| A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation |
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| 作者姓名： | 孟祥提 黄强 马艳秀 郑永男 范平 朱升云 |
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| 作者单位： | Institute of Nuclear and New Energy Technology Tsinghua University，Institute of Nuclear and New Energy Technology，Tsinghua University，Institute of Nuclear and New Energy Technology，Tsinghua University，China Institute of Atomic Energy，China Institute of Atomic Energy，China Institute of Atomic Energy，Beijing 100084，China，Beijing 100084，China，Beijing 100084，China，Beijing 102413，China，Beijing 102413，China，Beijing 102413，China |
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| 摘 要： | The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109 to 4×10×10cm－2 and 1×109 to 2×1012cm－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×1010 and 2×1012 cm－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.
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| 关 键 词： | semiconductor technology CMOS image sensor proton irradiation average brightness TRIM simulation |
| 收稿时间： | 2007-9-10 |
| 修稿时间： | 2007-12-2 |
A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation |
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| MENG Xiang-Ti HUANG Qiang MA Yan-Xiu ZHENG Yong-Nan FAN Ping ZHU Sheng-Yun Institute of Nuclear and New Energy Technology,Tsinghua University,Beijing ,China China Institute of Atomic Energy,Beijing ,China.A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation[J].High Energy Physics and Nuclear Physics,2008,32(6):442-445. |
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| Authors: | MENG Xiang-Ti HUANG Qiang MA Yan-Xiu ZHENG Yong-Nan FAN Ping ZHU Sheng-Yun Institute of Nuclear and New Energy Technology Tsinghua University Beijing China China Institute of Atomic Energy Beijing China |
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| Institution: | [1]Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084, China [2]China Institute of Atomic Energy, Beijing 102413, China |
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| Abstract: | |
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| Keywords: | semiconductor technology CMOS image sensor proton irradiation average brightness TRIM simulation |
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