Determination of conduction band edge characteristics of strained Si/Si1-xGex

The feature of conduction band （CB） of Tensile-Strained Si（TS-Si） on a relaxed Si1-xGex substrate is systematically investigated, including the number of equivalent CB edge energy extrema, CB energy minima, the position of the extremal point, and effective mass. Based on an analysis of symmetry under strain, the number of equivalent CB edge energy extrema is presented; Using the K.P method with the help of perturbation theory, dispersion relation near minima of CB bottom energy, derived from the linear deformation potential theory, is determined, from which the parameters, namely, the position of the extremal point, and the longitudinal and transverse masses （m1^＊ and mt^＊）are obtained.     

Si3N4/Si表面Si生长过程的扫描隧道显微镜研究

利用原位扫描隧道显微镜和低能电子衍射分析了Si的纳米颗粒在Si₃N₄/Si(111)和Si₃N₄/Si(100)表面生长过程的结构演变.在生长早期T为350—1075K范围内,Si在两种衬底表面上都形成高密度的三维纳米团簇,这些团簇的大小均在几个纳米范围内,并且在高温退火时保持相当稳定的形状而不相互融合.当生长继续时,Si的晶体小面开始显现.在晶态的Si₃N₄(0001)/S 关键词： 氮化硅 扫描隧道显微镜 纳米颗粒     

Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts

The forward current－voltage (I－V) characteristics of polycrystalline CoSi₂/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10^-4A·cm^-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi₂/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off.     

Si-W/Si/SiO2/Si(100)的横截面电子显微镜研究

本文用横截面电子显微镜法分析了Si-W/Si/SiO₂/Si(100)在440—1000℃退火后的晶化过程,以及各个界面的变化情况.发现Si-W合金膜中,WSi₂并未优先在表面、界面处形成晶核.当退火温度不高于700℃时,反应在合金膜内发生,表面、界面起伏和缓.退火温度高达800—1000℃时,界面、表面出现原子扩散,造成剧烈的界面起伏;表面则出现小的热沟槽,Si/SiO₂界面也出现高分辨电子显微镜才能观察到的起伏.表面、界面的原子迁移的动力来源于晶界与表面、界面张力.由于SiO₂中Si—O键很稳定,不易发生Si和O在界面处的互扩散,所以Si/SiO₂界面起伏很小. 关键词：     

Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm2and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures' photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Vibrational and Light-Emitting Properties of Si/Si1−xSnx Heterostructures

Multilayer heterostructures Si/Si_1−xSn_x grown by molecular beam epitaxy on Si (001) substrates have been studied by Raman and photoluminescence spectroscopy. Raman spectra exhibit peaks corresponding to the vibrations of Si-Sn and Sn-Sn bonds; the vibrations of Sn-Sn bonds imply the presence of tin nanocrystals in heterostructures. Two photoluminescence bands at 0.75 eV (1650 nm) and 0.65 eV (1900 nm) have been observed in heterostructures at low temperatures. The former band can be attributed to optical transitions in quantum wells in the type II heterostructure Si/Si_1−xSn_x. The latter band can be associated with excitons localized in tin nanocrystals.

     

Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents

Three oxide heterojunctions made of LaAlO_3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current--voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO_3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p--n heterojunction.     

Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates

An epitsucial γ-Mg2SiO4 thin film can be a good buffer between the Si substrate and some oxide thin films. For high temperature superconducting multilayer structures, hopefully it can be taken as an insulating layer to replace the widely used MgO film. To explore such possibilities, we carry out systematic studies on the influences of pressure and substrate temperature on the epitaxy of γ-Mg2SiO4 thin films grown on Si （100） substrates using rf magnetron sputtering with an Mg target of purity of 99.95 percent. With the substrate temperature kept at 500℃ and the pressure changing from lO Pa to 15 Pa, in the XRD spectra the 7-Mg2SiO4 （400） peak grows drastically while the MgO （200） peak is suppressed. Keeping the pressure at 15Pa and increasing the temperature from 500℃ to 570℃ further can improve the film epitaxy, while working at 780℃ and 11Pa seems to give very good results. X-ray photoelectronic spectroscopy and φ scan are used to characterize the stoichiometry, crystallinity, and in-plane growth of the samples.     

Electronic Structure of Si1-xⅣx/Si Superlattices on Si （001）

We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xⅣx/Si （x = 0.125, 0.25, 0.5, Ⅳ=Ge, Sn） superlattices （SLs） grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875Ge0.125/Si, Si0.75Ge0.25/Si and Si0.875Sn0.125/Si are the F-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xⅣx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.     

Synchrotron investigations of Si/Mo/Si…c-Si (100) multilayer nanoperiodic structures

This paper presents the results of the investigation of c-Si/[Si/Mo] _n /Si multilayer nanoperiodic structures by X-ray absorption near-edge structure (XANES) spectroscopy using synchrotron radiation. Changes in the fine structure of XANES MoL _2,3 spectra confirm the formation of the silicide phase on heterophase interfaces Si/Mo/Si due to the solid-phase interactions between silicon and molybdenum layers.     

X射线衍射研究N2+注入Si

本文首先给出了180keV的N₂⁺注入Si的X射线衍射(XRD)分布,然后用Levenberg-Marquardt最优化方法模拟实验曲线。根据XRD运动学理论,在我们给出的试探胁变函数和多层模型的基础上,用自编程序计算给出了晶格胁变随注入深度、剂量和退火温度的变化。最后我们对实验和计算结果进行了初步的分析讨论。 关键词：     

Tm2O3相对于Si的能带偏移研究

利用分子束外延系统在Si (001) 衬底上制备了单晶Tm₂O₃薄膜, 利用X射线光电子能谱研究了Tm₂O₃相对于Si的能带偏移. 得出Tm₂O₃相对于Si的价带和导带偏移分别为3.1 eV± 0.2 eV和1.9 eV± 0.3 eV, 并得出了Tm₂O₃的禁带宽度为6.1 eV± 0.2 eV. 研究结果表明Tm₂O₃是一种很有前途的高k栅介质候选材料. 关键词： 2O₃')" href="#">Tm₂O₃ X射线光电子能谱 能带偏移     

Si doped Cu0.5Tl0.5Ba2Ca2Cu3O10−δ superconductors

The Si doped (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ (y=0, 0.25, 0.5, 0.75, 1.0, 1.25) superconductor samples have been synthesized to investigate the effect of mobile carriers on the critical temperature and magnitude of diamagnetism of this family of cuprates. The Si doped samples have tetragonal structure as observed from the X-ray diffraction spectra. The c-axis length of the unit cell of (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ was increased after the increase of Si concentration, whereas the critical temperature and the magnitude of diamagnetism have been decreased. The decrease in T_c(0) and magnitude of diamagnetism is possibly due to the deficiency of carriers in CuO₂/SiO₂ planes caused by the +4 state of Si atoms. However, the post-annealing of these samples in oxygen atmosphere has increased the critical temperature and the magnitude of diamagnetism. The FTIR absorption measurements of (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ samples have shown a softening of the apical oxygen mode of the type Cu(1)O_ACu(2) and TlO_ACu(2) with increased concentration of Si in the unit cell; the softening of this mode is directly linked with the increase in the c-axis lattice parameter of the (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ superconductor.     

Interfacial photoconductivity effect of type-Ⅰ and type-Ⅱ Sb2Se3/Si heterojunctions for THz wave modulation

An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb₂Se₃/Si(type-Ⅰ heterojunction) and 90 nm Sb₂Se₃/Si(type-Ⅱ heterojunction) util...     

Microwave spectroscopy of the ν8-ν6 band of diacetylene

Vibration-rotation transitions of diacetylene between the first excited states of the ν₆ (CCH symmetric bending) and the ν₈ (CCH antisymmetric bending) vibrations were observed with a Stark modulation microwave spectrometer. The rotational, centrifugal distortion and l-type doubling constants of the two vibrational states were determined as follows with 2.5 σ uncertainties in parentheses.

     

17.

Bi₂Ti₂O₇/Si薄膜的制备及C-V特性研究          下载免费PDF全文

王少伟  陆卫  王弘  王栋  王民  沈学础 《物理学报》2001,50(12):2461-2465

采用化学溶液分解法(CSD)在Si衬底上制备了Bi₂Ti₂O₇薄膜.X射线双晶衍射和原子力显微镜检测表明,所制备的薄膜主要为Bi₂Ti₂O₇相的多晶材料.同时还研究了AuBi₂Ti₂O₇/n-Si(100)结构的电容电压(C-V)特性,结果表明,在Bi₂Ti₂O关键词： C-V特性 2Ti₂O₇薄膜')" href="#">Bi₂Ti₂O₇薄膜 电荷迁移     

18.

Pr_0.5Ca_0.5MnO₃/Si异质结输运特性和整流特性研究          下载免费PDF全文

万冀豫  金克新  谭兴毅  陈长乐 《物理学报》2010,59(11):8137-8141

利用固相反应法制备Pr_0.5Ca_0.5MnO₃(PCMO)靶材,并采用脉冲激光沉积法(PLD)在n型Si(111)基片上沉积PCMO外延薄膜,研究了薄膜的输运特性及薄膜与Si衬底形成异质结的整流特性.结果表明:在80—300 K温度范围内,PCMO薄膜的阻温关系符合变程跳跃模型,随着温度的升高表现出从一维到二维再到三维的转变,分析认为可能源于轨道自由度对电子输运特性的影响.PCMO/Si异质结在磁场作用下整流特性得到改善,且在正向电流方向出 关键词： 0.5Ca_0.5MnO₃')" href="#">Pr_0.5Ca_0.5MnO₃ Si 整流 正磁电阻     

19.

PbZr_0.53Ti_0.47O₃/SiO₂/Si复合薄膜的取向生长及铁电性研究     

林媛　许波赵柏儒  陈金松 《低温物理学报》1999

     

20.

用深能级瞬态谱方法研究赝晶Si/Ge_0.25Si_0.75/Si单量子阱的价带偏移          下载免费PDF全文

李先皇  陆昉  孙恒慧 《物理学报》1993,42(7):1153-1159

应变的Ge_xSi_1-x层和未应变的硅层间的能带偏移主要是价带偏移。量子阱中载流子的热发射能与界面的能带偏移有着密切的关系。本文用深能级瞬态谱(DLTS)研究分子束外延生长的p型Si/Ge_0.25Si_0.75/Si单量子阱的价带偏移,阱宽为15nm,考虑到电场的影响和量子阱中第一子能级的位置,对从DLTS得到的热发射能进行适当的修正,可以计算出Si/Ge_0.25Si_0.75/S 关键词：     

	$\text{B}{}_{\mathrm{v}}\text{(}\text{MHz}\text{)}$	$\text{D}{}_{\mathrm{v}}\text{(}\text{kHz}\text{)}$	$\text{q}{}_{\mathrm{v}}\text{(}\text{MHz}\text{)}$
$\text{ν}{}_6$	4391.3230(84)	0.582(154)	2.4830(32)
$\text{ν}{}_8$	4391.1921(94)	0.594(179)	2.4073(37)

Bi2Ti2O7/Si薄膜的制备及C-V特性研究

采用化学溶液分解法(CSD)在Si衬底上制备了Bi₂Ti₂O₇薄膜.X射线双晶衍射和原子力显微镜检测表明,所制备的薄膜主要为Bi₂Ti₂O₇相的多晶材料.同时还研究了AuBi₂Ti₂O₇/n-Si(100)结构的电容电压(C-V)特性,结果表明,在Bi₂Ti₂O关键词： C-V特性 2Ti₂O₇薄膜')" href="#">Bi₂Ti₂O₇薄膜 电荷迁移     

Pr0.5Ca0.5MnO3/Si异质结输运特性和整流特性研究

利用固相反应法制备Pr_0.5Ca_0.5MnO₃(PCMO)靶材,并采用脉冲激光沉积法(PLD)在n型Si(111)基片上沉积PCMO外延薄膜,研究了薄膜的输运特性及薄膜与Si衬底形成异质结的整流特性.结果表明:在80—300 K温度范围内,PCMO薄膜的阻温关系符合变程跳跃模型,随着温度的升高表现出从一维到二维再到三维的转变,分析认为可能源于轨道自由度对电子输运特性的影响.PCMO/Si异质结在磁场作用下整流特性得到改善,且在正向电流方向出 关键词： 0.5Ca_0.5MnO₃')" href="#">Pr_0.5Ca_0.5MnO₃ Si 整流 正磁电阻     

用深能级瞬态谱方法研究赝晶Si/Ge0.25Si0.75/Si单量子阱的价带偏移

应变的Ge_xSi_1-x层和未应变的硅层间的能带偏移主要是价带偏移。量子阱中载流子的热发射能与界面的能带偏移有着密切的关系。本文用深能级瞬态谱(DLTS)研究分子束外延生长的p型Si/Ge_0.25Si_0.75/Si单量子阱的价带偏移,阱宽为15nm,考虑到电场的影响和量子阱中第一子能级的位置,对从DLTS得到的热发射能进行适当的修正,可以计算出Si/Ge_0.25Si_0.75/S 关键词：