CVD金刚石薄膜探测器性能研究

通过实验测量和理论分析, 从载流子动力学角度研究了用于脉冲辐射探测的CVD金刚石薄膜探测器的适用结构、电荷收集效率和时间响应性能. 结果表明, CVD金刚石薄膜可以制成均匀型结构的探测器; 薄膜中的缺陷会降低探测器的电荷收集效率, 探测器的电荷收集效率随场强增大而增大直至饱和. 已研制的CVD金刚石探测器电荷收集时间可达719ps, 在2.5V/μm场强下达到饱和, 电荷收集效率 达60.5%; 晶格散射是影响探测器时间响应的主要因素, 选用大晶粒甚至单晶金刚石薄膜可以提高探测器时间响应.     

金刚石膜α粒子探测器的电学性能研究

从外加偏压、预辐照处理等方面对三明治结构金刚石膜探测器在α粒子辐照下的电学性能进行了研究.电流-电压特性和脉冲高度分布测试和分析表明，金刚石膜探测器在能量为5.5MeV的²⁴¹Am α粒子辐照一定时间后，其暗电流有所增加.探测器顶电极施加负偏压时，在α粒子辐照下得到的净电流和信噪比均较大.Raman光谱测试表明，造成上述现象的原因很可能是金刚石膜厚度方向的不均匀性分布.负偏压下探测器对α粒子的能量分辨率为25.0%，优于正偏压下的能量分辨率(38.4%).随着α粒子辐照时间的延长，探测器的净电流和电荷收集效率均有明显增加. 关键词： 金刚石薄膜 辐射探测器 电学性能 脉冲高度分布     

4H-SiC肖特基二极管的电荷收集特性

针对极端环境下耐辐照半导体核探测器的研制需求,采用耐高温、耐辐照的4H碳化硅(4H-SiC)宽禁带材料制成肖特基二极管,研究了该探测器对241Am源粒子的电荷收集效率。从电容-电压曲线得出该二极管外延层净掺杂数密度为1.991015/cm3。从正向电流-电压曲线获得该二极管肖特基势垒高度为1.66 eV,理想因子为1.07,表明该探测器具备良好的热电子发射特性。在反向偏压高达700 V时,该二极管未击穿,其漏电流仅为21 nA,具有较高的击穿电压。在反向偏压为0~350 V范围内研究了该探测器对3.5 MeV 粒子电荷收集效率,在0 V时为48.7%,在150 V时为99.4%,表明该探测器具有良好的电荷收集特性。     

用于质子和伽马射线探测的金刚石薄膜探测器的辐照性能

 研制出CVD金刚石薄膜探测器,在国家串列加速器和⁶⁰Co稳态辐射源上分别完成了该探测器对9 MeV质子束流和1.25 MeV γ射线的辐照性能研究。结果表明:该探测器在9 MeV质子照射累积强度达到10¹³ cm^-2时,探测器信号电荷收集效率减小量低于3.5%,辐照前后探测器暗电流没有明显变化。计算得到9 MeV质子对该探测器的损伤系数为1.3×10^-16 μm^-1·cm²。由于γ射线与金刚石作用产生的电子起到了填补缺陷的作用,探测器信号电荷收集效率随γ射线照射剂量的增加略有增加,在γ射线累积照射量达到10.32 C/kg时,其增幅小于0.7%。说明金刚石薄膜探测器具有较高耐辐照强度,适用于高强度辐射测量领域。     

包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响

利用射频磁控溅射设备制备ZnO薄膜, 最终制备ZnO/Pt纳米粒子/ZnO 结构的金属-半导体-金属型紫外光电探测器. 研究了Pt纳米粒子处在ZnO薄膜层中的不同深度对金属-半导体-金属型紫外光电探测器响应性能的影响. 结果表明, 探测器的响应度随着Pt纳米粒子在ZnO薄膜层中所处深度的增大而升高. 在60 V偏压下, 包埋Pt最深的探测器在波长365 nm处取得响应度最大值1.4 A·W^-1, 包埋有Pt探测器的响应度最大值为无Pt 纳米粒子探测器响应度最大值的7倍. 结合对ZnO薄膜表面的表征及探测器各项性能的测试, 得出包埋Pt纳米粒子增强器件的响应性能可归因于表面等离子体增强散射.     

新型CVD金刚石X射线探测器时间性能初步研究

在微带结构化学气相沉积(CVD)探测器的基础上,利用同轴结构输出部件结合隔离直流电路制作了单端连接同轴探测器,该探测器主要用于激光等离子体的X射线测量。探测器采用直径为4mm的圆柱体CVD金刚石,金刚石一个端面镀有网格状电极,另一端镀有圆盘状电极。网格状电极既可保证正常施加偏压,也可使X射线直接照射至金刚石表面。在短脉冲激光装置上开展了探测器的时间响应特性实验,结果显示探测器上升时间为61ps。CVD金刚石探测器的时间性能研究为探测器的优化改进奠定了基础。     

快响应化学气相沉积金刚石软X射线探测器的研制

利用高品质化学气相沉积(CVD)金刚石,采用微带线结构研制了CVD金刚石软X射线探测器。利用脉宽为10 ps的激光器进行了探测器响应时间的测量,获得半宽度为115 ps的信号,经过计算得到CVD金刚石探测器的上升时间为49 ps。在激光原型装置实验中,通过与软X射线能谱仪测量结果的相互比对,证实所研制的CVD金刚石探测器是一种响应时间快、信噪比高、性能可靠的软X射线探测器。     

新型MSM结构砷化镓半导体探测器的性能

研究一种新型双金属接触GaAs半导体探测器的性能,测量了²⁴¹Am 5.48MeVα粒子、⁵⁷Co 122keV的光子和⁹⁰Sr 2.27MeVβ粒子的最小电离粒子谱,比较了一个3×3mm²的GaAs芯片在经过¹³⁷Cs 662keV光子约1300rad辐照前后的电荷收集效率和能量分辨率.测量结果显示这种新型金属─半导体─金属(MSM)结构的半导体探测器不仅在室温下对各种粒子具有良好的探测能力,而且具有很好的抗辐照性能.     

4H-SiC探测器的γ辐照影响研究

为研究4H-SiC探测器的抗γ辐照性能,使用40万Ci级的60Co源对4H-SiC探测器进行了数次辐照,累积辐照剂量最大为1 MGy(Si),并在辐照后对4H-SiC的性能进行了测试。随着累积辐照剂量增加,4H-SiC探测器的正向电流增大,而反向电流恰好相反;根据4H-SiC探测器的正向I-V曲线可提取理想因子和肖特基势垒,理想因子从1.87增加到2.18,肖特基势垒从1.93 V减小至1.69 V;4H-SiC探测器对241Am源产生的α粒子进行探测时,探测器的电荷收集率从95.65%退化到93.55%,测得能谱的能量分辨率由1.81%退化到2.32%。4H-SiC探测器在受到1 MGy(Si)的γ辐照后,与未受到辐照时相比,在探测能量为5.486 MeV的α粒子时能量分辨率和电荷收集率仅退化了28.18%和2.2%,仍具备优良的探测性能。     

SiC-pn结二极管α粒子辐射效应

为了研究6HSiC材料制作的pn结二极管探测器的辐照特性,采用蒙卡程序模拟研究了4.3和1.8MeV能量的α粒子在辐照探测器中的物理过程。介绍了二极管探测器的工艺制作和物理参数,根据其结构建立了仿真模型,利用蒙卡程序进行了α粒子照射的仿真研究。研究结果直观地反映了α粒子在探测器中的输运情况。α粒子在探测器中的辐射效应主要是电离作用,电离产生的电子空穴对形成一定的分布。给出了α粒子在探测器中的电离能量损失分布及二极管探测器的电荷收集效率表达式。     

Influence of electron irradiation on properties of semi-insulating GaAs detectors

The effects of electron beam irradiation on electrical and spectrometric properties of semi-insulating (SI) GaAs detectors were studied. The electric properties were monitored by reverse and forward current–voltage characteristics. In general, a breakdown voltage decrease with the dose was observed. However, some samples showed a local increase in the breakdown voltage at doses between 5 and 10?kGy. The detector spectrometric properties (the charge collection efficiency (CCE), the energy resolution and the detection efficiency) were evaluated from measured spectra of the ²⁴¹Am radionuclide gamma source before and after electron irradiation. The CCE and energy resolution showed minor changes after irradiation. The detection efficiency noticed an initial increase (up to a dose of 5?kGy) followed by a permanent decrease. At 30?kGy, the overall degradation of detector functionality was observed with all samples.     

液体闪烁体探测器测量皮秒激光脉冲中子源能谱

在星光Ⅲ实验装置上开展皮秒激光脉冲中子源实验,使用液体闪烁体探测器测得较好的中子信号,利用飞行时间法获得中子的能量/时间分布,通过示波器电压时间积分与阻抗之比得到不同能量段的电荷值。建立液体闪烁体探测器Geant4计算模型,通过实际打靶情况与标定情况下液体闪烁体探测器出光口收集到的可见光光子数之比,结合标定的灵敏度数据,获得液体闪烁体探测器对不同能量中子的灵敏度。计算得到源发射的中子能谱,能量在1 MeV以上的液体闪烁体探测器方向测得的中子产额为1.04108 sr-1。     

Performance of CVD diamond alpha particle detectors

The inherent properties of diamond can, in principle, make it an ideal material for radiation detectors with interesting capabilities. We have fabricated a particle detector using a free-standing CVD diamond film with a thickness of 300 μm and area of 2 cm×2 cm and measured 5.5 MeV α spectra from an ²⁴¹Am source. The I-V characteristics indicate that a fine Ohmic contact is formed between the CVD diamond and electrode. At the external electric field 10 kV/cm, the collection efficiency reaches an average value of 41%, corresponding to a charge collection distance (CCD) of about 259 μm and the energy resolution achieves 4.3%.     

一种用于RIBLL2的纵向场多次取样型电离室

为兰州第二条放射性束流线（RIBLL2）研制了一台用于ΔE测量的纵向场多次取样型电离室。 利用3组分α源（239Pu为3.435 MeV, 241Am为3.913 MeV, 244Cm为4.356 MeV）对取样单元进行了测试, 确定了电离室的最佳工作电压为－500 V, 沉积能量为3.435 MeV时, 取样单元的能量分辨为271.4 keV(FWHM)。 利用Geant4对此电离室的整体性能进行了模拟, 表明可以对Z≥4的离子实现较好的粒子鉴别。 A longitudinal field MUltiple Sampling Ionization Chamber (MUSIC), which makes multiple measurements of energy loss for very high energy heavy ions at RIBLL2, has been constructed and tested with 3 constituent α source （239Pu: 3.435 MeV, 241Am: 3.913 MeV, 244Cm: 4.356 MeV）. The voltage plateau curve has been plotted and －500 V is determined as a proper work voltage. The energy resolution is 271.4 keV FWHM for the sampling unit when 3.435 MeV energy deposited. A Geant4 Monte Carlo simulation is made and it indicates the detector can provide unique particle identification for ions Z≥4.     

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template

Alpha particle radiation detectors with planar double Schottky contacts (DSC) are directly fabricated on 5-μm-thick epitaxial semi-insulating (SI) GaN:Fe film with resistivity higher than 1×10⁸Ω·cm. Under 10 V bias, the detector exhibits a low dark current of less than 5.0×10^-11 A at room-temperature, which increases at higher temperatures. Linear behavior in the semi-log reverse current-voltage plot suggests that Poole-Frenkel emission is the dominant carrier leakage mechanism at high bias. Distinct double-peak characteristics are observed in the energy spectrum of alpha particles regardless of bias voltage. The energy resolution of the SI-GaN based detector is determined to be ～ 8.6% at the deposited energy of 1.209 MeV with a charge collection efficiency of ～ 81.7%. At a higher temperature of 90 ℃, the measured full width at half maximum (FWHM) rises to 235 keV with no shift of energy peak position, which proves that the GaN detector has potential to work stably in high temperature environment. This study provides a possible route to fabricate the low cost GaN-based alpha particle detector with reasonable performance.     

公共格栅像素CdZnTe探测器的能谱特性

使用同一块CdZnTe晶体设计制作了像素大小不等的4×4公共格栅像素CdZnTe探测器。通过能谱测定实验及权重势和电场仿真,研究了公共格栅像素CdZnTe探测器中的小像素效应和引导效应。结果表明:由于小像素效应较弱,较大的像素不能有效消除"空穴拖尾",能谱特性较差;由于晶体内部以及像素和公共格栅间隙表层的电荷损失,较小的像素能谱特性也较差。在像素宽度为0.8 mm时,得到了对662keV的137Cs放射源的最佳能量分辨率3.80%和峰谷比5.65。适当增大公共格栅偏压可以引导电子向阳极像素运动,促进电荷的完全收集,改善探测器的能谱特性。过大的偏压则会造成像素和公共格栅间表面漏电流的增加,探测器的能谱特性也会恶化。在像素宽度为0.8mm时最佳偏压为-60V。     

LS301快中子探测器的效率刻度

主要介绍了利用252Cf标准裂变中子能谱刻度快脉冲LS301型液闪中子探测器的探测效率的实验方法和结果, 简要介绍了实验数据的处理过程, 得到了阈值分别为0.5, 0.7, 1.0和1.6 MeV, 以及中子能量在10 MeV以下的探测器效率, 并对测量结果进行了误差分析。同时为了检验实验结果的准确性, 将实验结果与理论计算结果进行比较, 两者在不确定度范围内符合得很好。Neutron detection efficiency of LS301 fast neutron detector was calibrated by measuring the neutron energy spectrum of 252Cf source, which has a standard fission neutron spectrum. A low mass, fast ionization chamber is used as the fission fragments detector in the time of flight(TOF) spectrometer and afforded the start signal of neutron flight. The stop signal was offered by the anode of LS301. A measured TOF spectrum was turned to the neutron energy spectrum which will be compared with the standard one. Consequently, the fast neutron detection efficiency of LS301 was obtained. Calibration procedures of experimental and data processing was given. Relative detection efficiencies were obtained separately for threshold settings of 0.5, 0.7, 1.0 and 1.6 MeV for neutron energies under 10 MeV. Experimental results accorded with theoretical efficiency curves which were calculated with the Monte Carlo code NEFF50.