Characteristics of CeCoIn5/Al/AlOx/Nb and CeCoIn5/Al/AlOx/Al tunnel junctions

We report characteristics of CeCoIn₅/Al/AlO_x/Nb and CeCoIn₅/Al/AlO_x/Al tunnel junctions fabricated on the (0 0 1) surface of CeCoIn₅ crystal platelets. The main result of this work is the observation of a low Josephson current (as compared with that expected from the Ambegaokar–Baratoff formula), which is consistent with idea that the order parameter in the heavy-fermion superconductor CeCoIn₅ has unconventional pairing symmetry.     

Properties of superconducting Nb/Al/Nb/Al?AlOx?Al?AlOx?Al/Nb/Al/Nb tunnel junctions

Modified geometry (MG) devices, Nb/Al/Nb/Al−AlO_x−Al−AlO_x−Al/Nb/Al/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/Al−AlO_x−Al−AlO_x−Al/Nb devices. The enhancement of the critical temperature in the Al film is found to be weaker for the MG devices as compared with the BG devices at temperatures nearT=4.2 K but stronger at lowT. Indication of an enhancement of dc Josephson critical current density,j _c , at bias voltageV≠0 as compared withj _c (V=0) has been observed in the MG devices for the first time.     

Control Al/Mg intermetallic compound formation during ultrasonic-assisted soldering Mg to Al

To prevent the formation of Al/Mg intermetallic compounds (IMCs) of Al₃Mg₂ and Al₁₂Mg₁₇, dissimilar Al/Mg were ultrasonic-assisted soldered using Sn-based filler metals. A new IMC of Mg₂Sn formed in the soldered joints during this process and it was prone to crack at large thickness. The thickness of Mg₂Sn was reduced to 22 μm at 285 °C when using Sn-3Cu as the filler metal. Cracks were still observed inside the blocky Mg₂Sn. The thickness of Mg₂Sn was significantly reduced when using Sn-9Zn as the filler metal. A 17 μm Mg₂Sn layer without crack was obtained at a temperature of 200 °C, ultrasonic power of Mode I, and ultrasonic time of 2 s. The shear strengths of the joints using Sn-9Zn was much higher than those using Sn-3Cu because of the thinner Mg₂Sn layer in the former joints. Sn whiskers were prevented by using Sn-9Zn. A cavitation model during ultrasonic assisted soldering was proposed.     

Nd0.7Sr0.3MnO3陶瓷EPIR效应的起源

用两线法和四线法对球磨合成后热处理的Nd_0.7Sr_0.3MnO₃陶瓷样品的电脉冲诱导电阻转变(EPIR)效应进行了测试.结果表明:在Nd_0.7Sr_0.3MnO₃块体中用四线法测得的I-V曲线为非线性,说明Nd_0.7Sr_0.3MnO₃样品在晶(相)界处存在空间电荷层和界面电阻.但用四线法测量EPIR效应时,没有EPIR效应发生,表明晶(相)界处的空间电荷层和肖特基势垒不能产生EPIR效应;对同一样品采用直流两线法测量,其I-V曲线也为非线性,但却发生明显的EPIR效应.说明在Nd_0.7Sr_0.3MnO₃陶瓷中发现的EPIR效应起源于样品与电极之间的接触界面,块体内的晶(相)界处虽能产生相似I-V特性,但却不能发生EPIR效应. 关键词： 电脉冲诱导电阻转变(EPIR) 亚锰酸盐 空间电荷层 I-V非线性')" href="#">I-V非线性     

Effects of Ca/Al ratio and extrusion process on Mg–Al–Ca alloys to produce a high toughness in-situ composite

The microstructures and tensile properties of Mg–Al₂Ca–Mg₂Ca in situ composites (Mg–17Al–8Ca, Mg–14Al–11Ca and Mg–12.5Al–12.5Ca) with different Ca/Al ratios have been studied in both as-cast and extruded conditions. The results indicated that by increasing Ca/Al ratio, new Mg₂Ca intermetallic introduces to the Al₂Ca phase in eutectic structure. Computer-aided cooling curve analysis confirmed the formation of these phases during solidification. Extrusion process not only altered the size of large bulk Al₂Ca intermetallic, but also changed the size and morphology of intermetallics in eutectic structure considerably. The results showed that with increasing Ca/Al ratio, tensile properties of cast composites changes slightly, but significant enhancement is observed after extrusion process. The strength and elongation values of Mg–12.5Al–12.5Ca (Ca/Al = 1) alloy improved from 166 MPa and 2% in as-cast condition to 465 MPa and 12% in hot-extruded condition. The reason for the improved toughness may be attributed to the formation of finer and well-dispersed distribution of hard (Al₂Ca) and ductile (Mg₂Ca) phases. It was found that hot extrusion easily deforms ductile Mg₂Ca phase in comparison with Al₂Ca phase. In as-extruded condition, there are more very fine dimples than as-casted condition because extrusion process leads to formation of fragmented tiny particles and more uniformity distribution of Al₂Ca particles.     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

Magnetism in a UNi2/3Rh1/3Al single crystal

We report a magnetization, magnetostriction, electrical resistivity, specific heat and neutron scattering study of a UNi_2/3Rh_1/3Al single crystal, a solid solution of an antiferromagnet UNiAl and a ferromagnet URhAl. The huge uniaxial magnetic anisotropy confining the principal magnetic response to the c axis in the parent compounds persists also for the solid solution. The magnetization curve at 1.6 K has a pronounced S shape with an inflection at 12 T. The temperature dependence of magnetic susceptibility exhibits a maximum around 10 K and is magnetic history dependent at lower temperatures where the resistivity increases linearly with decreasing temperature. The low-temperature ρ(T) anomaly is removed in a magnetic field applied along c, which yields a large negative magnetoresistance amounting to m46 zin 14T (at 2 K). The C/T values exhibit a minimum around 12 K and below 8 K they become nearly constant (about 250 mJ mol^?1 K^?2), which is strongly affected by magnetic fields. Neutron scattering data confirm a non-magnetic ground state of UNi_2/3Rh_1/3Al. The bulk properties at low temperatures are tentatively attributed to the freezing of U magnetic moments with antiferromagnetic correlations. The additional intensities detected on top of nuclear reflections in neutron diffraction in a magnetic field applied along c are found to be proportional to the field-induced magnetization, which reflects field-induced ferromagnetic coupling of U magnetic moments. This scenario is corroborated also by finding low-temperature magnetostriction data that also scale with the square of magnetization.     

Preparation and characterization of the ZnO:Al/Fe65Co35/ZnO:Al multifunctional films

The ferromagnetic transparent conducting film is a multifunctional film which has high visible transmittance, low resistivity and room-temperature ferromagnetism, simultaneously. In this article, ferromagnetic transparent conducting ZnO:Al/Fe₆₅Co₃₅/ZnO:Al multilayer films were fabricated by inserting a middle magnetic Fe₆₅Co₃₅ layer into aluminum-doped zinc oxide (ZnO:Al) matrix using a magnetron sputtering apparatus at substrate temperature ranging from room temperature (RT) to 400^∘C. The total film thickness was about 400 nm and the middle Fe₆₅Co₃₅ alloy layer was 4 nm. The influences of substrate temperature (T _s ) on the structural, electrical, optical and magnetic properties of the multilayer films were systemically investigated. The results showed that the microstructure and performance of the composite multilayer films strongly depended on the substrate temperature. The present results also showed that the inserted middle Fe₆₅Co₃₅ alloy thin layer played an important role in providing the RT ferromagnetism and decreasing the resistivity of the multilayer films. Therefore, it is possible to obtain a multifunctional film material with the combination of good optical transparency, high electrical conductivity and RT ferromagnetism.     

Structural and optical characterization of Si-implanted Al0.18Ga0.82N

Both structural and optical activation studies of Si-implanted Al_0.18Ga_0.82N have been made as a function of anneal temperature by using the x-ray rocking curve measurements and photoluminescence (PL) and time-resolved PL (TRPL) measurements. The full width at half maximum values of both (002) and (102) direction $\omega$-rocking curves for the Si-implanted Al_0.18Ga_0.82N samples decrease as the anneal temperature increases from 1150 to 1250 ^°C. The peak widths of the rocking curves for the as-implanted sample are much broader than those for the Si-implanted and annealed samples, indicating the implantation damage recovery after high temperature anneal. With increasing anneal temperature, the PL peak intensity increases and the PL decay becomes slower. The increase of PL intensity and recombination rate is attributed to both an increase of Si-donor activation and lattice damage recovery. These PL and x-ray results are very consistent with the results of anneal temperature-dependent electrical activation study.     

First-principles calculations on Al/AlB2 interfaces

The AlB₂ (1 1 1) surfaces and Al (1 1 1)/AlB₂ (0 0 0 1) interface were studied by first-principles calculations to clarify the heterogeneous nucleation potential of α-Al grains on AlB₂ particles in purity aluminium and hypoeutectic Al-Si alloys. It is demonstrated that the AlB₂ (0 0 0 1) surface models with more than nine atomic layers exhibit bulk-like interior, wherein the interlayer relaxations localized within the top three layers are well converged. The outmost layer of AlB₂ free surface having a preference of metal atom termination is evidenced by surface energy calculations. With Al atoms continuing the natural stacking sequence of bulk AlB₂, Al-Al metallic bonds are formed across interface during the combination of Al atoms with Al-terminated AlB₂ surface. The calculated interfacial energy of the Al/AlB₂ interface is much larger than that between the α-Al and aluminium melts, elucidating the poor nucleation potency of α-Al grains on AlB₂ particles from thermodynamic considerations.     

Electrochemical behaviour of nano-sized spinel LiMn2O4 and LiAlxMn2−xO4 (x=Al: 0.00-0.40) synthesized via fumaric acid-assisted sol-gel synthesis for use in lithium rechargeable batteries

Pristine spinel LiMn₂O₄ and LiAl_xMn_2−xO₄ (x=Al: 0.00-0.40) with sub-micron sized particles have been synthesized using fumaric acid as chelating agent by sol-gel method. The synthesized samples were subjected to thermogravimetric analysis (TGA), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and cyclic voltammetry (CV) and galvanostatic cycling studies. The TGA curve of the gel shows several weight-loss regions stepwise amounting to 55% till 800 °C attributed to the decomposition of the precursors. Calcination to higher temperatures (800 °C) yields pure-phase spinel (LiAl_xMn_2−xO₄), as it is evident from the high-intensity XRD reflections matching to the standard pattern. SEM and TEM studies confirm that the synthesized grains are of uniform regular surface morphology. FT-IR studies show stretching and bending vibration bands of Li-O, Li-Al-Mn-O. LiAl_0.1Mn_1.90O₄ spinel was found to deliver discharge capacity of 139 mA h/g during the first cycle with columbic efficiency of 97%. LiAl_0.1Mn_1.90O₄ spinel exhibits the high cathodic peak current indicating better electrochemical performance. Low doping (x=0.1) of Al is found to be beneficial in stabilizing the spinel structure.     

Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices

Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO₂ dispersion in H₂O to construct p-Si/TiO₂/Al Schottky barrier diode (D1) and the other one with TiO₂ dispersion doped with zirconium to construct p-Si/TiO₂-Zr/Al diode (D2) by drop-casting method in the same conditions. Electrical properties of as-prepared diodes and effect of zirconium as a dopant were investigated. Current–voltage (I–V) characteristics of these devices were measured at ambient conditions. Some parameters including ideality factor (n), barrier height (Φ_B0), series resistance (Rs) and interface state density (Nss) were calculated from I–V behaviours of diodes. Structural comparisons were based on SEM and EDX measurements. Experimental results indicated that electrical parameters of p-Si/TiO₂/Al Schottky device were influenced by the zirconium dopant in TiO₂.     

The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755 N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25-350°C. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I-V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I-V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.     

Low-energy resonance strengths for proton capture on Mg and Al nuclei

Absolute strengths of selected low-energy resonances for proton captures on the nuclei ²⁴Mg, ²⁵Mg, ²⁶Mg and ²⁷Al have been determined. The experiments were carried out by measuring the number of resonant γ-rays, integrated over the yield curve, simultaneously with the number of Rutherford scattered protons. The method applied in the present work is independent of target stoichiometries and uniformities, stopping powers, beam straggling and current integration. The ratio of charged-particle and γ-ray detection efficiencies was measured by using the ¹⁹F(p,α₂γ)¹⁶O reaction at E_R=340 keV. A new set of reliable resonance strength standards at low bombarding energies is presented and our results are compared with previous work.     

Oxidation of Al single crystal surfaces by exposure to O2 and H2O

The initial stages of oxidation of Al single crystals are studied by soft X-ray photoemission spectroscopy at photon energies hv = 30 eV and 111.13 eV using synchroton radiation. Both the valence band region and the substrate Al 2p core levels are measured with high resolution to clarify the differences between (a) the geometrical effects at different surfaces, (100) and (110), and (b) between the oxidation by pure O₂ and H₂O. There is a well established but not very dramatic differences in the O 2p induced band between the two crystal surfaces when oxidizing with O₂. The Al 2p spectra reveal an initial state of oxidation with less O atoms per Al atom than in Al₂O₃ate disappears at higher exposures with O₂ while it is absent when oxidizing with H₂O. Only about 1/4 of the exposure with H₂O is needed to obtain the same coverage as with O₂.     

Investigation of glassy behaviour of flux grown Pb(Zn1/3Nb2/3)0.91Ti0.09O3 crystal

The glassy behaviour of flux grown single crystal of relaxor based lead zinc niobium titanate near its morphotropic phase boundary has been investigated. The frequency dependence of temperature at dielectric maxima (T′_m), which is governed by the production of polar nano-region at higher temperature, was analysed using different glass models and Power law. Various parameters like activation energy for relaxation, freezing temperature, relaxation frequency, etc. were determined after non-linear curve fitting. Further, the temperature dependence of dielectric constant, at temperatures much higher and lower than T_m, was analysed using two exponential functions to explain the degree of relaxation, production and freezing of polar regions, etc. Various other associated parameters are calculated by non-linear curve fitting and their significance has been explained.     

Theoretical and experimental investigation on structural and electronic properties of Al/O/Al,O-doped WS2

Effects of the doping atom (O, Al, and (Al, O)) on structural and electronic properties of the monolayer WS₂ have been studied by using first-principles calculations. Results show that the covalent character of W–S bonding has been enhanced after doping. Meanwhile, W–O, Al–S and W–S bonds of (Al, O) co-doped WS₂ monolayer have higher covalent character compared with O-doped and Al-doped WS₂ monolayer of this work. After doping with Al (or Al, O) atoms, Fermi level moves close to the valence band and the dopant atoms produce the defect energy levels, indicating that Al doped and (Al, O) co-doped WS₂ monolayer both have p-type conductivity. O-doped and (Al, O) co-doped WS₂ ultrathin films was prepared on Si substrates. Results of Raman spectra show the formation of the O-doped and (Al, O) co-doped WS₂ films. Moreover, compared with the pure WS₂, the approximate reduction of 0.43 eV and 0.46 eV for W 4f and S 2p in binding energy after (Al, O) co-doped shows that p-type doping of (Al, O) co-doped WS₂ has been verified.     

Electronic properties of arrayed K clusters in zeolite LTA with Si/Al = 1.5

Arrayed cationic K clusters including one 4s-electron in each cluster, i.e., K_m+1 ^m+, were incorporated into α-cages of zeolite LTA with Si/Al=1.5. Although no magnetic phase transition was observed regarding the temperature (T) dependence of magnetic susceptibilities originating from the 4s-electron spins (χ_spin) between 2 and 300 K, the χ_spin-T curve could be fitted by the sum of magnetic susceptibilities based on the Curie-Weiss law and Pauli paramagnetism. A possible explanation of this behavior is the existence of a narrow energy band formed out of 1s-cluster orbitals of arrayed K clusters, and the existence of a finite density of state at the Fermi energy.     

Xenon-beam-induced atomic transport through Cr/Al and Cr2N/Al interfaces

Cr layers (60–75 nm) on Al substrates and Cr₂N layers (40–120 nm) on Al+3 wt.% Mg substrates were irradiated at 80 K and 300 K with 150–900 keV Xe-ions. The ion-beam-induced interface mixing was analyzed by means of Rutherford Backscattering Spectrometry (RBS). Both systems exhibit fairly small mixing rates, with those of Cr/Al being enhanced at 300 K target temperature, due to radiation-enhanced diffusion. The observed interface broadening is compared with predictions of ballistic and thermal spike mixing models. The low-temperature mixing rates in the system Cr/Al are underestimated by the ballistic model, but are rather well reproduced by local spike models. Mixing in the Cr₂N/Al system at both temperatures, on the other hand, seems to be rather well described by the ballistic model.     

Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures

The temperature dependence of capacitance–voltage (C–V) and conductance–voltage (G/w–V) characteristics of Al/HfO₂/p-Si metal-oxide-semiconductor (MOS) device has been investigated by considering the effect of series resistance (R_s) and interface state density (N_ss) over the temperature range of 300–400 K. The C–V and G/w–V characteristics confirm that the N_ss and R_s of the diode are important parameters that strongly influence the electric parameters in MOS device. It is found that in the presence of series resistance, the forward bias C–V plots exhibits a peak, and its position shifts towards lower voltages with increasing temperature. The density of N_ss, depending on the temperature, was determined from the (C–V) and (G/w–V) data using the Hill–Coleman Method. Also, the temperature dependence of dielectric properties at different fixed frequencies over the temperature range of 300–400 K was investigated. In addition, the electric modulus formalisms were employed to understand the relaxation mechanism of the Al/HfO₂/p-Si structure.