YMnO_3薄膜的铁电行为及其纳米尺度铁电畴的研究

六方YMnO_3是一种特殊的多铁性材料,因其具有介电常数低、单一极化轴、无挥发性元素等特点,在磁电领域具有独特的优势,但目前关于YMnO_3薄膜的铁电性特别是畴结构的研究相对较少.本文采用溶胶-凝胶法在Si(100)基片上制备了多铁性YMnO_3薄膜,利用掠入射X-射线衍射、原子力显微镜对薄膜的结构及表面形貌进行了分析,用压力显微镜(PFM)技术研究了纳米尺度畴结构及微区电滞行为,并通过I-V,P-E曲线进一步研究了薄膜的漏电流和宏观电滞行为.结果表明,该薄膜为六方钙钛矿结构,YMnO_3晶粒大小均匀并且结晶性较好,薄膜表面粗糙度为7.209 nm.PFM图显示出清晰的电畴结构,结合典型的微区振幅蝴蝶曲线和相位电滞回线,证实该YMnO_3薄膜具有较好的铁电性.由于受内建电场的作用,振幅曲线和相位曲线都向正向偏移,表现出非对称特征.该薄膜的漏电流密度低于10~(-6)A·cm~(-2),因而其电滞回线基本能够达到饱和.     

吸收式光纤温度传感器的研究

提出了一种利用半导体光吸收谱随温度变化原理设计的半导体吸收式光纤温度传感器.该传感器用GaAs晶片作为温度敏感元件，以光纤作为传光介质，发光二极管作为光源，光电管作为光电转换器件.利用双光束补偿原理,消除了由于光源不稳定产生的干扰.研制出的光纤传感器具有体积小，结构简单，抗电磁干扰，灵敏度高等优点.实验表明:该传感器在－20℃~85℃温度范围内可以达到0.1℃的准确度，可以实现强电磁干扰下的高空飞行器内环境温度的测量.为进一步实现光传飞控系统中的温度测控奠定了基础.     

复合地基群井固结模型理论研究

针对复合地基固结问题,考虑井阻和土体径竖向渗流的影响,建立以"桩–土–桩"为单元的复合地基群井计算模型,采用解析解法,推导出瞬时载荷作用下复合地基群井固结解析解,讨论了复合地基固结特点和孔压等的变化规律。研究表明,复合地基群井固结模型为复合地基固结理论的研究提供了一种新思路,在井径比大于5时,基于中心桩、边桩流量相等假设,复合地基群井固结理论所求固结度和传统固结理论所求固结度相差很小,可忽略不计;桩体渗透系数、内外扰动区土体径向渗透系数、土体竖向渗透系数越大,复合地基固结速率越快;堆载越大,最终达到稳定时的沉降量和竖向应变越大;地基表层土体的孔压消散速率和竖向应变速率大于地基深部土体。     

Enhanced ferroelectricity and ferromagnetism in Bi0.9Ba0.1FeO3/La2/3Sr1/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.1FeO3(BBFO)/La2/3Sr1/3MnO3(LSMO) heterostructures are fabricated on LaAlO3(100) substrates by pulsed laser deposition. Giant remnant polarization value(～ 85 μC/cm2) and large saturated magnetization value(～ 12.4 emu/cm3) for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectric properties in the BBFO/LSMO heterostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Transport and magnetoresistance effect in an oxygen-deficient SrTiO_3/La_(0.67)Sr_(0.33)MnO_3 heterojunction

An oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction is fabricated on an SrTiO3 （001） substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∝ exp （eV/nkT） under small forward bias, while it becomes space charge limited and follows I ∝ Vm（T） with 1.49〈 m 〈1.99 under high bias. Such a heterojunction also exhibits magnetoresistance （MR） effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H=0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics.     

Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm2and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures' photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.