钴氧化物中晶格与自旋的关联耦合效应研究

强关联电子体系具有多序参量耦合且极易受到外场高效调控的特性.钴氧化物(LaCoO₃)是一类典型的多铁性(兼具铁弹性和铁磁性)氧化物材料,受到了研究者们广泛和深入的研究.过去,针对钴氧化物的研究都集中于应力作用下的铁弹性相变和结构调控方面.近年来,研究人员新奇地发现钴氧化物薄膜在张应力作用下发生顺磁到铁磁相转变,但其根源一直存在较大争议.部分实验证据表明应力将会导致钴离子价态降低产生自旋态转变,而另一些研究者认为应力诱导的纳米畴结构会呈现高自旋态的长程有序排列,才是钴氧化物薄膜铁磁性的主要原因.本综述主要介绍近几年来钴氧化物薄膜和异质结中自旋与晶格之间关联耦合效应的系列进展.在保持钴离子价态不变时,通过薄膜厚度、晶格失配应力、晶体对称性、表面形貌、界面氧离子配位和氧八面体倾转等结构因素诱导钴氧化物薄膜的自旋态可逆转变,从而形成高度可调的宏观磁性.进而,研究者们利用原子级精度可控的薄膜生长技术构筑了单原胞层钴氧化物超晶格,通过高效的结构调控,实现了超薄二维磁性氧化物材料.这些系列进展不仅澄清了强关联电子体系中晶格与自旋等序参量之间的强耦合关系,而且为实现氧化物自旋电子...     

Photon-interactions with perovskite oxides

Photons with variable energy, high coherency, and switchable polarization provide an ideal tool-kits for exploring the cutting-edge scientific questions in the condensed matter physics and material sciences. Over decades, extensive researches in the sample fabrication and excitation have employed the photon as one of the important means to synthesize and explore the low-dimensional quantum materials. In this review, we firstly summarize the recent progresses of the state-of-the-art thin-film deposition methods using excimer pulsed laser, by which syntactic oxides with atomic-unit-cell-thick layers and extremely high crystalline quality can be programmatically fabricated. We demonstrate that the artificially engineered oxide quantum heterostructures exhibit the unexpected physical properties which are absent in their parent forms. Secondly, we highlight the recent work on probing the symmetry breaking at the surface/interface/interior and weak couplings among nanoscale ferroelectric domains using optical second harmonic generation. We clarify the current challenges in the in-situ characterizations under the external fields and large-scale imaging using optical second harmonic generation. The improvements in the sample quality and the non-contact detection technique further promote the understanding of the mechanism of the novel properties emerged at the interface and inspire the potential applications, such as the ferroelectric resistive memory and ultrahigh energy storage capacitors.     

High-performance synaptic transistors for neuromorphic computing

The further development of traditional von Neumann-architecture computers is limited by the breaking of Moore’s law and the von Neumann bottleneck, which make them unsuitable for future high-performance artificial intelligence (AI)systems. Therefore, new computing paradigms are desperately needed. Inspired by the human brain, neuromorphic computing is proposed to realize AI while reducing power consumption. As one of the basic hardware units for neuromorphic computing, artificial synapses have recently aroused worldwide research interests. Among various electronic devices that mimic biological synapses, synaptic transistors show promising properties, such as the ability to perform signal transmission and learning simultaneously, allowing dynamic spatiotemporal information processing applications. In this article, we provide a review of recent advances in electrolyte-and ferroelectric-gated synaptic transistors. Their structures, materials,working mechanisms, advantages, and disadvantages will be presented. In addition, the challenges of developing advanced synaptic transistors are discussed.     

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Two-dimensional electron gas （2DEG） with high electron mobility is highly desired to study the emergent properties and to enhance future device performance.Here we report the formation of 2DEG with high mobility at the interface between rock-salt Ba O and perovskite Sr Ti O₃.The interface consists of the ionically compensated Ba O_1-δlayer and the electronically compensated Ti O₂ layer,which is demonstrated as a perfect interface without lattice mismatch.The so-fo...     

Ultraviolet Sensitive Ultrafast Photovoltaic Effect in Tilted KTaO3 Single Crystals

An ultraviolet sensitive ultrafast photovoltaic effect is observed in tilted 10° KTaO3 （KT） single crystals. The rise time of the transient photovoltaic pulse is 497.4 ps and the full width at half maximum is 974.6 ps under irradiation of a 266 nm laser pulse with 25 ps duration. An open-circuit photovoltage sensitivity of 328 mV/mJ and a photocurrent sensitivity of 460 mA/mJ are obtained. The experimental results demonstrate the potential applications of KT single crystals in ultraviolet detection.     

外场对拓扑相变氧化物薄膜物性的调控研究进展

钙钛矿型过渡金属氧化物在外场激励下可以通过得失氧离子发生显著的结构拓扑相变,同时伴随着输运、磁性、光学等物性的巨大变化,是近年来被重点关注的研究体系,在固态氧化物燃料电池、氧气传感器、催化活性、智能光学窗口以及神经形态计算器件中具有巨大的应用前景.本工作回顾了近年来国内外研究小组在拓扑相变氧化物薄膜及其物性调控方面的工作进展,详细介绍了这类典型薄膜材料在应力场、电场、光场、温度场等外场激励下呈现出的新奇物性,并讨论了其基本物理机制.本综述旨在进一步认识此类材料中的电荷、晶格、轨道等量子序之间的微观耦合机制及其与宏观物性的关联,相关研究有望为基于功能氧化物的高灵敏度、弱场响应的电子器件提供新材料、新途径和新思路.     

Photoelectric property of LaAlO3-δ/Si heterojunctions with different oxygen contents

Three oxide heterojunctions made of LaAlO_3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current--voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO_3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p--n heterojunction.