The study of a new n/p tunnel recombination junction and its application in a-Si：H/μc-Si：H tandem solar cells

This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.     

MoO3/Ag/AI/ZnO intermediate layer for inverted tandem polymer solar cells

We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for inverted tan- dem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell （3.15%）. The open-circuit voltage of the tandem cell （1.18 V） approaches double that of the single cell （0.61 V）.     

Optical simulation of CsPbI3/TOPCon tandem solar cells with advanced light management

Monolithic perovskite/Si tandem solar cells (TSCs) have experienced rapid development in recent years, demonstrating its potential to exceed the Shockley-Queisser limit of single junction Si solar cells. Unlike typical organic-inorganic hybrid perovskite/silicon heterojunction TSCs, here we propose CsPbI₃/TOPCon TSC, which is a promising architecture in consideration of its pleasurable thermal stability and good compatibility with current PERC production lines. The optical performance of CsPbI₃/TOPCon TSCs is simulated by the combination of ray-tracing method and transfer matrix method. The light management of the CsPbI₃/TOPCon TSC begins with the optimization of the surface texture on Si subcell, indicating that a bifacial inverted pyramid with a small bottom angle of rear-side enables a further minimization of the optical losses. Current matching between the subcells, as well as the parasitic absorption loss from the front transparent conductive oxide, is analyzed and discussed in detail. Finally, an optimized configuration of CsPbI₃/TOPCon TSC with a 31.78% power conversion efficiency is proposed. This work provides a practical guidance for approaching high-efficiency perovskite/Si TSCs.     

GaInP2/GaAs/Ge叠层太阳电池材料的低压MOCVD外延生长

本文采用自制的LP-MOCVD设备,外延生长出GaInP₂/GaAs/Ge叠层太阳电池结构片,对电池材料进行了X射线衍射测试分析.另外,采用二次离子质谱仪测试了电池结构的剖面曲线.用此材料做出的叠层太阳电池,AMO条件下光电转换效率η=13.6%,开路电压V_oc=2230mV,短路电流密度J_sc=12.6mA/cm².     

钙钛矿/硅叠层太阳电池中平面a-Si:H/c-Si异质结底电池的钝化优化及性能提高

最近,旋涂法制备的钙钛矿/平面硅异质结高效叠层太阳电池引起人们广泛关注,主要原因是相比于绒面硅衬底制备的钙钛矿/硅叠层太阳电池,其制备工艺简单、制备成本低且效率高.对于平面a-Si:H/c-Si异质结电池, a-Si:H/c-Si界面的良好钝化是获得高转换效率的关键,进而决定了钙钛矿/硅异质结叠层太阳电池的性能.本文主要从硅片表面处理、a-Si:H钝化层和P型发射极等方面展开研究,通过对硅片表面的氢氟酸(HF)浸泡时间和氢等离子体预处理气体流量、a-Si:H钝化层沉积参数、钝化层与P型发射极(I/P)界面富氢等离子体处理的综合调控,获得了相应的优化工艺参数.对比研究了p-a-Si:H和p-nc-Si:H两种缓冲层材料对I/P界面的影响,其中高电导、宽带隙的p-nc-Si:H缓冲层既能够降低I/P界面的缺陷态,又可以增强P型发射层的暗电导率,提高了前表面场效应钝化效果.通过上述优化,制备出最佳的P-type emitter layer/aSi:H(i)/c-Si/a-Si:H(i)/N-type layer (inip)结构样品的少子寿命与implied-Voc分别达到2855μs和709 mV,表现出良好的钝化效果.应用于平面a-Si:H/c-Si异质结太阳电池,转换效率达到18.76%,其中开路电压达到681.5 mV,相对于未优化的电池提升了34.3 mV.将上述平面a-Si:H/c-Si异质结太阳电池作为底电池,对应的钙钛矿/硅异质结叠层太阳电池的开路电压达到1780 mV,转换效率达到21.24%,证明了上述工艺优化能够有效地改善叠层太阳电池中的硅异质结底电池的钝化及电池性能.     

基于分布式布拉格反射器结构的空间三结砷化镓太阳能电池抗辐照研究

根据电子辐照条件下的常规三结砷化镓太阳能电池光谱响应以及电池电流的损伤特征, 确定电池衰减的物理机理: 中电池在电子辐照后形成的辐照损伤缺陷, 使得基区少子扩散长度被大幅缩短, 影响了光生载流子的收集. 针对中电池衰减的物理机理, 设计不同的基区厚度, 验证辐照后扩散长度缩短至1.5 μm左右. 为提升中电池抗辐照性能, 消除辐照后扩散长度缩减带来的影响, 对中电池外延结构进行设计, 将中电池基区减薄至1.5 μm, 并在其下方嵌入分布式布拉格反射器, 对特定波段光反射进行二次吸收, 弥补中电池减薄的影响. 通过TFCalc光学模系设计软件模拟出的中心波长为850 nm, 15对Al_0.9Ga_0.1As/Al_0.1Ga_0.9As的分布式布拉格反射器, 实际测试最高反射率大于97%, 高反带宽94 nm, 能够满足设计要求. 此基础上进行了新结构电池的外延生长与辐照测试对比. 实验结果表明: 新结构太阳能电池辐照后短路电流衰减比原结构降低了50%, 效率的剩余因子提升2.3%.     

Device simulation of quasi-two-dimensional perovskite/silicon tandem solar cells towards 30%-efficiency

Perovskite/silicon (Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional (3D) hybrid perovskite seriously hinders the lifetimes of tandem devices. In this work, the quasi-two-dimensional (2D) (BA)₂(MA)_n-1Pb_nI_3n+1 (n=1, 2, 3, 4, 5) (where MA denotes methylammonium and BA represents butylammonium), with senior stability and wider bandgap, are first used as an absorber of semitransparent top perovskite solar cells (PSCs) to construct a four-terminal (4T) tandem devices with a bottom Si-heterojunction cell. The device model is established by Silvaco Atlas based on experimental parameters. Simulation results show that in the optimized tandem device, the top cell (n=4) obtains a power conversion efficiency (PCE) of 17.39% and the Si bottom cell shows a PCE of 11.44%, thus an overall PCE of 28.83%. Furthermore, by introducing a 90-nm lithium fluoride (LiF) anti-reflection layer to reduce the surface reflection loss, the current density (J_sc) of the top cell is enhanced from 15.56 mA/cm² to 17.09 mA/cm², the corresponding PCE reaches 19.05%, and the tandem PCE increases to 30.58%. Simultaneously, in the cases of n=3, 4, and 5, all the tandem PCEs exceed the limiting theoretical efficiency of Si cells. Therefore, the 4T quasi-2D perovskite/Si devices provide a more cost-effective tandem strategy and long-term stability solutions.     

基于Al_2O_3/MoO_3复合阳极缓冲层的倒置聚合物太阳能电池的研究

采用旋涂Al_2O_3前驱体溶液和低温退火的方法在活性层上形成Al_2O_3薄膜,并与MoO_3结合形成Al_2O_3/MoO_3复合阳极缓冲层,制备了以聚3-己基噻吩:[6.6]-苯基-C_(61)-丁酸甲酯(P3HT:PC_(61)BM)为活性层的倒置聚合物太阳能电池,并通过改变Al_2O_3前驱体溶液的浓度来分析复合阳极缓冲层对器件性能的影响.结果发现,Al_2O_3/MoO_3复合阳极缓冲层能有效调控倒置聚合物太阳能电池的光电性能及其稳定性.当Al_2O_3前驱体溶液的浓度为0.15%时,器件光伏性能达到最优值,与MoO_3单缓冲层的器件相比,光电转换效率(PCE)由3.85%提高到4.64%;经过80天老化测试后,具有复合阳极缓冲层的器件PCE保留为初始值的76%,而单缓冲层的器件PCE已经下降到50%以下.器件性能得到改善的原因是Al_2O_3/MoO_3复合阳极缓冲层增强了倒置太阳能电池器件阳极对空穴的收集能力,同时钝化了器件活性层,从而提升了太阳能电池器件的光伏性能及其稳定性.     

Improved efficiency of small-molecular (S-M) tandem organic solar cells (TOSCs) by employing low work function alloy nanoparticle intermediate layer

We improved the power conversion efficiency (PCE) of the small molecular (S-M) tandem organic solar cells (TOSCs) by employing different low work function alloy nanoparticle intermediate layers. The enhancement of the PCE was mainly attributed to the gap states formed at the interface between the buffer layer and alloy nanoparticle intermediate layer. The gap states result in the disappearance of the electron injection barrier. Compared with the planar heterojunction (PHJ) TOSCs with single Ag nanoparticle intermediate layer, the PCE of the PHJ TOSC with the Mg-Ag alloy nanoparticle intermediate layer exhibits an enhancement of 7.5%. Moreover, the Mg-Ag alloy nanoparticle intermediate layer was also employed in the bulk-heterojunction (BHJ) TOSCs. Compared with the PHJ TOSCs, the PCE of the BHJ TOSCs with Mg-Ag alloy nanoparticle intermediate layer is doubled and achieves a value of 5.54%.     

Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO₂ or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.     

阴极修饰层对 SubPc/C60 倒置型有机太阳能电池性能的影响

采用Cs₂CO₃, 石墨烯(graphene):Cs₂CO₃混合材料和 ZnO 纳米颗粒作为阴极修饰材料, 研究了不同阴极界面修饰层对基于SubPc/C₆₀的倒置结构的有机太阳能电池性能的影响. 结果表明: 引入适当厚度的阴极修饰层, 可以提高器件的性能和稳定性; 尤其是基于Cs₂CO₃以及graphene:Cs₂CO₃混合阴极修饰层的光伏器件, 能量转换效率(PCE)提高了2倍; 同时, 采用ZnO纳米颗粒作为阴极修饰层的器件, 开路电压(V_OC)达到0.89 V, 并且器件的PCE 提高了4倍多. 此外, 不同电极修饰材料和倒置结构的引入可以有效防止器件串连电阻的升高, 从而提高器件的稳定性. 关键词： 倒置型 阴极修饰层 有机太阳能电池 稳定性     

空间用GaInP/GaAs/In0.3Ga0.7 As(1 eV)倒装三结太阳电池研制

采用阶变缓冲层技术 (step-graded) 外延生长了具有更优带隙组合的倒装GaInP/GaAs/In_0.3Ga_0.7As(1.0 eV) 三结太阳电池材料, TEM和HRXRD测试表明晶格失配度为2%的In_0.3Ga_0.7As 底电池具有较低的穿透位错密度和较高的晶体质量, 达到太阳电池的制备要求. 通过键合、剥离等工艺制备了太阳电池芯片. 面积为 10.922 cm² 的太阳电池芯片在空间光谱条件下转换效率达到32.64% (AM0, 25 ℃), 比传统晶格匹配的 GaInP/GaAs/Ge(0.67 eV) 三结太阳电池的转换效率提高3个百分点. 关键词： 太阳电池 三结 倒装结构     

A new proposal for Si tandem solar cell: Significant efficiency enhancement in 3C–SiC/Si

In order to considerable enhancement of the efficiency of silicon solar cells, in this paper, for the first time, we present a new proposal for silicon based tandem solar cells. For investigation of this idea, we have evaluated the characteristics of 3C–SiC/Si crystalline tandem solar cells connected series by a tunneling junction, under air mass 1.5 global irradiance spectrums. A 2D simulation including the effects of surface passivation, back surface field (BSF), and carrier tunneling have been performed to obtain the optical and electrical characteristics of single junction silicon, 3C–SiC, and finally the tandem cells. The obtained data illustrate that the best design parameters considering the experimental limitations can be obtained. High energy conversion efficiency for the proposed structure of 26.09% has been achieved for 3C–SiC/Si tandem structure driven by 20.49% and 17.86% conversion efficiencies of single junction Si and 3C–SiC solar cells, respectively. Our results justifies that the higher conversion efficiency of the Si-based tandem structure compared with 3C–SiC and Si cells stems from enhancement of open circuit voltage and fill factor parameter at the hands of decrease in short circuit current limited by the top 3C–SiC cell.     

微晶硅锗薄膜作为近红外光吸收层在硅基薄膜太阳电池中的应用

采用射频等离子体增强化学气相沉积技术,制备了具有一定晶化率不同Ge含量的氢化微晶硅锗(μcSi1-xGex:H)薄膜.通过Ⅹ射线荧光谱、拉曼光谱、X射线衍射谱、傅里叶红外谱、吸收系数谱和电导率的测试,表征了μc-Si_(1-x)Ge_x:H的材料微结构随Ge含量的演变.研究表明:提高Ge含量可以增强μc-Si_(1-x)Ge_x:H薄膜的吸收系数.将其应用到硅基薄膜太阳电池的本征层中可以有效提高电池的短路电流密度(J_(sc)).特别是在电池厚度较薄或陷光不充分的情况下,长波响应的提高会更为显著.应用ZnO衬底后,在Ge含量分别为9%和27%时,μc-Si_(1-x)Ge_x:H太阳电池的转换效率均超过了7%.最后,将μc-Si_(1-x)Ge_x:H太阳电池应用在双结叠层太阳电池的底电池中,发现μc-Si_(0.73)Ge_(0.27):H底电池在厚度为800 nm时即可得到比1700 nm厚微晶硅(μc-Si:H)底电池更高的长波响应.以上结果体现μc-Si_(1-x)Ge_x:H太阳电池作为高效近红外光吸收层,在硅基薄膜太阳电池中应用的前景.     

高效无空穴传输层碳基钙钛矿太阳能电池的制备与性能研究

碳基钙钛矿太阳能电池因稳定性高、成本低廉而备受关注,但由于钙钛矿与碳电极之间能级匹配度不高,界面阻力大而导致效率不及金属基钙钛矿太阳能电池.本文制备了碳基无空穴传输层FTO/c-TiO₂/m-TiO₂/CH₃NH₃PbI₃/Carbon电池结构.通过对介孔二氧化钛层、钙钛矿层厚度进行优化,并对钙钛矿的薄膜形貌及钙钛矿激发电子寿命、可见光吸收度、载流子的提取与分离等进行深度分析,讨论了电池效率提升的内在机理.当介孔氧化钛层和钙钛矿层达到最优厚度时,钙钛矿太阳能电池获得了开路电压（V_oc）为0.93 V、电流密度（J_sc）为21.75 mA/cm²、填充因子为55%、光电转化效率达到11.11%.同时对电池进行了稳定性研究,在室温湿度为40%–50%的条件下放置15 d电池性能依旧稳定保持原来的95%,优于金属基钙钛矿太阳能电池,从而为碳电极钙钛矿太阳能电池的商业化发展提供了可能.     

聚合物和小分子叠层结构有机太阳电池研究

旋涂法和真空蒸发结合制备了MEH-PPV:PCBM体异质结和CuPc/C60有机小分子叠层有机太阳电池. 测试结果表明:MEH-PPV:PCBM有源层和Ag中间层分别为50 nm和0.5 nm时,与同等厚度有源层的MEH-PPV:PCBM体异质结器件和CuPc/C60小分子器件相比,叠层器件太阳能转换效率大大提高,达到了1.86%. 关键词： 聚(2-甲氧基,5-(2-乙基-乙氧基)-对苯乙炔) 铜酞菁 叠层结构 太阳电池     

硒化锑薄膜太阳电池的模拟与结构优化研究

采用wx-AMPS模拟软件对硒化锑(Sb_2Se_3)薄膜太阳电池进行建模仿真,将CdS, ZnO和Sn02的模型应用到Sb_2Se_3太阳电池的电子传输层中.结果显示,应用CdS和ZnO都能实现较高的器件性能,并发现电子传输层电子亲和势(Xe-ETL)的变化能够调节Sb_2Se_3太阳电池内部的电场分布,是影响器件性能的关键参数之一.过高或者过低的Xe-ETL都会使电池的填充因子降低,导致电池性能劣化.当Xe-ETL为4.2eV时,厚度为0.6μm的Sb_2Se_3太阳电池取得了最优的7.87%的转换效率.应用优化好的器件模型,在不考虑Sb_2Se_3层缺陷态的理想情况下,厚度为3μm的Sb_2Se_3太阳电池的转换效率可以达到16.55%(短路电流密度J_(SC)=34.88 mA/cm~2、开路电压V_(OC)=0.59 V、填充因子FF=80.40%).以上模拟结果表明,Sb_2Se_3薄膜太阳电池在简单的器件结构下就能够获得优异的光电性能,具有较高的应用潜力.     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

基于BiFeO_3/ITO复合膜表面钝化的黑硅太阳电池性能研究

采用金属银辅助化学刻蚀法在制绒的硅片表面刻蚀纳米孔形成微纳米双层结构,以期获得高吸收率的太阳能电池用黑硅材料.鉴于微纳米结构会在晶硅表面引入大量的载流子复合中心,利用磁控溅射技术在黑硅太阳电池表面制备了BiFeO_3/ITO复合膜,并对其表面性能和优化效果进行了探索.实验制备的具有微纳米双层结构的黑硅纳米线长约180—320 nm,在300—1000 nm波长范围内入射光反射率均在5%以下.沉积BiFeO_3/ITO复合薄膜后的黑硅太阳能电池反射率略有提高,但仍然具有较强的光吸收性能;采用BiFeO_3/ITO复合膜的黑硅太阳能电池开路电压和短路电流密度分别由最初的0.61 V和28.42 mA/cm~2提升至0.68 V和34.57 mA/cm~2,相应电池的光电转化效率由13.3%上升至16.8%.电池综合性能的改善主要是因为沉积BiFeO_3/ITO复合膜提高了电池光生载流子的有效分离,从而增强了黑硅太阳电池短波区域的光谱响应,表明具有自发极化性能的BiFeO_3薄膜对黑硅太阳能电池的表面性能可起到较好的优化作用.     

Numerical study of InGaN tandem solar cells with intermediate bands

Theoretical investigations of InGaN tandem solar cells with intermediate bands (IBs) have been conducted through calculating the diode equation taking into account the radiative and nonradiative recombination currents. The calculated maximum ef?ciencies of the double‐junction cell with one IB in each subcell are 57.85% and 68.37% under AM1.5G one‐sun and 46000‐sun illuminations, respectively. It has also been observed that the combined device with the top‐cell bandgaps of 2.9–3.4 eV (2.6–3.4 eV for full concentration) may have an opportunity to realize the application of over 50% efficiency. We suggest that the optimized width of the IB layer be designed in the range of 1–6 μm if its absorption coefficient is 10⁴–10⁵ cm^–1 in the IB region.