ZnO纳米棒薄膜的湿化学法制备及光致发光特性

在80 ℃水浴下, 采用简易的湿化学法在不导电玻璃基底上制备了ZnO纳米棒阵列, 利用X射线衍射仪(XRD)和场发射扫描电镜(FE-SEM)对样品的结构形貌进行了表征. 结果表明, 晶化30 min所得产物为六方纤锌矿相的ZnO纳米棒, 直径大约为80~90 nm. 为了分析不同的低温退火温度和退火气氛对其光致发光性能的影响, 研究了ZnO纳米棒薄膜在不同的后处理条件下的光致发光谱(PL). 实验结果表明, 在O₂气氛下于450 ℃退火1 h后, ZnO纳米棒薄膜的红光发射(约650 nm)强度相对在空气和5%H₂/95%N₂气氛下退火的样品变得更强, 而且该样品的激发波长范围(200~370 nm)与近紫外发光二极管(LEDs)的发射波长范围(350~420 nm)匹配得很好.     

Mg5SnB2O10:Eu3+,Bi3+—一种用于发光二极管的红色荧光粉的制备及其发光性能的研究

采用高温固相法成功合成了单一相的Eu³⁺,Bi³⁺共掺的Mg₅SnB₂O₁₀红色荧光粉,并通过X射线衍射、漫反射光谱、光致发光光谱等手段对该体系的结构及其发光特性进行了测试和研究.激发光谱表明,该荧光粉在393 nm呈现Eu³⁺的⁷Fo—⁵L₆特征激发,可以与用于发光二极管的近紫外芯片很好地匹配.在393 nm激发下,其发射光谱在591,612,701 nm处呈现Eu³⁺的⁵Do—⁷F₁,⁵Do—⁷F₂,⁵D₀—⁷F₄的特征发射.并且当固定Eu³⁺的浓度时,随着Bi³⁺含量的增加,发现Bi³⁺,Eu³⁺在这一体系中存在能量传递现象,系列样品发光强度大幅度提高.通过研究系列样品在不同Bi³⁺,Eu³⁺掺杂浓度下的发光性能,得出最佳样品为Mg_4.89Eu_0.1Bi_0.01SnB₂O₁₀,其积分强度达到了商用Y₂O₂S:Eu³⁺的1.1倍.     

Electronic structure and photoluminescence property of a novel white emission phosphor Na_3MgZr(PO_4)_3:Dy~(3+) for warm white light emitting diodes

To explore suitable single-phase white emission phosphors for warm white light emitting diodes, a series of novel phosphors Na_3MgZr(PO_4)_3:xDy~(3+)(0 ≤ x ≤ 0.03) is prepared, and their phase purities as well as photoluminescence properties are discussed in depth via x-ray diffraction structure refinement and photoluminescence spectrum measurement.The electronic structure properties of the Na_3MgZr(PO_4)_3host are calculated. The results reveal that Na_3MgZr(PO_4)_3 possesses a direct band gap with a band gap value of 4.917 e V. The obtained Na_3MgZr(PO_4)_3:Dy~(3+) phosphors are all well crystallized in trigonal structure with space group Rc, which has strong absorption around 365 nm and can generate warm white light emissions peaking at 487, 576, and 673 nm upon ultraviolet excitation, which are attributed to the transitions from ~4F_(9/2) to ~6H_(15/2),~6H_(13/2), and ~6H_(11/2) of Dy~(3+) ions, respectively. The optimal doping content, critical distance, decay time, and Commission International de L'Eclairage(CIE) chromaticity coordinates are investigated in Dy~(3+) ion-doped Na_3MgZr(PO_4)_3. The thermal quenching analysis shows that Na_3MgZr(PO_4)_3:Dy~(3+) has a good thermal stability, and the thermal activation energy is calculated. The performances of Na_3MgZr(PO_4)_3:Dy~(3+) make it a potential single-phase white emission phosphor for warm white light emitting diode.