Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

三硝基甲苯起爆机理实验研究

 用单脉冲化学激波管实验方法,使用自由基清扫剂和对比速率,测定了邻位和对位硝基甲苯在高温下,裂解瞬间（500 μs） 的化学反应机理,并测定了化学反应速率常数。作为邻位硝基甲苯的同分异构体,对位硝基甲苯的主要裂解通道与其不同。通过实验发现了邻位硝基甲苯的裂解重要通道,测到它的产1氧-2氮-3,4-环丁二稀基异嚙唑（Anthranil） 在瞬间随温度变化生成和很快消失的过程。由此,测得这一化学性质极不稳定的产物的消失速率常数为：k(Anthranil)＝3.7×10¹⁵·exp(－25 800/T) s^-1。分析这一过程的机理,认为第一步是硝基甲苯的裂解,第二步是Anthranil的生成,第三步是Anthranil中的N－O键的断裂。     

Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor

Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and 621 nm corresponding to the electric dipole ^5 Do- ^7F2 transition of Eu^3＋ under 365 nm excitation, the reason is that Eu^3＋ substituting for Y^3＋ occupies the non-centrosymmetric position in the crystal structure of Ca3 Y2 （BO3）4. The excitation spectrum for 613 nm indicates that the phosphor can be effectively excited by ultraviolet （UV） （254 nm, 365nm and 400nm） and blue （470nm） light. The effect of Eu^3＋ concentration on the emission intensity of Ca3 Y2 （BO3）4 ：Eu^3＋ phosphor is measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The CIE colour coordinates of Ca3Y2 （BO3）4：Eu^3＋ phosphor is （0.639, 0.357） at 15mol% Eu^3＋.     

Improvement of Plasticity of Ti-Based Bulk Metallic Glasses by Addition of Nb

Ti-based bulk metallic glasses （Ti40Zr25Cu9NisBe18 ）100-x Nbx with x = 0 to 5 at. % are prepared by copper-mold casting. The glass formation ability is almost unchanged by addition of Nb. The compression plasticity is, however, apparently changed, from 3% at x = 0 to 13% at x = 3, about 330% increases at the strain rate of 1 × 10^-4 8^-1. The increment of the plasticity can be attributed to the segregation of Nb in the area of shear bands during the compression processing. An effective way to increase the plasticity of Ti-based bulk metallic glasses is thus proposed.     

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric mul- tilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous （ZrO2）0.5（SiO2）0.5 as the tunneling and blocking oxide layers, and ZrO2 nanocrystals as the trapping storage layer. Zr02 nanocrystals are precipitated from the phase separation of （ZrO2）0.5（SiO2）0.2 films annealed at 800℃, and isolated from each other within the amorphous （ZrO2）0.5（SiO2）0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10^13/cm2.     

凝聚炸药中超压爆轰的实验研究

 采用飞片碰撞技术，在TNT/RDX（40/60）炸药中获得了2.5倍于正常爆轰的最大超压值，得到了超压爆轰下爆轰产物物态方程p=Aρ^{k+A₁(p-p_J)}（p－爆压，单位GPa，ρ－密度，单位kg/m³，A=ρ_J/ρ^k_J，p_J=27.06 GPa，ρ_J=2.3×10³ kg/m³，k=2.77，A₁=2.7×10^-3 GPa^-1，下表J代表正常爆轰状态）。该方程还可以较好地描述超压爆轰产物的二次冲击状态。     

Neutral Higgs Effects on Rare Decay B→Xsl+l－ in the T2HDM

We calculate the new physics contributions to the branching ratios of the rare decays B→X_sl⁺l^－(l=e,μ) induced by neutral Higgs bosons loop diagrams in the top quark two-Higgs-doublet model (T2HDM). From the numerical calculations, we find that (a) the neutral Higgs boson's correction to B→X_sl⁺l^－ decays interferes constructively with its standard model counterpart, but small in magnitude; (b) the neutral Higgs contributions to the branching ratio of B→X_sl⁺l^－ decay can be neglected safely if their masses are larger than 100GeV and tanβ≤40.     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

Optical antsotropy in the plane parallel to the surface of obliquely evaporated gold films

An experimental study by means of a return-path type ellipsometer is described. The results can be explained qualitatively by assuming that the directions of the principal axes (X, Y, Z) are as follows: (1) With thinner (e.g. 70 Å) films, the Y-axis lies parallel to the intersection of the plane of incidence of the vapor beam and the film plane, the X-axis lying in the film plane. (2) With thicker (e.g. 210 Å) films, the Y-axis lies in the plane of incidence of the vapor beam making a certain angle with the film plane, the X-axis lying in the film plane.     

The Relation of Family and Extra Z0 Boson Number

The three family fermions can not be accommolated the Grand Unified Theories(GUT_s)if only one extra Z⁰ boson exists.The minimal GUT_s with three families should include two extra Z⁰ bosons which belong to the different broken scales.Georg's argument on heavy Dirac fermions has been realized.These Dirac fermions should not be bizarre.Frampton's SU(9) model should be essentially same as its SU(7) model.The difficulty of the proton decay may be resolved.     

High Resolution Mode-Selective Excitation by Adaptive Femtosecond Pulse Shaping

High resolution mode-selective excitation in the mixture of C6H6 （992 cm^-1） and C6D6 （945 cm^-1） is experimentally achieved by adaptive femtosecond pulse shaping based on the genetic algorithm （GA）, and second harmonic generation frequency-resolved optical gating （SHG-FROG） is adopted to characterize the original and optimal laser pulses, and its mechanism is experimentally validated by tailoring the frequency components of the pump pulses at the Fourier plane. It is indicated that two-pulse coherent mode-selective excitation of the Raman scattering mainly depends on the effective frequency components of the pump pulse related to specific molecular vibrational mode. The experimental results have attractive potential applications in the complicated molecular system.     

Structural Deformation of CO22+ in Intense Femtosecond Laser Fields

The angular distributions of CO^＋ from the dissociation of CO2^2＋ and CO2^＋ in intense femtosecond laser fields （45 fs, about 5 × 10^15 W/cm^2） are studied at a laser wavelength of 800nm based on the time-of-flight mass spectra of CO^＋ fragment ions. The experimental results show that structural deformation occurs in the charge state of CO2^2＋ and the CO^＋ maintains linear geometrical structure.     

Pure annihilation type decays B0→Ds- K2*+ and Bs→Da2 in perturbative QCD approach

We calculate the branching ratios of pure annihilation type decays B⁰→D_s^- K₂^*+ and B_s→Da₂ using the perturbative QCD approach based on k_T factorization. The branching ratios are predicted to be (60.6_{-16.5-10.4-2.1}^{+17.3+4.3+3.2} )× 10^-6 for B⁰→D_s^- K₂^*+, (1.1_-0.4-0.2-0.1^+0.4+0.1+0.1)×10^-6 for B_s→D⁰a₂⁰ and (2.3_-0.8-0.4-0.1^+0.8+0.2+0.1)×10^-6 for B_s→D^-a₂⁺. They are large enough to be measured in the ongoing experiment. Due to the shortage of contributions from penguin operators, there are no direct CP asymmetries for these decays in the Standard Model. We also derive simple relations among these decay channels to reduce theoretical uncertainties for the experiments to test the accuracy of theory and search of new physics signal.     

Branching ratio of rare decay B0(Bs)→γνν

The three-body decay B⁰(B_s)→γνν can occur via penguin and box diagrams in the Standard Model (SM). These channels are useful to determine the decay constant f_B (f_Bs) and B (B_s) meson wave function. Using the B meson wave function determined in hadronic B (B_s) decays, we calculate and get the branching ratio of order 10^－9 and 10^－8 for B⁰ and B_s decay, respectively. They agree with previous calculations.     

Ds（0^±） Meson Spectroscopy in Gaussian Sum Rules

Masses of the Ds（0^±） mesons are investigated from a view-point of ordinary light-heavy system in the framework of the Gaussian sum rules, which are worked out by means of the Laplacian transformation to the usual Borel sum rules. Using the standard input of QCD non-perturbative parameters, the corresponding mass spectra and couplings of the currents to the Ds（0^±） mesons are obtained. Our results are mDs（0-） = 1.968±0.016±0.003 GeV and mDs（0＋） = 2.320 ±0.014 ± 0.003 GeV, which are in good accordance with the experimental data, 1.969 GeV and 2.317 GeV.     

Comment on `Electronic Properties of Red P-Type Tl2S5 Single Crystals'

Recently, Gamal et al. [Chin. Phys. Lett. 22 (2005) 1530] reported the results of electrical conductivity, Hall effect and thermoelectric measurements on p-type Tl₂S₅ single crystals. From the experimental data for the temperature dependence of differential thermoelectric power, Gamal et al. determined thevalues of 2.66×10^-41kg and 2.50×10^-41kg, respectively, for the effective masses of electrons and holes in p-type Tl₂S₅, which are about ten orders of magnitude smaller than the free electron mass (9.11×10^-31kg). We argue that the anomalously small values obtained for the effective mass of chargecarriers in Tl₂S₅ have no physical significance.     

Vacuum Ultraviolet Excited Photoluminescence Properties of Novel Na3Y9O3（BO3）8：Tb^3＋ Phosphor

The novel vacuum ultraviolet （VUV） excited Na3 Y9O3 （BO3）8：Tb^3＋ （NYOB：Tb^3＋） green phosphor is prepared. Strong VUV photoluminescence and high quenching concentration of Tb^3＋ （20 wt%） are observed in NYOB： Tb^3＋ and the strong emission are correlated with the unique layer-type structure of NYOB. All the characteristic 4 f - 5d transitions of Tb^3＋ and the host absorption band in VUV region are identified in the excitation spectrum. Based on the results, the energy levels scheme of Tb^3＋ in NYOB：Tb^3＋ is first established. This newly developed NYOB：Tb^3＋ phosphor shows excellent optical properties when compared with the commercial Zn2SiO4：Mn^2＋ and would be a potential VUV-excited green phosphor.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

Accurate and rapid error estimation on global gravitational field from current GRACE and future GRACE Follow-On missions

Firstly, the new combined error model of cumulative geoid height influenced by four error sources, including the inter-satellite range-rate of an interferometric laser (K-band) ranging system, the orbital position and velocity of a global positioning system (GPS) receiver and non-conservative force of an accelerometer, is established from the perspectives of the power spectrum principle in physics using the semi-analytical approach. Secondly, the accuracy of the global gravitational field is accurately and rapidly estimated based on the combined error model; the cumulative geoid height error is 1.985× 10^-1~m at degree 120 based on GRACE Level 1B measured observation errors of the year 2007 published by the US Jet Propulsion Laboratory (JPL), and the cumulative geoid height error is 5.825× 10^ - 2~m at degree 360 using GRACE Follow-On orbital altitude 250~km and inter-satellite range 50 km. The matching relationship of accuracy indexes from GRACE Follow-On key payloads is brought forward, and the dependability of the combined error model is validated. Finally, the feasibility of high-accuracy and high-resolution global gravitational field estimation from GRACE Follow-On is demonstrated based on different satellite orbital altitudes.     

Fine-Structure Splittings of Nitrogen Isoelectronic Sequence： Competitions among Spin-Orbit Interactions, Breit Interactions and Electron Correlations

Using the multi-configuration Dirac-Fock self-consistent field method and the relativistic configuration interaction method with quantum-electrodynamics corrections performed by the GRASP code, we calculate the fine-structure energy levels of the ground-state configuration （1s^22s^22p^3） of the nitrogen isoelectronic sequence, according to the L-S coupling scheme with atomic number Z up to 22. Based on the calculated results, we elucidate the mechanism of the orderings of fine-structure energy levels of 2^ D3/2,5/2 and 2^P1/2,3/2 respectively, i.e. for 2^D3/2,5/2 orderings, the competition between the spin-orbit interactions and the Breit interactions; for 2^P1/2,3/2 orderings, the electron correlations, especially the electron correlations owing to the 2p^5 configuration interactions.