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Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission (around 740 nm) caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy (TEM), x-ray diffraction (XRD) and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850℃ towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds. 相似文献
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GaN nanowires doped with 2at.% and 6at.% Cu ions are synthesized by chemical vapour deposition method. Structural and compositional analyses demonstrate that the as-grown nanowires are of single crystal wurtzite GaN structure. Magnetic characterizations reveal that the doped GaN nanowires exhibit room temperature ferromagnetism. The measured saturation magnetic moments are 0.37ug and 0.47ug per Cu atom at 300 K for Cu 2 at. % and 6 at. %, respectively. The photoluminescence spectra show that Cu dopant can tune the band gap of the GaN, which leads to a red shift of band-edge emission with increasing dopant concentration. 相似文献
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