| GaAs1-xPx:N束缚激子的压力行为 |
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| 引用本文： | 张勇,余畸,郑健生,颜炳章,吴伯僖,李国华,汪兆平,韩和相.GaAs1-xPx:N束缚激子的压力行为[J].物理学报,1988,37(12):1925-1931. |
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| 作者姓名： | 张勇 余畸 郑健生 颜炳章 吴伯僖 李国华 汪兆平 韩和相 |
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| 作者单位： | (1)厦门大学物理学系; (2)中国科学院半导体研究所 |
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| 摘 要： | 本文研究了77K温度下GaAs0.15P0.85:N样品的静压光致发光。在P>10kbar时,可清楚地观察到NN1的发光。同时,观察到压力下Nx带发光猝灭及谱带窄化现象。结果表明,压力效应明显地加强了Nx→NN1的热助能量转移过程。对Nx能级和NN1能级的压力行为进行了分析和拟合计算,得到相应能级的压力系数及波函数中各能谷的有关参数。
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| 收稿时间： | 2/8/1988 12:00:00 AM |
PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :N |
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| ZHANG YONG,YU QI,ZHENG JIAN-SHENG,YAN BING-ZHANG,WU BO-XI,LI GUO-HUA,WANG ZHAO-PING and HAN HE-XIANG.PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :N[J].Acta Physica Sinica,1988,37(12):1925-1931. |
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| Authors: | ZHANG YONG YU QI ZHENG JIAN-SHENG YAN BING-ZHANG WU BO-XI LI GUO-HUA WANG ZHAO-PING and HAN HE-XIANG |
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| Abstract: | The photoluminescence of GaAs0.15P0.85: N has been investigated under hydrostatic pressure at 77 K. The NN1 emission is clearly seen when P>10kbar. Meanwhile, luminescence quenching and band narrowing of Nx line have been observed under pressure. The results show that the pressure effectively enhances the Nx→NN1 thermally assisted exciton transfer processes. The pressure behaviors of Nx and NN1 levels have been analysed and fitted to a theoretical model. The pressure coefficients of the levels and some parameters related to their wavefunctions have been determined by fitting calculations. |
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