P3HT/CdS/TiO2/ZnO一维有序核壳式纳米棒阵列的构制及其在杂化太阳电池中的应用研究

采用恒电位法在铟锡氧化物导电玻璃(ITO)上制备了高度有序一维ZnO纳米棒阵列,将ZnO纳米棒阵列在TiO2溶胶中采用提拉法制备出了一维TiO2/ZnO核壳式纳米棒阵列.在一维TiO2/ZnO核壳式纳米棒阵列上电沉积CdS纳米晶得到一维CdS/TiO2/ZnO核壳式纳米棒阵列,然后在一维CdS/TiO2/ZnO核壳式纳米棒阵列上电沉积聚3-己基噻吩(P3HT)薄膜得到P3HT/CdS/TiO2/ZnO核壳式纳米结构薄膜.以该纳米结构薄膜电极为光阳极制备出新型纳米结构杂化太阳电池,研究了该类电池的光电转换性能,初步探讨了该类电池的工作机理.     

纳米结构ZnO在TiO_2薄膜上的电化学沉积及其表征

在三电极体系中,以硝酸锌水溶液作为电解液,采用阴极还原电沉积法成功实现了一维纳米结构ZnO阵列在TiO2纳米粒子/ITO导电玻璃薄膜基底上的沉积,并通过XRD、SEM、EDS和PL光谱等方法对样品进行了表征.重点研究了薄膜基底、电解液浓度、沉积时间、六次亚甲基四胺(HMT)的引入对ZnO沉积及其发光性质的影响.结果显示:与ITO玻璃基底相比,ZnO更易于在TiO2纳米粒子薄膜上实现电化学沉积.ZnO属于六方晶系的铅锌矿结构,并且沿着c-轴方向表现出明显的择优化生长,以形成垂直于基底的ZnO纳米棒阵列.延长沉积时间、增加电解液浓度和引入一定量的HMT等均对ZnO的生长有促进作用,进而使其纳米棒的结晶度和取向程度提高,进而解释了所得的薄膜分别约在375和520nm处表现出ZnO的强而窄的带边紫外光发射峰和弱而宽的表面态绿光发射带.     

液相沉积法制备ZnO/CdS复合纳米棒阵列薄膜及其光电性质

采用两步化学溶液沉积法在氧化铟锡(ITO)导电玻璃衬底上制备了ZnO/CdS复合纳米棒阵列薄膜.利用X射线衍射(XRD)仪、扫描电子显微镜(SEM)、紫外-可见(UV-Vis)吸收分光光度计、荧光(PL)光谱仪及表面光电压谱(SPS)研究了不同CdS沉积时间对复合薄膜的晶体结构、形貌、光电性质的影响.研究结果表明:ZnO纳米棒阵列表面包覆CdS纳米颗粒后,其吸收光谱可拓展到可见光区;与吸收光谱相对应在可见光区出现新的光电压谱响应区,这一现象证实,通过与CdS复合可显著提高ZnO纳米棒阵列在可见光区的光电转换性能;随着CdS纳米颗粒沉积时间的延长,复合纳米棒阵列薄膜在大于383nm波长区域的光电压强度逐渐减弱,而在小于383nm波长区域的光电压强度逐渐增强.用两种不同的电荷产生和分离机制对这一截然相反的光响应过程进行了详细的讨论和解释.     

ZnO纳米线/棒阵列的水热法制备及应用研究进展

氧化锌(ZnO)纳米线/棒阵列的质量决定了所构建光电器件的性能. 为了制备出比表面积更大、垂直性更好以及无根部融合的高质量ZnO纳米线/棒阵列, 本文概述了近几年两步水热法可控制备ZnO纳米线/棒阵列的研究进展, 分别探讨了种子层、生长液和生长方法对纳米线/棒阵列形貌的影响, 详细分析了氨水、六次甲基四胺和聚乙烯亚胺对于促进纳米线/棒阵列生长的作用机理, 提出了通过微流控技术可控制备ZnO纳米线阵列提高纳米线生长效率的方法. 最后介绍了ZnO纳米线/棒阵列的形貌对于提高染料敏化太阳能电池、纳米发电机、气体传感器和场发射器件性能的重要作用, 并对未来两步水热法制备ZnO纳米线/棒阵列的发展趋势进行了展望.     

电沉积种子层化学控制生长氧化锌纳米棒和纳米管

采用水溶液法在电沉积的ZnO种子层上制备了高度取向的ZnO纳米棒阵列,并通过碱溶液化学腐蚀法获得了ZnO纳米管。对ZnO纳米棒和纳米管的溶液生长和腐蚀过程进行了分析。结果表明,种子层的结构和性能对ZnO纳米棒有着重要的影响,在-700 mV电位下沉积的种子层薄膜均匀性好,生长的纳米棒密度大、与基底垂直性好;碱溶液对纳米棒的腐蚀具有选择性,通过控制腐蚀液的浓度和时间,可获得中空的ZnO纳米管。     

籽晶层制备方式对氧化锌纳米棒阵列的影响

采用3种不同的方式制备ZnO薄膜籽晶层:旋涂、喷雾热解和脉冲激光沉积。对于每一种制备方式,其薄膜的晶体结构、形貌、表面粗糙度等性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)进行了表征。之后,通过水热合成方法,在3种籽晶层衬底上制备得到具有不同结构和形貌特征的ZnO纳米棒阵列。结果表明,ZnO纳米棒生长和籽晶层制备方式具有极强的相关性。最后,对两者相关性的生长机理进行了解释。     

ZnO纳米棒阵列在TiO2介孔薄膜上的生长及其表征

通过低温水热法成功地将ZnO纳米棒阵列定向生长在了介孔锐钛矿TiO2纳米晶薄膜上,并主要利用X射线衍射、场发射扫描电子显微镜和光致发光光谱等对其进行了表征。所制备的纳米棒具有六边形的端面,纳米棒的尺寸及端面边长分布范围窄,并且沿c轴方向(002)表现出了明显的择优化生长。此外,相比于玻璃基底或TiO2纳米颗粒薄膜,生长在介孔TiO2薄膜上的ZnO纳米棒阵列表现出了较好的取向生长,表明基底的表面结构和组成对ZnO纳米棒阵列的生长有显著的影响。根据基底有序的多孔结构,讨论了纳米棒阵列可能的生长机理。所得到的ZnO纳米棒阵列在室温下分别表现出了以370 nm为中心的强近紫外光和以530 nm为中心的弱绿光两条荧光谱带。     

具有核壳结构的ZnO纳米棒@Ni-Co双氢氧化物复合物纳米片阵列的制备及其电化学性能

通过两步水热合成法制备了具有核壳结构的ZnO纳米棒@Ni-Co双氢氧化物复合材料纳米片阵列.首先,以碳布为基底,水热法生成的ZnO沉积在碳布上形成ZnO纳米棒花簇.其次,以ZnO纳米棒为模板,水热法生成的Ni-Co双氢氧化物纳米片沉积在ZnO纳米棒表面,形成ZnO纳米棒@Ni-Co双氢氧化物纳米片复合材料阵列.形貌、结构分析和电化学性能测试表明,以碳布为基底,成功地合成了以ZnO纳米棒为模板并具有核壳结构的ZnO纳米棒@Ni-Co双氢氧化物复合材料纳米片阵列,该复合材料纳米片阵列具有较大的纵横比,且分散均匀.合成的ZnO纳米棒@Ni-Co双氢氧化物复合材料纳米片阵列具有良好的电化学性能,当电流密度为1 A/g时,其比电容值可达531.6 F/g,该复合材料在超级电容器电极材料领域具有良好的应用前景.     

水热法生长方式对ZnO纳米棒阵列结构和性能的影响

本文系统地比较了三种方式制备的ZnO纳米棒阵列的结构和性能的异同.根据水热法生长液中碱来源的不同,ZnO纳米棒阵列的生长方式分为三种:N方式(氨水)、H方式(六次甲基四胺)和NH方式(两次N方式和一次H方式).通过扫描电子显微镜,对这三种方式生长的ZnO纳米棒阵列形貌进行了表征.此外,利用X射线衍射仪、透射电子显微镜和激光拉曼光谱对ZnO的结晶性能进行比较.结果表明,ZnO纳米棒阵列的取向性N≈NH>H,ZnO的晶体质量H>NH>N.NH方式综合N方式和H方式的优势,得到了取向性和晶体质量优良的ZnO纳米棒阵列.这将为在进一步应用中有效地选择ZnO纳米棒阵列的制备方式提供重要信息.     

基底对电沉积制备ZnO纳米棒阵列的影响

采用恒电位电沉积方法, 在未经修饰的ITO导电玻璃基底上通过控制实验条件制备出不同形貌的纳米ZnO结构, 而在经过ZnO纳米粒子膜修饰后的ITO导电玻璃基底上, 制备出透明、高取向、粒径小于30 nm的ZnO纳米棒阵列. 用扫描电子显微镜(SEM)、X射线衍射(XRD)以及透射光谱对制备出的ZnO纳米棒阵列的结构、形貌和透明性进行了表征. 测试结果表明, ZnO纳米棒阵列的平均直径为21 nm, 粒径分布窄, 约18～25 nm, 择优生长取向为[001]方向, 垂直于基底生长. 当入射光波长大于400 nm时, ZnO纳米棒阵列的透光率大于95%.     

Influence of different substrates on ZnO nanorod arrays properties

Zinc Oxide (ZnO) nanorod arrays were grown on different substrates by hydrothermal method. The crystallinity of ZnO nanorod was regularly investigated by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to examine morphology of the ZnO nanorods. The results indicate that the nanorods grow along [002] orientation. SEM and TEM images and XRD patterns show that the growth of ZnO nanorods on graphene/Quartz substrate is better than the other substrates due to the number and size of the nanorods which are highly affected through the properties of ZnO seed layers and it has lower defects than the other substrates. PL spectra ZnO would have a higher concentration of oxygen vacancy.     

一种在固体基底上制备高度取向氧化锌纳米棒的新方法

采用廉价、低温的方法，在修饰过ZnO纳米粒子膜的ITO基底上成功制备出具有 高长径比、高度取向的ZnO纳米棒阵列，用扫描电子显微镜(SEM)，X射线衍射(XRD) ，高分辨透射电子显微镜(HRTEM)以及拉曼光谱对制备出的ZnO纳米棒的结构和形貌 进行了表征，测试结果表明，ZnO纳米棒是单晶，属于六方晶系，与基底直，上仍 沿(001)晶面择优生长的特征，并且ZnO纳米棒基本上无氧空位的存在，统计结果显 示，水热反应2h后90%以上的ZnO纳米棒直径为120～190nm，长度为4μm     

P3HT修饰一维有序壳核式CdS/ZnO纳米棒阵列复合膜的光电化学性能

采用电化学方法在铟锡氧化物(ITO)导电玻璃上制备了高度有序的ZnO纳米棒阵列, 在ZnO纳米棒阵列上先后电化学沉积CdS纳米晶膜及聚3-己基噻吩(P3HT)薄膜得到P3HT修饰的一维有序壳核式CdS/ZnO纳米阵列结构, 并通过扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、能量散射X射线(EDX)等表征手段证实了该结构的形成. 以此纳米结构薄膜为光阳极组装新型半导体敏化太阳电池, 研究了CdS纳米晶膜的厚度和P3HT薄膜的沉积对电池光伏性能的影响, 初步探讨了电荷在电池结构中的传输机理, 结果表明, CdS纳米晶膜和P3HT薄膜的沉积有效地拓宽了光阳极的光吸收范围, 实验中电池的光电转换效率最高达到1.08%.     

Surfactant-assisted route to synthesize well-aligned ZnO nanorod arrays on sol-gel-derived ZnO thin films

Anisotropic growth of ZnO nanorod arrays on ZnO thin films was achieved at a temperature of 90 degrees C by a surfactant-assisted soft chemical approach with control over size and orientation. ZnO thin films with c-axis preferred orientation had been achieved by the sol-gel technique. Lengths, diameters, and the degree of alignment of the ZnO nanorods were controlled by changing the experimental parameters. It was observed that the surfactant was essential to restrict the lateral growth of the nanorods, whereas the pH level of the reaction medium controlled the length of the nanorods. On the other hand, the orientation of the nanorods depended on the crystalline orientation of the film as well as the pH of the reaction medium. Room-temperature photoluminescence studies revealed that the ZnO nanorods with the best alignment exhibited the best emission property. The ZnO nanorods exhibited a strong UV emission peak at approximately 3.22 eV, ascribed to the band-edge emission. The field emission studies of the well-aligned nanorod arrays exhibited a low turn-on field of 1.7 V/microm to get an emission current density of 0.1 microA/cm(2).     

柔性光电器件发光层用ZnO微纳阵列/聚合物复合材料

采用简单的低温(温度未超过100 °C)溶液法在具有较好柔韧度的基于聚对苯二甲酸乙二醇酯(PET)衬底的铟锡氧化物(ITO)导电膜(PET/ITO)上成功制备了聚丙烯酰胺(PAM)修饰的ZnO微纳阵列. 用X射线衍射(XRD)仪和扫描电子显微镜(SEM)对ZnO微纳阵列的晶体结构和表面形貌进行了表征, 结果表明ZnO阵列的平均直径为150 nm, 长度为3 μm, 端面具有六边形结构, 沿[0001]方向择优生长, 较好地垂直在PET/ITO上; 探讨了ZnO微纳阵列在PAM存在下的形成机理以及所制备的ZnO阵列在柔性光电器件方面的应用; ZnO微纳阵列的光致发光(PL)性能表明, 在没有PAM的存在下, 具有蓝光(457 nm)和绿光(530 nm)缺陷发射峰, 这可能是电子分别从扩展态锌间隙(Zn_i)到价带和从导带到锌位氧(O_Zn)的跃迁引起的, 而在PAM存在下所制备的PAM/ZnO阵列仅仅在400 nm处有一个发射峰, 这是由于电子从Zn_i到价带的跃迁引起的. 基于PAM/ZnO的柔性器件具有较好的二极管特性, 表明其在柔性光电器件方面的应用极具潜力.     

ZnO纳米棒阵列的同步法制备及其PL性能研究

在较低温度下，采用化学法在Zn片和玻璃片上同步制备了ZnO纳米棒阵列。利用XRD、FESEM和HRTEM对样品进行了表征，并且通过光致发光谱研究了阵列的光致发光(PL)性能。结果表明，ZnO纳米棒阵列较为致密、取向性较好。纳米棒为六方纤锌矿相，沿c轴生长，平均直径约为60 nm。同步法制备的2种ZnO纳米棒阵列均具有较好的紫外和橙红色发光性能，但发光特性却存在一定差异，这可能主要是由于2种阵列中纳米棒的缺陷含量不同所致。     

Biofunctional ZnO nanorod arrays grown on flexible substrates

A square pattern of thioctic acid self-assembled ZnO nanorod arrays was grown on a large 4-in. thermoplastic polyurethane (TPU) flexible substrate via an in situ soluthermal process at low temperature (348 K). With the addition of dimercaptosuccinic acid (DMSA), the surface chemistry forms a disordered ZnO phase, and the morphology of the ZnO-DMSA nanorods changes with various DMSA addition times. As evidenced by the Zn2p3/2, C1s, O1s, S2p, and N-1s scans of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), DMSA and proteins were conjugated on the single crystalline ZnO nanorods. The photoluminescence (PL) spectra indicated that the optical properties of ZnO nanorod arrays were changed while the DMSA was inserted, and proteins were conjugated. Furthermore, a control test found that the ZnO nanorods show a significant improvement in sensitive characterization over the ZnO film. As another proteins (e.g., human serum albumin, HSA) were bound onto the ZnO-bovine serum albumin (BSA) nanorod arrays, an enhanced ultraviolet emission intensity was detected. On the basis of these results, one might be expected to conjugate specific biomolecules on the biofunctional ZnO nanorod arrays to detect the complementary biomolecules by PL detecting.     

General, room-temperature method for the synthesis of isolated as well as arrays of single-crystalline ABO4-type nanorods

Single-crystalline BaWO(4) and BaCrO(4) nanorods of reproducible shape and of varying sizes have been controllably prepared using a simple, room-temperature approach, based on the use of porous alumina template membranes. Aligned BaWO(4) and BaCrO(4) nanorod arrays can be obtained by dissolving the template. Our facile technique, which is analogous to biomineralization, offers a promising and generalized methodology to prepare other types of free-standing ABO(4) nanorods and their corresponding nanorod arrays. Extensive characterization of these samples has been performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDS), selected area electron diffraction (SAED), Raman spectroscopy, FT-infrared spectroscopy (FT-IR), and X-ray diffraction (XRD).     

Fabrication and photoluminescent properties of heteroepitaxial ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures

ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures were prepared by employing catalyst-free metal-organic vapor-phase epitaxy, and their structural and photoluminescent (PL) properties were investigated using transmission electron microscopy (TEM) and temperature-dependent PL spectroscopy. TEM images show that ZnO/Zn0.8Mg0.2O layers were epitaxially grown on the entire surfaces of the ZnO nanorods and the ZnO nanorod diameters as a core material were as small as 9 +/- 2 nm. A dominant PL peak was observed at 3.316 eV, from room-temperature PL spectra of ZnO/Zn0.8Mg0.2O coaxial nanorod heterostructures with ZnO core diameters of 9 nm, indicating a PL blue shift of 30 meV, which resulted from a quantum confinement effect along the radial direction in ZnO nanorods. Furthermore, temperature-dependent PL properties of the coaxial nanorod heterostructures were investigated, showing much higher PL intensity for the coaxial nanorod heterostructures than that of bare ZnO nanorods at room temperature. The origin of the enhanced PL intensity and reduced thermal quenching for the coaxial nanorod heterostructures is also discussed.