Growth and optical properties of wurtzite-type CdS nanocrystals

This paper reports wurtzite-type CdS nanostructures synthesized via a hydrothermal reaction route using dithiol glycol as the sulfur source. The reaction time was found to play an important role in the shape of the CdS nanocrystals: from dots to wires via an oriented attachment mechanism. This work has enabled us to generate nanostructures with controllable geometric shapes and structures and thus optical properties. The CdS nanostructures show a hexagonal wurtzite phase confirmed by X-ray diffraction and show no evidence for a mixed phase of cubic symmetry. The Raman peak position of the characteristic first-order longitudinal optical phonon mode does not change greatly, and the corresponding full width at half-maximum is found to decrease with the CdS shape, changing from nanoparticles to nanowires because of crystalline quality improvement. The photoluminescence measurements indicate tunable optical properties just through a change in the shape of the CdS nanocrystals; i.e., CdS nanoparticles show a band-edge emission at approximately 426 nm in wavelength, while the CdS nanowires show a band-edge emission at approximately 426 nm as well as a weaker trap-state green emission at approximately 530 nm in wavelength. These samples provide an opportunity for the study of the evolution of crystal growth and optical properties, with the shape of the nanocrystals varying from nearly spherical particles to wires.     

Photoluminescence resulting from semiconductor-metal solid solution observed in one-dimensional semiconductor nanostructures

A narrow band photoluminescence (PL) emission peak resulting from CdS-Au solid solution was observed when growing one-dimensional nanostructures of CdS via the vapor-liquid-solid mechanism by using Au as the catalyst. This emission peak was located at 680 nm, a wavelength longer than the near band edge emission of CdS at 520 nm, and was shown not to be caused by the usual trap states of CdS which lead to a broad band emission. Here, the one-dimensional nanostructures of CdS were grown in a simple, low-temperature (360 degrees C) metal-organic chemical vapor deposition process with a single source precursor of CdS. Straight nanowires of diameter 50-70 nm and wormlike nanorods of diameter 100-200 nm were obtained. Both the upper and lower portions of the nanorods/nanowires possessed single crystallinity as judged from the corresponding high-resolution transmission electron microscopy images and selected area electron diffraction data. This work demonstrates the feasibility of adjusting PL emission peaks of optoelectronic semiconductors through alloying with metals.     

AC Electrochemical Deposition of CdS Nanowire Arrays

Since the successful growth of carbon nanotubes, one-dimensional materials have been a focused research field both because of their fundamental importance and the wide-ranging potential applications in nano devices. Many approaches are used to fabricate nanowires, such as crystal growth. In order to obtain nanowires whose growth is more easily controlled, electrochemical synthesis in a template is taken as one of the most efficient methods. To date, Co, Fe, Ni, CuCo1-3 and other nanowire arrays have been fabricated successfully by electrodepositing corresponding metal ion into the porous aluminum oxide (PAO) membrane or other non-magnetic materials. Cadmium sulfide(CdS), as one of the most important semiconductor material, is a n-type semiconductor. The ability to fine tune their fundamental electronic and optical properties by simply varying the cruster size, rather than composition, makes them highly attractive for a variety of possible application. In this paper, we report our work of fabricating CdS nanowire arrays based on AC electrolysis into the pores of an anodic aluminum oxide(AAO), the structure and morphology were characterized by XRD and TEM.     

Control of the ZnO nanowires nucleation site using microfluidic channels

We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.     

利用牛血清蛋白合成CdS纳米棒和网状纳米线

采用简单易控、对环境友好的矿化方法, 利用牛血清蛋白(BSA)做模板, 通过Cd2+与硫代乙酰胺(TAA)反应制备了形貌均一的CdS纳米棒和网状纳米线. 分别采用透射电子显微镜(TEM)、X射线能谱(EDS)、X射线衍射(XRD)、荧光(PL)发射谱和导电原子力显微镜(C-AFM)等方法对不同实验温度下制备的CdS样品的结构形貌、成分组成和光学性质及微区电子传输行为进行了表征. 结果表明: 在实验反应温度为20 ℃时, 得到的产物为单分散性好的CdS 纳米棒, 长度为250 nm, 直径为30 nm; 在50 ℃时, 得到网状CdS纳米线, 其长度为2-3 μm; CdS纳米棒和网状纳米线均为立方相闪锌矿结构. 荧光性质的测试表明, CdS纳米棒和网状纳米线具有优良的荧光性能, 电流-电压(I-V)特性的表征表明CdS纳米线具有很好的电导特性.     

Solvothermal synthesis and characterization of uniform CdS nanowires in high yield

Large-scale CdS nanowires with uniform diameter and high aspect ratios were synthesized using a simple solvothermal route that employed CdCl₂ and S powder as starting materials, ethylenediamine (en) as the solvent. X-ray diffraction (XRD) pattern and transmission electron microscopy (TEM) images show that the products are hexagonal structure CdS nanowires with diameter of 40 nm and length up to 10 μm. Selected area electron diffraction (SAED) and high resolution TEM (HRTEM) studies indicate the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by optical absorption spectra and photoluminescence spectra. Based on the results of contrastive experiments, it is found that the sulfur source and the solvent play significant roles in the formation of uniform nanowires. A possible formation mechanism of nanowires is discussed.     

Growth of long CdS nanowires using a carboxylic acid-functionalized self-assembled monolayer as substrate

We report a novel result that long CdS nanowires with typical width of 70–80 nm and length ranging from several micrometers to tens of micrometers can be obtained by the in situ growth on substrate of a carboxylic acid-functionalized self-assembled monolayer (SAM), which formed from a rigid aromatic molecule on mica surfaces. The as-grown CdS nanowires were characterized by X-ray photoelectron spectroscopy (XPS), Transmission electron microscopy (TEM) and Energy-dispersive X-ray spectroscopy (EDS). A possible mechanism that accounts for the formation of the one-dimensional (1D) nanowires was also discussed.     

Band-gap engineering of semiconductor nanowires through composition modulation

Alloyed ternary CdS(1-x)Se(x) nanowires were synthesized by template-assisted electrodeposition, in which the ratio of S to Se in the nanowires was controlled by adjusting the relative amounts of the starting materials. Higher-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) showed that the alloyed ternary CdS(1-x)Se(x) nanowires are highly crystalline, and no phase-separated Cd was observed in these nanowires. Optical measurements indicated that the band-gap engineering can be realized in these CdS(1-x)Se(x) nanowires through modulating the composition of S and Se. With broadly tunable optical and electrical properties, these alloyed nanowires could be used in color-tuned nanolasers, biological labels, and nanoelectronics.     

Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory.     

聚吡咯/硫化镉核壳纳米线的制备及整流特性

以无机多孔氧化铝膜为模板,利用气相沉积和原位电化学沉积方法成功地制备了有机-无机杂化聚吡咯/硫化镉核壳纳米线;采用扫描电子显微镜和透射电子显微镜分析了聚吡咯/硫化镉核壳纳米线的表面形貌和微结构.结果表明,内部的聚吡咯纳米线紧紧依附在外部的硫化镉纳米管中,并且硫化镉纳米管被聚吡咯全部填充.与此同时,在聚吡咯/硫化镉核壳纳米线中,外部硫化镉壳与内部聚吡咯核之间存在电荷转移;聚吡咯和硫化镉之间形成有机-无机杂化的P-N界面,从而导致单根聚吡咯/硫化镉核壳纳米线显示出不同于外部壳和内部核的整流特性.     

Architectural control syntheses of CdS and CdSe nanoflowers, branched nanowires, and nanotrees via a solvothermal approach in a mixed solution and their photocatalytic property

Wurtzite CdS and CdSe nanostructures with complex morphologies such as urchin-like CdS nanoflowers, branched nanowires, and fractal nanotrees can be produced via a facile solvothermal approach in a mixed solution made of diethylenetriamine (DETA) and deionized water (DIW). The morphologies of CdS and CdSe nanocrystals can be easily controlled via tuning the volume ratio of DETA and DIW. Urchin-like CdS nanoflowers made of CdS nanorods are in a form of highly ordered hierarchical structures, while the nanowires are branched nanowires, and the fractal CdS nanotrees are a buildup of branched nanopines. The results demonstrated that solvothermal reaction in a mixed amine/water can access a variety of complex morphologies of semiconductor materials. The photocatalytic activity of CdS particles with different morphologies has been tested by the degradation of acid fuchsine under both UV and visible light, showing that the as-prepared branched CdS nanowires exhibit high photocatalytic activity for degradation of acid fuchsine.     

Synthesis of CdS and ZnS nanowires using single-source molecular precursors

Single-source molecular precursors were used to synthesize II-VI compound semiconductor nanowires for the first time. Cadmium sulfide and zinc sulfide nanowires were prepared using cadmium diethyldithiocarbamate, Cd(S2CNEt2)2, and zinc diethyldithiocarbamate, Zn(S2CNEt2)2, respectively, as precursors in a gold nanocluster-catalyzed vapor-liquid-solid growth process. High-resolution transmission electron microscopy studies show that the CdS and ZnS nanowires are single-crystal wurtzite structures with stoichiometric compositions. In addition, photoluminescence measurements demonstrate that these nanowires exhibit high-quality optical properties. The applicability of our approach to the synthesis of other compound and alloy semiconductors nanowires as well as nanowire heterostructures of these materials is discussed.     

One-step chemical vapor growth of Ge/SiC(x)N(y) nanocables

Single-step synthesis of one-dimensional Ge/SiCxNy core-shell nanocables was achieved by chemical vapor deposition of the molecular precursor [Ge{N(SiMe3)2}2]. Single crystalline Ge nanowires (diameter approximately 60 nm) embedded in uniform SiCxNy shells were obtained in high yields, whereby the growth process was not influenced by the nature of substrates. The shell material exhibited high oxidation and chemical resistance at elevated temperatures (up to 250 degrees C) resulting in the preservation of size-dependent semiconductor properties of germanium nanowires, such as intact transport of charge carriers and reduction of energy consumption, when compared to pure Ge nanowires.     

Stimulated emissions in aligned CdS nanowires at room temperature

Aligned CdS nanowires (NWs) were obtained through a simple thermal evaporation process with highly active CdS nanoparticles as the evaporation source. These NWs show prominent optical waveguides behavior under a continuous-wave (CW) laser excitation. Excitation intensity-dependent photoluminescence (PL) measurements show that these NWs exhibited both broad and supernarrow stimulated emission (lasing) under intense pulse optical excitation at room temperature. Raman scattering and time-resolved PL measurements were used to investigate the optical properties. The results indicated that the stimulated emission in these NWs involves the electron-hole plasma (EHP) and Farby-Perot (F-P) optical resonant processes at room temperature.     

Epitaxial heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires

Epitaxial semiconducting heterostructures: side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowires were grown via a simple two-stage thermal evaporation of mixed SiO and ZnS or SiO and ZnSe powders under a precise temperature control. Each nanowire had a uniform diameter of 40-120 nm and length ranging from several to several tens of micrometers. Subnanowires of Si, ZnS, and ZnSe within them had a diameter of 20-50, 40-60, and 20-50 nm, respectively. The optical property (nanoscale cathodoluminescence) was also investigated from these new structures. It is proposed that the Si nanowires formed through disproportionation of SiO to Si in the first evaporation stage and then served as one-dimensional nanoscale substrates (or templates) for an epitaxial growth of ZnS or ZnSe nanowires in the following thermal evaporation of ZnS or ZnSe powders. The present results suggest that the simple method might be useful for the synthesis of many other heterostructures containing Si and II-VI or III-V semiconducting composite nanowires to meet the growing demands of nanoscale science and technology.     

P3HT/CdS/TiO2/ZnO一维有序核壳式纳米棒阵列的构制及其在杂化太阳电池中的应用研究

采用恒电位法在铟锡氧化物导电玻璃(ITO)上制备了高度有序一维ZnO纳米棒阵列,将ZnO纳米棒阵列在TiO2溶胶中采用提拉法制备出了一维TiO2/ZnO核壳式纳米棒阵列.在一维TiO2/ZnO核壳式纳米棒阵列上电沉积CdS纳米晶得到一维CdS/TiO2/ZnO核壳式纳米棒阵列,然后在一维CdS/TiO2/ZnO核壳式纳米棒阵列上电沉积聚3-己基噻吩(P3HT)薄膜得到P3HT/CdS/TiO2/ZnO核壳式纳米结构薄膜.以该纳米结构薄膜电极为光阳极制备出新型纳米结构杂化太阳电池,研究了该类电池的光电转换性能,初步探讨了该类电池的工作机理.     

Enhanced visible-light-driven photocatalytic activities of 0D/1D heterojunction carbon quantum dot modified CdS nanowires

Zero-dimensional carbon dots (0D C-dots) and one-dimensional sulfide cadmium nanowires (1D CdS NWs) were prepared by microwave and solvothermal methods, respectively. A series of heterogeneous photocatalysts that consisted of 1D CdS NWs that were modified with 0D C-dots (C-dots/CdS NWs) were synthesized using chemical deposition methods. The mass fraction of C-dots to CdS NWs in these photocatalysts was varied. The photocatalysts were characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and ultraviolet-visible spectroscopy. Their photocatalytic performance for the spitting of water and the degradation of rhodamine B (RhB) under visible light irradiation were investigated. The photocatalytic performance of the C-dots/CdS NWs was enhanced when compared with that of the pure CdS NWs, with the 0.4% C-dots/CdS NWs exhibiting the highest photocatalytic activity for the splitting of water and the degradation of RhB. The enhanced photocatalytic activity was attributed to a higher carrier density because of the heterojunction between the C-dots and CdS NWs. This heterojunction improved the electronic transmission capacity and promoted efficient separation of photogenerated electrons and holes.     

Templated Synthesis of CdS/PAN Composite Nanowires under Ambient Conditions

CdS/PAN (polyacrylonitrile) composite nanowires were prepared by templated synthesis under ambient conditions, using a 4 : 1 (v/v) distilled water-isopropyl alcohol solvent mixture and Na(2)S(2)O(3) as sulfur source. Transmission electron microscopy images showed typical CdS/PAN nanowires with diameters less than 6 nm and lengths from 200 nm to 1 μm. CdS/PAN nanowires were also characterized by FT-infrared spectra (FTIR), X-ray powder diffraction (XRD) patterns, and UV-vis spectra. It is found that the feed mole ratio of CdCl(2) to AN exerts a significant influence on the formation and morphology of CdS/PAN nanowires. In addition, possible mechanism of the reactive process was presented. Copyright 2000 Academic Press.     

ZnO/CdS复合材料的合成与可见光催化性能

采用喷雾辅助气相沉积法在水热法合成的ZnO纳米线上沉积CdS纳米颗粒。采用X射线衍射仪（XRD）、激光拉曼仪（Raman）、扫描电镜（SEM）、透射电镜（TEM）、X射线光电子能谱分析谱（XPS）和紫外可见漫反射光谱等测试手段对复合光催化剂进行表征。结果表明,3~10 nm的CdS纳米粒子修饰在直径约为100 nm ZnO纳米线的表面。XPS和Raman表明复合材料中ZnO和CdS之间存在化学相互作用。可见光催化降解罗丹明B实验结果表明ZnO/CdS复合材料的催化性能优于单相CdS或ZnO,沉积时间为30 s合成的ZnO/CdS速率常数分别是CdS和ZnO的2.91和4.03倍,且具有较高的稳定性。ZnO/CdS复合材料光催化性能增强的可能原因为光吸收范围的拓展和光生载流子分离效率的提高。     

一种新的电化学方法制备CdS纳米线阵列

用一种新的电化学方法在多孔氧化铝模板中制备了CdS纳米线阵列体系,并用XRD、TEM对样品进行表征,结果显示CdS纳米线为立方相和六方相的多晶混合结构,对沉积机理进行了讨论.荧光光谱测量显示CdS纳米线阵列体系有三个强的紫外发光带和一个黄绿发光带.该文所使用的方法可以用来在氧化铝模板中制备其它材料的纳米线阵列体系.