Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper.The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method.The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μm SiC substrate are 22.5 K/W and 7.2 K/W respectively,which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs.It is also experimentally proved that the extraction of the chiplevel thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Impact of CHFa Plasma Treatment on A1GaN/GaN HEMTs Identified by Low-Temperature Measurement

We investigate the impact of CHFa plasma treatment on the performance of AIGaN/GaN HEMT （F-HEMT） by a temperature-dependent measurement in the thermal range from 6 K to 295 K. Tlle temperature dependence of the transconductance characteristics in F-HEMT declares that the Coulomb scattering and the optical phonon scattering are effectively enhanced by the fluorine ions in the A1GaN layer. The fluorine ions not only provide immobile negative charges to deplete 2DEG, but also enhance the Schottky barrier height of the metal gate. Thermal activation of the carrier traps induced by CHF3 plasma for F-HEMT contributes to the negative shift of the threshold voltage by -3.4mV/℃ with the increasing temperature. The reverse gate-leakage current of F-HEMT is decreased by more than two-order magnitude in comparison with that of conventional A1GaN/GaN HEMT （C-HEMT） without fluorine ions.     

Low-resistance Ohmic contact on polarization-doped AIGaN/GaN heterojunction

High electronic density is achieved by polarization doping without an impurity dopant in graded AIGaN films. Low specific contact resistance is studied on the polarization-doped A1GaN/GaN heterojunctions by using the transmission line method （TLM）. The sheet density of polarization-doped A1GaN/GaN heterojunction is 6 × 10 14 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The cartier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal （Ti/A1/Ti/Au） is deposited and annealed at 650 ℃ to realize the Ohmic contacts on the graded A1GaN/GaN heterojunctions.     

Significant performance enhancement in A1GaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of A1GaN/GaN high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.     

An improved EEHEMT model for kink effect on AIGaN/GaN HEMT

In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency （RF） large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide （Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT （10 × 125 μm））. The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.     

High-power vertical-cavity surface-emitting lasers bonded with efficient packaging

<正>High-power vertical-cavity surface-emitting lasers(VCSELs) are processed using a wet thermal-selective oxidation technique.The VCSEL chips are packaged by employing three different bonding methods of silver solder,In-Sn solder,and metalized diamond heat spreader.After packaging,optical output power, wavelength shift,and thermal resistance of the devices are measured and compared in an experiment.The device packaged with a metalized diamond heat spreader shows the best operation characteristics among the three methods.The 200-μm-diameter device bonded with a metalized diamond heat spreader produces a continuous wave optical output power of 0.51 W and a corresponding power density of 1.6 kW/cm~2 at room temperature.The thermal resistance is as low as 10 K/W.The accelerated aging test is also carried out at high temperature under constant current mode.The device operates for more than 1000 h at 70℃,and the total degradation is only about 10%.     

Responsivity and noise characteristics of AlGaN/GaN-HEMTterahertz detectors at elevated temperatures

The responsivity and the noise of a detector determine the sensitivity. Thermal energy usually affects both the responsivity and the noise spectral density. In this work, the noise characteristics and responsivity of an antenna-coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) terahertz detector are evaluated at temperatures elevated from 300 K to 473 K. Noise spectrum measurement and a simultaneous measurement of the source–drain conductance and the terahertz photocurrent allow for detailed analysis of the electrical characteristics, the photoresponse, and the noise behavior. The responsivity is reduced from 59 mA/W to 11 mA/W by increasing the detector temperature from 300 K to 473 K. However,the noise spectral density maintains rather constantly around 1–2 pA/Hz~(1/2) at temperatures below 448 K, above which the noise spectrum abruptly shifts from Johnson-noise type into flicker-noise type and the noise density is increased up to one order of magnitude. The noise-equivalent power(NEP) is increased from 22 pW/Hz~(1/2) at 300 K to 60 pW/Hz~(1/2) at 448 K mainly due to the reduction in mobility. Above 448 K, the NEP is increased up to 1000 pW/Hz~(1/2) due to the strongly enhanced noise. The sensitivity can be recovered by cooling the detector back to room temperature.     

Reconstruction of Intrinsic Thermal Parameters of Methane Hydrate and Thermal Contact Resistance by Freestanding 3ω Method

It is essential to obtain thermophysical properties of methane hydrate precisely with a freestanding probe for modeling and predicting thermal transport in gas hydrates. A method with a freestanding 3ω probe is presented to reconstruct the intrinsic thermal conductivity, thermal diffusivity, and thermal contact resistance of methane hydrate. Isolated from the thermal contact resistance, the intrinsic thermal conductivity of methane hydrate decreases between 250 K and 280 K and is 41% larger than the effective value at 253 K. More importantly, when the thermal contact resistance is isolated, the temperature dependence of intrinsic thermal conductivity shows a converse trend with the generally accepted glass-like feature at high temperature. Otherwise, thermal contact resistances measured in the experiment between the freestanding 3ω probe and the methane hydrate sample are extraordinary large. The freestanding 3ω method in this work is expected to measure the thermal property of methane hydrate more accurately.     

Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique

Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interracial thermal resistance. The results show that the average thermal conductivity of 330- 1000nm aluminium oxide thin films is 3.3 Wm^-1K^-1 at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.     

Analysis and compensation of thermal lens effects in Tm：YAP lasers

The thermal lens effects in Tm：YAP laser are analyzed by solving the Poisson equation with finite difference method. The thermal focal lengths measured are in the range of 40-90 mm at the pump power of 16-34 W, consistent with the simulation results. The temperature contribution coefficient （the linear coefficient between the maximum temperature in the laser crystal and the pump power） of 1.19 K/W is also obtained. The convex lens and plano-concave mirror thermal lens compensation methods are proposed and applied to a high power pumped Tm：YAP laser.     

Growth of Semi-Insulating GaN by Using Two-Step AIN Buffer Layer

Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating GaN is dramatically increased to 10^13 Ω/sq by using two-step A1N buffer instead of the traditional low-temperature GaN buffer. The high sheet resistance of as-grown GaN over 10^13 Ω/sq is due to inserting an insulating buffer layer （two-step A1N buffer） between the high-temperature GaN layer and a sapphire substrate which blocks diffusion of oxygen and overcomes the weakness of generating high density carrier near interface of GaN and sapphire when a low-temperature GaN buffer is used. The result suggests that the high conductive feature of unintentionally doped GaN is mainly contributed from the highly conductive channel near interface between GaN and the sapphire substrate, which is indirectly manifested by room-temperature photoluminescence excited by an incident laser beam radiating on growth surface and on the substrate. The functions of the two-step A1N buffer layer in reducing screw dislocation and improving crystal quality of GaN are also discussed.     

Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor(HEMT) with an artificial neural network(ANN).The AlGaN/GaN HEMT device structure and its fabrication process are described.The circuit-based Neuro-space mapping(neuro-SM) technique is studied in detail.The EEHEMT model is implemented according to the measurement results of the designed device,which serves as a coarse model.An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model.Its optimization is performed.The simulation results from the model are compared with the measurement results.It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model.     

Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC

A Ni/Ta bilayer is deposited on n-type 6H–Si C and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I–V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction(GIXRD),Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050?C and the GIXRD results show a distinct phase change from Ta2 C to Ta C at this temperature. A specific contact resistance of 6.5×10-5?·cm2is obtained for sample Ni(80 nm)/Ta(20 nm)/6H–Si C after being annealed at 1050?C. The formation of the Ta C phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H–Si C. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H–Si C when annealed at different temperatures.     

Study on thermal diffusivity of materials by laser photothermal reflection technique

A method of measuring thermal diffusivity of materials at room temperature by photothermal reflection technique is described. An intensity-modulated Ar+ laser beam is used as incident light. The beam is focused to about 1 mm diameter spot and illuminates the sample surface. HgCdTe infrared detector is used to receive photothermal signal. Using this technique, the photothermal signals are experimentally measured as the function of different frequencies. The thermal diffusivities can be obtained by fitting the experimental data. On the other hand, the thermal diffusivities of one-way composite and orthogonal symmetric arranged composites Al2O3/Al are measured in transverse, longitudinal and arbitrary directions. The results show that the diffusivity of one-way material decreases with the increase of the measurement angle; the diffusivity of orthogonally arranged material almost keeps the same when measurement angle changes.     

Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction

High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method(TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6×1014cm-2at room temperature.The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal(Ti/Al/Ti/Au) is deposited and annealed at 650°C to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.     

Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique

Self-heating in multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of AlGaN/GaN HEMT is estimated from the calibration curve of passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

The effect of surface roughness on thermal-elasto-hydrodynamic model of contact mechanical seals

In this paper,the effect of surface roughness on sealing clearance,pressure distribution,friction torque and leakage is studied by the thermal-elasto-hydrodynamic mixed lubrication model.A convergent nominal clearance is formed by the pressure deformation and thermal deformation of the seal faces.This causes more serious wear in the inner side than that of the outer side of the contact area.Mass leakage increases with the growing of the surface roughness.The temperature and thermal deformation on the seal surface increases substantially if the roughness is reduced.The contact mechanical seals have consistent performance when the standard deviation of surface roughness is approximately 0.2μm.In order to validate the theoretical analysis model,a method combining the measurement of three-dimensioned profile and Raman spectrum is proposed.     

Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability

With the aid of a thermal-electrical model,a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed.The method can effectively enhance the thermal stability of the devices without sacrificing the design time.Taking a 40-finger heterojunction bipolar transistor for example,the device with non-uniform emitter finger lengths is optimized and fabricated.Both the theoretical and the experimental results show that,for the optimum device,the peak temperature is lowered by 26.19 K and the maximum temperature difference is reduced by 56.67% when compared with the conventional heterojunction bipolar transistor with uniform emitter finger length.Furthermore,the ability to improve the uniformity of the temperature profile and to expand the thermal stable operation range is strengthened as the power level increases,which is ascribed to the improvement of the thermal resistance in the optimum device.A detailed design procedure is also summarized to provide a general guide for designing power heterojunction bipolar transistors with non-uniform finger lengths.     

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.