Short range order transformation and magnetostriction of Fes3Ga17 ribbons

The relationship between magnetostriction and structure of melt-spun Fes3Ga17 ribbons are investigated by XRD and M5ssbauer spectrum technique （MS）. As the heat-treatment temperature increases from 650℃ to 800℃, the magnetostriction coefficient of Fes3Ga17 ribbon first increases and then decreases. The largest magnetostriction coeiffcient （-578.4 ppm） is achieved in those specimens quenched at 750oc. According to the XRD and MSssbauer spectrum anal- ysis, a small quantity of DO3 phase is precipitated in Fe83Ga17 ribbons when quenched from 650℃ and the DO3 phase is gradually transformed into B2-1ike phase if quenched at higher temperature. However, both DO3 and B2-1ike phases disappear when the temperature increases up to 800℃. From this point of view, B2-1ike phase might be beneficial to the enhancement of magnetostrictive properties of melt-spun ribbons.     

Electric field modulation technique for high-voltage AIGaN/GaN Schottky barrier diodes

A novel structure of AIGaN/GaN Schottky barrier diode （SBD） featuring electric field optimization techniques of anode-connected-field-plate （AFP） and magnesium-doped p-type buried layer under the two-dimensional electron gas （2DEG） channel is proposed. In comparison with conventional A1GaN/GaN SBDs, the magnesium-doped p-type buried layer in the proposed structure can provide holes that can help to deplete the surface 2DEG. As a result, surface field strength around the electrode edges is significantly suppressed and the electric field along the channel is distributed more evenly. Through 2D numerical analysis, the AFP parameters （field plate length, LAFP, and field plate height, TAFP） and p-type buried layer parameters （p-type layer concentration, Np, and p-type layer thickness, Tp） are optimized to achieve a three-equal-peak surface channel field distribution under exact charge balance conditions. A novel structure with a total drift region length of 10.5 μm and a magnesium-doped p-type concentration of 1 × 10^17 cm 3 achieves a high breakdown voltage （VB） of 1.8 kV, showing 5 times improvement compared with the conventional SBD with the same device dimension.     

A low specific on-resistance SOI LDMOS with a novel junction field plate

A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.     

Analysis and experimental concepts of the vibrating wire alignment technique

The vibrating wire alignment technique is a method which, by measuring the spatial distribution of a magnetic field, can achieve very high alignment accuracy. The vibrating wire alignment technique can be applied to fiducializing magnets and the alignment of accelerator straight section components, and it is a necessary supplement to conventional alignment methods. This article gives a systematic summary of the vibrating wire alignment technique, including vibrating wire model analysis, system frequency calculation, wire sag calculation, and the relation between wire amplitude and magnetic induction intensity. On the basis of this analysis, this article outlines two existing alignment methods, one based on magnetic field measurement and the other on amplitude and phase measurements. Finally, some basic experimental issues are discussed.     

Influence of temperature on strain-induced polarization Coulomb field scattering in AIN/GaN heterostructure field-effect transistors

Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures （~ 100 K）. Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is inves- tigated. The polarization Coulomb field （PCF） scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin A1N barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.     

Phase field crystal study of the crystallization modes within the two-phase region

Using the phase field crystal approach, the crystallization process within the liquid–solid coexistence region is investigated for a square lattice on an atomic scale. Two competing growth modes, i.e., the diffusion-controlled growth through long-range atomic migration in liquid and the diffusionless growth through local atom rearrangement, which give rise to two completely different crystallization behaviors, are compared. In the diffusion-controlled regime, the interface migrates in a layerwise manner, leading to a gradual change of crystal morphology from truncated square to four-fold symmetric dendrite with the increase of driving force. For the diffusionless growth mode, a single crystal with no significant density change occupies the whole system at a faster rate while exhibiting a small growth anisotropy. The competition between these two modes is also discussed from the key input of the phase field crystal model: the correlation function.     

Hadronic light-by-light scattering contribution to the muon g－2

We review recent developments concerning the hadronic light-by-light scattering contribution to the anomalous magnetic moment of the muon. We first discuss why fully off-shell hadronic form factors should be used for the evaluation of this contribution to the g- 2. We then reevaluate the numerically dominant pion-exchange contribution in the framework of large-No QCD, using an off-shell pion-photon-photon form factor which fulfills all QCD short-distance constraints, in particular, a new short-distance constraint on the off-shell form factor at the external vertex in g- 2, which relates the form factor to the quark condensate magnetic susceptibility in QCD. Combined with available evaluations of the other contributions to hadronic light-by-light scattering this leads to the new result αμ^LbyL;had= （116±40） × 10^-11, with a conservative error estimate in view of the many still unsolved problems. Some potential ways for further improvements are briefly discussed as well. For the electron we obtain the new estimate αe^LbyL;had= （3.9± 1.3） × 10^-14.     

Shear Viscosity of Hot QED at Finite Chemical Potential from Kubo Formula

Within the framework of finite temperature field theory this paper discusses the shear viscosity of hot QED plasma through Kubo formula at one-loop skeleton diagram level with a finite chemical potential. The effective widths （damping rates） are introduced to regulate the pinch singularities and then gives a reliable estimation of the shear viscous coefficient. The finite chemical potential contributes positively compared to the pure temperature case. The result agrees with that from the kinetics theory qualitatively.     

Effective Action for Noncommutative U（1） Gauge Theory with Higher Dimensional Terms

In this paper we apply the assumption of our recent work in noncommutative scalar models to the noncommutative U（1） gauge theories. This assumption is that the noneommutative effects start to be visible continuously from a scale ANC and that below this scale the theory is a commutative one. Based on this assumption and using background field method and loop calculations, an effective action is derived for noncommutative U（1） gauge theory. It will be shown that the corresponding low energy effective theory is asymptotically free and that under this condition the noncommutative quadratic IR divergences will not appear. The effective theory contains higher dimensional terms, which become more important at high energies. These terms predict an elastic photon-photon scattering due to the noncommutativity of space. The coefficients of these higher dimensional terms also satisfy a positivity constraint indicating that in this theory the related diseases of superluminal signal propagating and bad analytic properties of S-matrix do not exist. In the last section, we will apply our method to the noncommutative extra dimension theories.     

Theoretical Study on N = 126 Shell Evolution

The nuclei around magic number N = 126 are investigated in the deformed relativistic mean field （RMF） model with effective interactions TMA. We focus investigations on the N = 126 isotonic chain. The N = 126 shell evolution is studied by analyzing the variations of two-neutron （proton） separation energies, quadruple deformations, single particle levels etc. The good agreement of two-neutron separation energies between experimental data and calculated values is reached. The RMF theory predicts that the sizes of N = 126 shell become smaller and smaller with the increasing of proton number Z. However, the N = 126 shell exists in our calculated region all along. According to the calculated two-proton separation energies, the RMF theory suggests ^220Pu is a two-proton drip-line nucleus in the N = 126 isotonic chain.     

Study on the effects of chromaticity and magnetic field tracking errors at CSNS/RCS

The Rapid Cycling Synchrotron （RCS） is a key component of the China Spallation Neutron Source （CSNS）. For this type of high intensity proton synchrotron, the chromaticity, space charge effects, and magnetic field tracking errors between the quadrupoles and the dipoles can induce beta function distortion and tune shift, and induce resonances. In this paper, the combined effects of chromaticity, magnetic field tracking errors and space charge on beam dynamics at CSNS/RCS are studied systemically. 3-D simulations with different magnetic field tracking errors are performed by using the code ORBIT, and the simulation results are compared with the case without tracking errors.     

Theoretical research on electron beam modulation in a field-emission cold cathode electron gun

In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field between the cathode and the anode, the steady FE electron beam can be modulated in the electron gun. The optimal structure of the electron gun is discovered using 3D electromagnetism simulation software, and the FE electron gun is simulated by PIC simulation software. The results show that a broadband （74-114 GHz） modulation can be achieved by the electron gun with a rhombus channel, and the modulation amplitude of the beam current increases with the increases in the input power and the electrostatic field.     

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.     

Charge Densities of Unstable Nuclei with Electron Scattering

Relativistic mean-field theory and phase-shift analysis are combined together to investigate the elastic Coulomb scattering between electrons and unstable nuclei. Electron scattering at several different energies is studied and compared, in order to see the energy dependence of electron-nucleus scattering. It is shown that electron scattering at 200 MeV or 300 MeV can be used to reveal electron-nucleus scattering information around the first diffraction minimum. Shifts in opposite directions are obtained for the first diffraction minima of the electron scattering off the ground and first excited states of ^17F with ^16O as reference, and similar effects are obtained for ^18Ne. Besides, some neutron-rich N = 8 isotones are also studied. Results show that electron scattering will be very useful and important in studying both proton- and neutron-rich nuclei in the future.     

A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Tuning for the first 9-cell TESLA cavity of PKU

A method based on circuit model is used to tune the first home-made 9-cell TESLA type superconducting niobium cavity at Peking University. After tuning, a flat field profile with a final π-mode frequency within 3 kHz of target frequency is achieved. The field flatness is measured by a bead-pull method, and the relative electric field is calculated from the frequency shift perturbed by the bead stepping along the axis of the cavity.     

Electron Dispersion in Liquid Alkali and Their Alloys

Ashcroft＇s local empty core （EMC） model pseudopotential in the second-order perturbation theory is used to study the electron dispersion relation, the Fermi energy, and deviation in the Fermi energy from free electron value for the liquid alkali metals and their equiatomic binary alloys for the first time. In the present computation, the use of pseudo-alloy-atom model （PAA） is proposed and found successful. The influence of the six different forms of the local field correction functions proposed by Hartree （H）, Vashishta Singwi （VS）, Taylor （T）, lehimaru-Utsumi （IU）, Farid et al. （F）, and Sarkar et al. （S） on the aforesaid electronic properties is examined explicitly, which reflects the varying effects of screening. The depth of the negative hump in the electron dispersion of liquid alkalis decreases in the order Li --→ K, except for Rb and Cs, it increases. The results of alloys are in predictive nature.     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.     

关于费曼传播子在位形空间的解析式

We correct an inaccurate result of previous work on the Feynman propagator in position space of a free Dirac field in （3 ＋ 1）-dimensional spacetime; we derive the generalized analytic formulas of both the scalar Feynman propagator and the spinor Feynman propagator in position space in arbitrary （D ＋ 1）- dimensional spacetime; and we further find a recurrence relation among the spinor Feynman propagator in （D＋1）-dimensional spacetime and the scalar Feynman propagators in （D＋1）-, （D-1）- and （D＋3）-dimensional spacetimes.