海拔3220米动量大于4 GeV/c的μ子垂直积分动量谱

我们在云南海拔3220米高山上,利用G-M计数管磁谱仪,测量了动量大于4 GeV/c的宇宙线μ子垂直积分动量谱.实验给出的谱可用一指数函数表示:I（>P）=Q（p+4）^1.86±0.06(cm^-2·sr^-1·s^-1),其中动量P以GeV/c为单位,Q为常数.同时测量了动量在4—23 GeV/c范围μ子的荷电比为N_μ⁺/N_μ^-=1.26±0.11.另外对本谱仪的动量误差问题作了讨论和计算.     

海拔3220米水平宇宙线μ子强度和动量谱测量

在云南省海拔3220米高山上用G-M计数管描迹仪测量了天顶角78.4-90°范围、平均天顶角86.2°、动量大于2GeV/c的μ介子绝对强度为（9.2±1.0）·10^-5cm^-2·sr^-1·s^-1。配合磁云室测量了动量2.0-51GeV/c的μ子动量谱。     

Luminosity determination for the pd reaction at 2.14 GeV with WASA-at-COSY

The luminosity for a WASA-at-COSY experiment involving the pd reaction at 2.14 GeV proton-beam energy is determined by the forward pd elastic scattering, which yields an average beam-on-target value of [5.2 ± 0.3(stat) ± 0.3syst] × 10³⁰s^-1cm^-2. In addition, the forward pd elastic-scattering angular distribution is obtained with four-momentum transfer squared -t between 0.16 (GeV/c)² and 0.78 (GeV/c)² at this beam energy, which is compared with other experimental data and the pd double scattering model.     

高山宇宙线荷电强子流强的负正比

在海拔3220米的实验室里,用磁谱仪动量予选装置和多板云室,对落在0.23m²面积上的单根荷电强子进行了观测.考虑到各种可能的修正以后,得出在10—20 GeV/c之间,荷电强子的负正比为:N^-/N⁺=0.53±0.05.当认为N⁺只包含有P和π⁺,N^-是π^-,而且N_π+/N_π-=1时,推算出N_π-/N_p=0.9±0.1.若π^-积分谱的形式为j（>p）=Kp^-r,估算出在5—20 GeV/c的动量范围,r（?）2.3.本文也对荷电强子的积分流强作了粗略的估计,其结果是:j_⊥^p+π（>12 GeV/c）=（7.4±0.7）×10^-5cm^-2·st^-1·s^-1.     

用于飞行时间测量的大面积闪烁计数器定时性能研究

我们研制了用于飞行时间测量的大面积闪烁计数器(80×10×1cm²), 并对此定时系统进行了时间性能的测量. 对影响定时性能的各种因素进行了研究.     

BES主漂移室模型性能的束流测试

本文描述了北京谱仪BES主漂移室一个多层多单元模型的结构, 给出在日本KEK12GeV质子同步加速器K2试验束上, 利用动量0.5～1.5GeV/c的e⁺,π⁺和p束测量模型性能的主要结果. 在3.1cm的单元半宽内, 室的单丝空间分辨率σ_x=170～210μm. 相当四十次dE/dx取样的能量分辨率σ_E/E约为15%, 提供了北京谱仪工作能区鉴别粒子的一种有效方法, 可同飞行时间(TOF)计数器和簇射计数器相互补充.     

闪烁计数器阵列定位系统

该闪烁计数器阵列定位系统,即闪烁计数器描迹仪,不但可以确定带电粒子通过的位置,还可以用做触发计数器。在用做触发计数器时,它还具有选择落入该阵列的带电粒子数目的能力。该描迹仪为8×8闪烁计数器阵列,每条闪烁体（ST401型）为40×5×0.6cm³。配用GDB50光电倍增管。阵列面积为40×40cm²。我们自制了快电子学系统和数据读取系统,在与微处理机联试过程中,工作稳定可靠。造价低廉。     

用于飞行时间测量的大面积闪烁计数器时间性能

我们研制了用于飞行时间测量的大面积闪烁计数器(100×20×1cm³), 并对其时间性能进行了测量. 在使用了一种新型的时间平均器后, 大面积闪烁计数器飞行时间测量系统的时间分辨率达到347%.     

BEPCⅡ: construction and commissioning

This is a status report of the project on befalf of the BEPCⅡ team. BEPCⅡ is a major upgrade of the BEPC (Beijing Electron-Positron Collider). It is a double-ring e⁺-e^－ collider as well as a synchrotron radiation (SR) source with its outer ring, or SR ring. As a collider, BEPCⅡ operates in the beam energy region of 1—2.3 GeV with design luminosity of 1×10³³ cm^－2s^－1 at 1.89 GeV. As a light source, the SR ring operates at 2.5 GeV and 250 mA. Construction of the project started in the beginning of 2004. Installation of the storage ring components was completed in October 2007. Commissioning is in progress. There are still many issues for further studies before reach to 3×10³² cm^－2s^－1.     

A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.     

Surface morphology of He-implanted single-crystalline silicon

Single-crystalline Si (100) samples were implanted with 30 keV He²⁺ ions to doses ranging from 2.0×10¹⁶ to 2.0×10¹⁷ions /cm² and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×10¹⁶ ions /cm² implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×10¹⁶ ions /cm² implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×10¹⁷ ions /cm². Exfoliations occurred on the sample surface to a dose of 2.0×10¹⁷ ions /cm². Mechanisms underlying the surface change were discussed.     

在海平面宇宙线中寻找小电荷粒子

用符合计数器望远镜测量电离损失的方法,在海平面宇宙线中寻找相对论性的小电荷粒子。实验中用厚碘化钠（铊）计数器测量粒子的很小电离损失,来确定粒子电荷。用反符合环形计数器排除侧面进入的粒子本底,实验测量了电荷范围从1/12到1/4电子电荷的小电荷区域。测量的初步结果给出:海平面宇宙线中的（非大气簇射中心区的）小电荷粒子通量的上限,在电荷0.08到0.19电子电荷范围内及0.19到0.25电子电荷范围内,分别小于4×10^-5粒子/平方厘米·秒·立体孤度及2×10^-5粒子/平方厘来·秒·立体弧度（置信水平90％）。     

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO₂ thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO₂/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×10¹⁷, 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm², then irradiated at RT by 853 MeV Pb ions to 5.0×10¹¹, 1.0×10¹², 2.0×10¹² or 5.0×10¹² ions/cm², respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO₂ films. For examples, 5.0×10¹² Pb-ions/cm² irradiation produced huge blue and green light-emitters in 2.0×10¹⁷ C-ions/cm² implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×10¹⁷ carbon-ions/cm² implanted samples, 2.0×10¹² Pb-ions/cm² irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×10¹² Pb-ions/cm² irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×10¹⁸ carbon-ions/cm² implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO₂-based light-emission materials.     

对带电轻子质量公式的一些猜测

本文建议轻子电磁自能通过（（δm）/m）=（1/（2π））n^-b 与量子数 n 联系起来,其中 b 为待定常数.并建议动量截断值 M 与引力常数 k 和精细结构常数α的联系为 M=（?）.得到了带电轻子质量公式（?）.利用 e^-和μ^-质量的实验值和α值作输入,给出计算值 k=（6.67231±0.00026）×10^-8 cm³g^-lsec^-2和m_τ=（1782.306±0.078）MeV,与观察值 k=（6.6720±0.0041）×10^-8cm³ g^-1sec^-2和 m_τ=(1782_-4⁺³)MeV 很好符合.公式预言第四个带电轻子质量应为 m=（11725.47±0.51）MeV 可以在最近的实验中检验。本文还对所建议的质量公式和结果进行了讨论.     

大面积闪烁计数器的性能

对面积为75×37cm²的塑料闪烁体的光收集方式进行了研究。在此基础上,建造了十个计数器。本文介绍了计数器的结构和性能,并对设计原理作了讨论。     

Raman scattering investigation of C-doped a-SiO_2 after high energy heavy ion irradiations

Thermally grown amorphous SiO₂ films were implanted at room temperature with 100 keV C-ions to 5.0×10¹⁷ or 1.2×10¹⁸ ions/cm². These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×10¹¹, 1.0×10¹², 5.0×10¹² ions/cm², or with 308 MeV Xe-ions to 1.0×10¹², 1.0×10¹³, 1.0×10¹⁴ ions/cm², respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp² carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO₂. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO₂ under swift heavy ion irradiations was briefly discussed.     

2M阈式气体契仑科夫探测器

本文描述了为鉴别5—10GeV/c的π—K、K—P而研制的阈式气体契仑科夫探测器.速度分辨率达3.5×10^-5,对粒子的探测效率为99.99％,对阈能以下的粒子的排斥比为1.6×10^-5。     

水平宇宙线穿透粒子的鉴别

本文描述一个用大型磁云室在水平方向宇宙线穿透粒子中寻找新粒子的实验,结果表明β<0.7、m>1GeV/c²的单电荷粒子或相对论性分数电荷粒子的流强小于3×10^-8cm^-2·sr^-1·sec^-1。     

Study of charmonium(-like) states via ISR at Belle

The cross sections for e⁺e－→π⁺π^－J/ψ, π⁺π^－ψ(2S), K⁺K^－J/ψ, DD, D⁰D^－+π⁺+c.c., D^*D+c.c., and D^*D^* are measured using data sample collected on or near the Υ(4S) resonance with the Belle detector at KEKB. A peak near 4.25GeV/c², corresponding to the so called Y(4260), is observed in π⁺π^－J/ψ final state. In addition, there is another cluster of events at around 4.05GeV/c². Two resonant structures are observed in the π⁺π^－ψ(2S) invariant mass distribution, one at 4361±9±9MeV/c² with a width of 74±15±10MeV/c², and another at 4664±11±5MeV/c² with a width of 48±15± 3MeV/c². The rich structures observed in all these final states indicate that our understanding of the vector charmonium states above the open charm threshold is still poor, let alone the other possible dynamics such as charmonium hybrids or final state re-scattering and so on.     

初能大于1014eV的空气簇射的时间相关性

用空气簇射小阵在北京观测了能量大于10¹⁴eV的宇宙线粒子产生的空气簇射的时间相关性. 得到初能E>2.6×10¹⁴eV的空气簇射到达时间间隔的分布, 在t<21秒以内系统地高于指数分布, 显示可能在观测到的簇射中存在时间相关的成份.