P3HT/CdS/TiO2/ZnO一维有序核壳式纳米棒阵列的构制及其在杂化太阳电池中的应用研究

采用恒电位法在铟锡氧化物导电玻璃(ITO)上制备了高度有序一维ZnO纳米棒阵列,将ZnO纳米棒阵列在TiO2溶胶中采用提拉法制备出了一维TiO2/ZnO核壳式纳米棒阵列.在一维TiO2/ZnO核壳式纳米棒阵列上电沉积CdS纳米晶得到一维CdS/TiO2/ZnO核壳式纳米棒阵列,然后在一维CdS/TiO2/ZnO核壳式纳米棒阵列上电沉积聚3-己基噻吩(P3HT)薄膜得到P3HT/CdS/TiO2/ZnO核壳式纳米结构薄膜.以该纳米结构薄膜电极为光阳极制备出新型纳米结构杂化太阳电池,研究了该类电池的光电转换性能,初步探讨了该类电池的工作机理.     

纳米晶ZnO∶Er3+的制备及其室温上转换发射

采用化学沉淀法成功地将Er3+掺杂到纳米晶ZnO基质晶格中, 所制备的纳米晶ZnO∶Er3+粉体具有强室温发射现象, 并观测到其室温上转换发射现象. 纳米晶ZnO∶Er具有较高的上转换效率, 用978 nm激光激发, 肉眼可观察到绿色发光. 本文制备的纳米晶ZnO∶Er3+粉体发光材料不同于Er掺杂的体材料ZnO粉体.     

Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction

IntroductionIt is well known that ZnO, a wide band-gap semi-conductor, is a promising material because of its wideband gap of 3.37 eV at room temperature(RT) and itslarge excitonic binding energy of about60 meV; it canbe used to prepare high-efficiency ul…     

低温一步液相法合成ZnO纳米棒

近年来．一维纳米结构如纳米线、纳米棒、纳米带等．由于其新颖的物理化学性质及其在光学或电学器件上的广泛应用前景．已成为研究开发的热点。特别是氧化锌（ZnO）这种宽禁带（3．37eV）、高激子束缚能（60meV）的功能性半导体材料。基于它在光电子器件、太阳能电池、传感器、二极管、场发射显示器等领域潜在的重要应用价值，各国科学工作者都给予极大的研究热情．开发出了许多合成方案制备一维纳米ZnO结构，如水热法，模板法同，微乳液法阐，CVD法，热蒸发法，MOVPE法，电化学沉积法等。     

一维有序ZnO纳米棒阵列的制备和优化

以氧化铟锡透明导电膜玻璃(ITO)做载体,先在室温下采用浸渍-提拉法制备出ZnO纳米晶作为种子层,再结合低成本的水热生长法合成了一维有序的ZnO纳米棒阵列.结合X射线衍射(XRD)、扫描电子显微镜(SEM)和能量色散谱仪(EDS)表征,研究了前驱液浓度、溶胶陈化时间、种子层提拉次数、水热生长时间和次数等5种因素对ZnO纳米棒的结构及形貌的影响.研究结果表明, ZnO纳米棒阵列的长度和直径会随着前驱液的浓度和溶胶陈化时间以及水热生长时间的延长而增加.当前驱液浓度为0.5 mol·L^-1时,陈化时间为24 h,浸渍-提拉3次,水热反应3次,每次反应时间为150 min时,可得到一维有序的ZnO纳米棒阵列.     

纳米结构ZnO在TiO_2薄膜上的电化学沉积及其表征

在三电极体系中,以硝酸锌水溶液作为电解液,采用阴极还原电沉积法成功实现了一维纳米结构ZnO阵列在TiO2纳米粒子/ITO导电玻璃薄膜基底上的沉积,并通过XRD、SEM、EDS和PL光谱等方法对样品进行了表征.重点研究了薄膜基底、电解液浓度、沉积时间、六次亚甲基四胺(HMT)的引入对ZnO沉积及其发光性质的影响.结果显示:与ITO玻璃基底相比,ZnO更易于在TiO2纳米粒子薄膜上实现电化学沉积.ZnO属于六方晶系的铅锌矿结构,并且沿着c-轴方向表现出明显的择优化生长,以形成垂直于基底的ZnO纳米棒阵列.延长沉积时间、增加电解液浓度和引入一定量的HMT等均对ZnO的生长有促进作用,进而使其纳米棒的结晶度和取向程度提高,进而解释了所得的薄膜分别约在375和520nm处表现出ZnO的强而窄的带边紫外光发射峰和弱而宽的表面态绿光发射带.     

一步化学溶液法合成ZnO纳米管

以Zn(Ac)₂和NaOH为原料,采用一步化学溶液法,通过同时添加两种表面活性剂十二烷基苯磺酸钠(SDBS)和十二烷基硫酸钠(SDS),制备出形貌规则、结晶良好的一维ZnO纳米管。用X-射线衍射(XRD)、扫描电镜(SEM)、高分辨透射电镜(HRTEM)、选区电子衍射(SAED)和荧光光谱(PL)分别对产品的结构、形貌和发光性质进行了表征。结果表明,ZnO纳米管为沿c轴方向择优生长的六方晶型纤锌矿结构,管外径为720～780 nm,管壁厚约120 nm,平均长度为1.5 μm,在紫外和可见光区有不同程度的荧光发射。本文初步探讨了ZnO纳米管的形成机理,研究了表面活性剂、溶液碱度等对生成产物的影响。     

ZnO荧光粉中的紫外发射和绿色发射之间的关系

通过在低氧分压和真空中热处理ZnO粉末, 获得了ZnO荧光粉. ZnO荧光粉有两个发射谱带, 分别位于380 nm(紫外)和510 nm(绿色). 紫外谱带对应于ZnO中的激子发射, 是一个单中心发光过程；绿色谱带是一个复合发光过程, 与ZnO中的本征缺陷相关, 如氧空位、锌空位等. 实验表明, 高密度的激发条件有利于紫外发射, 而低氧分压下的热处理有利于提高绿色发射谱带的强度. 研究结果还表明, 与紫外发射相联系的激子可向与本征缺陷相联系的绿色发光中心传递能量, 这种传递可能是通过激子扩散实现的.     

水溶性ZnO/氨丙基-硅氧烷量子点的合成与荧光特性

利用溶胶-凝胶法在非水体系中合成出ZnO量子点,并用3-氨丙基三乙氧基硅烷(APTES)对其进行包覆,制得水溶性ZnO/氨丙基-硅氧烷量子点(ZnO-ASQDs)。通过实验确定最佳包覆条件:t=60℃,T=30min,nSi:nZn=1:1,VPEG/Vtotal=1/9。合成的ZnO量子点分别在348与512nm处有2个荧光发射峰,且激发区域较宽(220~360nm)。经过APTES包覆,ZnO量子点荧光发射强度明显增强,同时具有良好的水溶性与荧光稳定性,稳定时间可达60d之久。由Brus公式计算表明,包覆层对ZnO量子点不但改性还起到保护作用,抑制其团聚。经XRD与TEM证实,ZnO-ASQDs具有核壳结构,ZnO核平均粒径为6nm,整体粒径约为20nm。此外,通过调整ZnO核的粒径可制备出不同荧光颜色的ZnO-ASQDs。     

双盘状ZnO的可控制备

采用水热法制备了形貌可控、 尺寸均一的双盘状ZnO. X射线粉末衍射(XRD)、 扫描电子显微镜(SEM)及透射电子显微镜(TEM)等测试结果表明, 制备的ZnO具有六方纤锌矿结构, 由2个直径约为4 μm, 厚度约为600 nm的圆盘复合而成. 考察了反应温度和乙酸锌与柠檬酸钾的摩尔比对产物形貌与尺寸的影响, 实现了双盘状ZnO的可控合成, 并初步探讨了其形成机理. 荧光光谱显示, 双盘状ZnO的紫外发射峰半高宽约为10 nm, 比块体ZnO的紫外发射峰半高宽(18 nm)窄, 表明双盘状ZnO具有更好的光学特性.     

The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films

Highly oriented ZnO nanorod arrays with controlled diameter and length, narrow size distribution and high orientation consistency have been successfully prepared on ITO substrates at different growth temperatures by using a simple hydrothermal method. XRD results indicate that the nanorods are high-quality single crystals growing along [001] direction with a high consistent orientation perpendicular to the substrate. SEM images show that the nanorods have average diameters of about 30-70 nm by changing growth temperature. The thin films consisting of ZnO nanorods with controlled orientation onto ITO substrates allow a more efficient transport and collection of photogenerated electrons through a designed path. For a sandwich-type cell, the relatively high overall solar energy conversion efficiency reaches about 2.4% when the growth temperature is at 95 °C.     

ZnO纳米棒阵列在TiO2介孔薄膜上的生长及其表征

通过低温水热法成功地将ZnO纳米棒阵列定向生长在了介孔锐钛矿TiO2纳米晶薄膜上,并主要利用X射线衍射、场发射扫描电子显微镜和光致发光光谱等对其进行了表征。所制备的纳米棒具有六边形的端面,纳米棒的尺寸及端面边长分布范围窄,并且沿c轴方向(002)表现出了明显的择优化生长。此外,相比于玻璃基底或TiO2纳米颗粒薄膜,生长在介孔TiO2薄膜上的ZnO纳米棒阵列表现出了较好的取向生长,表明基底的表面结构和组成对ZnO纳米棒阵列的生长有显著的影响。根据基底有序的多孔结构,讨论了纳米棒阵列可能的生长机理。所得到的ZnO纳米棒阵列在室温下分别表现出了以370 nm为中心的强近紫外光和以530 nm为中心的弱绿光两条荧光谱带。     

ZnO纳米棒阵列的同步法制备及其PL性能研究

在较低温度下，采用化学法在Zn片和玻璃片上同步制备了ZnO纳米棒阵列。利用XRD、FESEM和HRTEM对样品进行了表征，并且通过光致发光谱研究了阵列的光致发光(PL)性能。结果表明，ZnO纳米棒阵列较为致密、取向性较好。纳米棒为六方纤锌矿相，沿c轴生长，平均直径约为60 nm。同步法制备的2种ZnO纳米棒阵列均具有较好的紫外和橙红色发光性能，但发光特性却存在一定差异，这可能主要是由于2种阵列中纳米棒的缺陷含量不同所致。     

基底对电沉积制备ZnO纳米棒阵列的影响

采用恒电位电沉积方法, 在未经修饰的ITO导电玻璃基底上通过控制实验条件制备出不同形貌的纳米ZnO结构, 而在经过ZnO纳米粒子膜修饰后的ITO导电玻璃基底上, 制备出透明、高取向、粒径小于30 nm的ZnO纳米棒阵列. 用扫描电子显微镜(SEM)、X射线衍射(XRD)以及透射光谱对制备出的ZnO纳米棒阵列的结构、形貌和透明性进行了表征. 测试结果表明, ZnO纳米棒阵列的平均直径为21 nm, 粒径分布窄, 约18～25 nm, 择优生长取向为[001]方向, 垂直于基底生长. 当入射光波长大于400 nm时, ZnO纳米棒阵列的透光率大于95%.     

Surfactant-assisted route to synthesize well-aligned ZnO nanorod arrays on sol-gel-derived ZnO thin films

Anisotropic growth of ZnO nanorod arrays on ZnO thin films was achieved at a temperature of 90 degrees C by a surfactant-assisted soft chemical approach with control over size and orientation. ZnO thin films with c-axis preferred orientation had been achieved by the sol-gel technique. Lengths, diameters, and the degree of alignment of the ZnO nanorods were controlled by changing the experimental parameters. It was observed that the surfactant was essential to restrict the lateral growth of the nanorods, whereas the pH level of the reaction medium controlled the length of the nanorods. On the other hand, the orientation of the nanorods depended on the crystalline orientation of the film as well as the pH of the reaction medium. Room-temperature photoluminescence studies revealed that the ZnO nanorods with the best alignment exhibited the best emission property. The ZnO nanorods exhibited a strong UV emission peak at approximately 3.22 eV, ascribed to the band-edge emission. The field emission studies of the well-aligned nanorod arrays exhibited a low turn-on field of 1.7 V/microm to get an emission current density of 0.1 microA/cm(2).     

化学溶液沉积法制备单分散氧化锌纳米棒阵列

在由溶胶凝胶法制备的纳米ZnO薄膜基底上, 采用化学溶液沉积法制备了单分散、高度取向的ZnO纳米棒阵列膜. 通过控制纳米ZnO薄膜的制备工艺, 可以调节氧化锌纳米棒的直径. 利用FESEM, TEM, HRTEM, SAED和XRD表征了氧化锌纳米棒阵列的形貌和晶体结构. ZnO纳米棒的室温PL谱具有很高的紫外带边发射峰, 在可见光波段无发射峰, 表明该方法制备的ZnO纳米棒晶体结构完整, 晶体中O空位的浓度很低.     

ZnO纳米棒薄膜的湿化学法制备及光致发光特性

在80 ℃水浴下, 采用简易的湿化学法在不导电玻璃基底上制备了ZnO纳米棒阵列, 利用X射线衍射仪(XRD)和场发射扫描电镜(FE-SEM)对样品的结构形貌进行了表征. 结果表明, 晶化30 min所得产物为六方纤锌矿相的ZnO纳米棒, 直径大约为80~90 nm. 为了分析不同的低温退火温度和退火气氛对其光致发光性能的影响, 研究了ZnO纳米棒薄膜在不同的后处理条件下的光致发光谱(PL). 实验结果表明, 在O₂气氛下于450 ℃退火1 h后, ZnO纳米棒薄膜的红光发射(约650 nm)强度相对在空气和5%H₂/95%N₂气氛下退火的样品变得更强, 而且该样品的激发波长范围(200~370 nm)与近紫外发光二极管(LEDs)的发射波长范围(350~420 nm)匹配得很好.     

Synthesis of ZnO nanorods and their application in quantum dot sensitized solar cells

ZnO nanorod thin films of different thicknesses and CdS quantum dots have been prepared by chemical method. X-ray diffraction pattern reveals that the CdS quantum dot and ZnO nanorods are of hexagonal structure. Field emission scanning electron microscope images show that the diameter of hexagonal shaped ZnO nanorods ranges from 110 to 200 nm and the length of the nanorod vary from 1.3 to 4.7 μm. CdS quantum dots with average size of 4 nm have been deposited onto ZnO nanorod surface using successive ionic layer adsorption and reaction method and the assembly of CdS quantum dot with ZnO nanorod has been used as photo-electrode in quantum dot sensitized solar cells. The efficiency of the fabricated CdS quantum dot-sensitized ZnO nanorod-based solar cell is 1.10 % and is the best efficiency reported so far for this type of solar cells.     

Preparation and Photoluminescence of ZnO Comb-Like Structure and Nanorod Arrays

A large quantity of Zinc oxide (ZnO) comb-like structure and high-density well-aligned ZnO nanorod arrays were prepared on silicon substrate via thermal evaporation process without any catalyst. The morphology, growth mechanism, and optical properties of the both structures were investigated using XRD, SEM, TEM and PL. The resulting comb-teeth, with a diameter about 20 nm, growing along the 0001 direction have a well-defined epitaxial relationship with the comb ribbon. The ZnO nanorod arrays have a diameter about 200 nm and length up to several micrometers growing approximately vertical to the Si substrate. A ZnO film was obtained before the nanorods growth. A growth model is proposed for interpreting the growth mechanism of comb-like zigzag-notch nanostructure. Room temperature photoluminescence measurements under excitation wavelength of 325 nm showed that the ZnO comb-like nanostructure has a weak UV emission at around 384 nm and a strong green emission around 491 nm, which correspond to a near band-edge transition and the singly ionized oxygen vacancy, respectively. In contrast, a strong and sharp UV peak and a weak green peak was obtained from the ZnO nanorod arrays.     

Influence of different substrates on ZnO nanorod arrays properties

Zinc Oxide (ZnO) nanorod arrays were grown on different substrates by hydrothermal method. The crystallinity of ZnO nanorod was regularly investigated by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to examine morphology of the ZnO nanorods. The results indicate that the nanorods grow along [002] orientation. SEM and TEM images and XRD patterns show that the growth of ZnO nanorods on graphene/Quartz substrate is better than the other substrates due to the number and size of the nanorods which are highly affected through the properties of ZnO seed layers and it has lower defects than the other substrates. PL spectra ZnO would have a higher concentration of oxygen vacancy.