A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.