Characteristics of CeCoIn5/Al/AlOx/Nb and CeCoIn5/Al/AlOx/Al tunnel junctions

We report characteristics of CeCoIn₅/Al/AlO_x/Nb and CeCoIn₅/Al/AlO_x/Al tunnel junctions fabricated on the (0 0 1) surface of CeCoIn₅ crystal platelets. The main result of this work is the observation of a low Josephson current (as compared with that expected from the Ambegaokar–Baratoff formula), which is consistent with idea that the order parameter in the heavy-fermion superconductor CeCoIn₅ has unconventional pairing symmetry.     

Influences of Al doping concentration on structural,electrical and optical properties of Zn0.95Ni0.05O powders

Nanocrystalline Zn_0.95−xNi_0.05Al_xO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an auto-combustion method. X-ray diffraction measurements indicate that all Al-doped Zn_0.95Ni_0.05O samples have the pure wurtzite structure. Transmission electron microscope analyses show that the as-synthesized powders are of the size 40–45 nm. High-resolution transmission electron microscope, energy dispersive spectrometer and X-ray photoemission spectroscope analyses indicate that Ni²⁺ and Al³⁺ uniformly substitute Zn²⁺ in the wurtzite structure without forming any secondary phases. The Al doping concentration dependences of cell parameters (a and c), resistance and the ratio of green emission to UV emission have the similar trends.     

A very simple method of constructing efficient inverted top-emitting organic light-emitting diode based on Ag/Al bilayer reflective cathode

A comparative study on top-emitting organic light-emitting diodes (TOLEDs) with normal and inverted structures is briefly investigated. In comparison with the normal TOLED having Ag reflective anode, the inverted device with monolayer Al reflective cathode shows low efficiency as a result of lower reflectance of Al and inferior electron injection. Using Ag/Al bilayer reflective cathode is demonstrated to be a simple and effective method of enhancing efficiency in inverted TOLED. With tris(8-hydroquinoline) aluminum (Alq₃) as emitter the luminous efficiency reaches 5.9±0.6 cd/A, which is much higher than those of the corresponding normal TOLED (～5.1 cd/A) and inverted TOLED with monolayer Al reflective cathode (～4 cd/A). The improved performance is attributed to the enhanced reflectance and significant microcavity effect. The electron-injection barrier height of ～0.1 eV from Al to Alq₃ via an ultrathin LiF is estimated in the tunneling process for both normal and inverted devices.     

The interaction between vapor-deposited Al atoms and methylester-terminated self-assembled monolayers studied by time-of-flight secondary ion mass spectrometry,X-ray photoelectron spectroscopy and infrared reflectance spectroscopy

The deposition of 2 Å of Al metal onto a monolayer of methylester-terminated alkanethiolate (HS(CH₂)₁₅CO₂CH₃) self-assembled on polycrystalline Au(111) was studied using time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray photoelectron spectroscopy (XPS) and infrared reflectance spectroscopy (IRS). The deposited Al was found to be highly reactive with the oxygen atoms in the self-assembled monolayer terminal functional group. No reactivity between Al and the methylene backbone of the monolayer was observed, nor was any Al observed at the monolayer/Au interface. However, the deposition of Al does induce some chain disordering.     

Infrared broadband emission of bismuth–thulium co-doped lanthanum–aluminum–silica glasses

The Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ (SAL) glasses, which exhibited a broadband near-infrared (NIR) emission was investigated by the optical absorption and photoluminescence spectra. The super broadband near-infrared emission from 1000 to 2100 nm, which covered the whole O, E, S, C and L bands, was observed in the Bi–Tm co-doped samples, as a result of the overlap of the Bi-related emission band (centered at 1270 nm) and the emission from Tm^{3+ 3}H₄→³F₄ transition (1440 nm) as well as Tm^{3+ 3}F₄→³H₆ transition (1800 nm). Relative luminescence intensity at 1270, 1440 and 1800 nm wavelength varied depending on the mixing ratio of Bi and Tm and the full-width at half-maximum (FWHM) extending from 1000 to 1600 nm could be 400 nm. These results indicated that Bi–Tm co-doped SiO₂–Al₂O₃–La₂O₃ glasses could provide potential applications in tunable lasers as well as the broadband optical amplifiers in WDM system.     

Near-infrared broadband luminescence and energy transfer in Bi–Tm–Er co-doped lanthanum aluminosilicate glasses

The Bi–Tm–Er co-doped SiO₂–Al₂O₃–La₂O₃ (SAL) glasses, which exhibited a broadband near-infrared (NIR) emission, were investigated by the optical absorption and photoluminescence spectra. A super broadband NIR emission extending from 0.95 to 1.6 μm with a full-width at half-maximum (FWHM) of 430 nm which covered the whole O, E, S, C and L bands, was observed in Bi–Tm–Er co-doped samples under 808 nm excitation, as a result of the overlap of the Bi-related emission band (centered at 1270 nm) and the emission from Tm^{3+ 3}H₄→³F₄ transition (1450 nm) as well as Er^{3+ 4}I_13/2→⁴I_15/2 transition (1545 nm). In addition, a super broadband emission with amplitude relatively flat from 0.95 to 2.1 μm has been observed. The possible energy transfer between Bi-related centers, Tm³⁺ ions and Er³⁺ ions was proposed.     

The WO3/WS2 nanostructures: Preparation,characterization and optical absorption properties

The WO₃/WS₂ nanostructures were successfully prepared using a two-step hydrothermal/gas phase method. The physical properties of the nanostructures were characterized using XRD, SEM, TEM, UV–visible spectroscopy. The WO₃/WS₂ nanostructures obtained were coexistence of WO₃ and WS₂ in the same particle. The WO₃/WS₂ nanostructures contained a wide and intensive absorption in the UV–visible light region of 245–750 nm, which showed that the WO₃/WS₂ nanostructures may have a potential application as an UV–visible photocatalyst.     

Influence of thickness of functional layer on performance of organic salt-doped OLED with ITO/PVK:PBD:TBAPF6/Al structure

The effect of thickness of functional layer on the electrical and electroluminescence (EL) properties of single-layer OLED with ITO/PVK:PBD:TBAPF₆/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule, tetrabutylammonium hexafluorophosphate (TBAPF₆) as organic salt dopant and aluminium (Al) as cathode. A unique transition phenomenon at high bias voltage in the devices was observed and the transition was reversible. The transition voltage and turn on voltage decreased with the decrease of functional layer thickness. The turn on voltage was approximately 5.5 V and 6.5 V for 55-nm-thick and 95-nm-thick devices, respectively. However, the current efficiency of 95-nm-thick device was higher than the 55-nm-thick device. More interestingly, the Commission Internationale d’Eclairage (C.I.E.) coordinates of EL spectra of 95-nm-thick device at bias voltage ranging from 7 V to 13 V located in the white light region even without any dye doping. The PL and EL spectra were found completely different. PBD electromer was proposed to dominate the EL spectrum, but the contribution from PVK–PBD electroplex cannot be completely ruled out.     

A novel optical property induced by MO,S vacancy and V-doped in monolayer MoS2

The electronic structure and optical properties of Mo, S vacancy and V doping in MoS₂ monolayer will be investigated through first-principles calculations based on the density functional theory. The results indicate that the MoS₂ with Mo, S vacancy and V doping (Mo₁₄VS₃₂, Mo₁₅VS₃₁ and Mo₁₄VS₃₁) will gain the property of magnetic semiconductor with the magnetic moment of 1 μB, 1 μB and 0.95 μB, respectively. The optical properties of these V-doped and vacancy defect structures all reflect the phenomenon of red shift. The absorption edge of pure monolayer molybdenum disulfide is 0.8 eV, whereas the absorption edges of Mo₁₄VS₃₂, Mo₁₅VS₃₁ and Mo₁₄VS₃₁ become 0 eV, 0.2 eV and 0.16 eV, respectively. As a potential material, MoS₂ is widely used in many fields such as the production of optoelectronic devices, military devices and civil devices.     

Ultra thin Al film on the W(110) surface

We have investigated the surface structure of the Al/W(110) surface using low energy electron diffraction (LEED) and low energy ion scattering spectroscopy (ISS). We observe a p(2 × 1) double domain LEED image for the 0.5 ML Al/W(110) surface at annealing temperature 850 °C. We found that 0.5 ML Al atoms cover on the W(110) surface uniformly but do not form 3 or 2-dimensional islands. We also measured the Al adsorption site at the Al/W(110)-p(2 × 1) surface using ISS. We found that Al atoms adsorbed at the center of the bridge site. The height of the adsorbed Al atoms is determined to be 2.18 ± 0.15 Å above the W surface layer.     

Microstructure of multilayer interface in an Al matrix composite reinforced by TiNi fiber

A multilayer interface was formed in the Al matrix composite which was reinforced by 30% volume fraction of TiNi fiber. The composite was fabricated by pressure infiltration process and the interface between the TiNi fiber and Al matrix was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). When the TiNi fiber was pre-oxidized in the air at 773 K for 1 h, three layers have been found and characterized in the interface: TiNi–B₂ layer near the TiNi fiber, Ti–Al compound layer with Ti and granular TiO₂ near the Al matrix, and Ti–Ni compound layer between TiNi–B₂ and Ti–Al compound layers. The effect of the multilayer interface on the mechanical properties of the composite was also discussed. The result showed that the uniaxial tensile strength of the composite at room temperature was 318 MPa, which was very close to the theoretical calculation value of 326 MPa. Moreover, the composite with good ductility exhibited a typical ductile-fracture pattern.     

Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes

In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances: same InAs-rich SL structure with different active zone thicknesses (from 0.5 μm to 4 μm) and different active zone doping (n-type versus p-type), same 1 μm thick p-type active zone doping with different SL designs (InAs-rich versus GaSb-rich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4 μm active zone thickness, showing a QE that reaches 61% at λ = 2 μm and 0 V bias voltage.     

Critical current density in MgB2 bulk samples after co-doping with nano-SiC and poly zinc acrylate complexes

The co-doped MgB₂ bulk samples have been synthesized using an in situ reaction processing. The additives is 8 wt.% SiC nano powders and 10 wt.% [(CH₂CHCOO)₂Zn]_n poly zinc acrylate complexes (PZA). A systematic study was performed on samples doped with SiC or PZA and samples co-doped with both of them. The effects of doping and co-doping on phase formation, microstructure, and the variation of lattice parameters were studied. The amount of substituted carbon, the critical temperature (T_c) and the critical current density (J_c) were determined. The calculated lattice parameters show the decrease of the a-axis, while no obvious change was detected for c-axis parameter in co-doped samples. This indicates that the carbon was substituted by boron in MgB₂. The amount of substituted carbon for the co-doped sample shows an enhancement compared to that of the both single doped samples. The co-doped samples perform the highest J_c values, which reaches 3.3 × 10⁴ A/cm² at 5 K and 7 T. It is shown that co-doping with SiC and organic compound is an effective way to further improve the superconducting properties of MgB₂.     

Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

Al-doped zinc oxide (AZO) transparent conductive films were prepared on a glass substrate using a magnetron sputtering system with a pure zinc oxide (ZnO) target and a pure Al target sputtered using radio frequency (RF) power. The RF power was set at 100 W for the ZnO target and varied from 20 to 150 W for the Al target. The morphology of the thin films was examined by field-emission scanning electron microscope (FE-SEM), and their composition was analyzed by the equipped energy-dispersive X-ray spectroscopy (EDS). The cross section of the films determined through FE-SEM indicated that their thickness was around 650 nm. EDS analysis revealed that the Al-dopant concentration of the AZO films increased in the following order: 0.85 at.% (20 W) < 1.60 at.% (40 W) < 3.52 at.% (100 W) < 4.34 at.% (150 W). Analysis of the films using X-ray diffractometer (XRD) indicated that all films had a wurtzite structure with a texture of (0 0 2). High-resolution transmission electron microscopy (HRTEM) revealed a number of defects in the films, such as stacking faults and dislocations. Ultraviolet photoelectron spectroscopy (UPS) was used to estimate the optical energy gap (E_g) for the AZO thin films. The energy gap increases from 3.39 to 3.58 eV as the RF power applied to the Al target increase. The electrical resistivity of the films decreased from 3.43 × 10^?2 Ω cm to 3.29 × 10^?3 Ω cm as the RF power increased from 20 to 150 W when a four-point probe was used to investigate. Atomic force microscope (AFM) revealed that the surface roughness of the films increased with increasing RF power. The average optical transmittance of the films was determined by UV–visible spectrometer. The films are suitable for use as transparent conductive oxide films in the optoelectronic industry. A decrease in the electrical resistivity of the film with increasing Al-dopant concentration was ascribed to an increase in the carrier concentration and density of stacking faults in the films.     

Epitaxial alloyed films out of the bulk stability domain: Surface structure and composition of Ni3Al and NiAl films on a stepped Ni(1 1 1) surface

We have studied by Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED) and Auger Electron Spectroscopy (AES) Ni–Al alloyed layers formed by annealing, around 780 K, Al deposits on a stepped Ni(1 1 1) surface. The surface structure and composition of the thin epitaxial Ni₃Al and NiAl films, obtained respectively below and above a critical Al initial coverage θ_c, differ markedly from those of corresponding bulk alloys.The Ni₃Al ordered films form in a concentration range larger than the stability domain of the L1₂ Ni₃Al phase. The NiAl films present a marked distortion with respect to the lattice unit cell of the B2 NiAl phase, which slowly decreases when the film thickness increases.It also appears that the value of θ_c depends on the morphology of the Ni(1 1 1) substrate, increasing from θ_c = 4.5 ML for a flat surface to θ_c = 10 ML for a surface with a miscut of 0.4°. This could be directly related to the presence of steps, which favour Ni–Al interdiffusion.     

Surface reactions of TiCl4 and Al(CH3)3 on GaAs(100) during the first half-cycle of atomic layer deposition

GaAs(100) was exposed to pulses of trimethylaluminum (TMA, Al(CH₃)₃) and titanium tetrachloride (TiCl₄) to mimic the first half-cycle of atomic layer deposition (ALD). Both precursors removed the 9.0 ± 1.6 Å-thick mixed oxide consisting primarily of As₂O₃ with a small Ga₂O component that was left on the surface after aqueous HF treatment and vacuum annealing. In its place, TMA deposited an Al₂O₃ layer, but TiCl₄ exposure left Cl atoms adsorbed to an elemental As layer. This suggests that oxygen was removed by the formation of a volatile oxychloride species. A small TiO₂ coverage of approximately 0.04 monolayer remained on the surface for deposition temperatures of 89 °C to 135 °C, but no TiO₂ was present from 170 °C to 230 °C. The adsorbed Cl layer chemically passivated the surface at these temperatures and blocked TiO₂ deposition even after 50 full ALD cycles of TiCl₄ and water vapor. The Cl and As layers desorbed simultaneously at higher temperature producing peaks in the temperature programmed desorption spectrum in the range 237–297 °C. This allowed TiO₂ deposition at 300 °C in single TiCl₄ pulse experiments. On the native oxide-covered surface where there was a higher proportional Ga oxide composition, TiCl₄ exposure deposited TiO₂.     

One step ultrafast mechanosynthesis of nanocrystalline cubic Ti0.9Al0.1B and its microstructure evolution

Nanocrystalline single phase cubic Ti_0.9Al_0.1B has been prepared at room temperature in a minimum duration of 4 h by mechanical alloying the stoichiometric mixture of Ti, Al and B powders in a high energy planetary ball mill under argon atmosphere. The Rietveld's structure refinement of X-ray diffraction data reveals that cubic Ti–Al–B phase is initiated just after 1 h of milling and at the same time α-Ti (hcp) phase partially transforms to metastable β-Ti (bcc) phase. In the course of milling, ordered Ti–Al–B lattice gradually transforms to a distorted state and the degree of distortion increases with milling time up to 15 h. The formation of cubic Ti_0.9Al_0.1B is also confirmed from the selected area electron diffraction (SAED) pattern. Microstructure characterization by high resolution transmission electron microscopy (HRTEM) reveals that Ti–Al–B nanoparticles are isotropic in nature with average particle size ~4.5 nm and is in good agreement with the value obtained from the Rietveld analysis of X-ray diffraction data.     

Feasibility study of thin film Al/SnOx/n-Si gate stack for gamma radiation dosimetry

MOS (Al/SnO_x/n-Si) structure is fabricated by thin film deposition technique for gamma radiation dosimetry. A cumulative gamma dose of 480 Gy was given to the devices in steps of 120 Gy each at the dose-rate of 2 Gy/min. Forward bias I–V characteristics and C–V characteristics of the gamma irradiated devices have shown the changes in the current and capacitance values, respectively with gamma irradiation dose. This structure in future will be useful for personal and accidental radiation dosimetry.     

Sound insulation property of Al–Si closed-cell aluminum foam sandwich panels

Al–Si closed-cell aluminum foam sandwich panels (1240 mm × 1100 mm) of different thicknesses and different densities were prepared by molten body transitional foaming process in Northeastern University. The experiments were carried out to investigate the sound insulation property of Al–Si closed-cell aluminum foam sandwich panels of different thicknesses and different densities under different frequencies (100–4000 Hz). Results show that sound reduction index (R) is small under low frequencies, large under high frequencies; thickness affects the sound insulation property of material obviously: when the thicknesses of Al–Si closed-cell aluminum foam sandwich panels are 12, 22, and 32 mm, the corresponding weighted sound reduction indices (R_W) are 26.3, 32.2, and 34.6 dB, respectively, the rising trend tempered; the increase of density of Al–Si closed-cell aluminum foam can also increase the sound insulation property: when the densities of aluminum foam are 0.31, 0.51, and 0.67 g/cm³, the corresponding weighted sound reduction indices (R_W) are 28.9, 34.3, and 34.6 dB, the increasing value mitigating.     

Thermochromic properties of W-doped VO2 thin films deposited by aqueous sol-gel method for adaptive infrared stealth application

The W doped VO₂ thin films with various W contents were successfully deposited by aqueous sol-gel method followed by a post annealing process. The derived thin films were characterized by X-ray diffraction, Raman spectra, scanning electron microscopy and atomic force microscopy. Besides, the resistance-temperature relationship and infrared emissivity in the waveband 7.5–14 μm were analyzed, and the effects of W doping on the thermochromic properties of VO₂ thin films were studied. The results show that W atoms enter the crystal lattice of VO₂ and the transition temperature decreases gradually with increasing doping amount of W. The emissivity of VO₂-W-4% thin films has dropped to 0.4 when its real temperature is above 30 °C. The thermal infrared images were also examined under different temperature by thermal imager. The results indicate that the temperature under which W doped VO₂ thin films begin to have lower emissivity decreases gradually with increasing doping amount of W. W doped VO₂ thin films can control its infrared radiation intensity actively at a lower temperature level of 30 °C, which has great application prospects in the adaptive infrared stealth technology.