用高压显微光谱系统研究(Zn_(0.85)Cd_(0.15))S:Cu,Al磷光体在流体静压力下施主-受主对的发光

用金刚石对顶砧高压显微光谱系统在室温和1bar—66kbar的流体静压力范围内研究了(Zn_(0.85)Cd_(0.15))S:Cu,Al磷光体的发光峰位置和相对发光强度随压力而变化的规律。随着压力的增加,发射峰值波长迅速移向短波方向,而发射峰值对应的光子能量随压力增加的速率为4.7meV/kbar(38cm~(-1)/kbar)。这个值比该材料的吸收边随压力增加的速率要小。随着压力的增加,该磷光体的发光峰值相对强度急骤下降,当压力从常压升到66 kbar时,发光峰值相对强度下降到原值的6％。这些结果可以用Al~(3 )-Cu~的施主-受主对模型来解释。本文还估计施主(Al~(3 )和受主(Cu~ )的激活能之和随压力增加的速率为 3.7meV/kbar(30cm~(-1)/kbar)。     

激发功率、退火温度及Tm3+浓度对Tm3+/Er3+/Yb3+三掺YF3粉末上转换发光性质的影响

用水热法合成了Tm³⁺/Er³⁺/Yb³⁺三掺杂YF₃上转换发光粉末,并对其进行了结构和形貌表征.对上转换发射谱的研究表明,在相对低激发功率下,可以观察到比较明亮的近白色发光,且随着激发功率的增大,上转换发射强度迅速增大并达到饱和状态,继续增大激发功率,出现发光猝灭现象.退火温度对上转换发射强度的影响表明,随着退火温度的升高,Tm³⁺,Er³⁺的所有特征发射峰均相对增强.上转换发射谱随Tm³⁺浓度变化关系表明,在相对低Tm³⁺掺杂浓度下,Tm³⁺-Er³⁺相互作用占优势,Tm³⁺把能量传递给Er³⁺,Er³⁺发射相对增强;在相对高掺杂浓度下,Tm³⁺-Tm³⁺之间交叉弛豫过程占优势,Er³⁺发射相对减弱.从实验结果看出,该粉末的上转换发光非常丰富,从紫外到红外均有发射,是一种潜在的白色上转换发光及三维固体显示材料.     

Na4Ca3(AlO2)10∶Eu2+,Mn2+荧光粉的发光特性

采用高温固相法,制得一种新型荧光粉Na₄Ca₃(AlO₂)₁₀∶Eu²⁺,Mn²⁺。样品的结构和发光性质分别由X射线衍射谱和荧光光谱来表征。在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺的激发光谱中出现了Eu²⁺的f-d跃迁吸收带;在发射光谱中,出现蓝光发射,峰值位于441 nm。当在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺中掺杂Mn²⁺时,发生了Eu²⁺→Mn²⁺的能量传递,在542 nm处出现了Mn²⁺的发射峰。在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺,Mn²⁺中,随着Mn²⁺浓度的增加,Eu²⁺粒子的发射强度减弱,而Mn²⁺粒子的发射强度增强,且Eu²⁺离子发射的衰减时间缩短,同时色度由蓝光移向白光。     

压力对NH4IO3及其固溶体相变的影响

在流体静压力到10kbar范围内,采用DTA技术研究了压力对NH₄IO₃及其固溶体K_x(NH₄)_1-xIO₃的相变温度(T_c)的影响。实验结果表明,虽然固溶体的相变温度T_c随K⁺组分的增加而减小,但是dT_c/dP值却同K⁺组分无关。这意味着在压力下IO₃^-离子的伸长对T_c随压力增加起主要作用。 关键词：     

Na2CaSiO4∶RE3+(RE=Ce3+,Tb3+,Eu3+) 的制备及发光特性

采用高温固相法,合成了三价稀土离子(RE³⁺=Ce³⁺, Tb³⁺, Eu³⁺)掺杂的Na₂CaSiO₄(NCS)系列样品,并研究了其在紫外光激发下的发光特性。研究结果表明,Ce³⁺、Tb³⁺ 和Eu³⁺掺杂的NSC系列样品在紫外光源激发下,均呈现其特征发射,随着掺杂浓度的提高,发射强度逐渐增大。Ce³⁺、Tb³⁺和Eu³⁺的最佳摩尔分数分别为0.13、0.13和0.12,相应的色坐标分别计算为(0.17, 0.17)、(0.34, 0.58)和(0.66, 0.34),分别为很好的蓝光、绿光和红光。继续增加稀土离子的含量,发射强度降低。     

LiMAlF6(M=Ca,Sr)基质中Ce3+、Eu3+、Tb3+的光谱研究

合成了Ce³⁺、Eu³⁺、Tb³⁺激活的LiMAlF₆(M=Ca,Sr)磷光体,研究了它们的光谱特性.观察到稀土离子在LiCaAlF₆和LiSrAlF₆中的光谱十分相似.这与它们所处的晶场环境相同有关.发现Ce³⁺在此基质中有较弱的330nm发射,这一Ce³⁺的发光中心可用于作为材料质量的评价.     

准一维反铁磁体CsMnCl3·2D2O中激子的能量转移

在2—300K温度范围,研究了纯的及掺Mg²⁺,Ni²⁺和Co²⁺的准一维反铁磁体CsMnCl₃·2D₂O(CMC)中Mn²⁺离子的⁴T₁激子的能量转移动力学过程,发现在2—10K范围,激子的荧光强度和寿命随温度很快下降,较高浓度的杂质离子将进一步加快荧光的减弱和寿命的缩短。这种现象被归结为与磁相互作用和自旋有序相关联的多声子无辐射跃迁及施主—受主之间的能量转移。在更高的温度,能量转移速率增高,但由于仍然存在的自旋短程有序和Jahn-Teller效应,施主之间的能量迁移受到一定限制,出现非指数衰减过程。各种不同的杂质离子在某种程度上显示出不同的陷落作用和弛豫特性。 关键词：     

Eu3+掺杂的Sr2CeO4发光材料的光致发光研究

利用高温固相反应法制备了Eu³⁺掺杂的Sr₂CeO₄样品,并对其吸附水前后的光谱特性进行了研究.结果发现,对于刚制备的Sr_2-xEu_xCeO_4+x/2样品, 在Ce⁴⁺—O^2-的电荷迁移激发中,只有强激发带(～35700cm^-1)与Eu³⁺离子间存在能量传递,而弱激发带 (～29400cm^-1)只是引起Ce⁴⁺—O^2-的电荷迁移发射;在Sr_2-xEu_xCeO_4+x/2样品吸附水后,Eu³⁺的线状吸收跃迁强度显著增加, Ce⁴⁺—O^2-两个激发带均向Eu³⁺离子传递能量. Ce⁴⁺—O^2-强激发带通过交换作用向Eu³⁺离子传递能量,而弱激发带与Eu³⁺离子间的能量传递机理是非辐射多极子近场力的相互作用. 关键词： 2-xEu_xCeO_4+x/2')" href="#">Sr_2-xEu_xCeO_4+x/2 发光性质 能量传递 吸附水     

Eu2+激活的Ca3SiO5绿色荧光粉的制备和发光特性研究

研究了Eu²⁺激活的绿色发光材料Ca₃SiO₅的制备条件和发光性质. Eu²⁺中心形成主峰值为501 nm和次峰值为570 nm的特征宽带，两峰值叠加形成发射峰值为502nm的绿色发射光谱带. 利用这些光谱结果和Van Uitert 经验公式，确认Ca₃SiO₅:Eu²⁺中存在两种性质有差异的Eu²⁺发光中心，它们分别占据基质中八配位的Ca²⁺(Ⅰ)格位和四配位的Ca²⁺(Ⅱ)格位. 其激发光谱分布在250—450 nm的波长范围，峰值位于375 nm处，可以被InGaN管芯产生的350—410 nm辐射有效激发. 关键词： 发光 荧光粉 绿色荧光粉 3SiO₅')" href="#">Ca₃SiO₅ 2+')" href="#">Eu²⁺     

Ca2SiO4:Dy3+材料的制备及其发光特性

采用高温固相法制备了Ca₂SiO₄:Dy³⁺发光材料.在365nm紫外光激发下,测得Ca₂SiO₄:Dy³⁺材料的发射光谱为一多峰宽谱,主峰分别位于486nm,575nm和665nm处;监测575nm发射峰,测得材料的激发光谱为一多峰宽谱,主峰分别位于331nm,361nm,371nm,397nm,435nm,461nm和478nm处.研究了Dy³⁺掺杂浓度对Ca₂SiO₄:Dy³⁺材料发射光谱及发光强度的影响,结果显示,随Dy³⁺浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大,利用Judd-Ofelt理论解释了其原因;随Dy³⁺浓度的增大,Ca₂SiO₄:Dy³⁺材料发光强度先增大,在Dy³⁺浓度为4 mol%时到达峰值,而后减小,根据Dexter理论其浓度猝灭机理为电偶极-电偶极相互作用.研究了电荷补偿剂Li⁺,Na⁺和K⁺对Ca₂SiO₄:Dy³⁺材料发射光谱的影响,结果显示,不同电荷补偿剂下,随电荷补偿剂掺杂浓度的增大,Ca₂SiO₄:Dy³⁺材料发射光谱强度的演化趋势相同,即Ca₂SiO₄:Dy³⁺材料发射峰强度先增大后减小,但不同电荷补偿剂下,材料发射峰强度最大处对应的补偿剂浓度不同,对应Li⁺,Na⁺和K⁺时,浓度分别为4mol%,4mol%和3mol%. 关键词： 白光LED 2SiO₄:Dy³⁺')" href="#">Ca₂SiO₄:Dy³⁺ 发光特性 电荷补偿     

流体静压力下快离子导体Rb4Cu16I7Cl13离子电导的研究

在流体静压力为0.5—11.6kbar,温度-80—80℃范围内,测量了Rb₄Cu₁₆I₇Cl₁₃多晶粉末“松散”样品和“致密”样品的离子电导。“松散”样品电导与压力的关系表明,在4.0—5.0kbar附近,电导存在极大值;“致密”样品电导随压力单调下降。在一定压力下,“致密”样品电导率随温度变化的趋势与常压结果相同,压力对Rb₄Cu₁₆I₇Cl_关键词：     

Influence of high hydrostatic pressure on Eu-luminescence in KMgF3:Eu crystal

Spectroscopic investigations are presented of KMgF₃:Eu²⁺ crystal under high hydrostatic pressure from ambient to 310 kbar. The sample was excited by 30 ps pulses generated by optical parametric generator (OPG) system with wavelength controlled between 210 and 325 nm. The Grüneisen parameters of individual phonons are obtained from the pressure shift of the Eu²⁺ emission related to the ⁶P_7/2→⁸S_7/2 transition accompanied by phonon sideband. The luminescence decays exponentially for the pressure below 135 kbar with lifetime of 3.30 ms and slightly nonexponential above 135 kbar, while the average decay time is nearly independent of the pressure. The results obtained for KMgF₃:Eu²⁺ are compared with those for LiBaF₃:Eu²⁺ in which the ⁶P_7/2→⁸S_7/2 emission is replaced by the broadband emission of the 4f⁶5d¹→4f⁷ transition at high hydrostatic pressure.     

应变纤锌矿GaN/A10.15Ga0.85N柱形量子点的光学性质:流体静压力效应

在有效质量近似下,考虑强的内建电场和应变对材料参量的影响,变分研究了流体静压力对有限高势垒应变纤锌矿GaN/Al_0.15Ga_0.85N柱形量子点中重空穴激子的结合能、发光波长和电子空穴复合率的影响.数值结果表明,激子结合能和电子空穴复合率随流体静压力的增大而近线性增大,发光波长随流体静压力的增大而单调减小.在量子点尺寸较小的情况下,流体静压力对激子结合能和电子空穴复合率的影响更明显.由于应变效应,为了获得有效的电子-空穴复合过程,GaN量子点的高度必须小于5.5 nm.     

The excitonic absorption of CdS under pressure

Abstract

We have investigated the pressure dependence of the absorption edge of tlie E_A-E_B- and the E_C-excitons of 1pi thick CtlS(hex) crystal slabs. We obtaiurd dE_Θ/dP =dE_c/dP = 47±3 meV/GPa for T=300K and dE_A/dP= dE_B/dP = 43±3 meV/GPa for T=78K. With tliese values we were able to determine the crystal-field splitting (68f4 nieV) aid the spin-orbit splitting (26±2 meV). The resulting pressure shifts of tlie rxcitonic energies were in agreement witli a κ · p-calculation of tlie transition energies using tlie perturbation niatrix of G.E. Pikus for Δ_so ? Δ_c. The refractive Index n‖c was iiieasured for T=300K up to 2.2 GPa and described by Marples Model.     

Luminescence of Ca(NbO3)2:Pr at ambient and high hydrostatic pressure

In this contribution, photoluminescence and time-resolved photoluminescence spectra of Ca(NbO₃)₂ doped with Pr³⁺ obtained at high hydrostatic pressure up to 72 kbar applied in a diamond anvil cell are presented. At ambient conditions, the emission spectrum obtained in the time interval 0-1 μs is dominated by spin-allowed transitions from the ³P₀ state. On the other hand, transitions from ¹D₂, characterized by a decay time equal to 30 μs dominate the steady-state luminescence.At pressures lower than 60 kbar, the continuous wave emission spectrum consists of sharp lines peaking between 600 and 625 nm, related to the ¹D₂→³H₄ transition and three lines at 500, 550 and 650 nm related to emission transitions originating from the ³P₀ level of Pr³⁺. The emission from the ¹D₂ excited state depends weakly on the pressure. Its decay time decreases from 33 μs at ambient pressure to less than 22 μs at 68 kbar. On the other hand, the ³P₀ emission is strongly pressure dependent. At pressures of 60 kbar and higher, the Pr³⁺ emission intensity from the ³P₀ state decreases. This is accompanied by a strong shortening of the luminescence decay time.The observed pressure quenching of the f-f emission transitions and the concomitant lifetime shortening have been attributed to increasing crossover from the ³P₀ state of Pr³⁺ to a Pr³⁺-trapped exciton state.     

用高压显微光谱系统测量流体静压力对非晶态As2S3光学吸收边的影响

用金刚石对顶砧高压显微光谱系统在0—66kbar的流体静压力范围内测量了a-As₂S₃的光学吸收达随压力的移动特性。发现a-As₂S₃的光学吸收边随压力的增加而迅速红移。在计算机上用最小二乘法对实验点进行了拟合,结果得出吸收边和压力之间的关系为:E_g(P)=E_g(0)-1.31×10^-3P-3.91×10^-4P²+4.04×10^-6P³值得注意的是|dE_g/dP|和压力之间的关系经历了一个先是增大,然后再减小以至于趋于饱和的过程。这和Weinstein等人先前的实验结果是有所不同的。 关键词：     

Photoluminescence of InGaAs/GaAs strained-layer quantum well structures under high pressure

Abstract

Measurements of the photoluminescence (PL) of strained In_0.2Ga_0.8As/GaAs and In_0.15Ga_0.85As/GaAs quantum well structures together with the PL from bulk GaAs, in a diamond anvil cell show that the pressure coefficient of the ground confined state in the wells depends upon well width (L_Z). In the thinnest wells, the coefficient is closer to that of the bulk GaAs (10.7 meV/kbar), as expected. However, in the widest wells the coefficients tend to values (9.5meV/kbar for the 15% alloy and 9.1meV/kbar for the 20% alloy) that are significantly lower than the pressure coefficient of unstrained In_0.53Ga_0.47As (10.9meV/kbar). It is found that the low pressure coefficients can not be explained by the change in uniaxial stress with pressure due to a difference in bulk moduli between the barrier and well.     

GaAs1-xPx:N束缚激子的压力行为

本文研究了77K温度下GaAs_0.15P_0.85:N样品的静压光致发光。在P>10kbar时,可清楚地观察到NN₁的发光。同时,观察到压力下N_x带发光猝灭及谱带窄化现象。结果表明,压力效应明显地加强了N_x→NN₁的热助能量转移过程。对N_x能级和NN₁能级的压力行为进行了分析和拟合计算,得到相应能级的压力系数及波函数中各能谷的有关参数。 关键词：     

DX-Like behavior of Se-impurity centers in gasb under hydrostatic pressure

Abstract

Hall coefficient (R_H) and electrical resistivity measurements have been performed as a function of temperature (between 77 K and 300 K) and under hydrostatic pressures (up to 15 kbar) on a set of Se-doped GaSb samples with impurity concentrations in the range 8×10¹⁷ cm^?3 - 1×10¹⁸ cm^?3. With increasing pressure at 300 K, the electrons are strongly trapped into a resonant impurity level. The pressure induced occupation of this level leads to time-dependent effects at T<120 K. The activated thermal electron emission over a potential barrier E<sb>B = 300×30 meV gives clear evidence for a large lattice relaxation around the impurity centers characteristic for DX-like behavior.