surface grinding samples.     

Effect of surface roughness on the development of protective Al2O3 on Fe-10Al (at.%) alloys containing 0-10 at.% Cr

The effect of alloy surface roughness, achieved by different degrees of surface polishing, on the development of protective alumina layer on Fe-10 at.% Al alloys containing 0, 5, and 10 at.% Cr was investigated during oxidation at 1000 °C in 0.1 MPa oxygen. For alloys that are not strong Al₂O₃ formers (Fe-10Al and Fe-5Cr-10Al), the rougher surfaces increased Fe incorporation into the overall surface layer. On the Fe-10Al, more iron oxides were formed in a uniform layer of mixed aluminum- and iron-oxides since the layer was thicker. On the Fe-5Cr-10Al, more iron-rich nodules developed on an otherwise thin Al₂O₃ surface layer. These nodules nucleated preferentially along surface scratch marks but not on alloy grain boundaries. For the strong Al₂O₃-forming Fe-10Cr-10Al alloy, protective alumina surface layers were observed regardless of the surface roughness. These results indicate that the formation of a protective Al₂O₃ layer on Fe-Cr-Al surfaces is not dictated by Al diffusion to the surface. More cold-worked surfaces caused an enhanced Fe diffusion, hence produced more Fe-rich oxides during the early stage of oxidation.     

表面粗糙度对激光诱导击穿光谱信号的影响

硅橡胶复合绝缘子是高压输电线路的关键设备,长期在复杂外界环境条件下带电运行后会发生表面老化,表现为粉化、褪色、粗糙度和硬度上升等现象。粗糙度作为复合绝缘子的老化特征量之一,其测量是复合绝缘子在线带电检测的难题。激光诱导击穿光谱技术(laser-induced breakdown spectroscopy, LIBS)适用于开展输电线路复合材料的远程在线检测,但粗糙度对LIBS信号的影响还没有得到系统的研究,利用这种基体效应进行绝缘子表面粗糙度的测量尚无报道。制备了不同粗糙度的硅橡胶新样品,与500 kV线路退运的复合绝缘子样品进行对比分析,研究了硅橡胶材料的粗糙度对LIBS信号的影响,结果表明,对于新制备硅橡胶材料随着粗糙度的增加,各主体元素特征谱线强度会随之增强,不同主体元素之间的原子谱线强度比（Si 288.2 nm/C 247.9 nm和Al 394.4 nm/Si 288.2 nm）随之下降,说明样品粗糙度对LIBS测量结果影响显著。但特征谱线强度及不同主体元素原子谱线强度比与粗糙度之间的函数关系不明显,难以用于粗糙度测量。硅橡胶的主体元素为Si,Al,C和O等,考虑元素含量及特征谱线的选取方便选择Si为主要分析元素。对于Si原子谱线强度比,选取了两条上能级相近（E_ki＝40 991.88, 39 955.05 cm-1）的原子谱线（SiⅠ288.2 nm,SiⅠ250.7 nm）作为分析线,在满足局部热力学平衡与光学薄的条件下两条谱线的强度比应为定值,但样品粗糙度的改变会影响脉冲激光烧蚀材料表面的过程,从而改变等离子体的状态,使得谱线强度比值也随之变化。上述两条硅原子谱线强度比和粗糙度建立的定标关系,线性相关系数为0.88。对于500 kV输电线路退运的老化硅橡胶材料,其表面由于老化有部分氢氧化铝填料析出,使得基体成分不均匀性更为显著,其表面也变得更为粗糙,这导致一对谱线强度比值作为定标函数,实用性降低。因此针对老化硅橡胶材料,除了选择Si元素谱线(SiⅠ250.7 nm,SiⅠ251.4 nm,SiⅠ251.9 nm)以外,还引入了Al元素谱线(AlⅠ305.7 nm, AlⅠ305.9 nm),利用三组谱线强度比进行多元回归分析,对于两个实测粗糙度为2.659和2.523 μm老化硅橡胶样品,LIBS测量的相对误差分别为0.218和0.189。结果表明对同样成分的复合材料,表面粗糙度对LIBS信号的影响是必须考虑的,而利用这种基体效应,开展远程在线测试复合绝缘子表面粗糙度,对于高压输电线路检测运维具有重要的应用价值。