An AES investigation of aluminum,Al oxide and Al nitride thin films

The aluminum-L₂₃VV Auger spectra for elemental Al, Al oxide and Al nitride have been measured in an assessment of the utility of Auger spectroscopy in characterizing thin oxidized Al films used in model supported-metal catalyst studies. Clearly distinct spectra were found for the three surface chemical states. The oxide spectrum was shown to be similar to published spectra from bulk, single-crystalline Al₂O₃. Complete oxidation of Al films required exposure to O₂ at temperatures above room temperature. Room temperature exposure to hydrazine resulted in the complete nitriding of Al films. The spectrum for the nitride is similar in shape to published spectra from films produced by two alternative methods of nitriding. The hydrazine-exposure method of producing Al nitride films was found to offer an alternative, easily prepared support material for future model catalyst studies.     

Sb掺和对TeOx薄膜光学和静态记录特性的影响

以真空蒸镀法在K9玻璃基底上制备了TeO_x:Sb单层薄膜,对薄膜的结构、光学和静态记录特性进行了研究.结果表明,Sb掺和后TeO_x薄膜的结构、反射光谱和光学常量均发生了明显变化.TeO_x:Sb薄膜具有良好的写入灵敏性并具有了一定的可擦除性能,该类薄膜有望作为可擦除光存储介质.     

热处理对CuIn(S,Se)2薄膜断面成分均匀性的影响

用同时硒硫化共溅射Cu-In预制层的方法制备了CuIn(S,Se)₂薄膜．为了了解热处理对CuIn(S,Se)₂薄膜断面成分均匀性的影响,对经"一段式"热处理(500 ℃)和"二段式"热处理(250 ℃保温然后500 ℃)的样品进行了研究．XRD测试结果表明,经过"一段式"热处理后的样品XRD(112)峰出现劈裂现象,而经过"二段式"热处理的样品XRD(112)峰比较匀称．GIXRD和EDS测试证明样品经过"二段式"热处理后断面成分均匀性较好．通过XRD 和Raman测试对两种热处理下的反应机理进行了研究,阐述了两种热处理对CuIn(S,Se)₂薄膜断面成分均匀性的影响的内在原因．     

Dynamics of oxide phases on the surface of single- and polycrystalline Pb1 − x Sn x Te films upon their investigation by the raman light scattering method

We have studied Raman spectra of single- and polycrystalline Pb_{1 ? x} Sn _x Te (0 ≤ x ≤ 1) films on different substrates in relation to the intensity of the laser action. The composition of oxide phases on the surface of lead-tin telluride films has been described, and their modification as a result of photostimulated oxidation of the surface during measurements of spectra has been analyzed. We have shown that, for films with a small mole fraction of tin telluride (x ≤ 0.26), irrespective of the crystalline state, predominant oxidation of tellurium with the formation of the compound TeO₂ takes place during the laser action. In films with a high content of tin, at a laser-action intensity higher than 1000 μW, tellurium dioxide TeO₂ on the surface is replaced with tin dioxide SnO₂.     

Structural,optical and electrical properties of tin oxide thin films by electrostatic spray deposition

Tin oxide (SnO₂) thin films were deposited by electrostatic spray deposition (ESD). The structural, optical and electrical properties of the films for different solvents were studied. The morphology of the deposited thin films was investigated by scanning electron microscopy. The optical transmission spectra of the films showed 66–75% transmittance in the visible region of spectrum. The electrical resistivity of thin films deposited using the different solvents ranged 1.08 × 10^?3–1.34 × 10^?3 Ω-cm. Overall, EG and PG were good solvents for depositing SnO₂ thin films by the ESD technique with stable cone jet.     

Stoichiometry changes in tellurium oxide films

The changes occuring in the stoichiometry of evaporated tellurium oxide films from room temperature to 375°C were investigated using infrared (IR) absorption spectroscopy, X-ray diffraction and scanning electron microscopy (SEM). Films deposited on room temperature substrate were found to decompose and amorphous having Te₂O₅ stoichiometry. Annealing at 250°C in air for 30 minutes gave polycrystalline nature with TeO₃ stoichiometry. The IR and X-ray diffraction results further indicated that the original TeO₂ stoichiometry could be restored at 375°C annealing temperature with a preferred growth along 110 plane. These films were found to be chemically stable as further annealing in air at 375°C gave no change on their infrared spectrum and X-ray diffraction pattern.     

XPS characterization of sensitized n-TiO2 thin films for dye-sensitized solar cell applications

TiO₂ thin films, employed in dye-sensitized solar cells, were prepared by the sol-gel method or directly by Degussa P25 oxide and their surfaces were characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The effect of adsorption of the cis-[Ru(dcbH₂)₂(NCS)₂] dye, N3, on the surface of films was investigated. From XPS spectra taken before and after argon-ion sputtering procedure, the surface composition of inner and outer layers of sensitized films was obtained and a preferential etching of Ru peak in relation to the Ti and N ones was identified. The photoelectrochemical parameters were also evaluated and rationalized in terms of the morphological characteristics of the films.     

Electrochromic and photoluminescence properties of cobalt oxide thin films prepared by spray pyrolysis

Cobalt oxide thin films were prepared by a facile spray pyrolysis technique, using a perfume atomizer with an aqueous solution of hydrated cobalt chloride salt with a molar concentration of 0.025?M as a source of cobalt. The films were deposited onto glass substrates at temperature of 350?°C. The structural, morphological, and electrochromic properties of the obtained films were studied. It was found from X-ray diffraction analysis that the films were polycrystalline in nature with spinel-type cubic structure and preferred orientation along [111] direction. The Scanning Electron Microscopy images revealed a porous structure with the average grain size around 200?nm. The cyclic voltammetry measurements revealed that Cobalt oxide thin film is an anodically coloring electrochromic material with a transmittance variation in the visible range of 31%, and a fast response time (about 2?seconds) and a good cycling stability. These electrochromic performances make cobalt oxide thin film an attractive material for using as an anodic electrochromic material in smart windows devices. The photoluminescence spectra exhibited a strong emission in the visible region confirming the good crystallinity properties of Co₃O₄ thin films.     

The real-time gamma radiation dosimetry with TeO2 thin films

A detailed study of the effect of gamma radiation on the current–voltage characteristics of the TeO₂ thin films of different thicknesses, prepared by thermal evaporation in a vacuum, has been carried out for a much wider range of the gamma radiation doses than made here-to-fore. Subsequently, for the thin films of different thicknesses at different applied voltages, the variations of the current density with dose have been obtained. The current density increases near linearly with the gamma radiation dose up to a critical radiation dose, a dose value higher for the thicker films and decreases thereafter. The sensitivities of these TeO₂ thin films at different applied voltages have been found to be in the range 1.2–37.0 nA/cm²/μGy. Correspondingly, the detection limits have also been estimated and have been found to be in the range 0.22–2.16 mGy. Clearly, the TeO₂ thin films have high potential for their use as real-time gamma radiation dosimeters in monitoring the gamma radiation doses under a variety of practical situations involving low level to high level of the doses.     

Dispersive Fourier transform measurement of an opaque solid at 6K

Infrared absorption spectra of thin films on metal surfaces are commonly obtained by measuring specular multireflection losses for obliquely incident radiation. Using photoacoustic techniques and a tunable CO₂ laser, we demonstrate that the absorbed radiation may instead be directly recorded to high accuracy from a single reflection. Spectra are shown for several oxide films on aluminium, with sensitivity presently limited to approximately $\text{1}\text{20th}$ of the natural oxide layer. Details and advantages of the PARAS technique are discussed, pointing out improvements expected to increase the sensitivity by a factor of 100 or more.     

Niobium based coatings for dental implants

Niobium based thin films were deposited on stainless steel (SS) substrates to evaluate them as possible biocompatible surfaces that might improve the biocompatibility and extend the life time of stainless steel dental implants. Niobium nitride and niobium oxide thin films were deposited by reactive unbalanced magnetron sputtering under standard deposition conditions without substrate bias or heating. The biocompatibility of the surfaces was evaluated by testing the cellular adhesion and viability/proliferation of human cementoblasts during different culture times, up to 7 days. The response of the films was compared to the bare substrate and pieces of Ti6Al4V; the most commonly used implant material for orthopedics and osteo-synthesis applications. The physicochemical properties of the films were evaluated by different means; X-ray diffraction, Rutherford backscattering spectroscopy and contact angle measurements. The results suggested that the niobium oxide films were amorphous and of stoichiometric Nb₂O₅ (a-Nb₂O₅), while the niobium nitride films were crystalline in the FCC phase (c-NbN) and were also stoichiometric with an Nb to N ratio of one. The biological evaluation showed that the biocompatibility of the SS could be improved by any of the two films, but neither was better than the Ti6Al4V alloy. On the other hand, comparing the two films, the c-NbN seemed to be a better surface than the oxide in terms of the adhesion and proliferation of human cemetoblasts.     

Synthesis and structural investigations on TeO2-PbF2-CdF2 glasses and transparent glass-ceramics

New glasses have been prepared in the oxifluoride mixed system TeO₂-PbF₂-CdF₂. Starting from pure TeO₂ the addition of the fluorides leads to a decrease in the glasses characteristic temperatures. Also from Raman scattering results a structural evolution was observed where the number of structural units described as [TeO₃] trigonal pyramids and [TeO₃₊₁] polyhedra increases at the expense of the [TeO₄] trigonal bipyramids supposed to exist in the TeO₂ rich samples. Transparent glass ceramics were obtained from the glass with composition 80TeO₂-10PbF₂-10CdF₂ (mol%) with the PbTe₃O₇ crystalline phase being identified by X-ray diffraction and EXAFS measurements performed at the Te K, Cd K and Pb L_III edges. Also from Exafs measurements it is proposed that cadmium ions are preferentially surrounded by oxygen atoms although they were in a fluoride anion environment in the starting material.     

Synthesis and characterisations of Au-nanoparticle-doped TiO2 and CdO thin films

In the present study, pure and gold nanoparticle (Au NP)-doped titanium dioxide (TiO₂) and cadmium oxide (CdO) thin film were prepared by the sol–gel method, and the effect of Au NP doping on the optical, structural and morphological properties of these thin films was investigated. The prepared thin films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet–visible–near infrared (UV–Vis–NIR) spectra. While the optical band increases from 3.62 to 3.73 for TiO₂ thin films, it decreases from 2.20 to 1.55 for CdO thin films with increasing Au doping concentration. Analysis of XRD indicates that the intensities of peaks of the crystalline phase have increased with the increasing Au NP concentrations in all thin films. SEM images demonstrate that the surface morphologies of the samples were affected by the incorporation of Au NPs. Consequently, the most significant results of the present study are that the Au NPs can be used to modify the optical, structural and morphological properties of TiO₂ and CdO thin films.     

Te/TeO2-SiO2复合薄膜的吸收和非线性光学特性研究

应用分光光度计测量Te/TeO₂-SiO₂复合薄膜的透射光谱和吸收光谱, 在480nm附近观察到Te颗粒引起的等离子体共振吸收峰; 采用Z扫描技术研究了共振(激发波长为532 nm)和非共振情况下(激发波长1064 nm) 不同电位制备薄膜的Te颗粒状态与复合薄膜的三阶非线性极化率的关系. 基于有效介质理论对复合薄膜的三阶非线性效应进行分析, 研究Te颗粒大小对Te/TeO₂-SiO₂复合薄膜的非线性光学性质的影响及其产生机理. 结果表明薄膜制备过电位增大, Te的粒径减小, 颗粒数量多, 颗粒分布趋于均匀, 使得金属颗粒的表面等离子体共振峰红移, 吸收强度增强, 导致三阶非线性光学效应增强, χ⁽³⁾由1064 nm的5.12×10^-7 esu增大为532 nm的8.11×10^-7 esu. 关键词： 碲 二氧化碲 复合薄膜 三阶非线性     

Studies of clean and oxidized tellurium surfaces

Clean and oxidized surfaces of tellurium films have been studied using electron-excited Auger electron spectroscopy, X-ray photoelectron spectroscopy, energy loss spectroscopy, and electron-stimulated desorption. The results for clean tellurium are in general agreement with previous studies, but the oxidation studies have provided new information. Reaction between oxygen gas and tellurium was found to be an activated process requiring tellurium temperatures in excess of 60°C to produce detectable oxide for 30 min exposures to ~800 Torr of oxygen. Increasing the temperature to 200°C produced a 10.6 A layer of TeO₂. This layer was rapidly removed by electron irradiation with a cross-section of ~3 × 10^?18 cm² for electron-stimulated desorption of oxygen by 2 keV electrons; however, there was evidence for reduced cross sections for thinner TeO₂ layers.     

Valence control of cobalt oxide thin films by annealing atmosphere

The cobalt oxide (CoO and Co₃O₄) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH₃OCH₂CH₂OH and Co(NO₃)₂·6H₂O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co₃O₄ thin film was obtained by annealing in air at 300-600, and N₂ at 300, and transferred to CoO thin film by raising annealing temperature in N₂. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.     

Dry etching of CuCrO2 thin films

Highly conducting films of p-type CuCrO₂ are attractive as hole-injectors in oxide-based light emitters. In this paper, we report on the development of dry etch patterning of CuCrO₂ thin films. The only plasma chemistry that provided some chemical enhancement was Cl₂/Ar under inductively coupled plasma conditions. Etch rates of ∼500 Å min⁻¹ were obtained at chuck voltages around −300 V and moderate source powers. In all cases, the etched surface morphologies were improved relative to un-etched control samples due to the smoothing effect of the physical component of the etching. The threshold ion energy for the onset of etching was determined to be 34 eV. Very low concentrations (≤1 at.%) of residual chlorine were detected on the etched surfaces but could be removed by simple water rinsing.     

Wet‐Etching Induced Abnormal Phase Transition in Highly Strained VO2/TiO2 (001) Epitaxial Film

The metal–insulator transition (MIT) behavior in vanadium dioxide (VO₂) epitaxial film is known to be dramatically affected by interfacial stress due to lattice mismatching. For the VO₂/TiO₂ (001) system, there exists a considerable strain in ultra‐thin VO₂ thin film, which shows a lower T_c value close to room temperature. As the VO₂ epitaxial film grows thicker layer‐by‐layer along the “bottom‐up” route, the strain will be gradually relaxed and T_c will increase as well, until the MIT behavior becomes the same as that of bulk material with a T_c of about 68 °C. Whereas, in this study, we find that the VO₂/TiO₂ (001) film thinned by “top‐down” wet‐etching shows an abnormal variation in MIT, which accompanies the potential relaxation of film strain with thinning. It is observed that even when the strained VO₂ film is etched up to several nanometers, the MIT persists, and T_c will increase up to that of bulk material, showing the trend to a stress‐free ultra‐thin VO₂ film. The current findings demonstrate a facial chemical‐etching way to change interfacial strain and modulate the phase transition behavior of ultrathinVO₂ films, which can also be applied to other strained oxide films.     

Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target

Zinc oxide thin films have been obtained in O₂ ambient at a pressure of 1.3 Pa by pulsed laser deposition (PLD) using ZnO powder target and ceramic target. The effect of temperature on structural and optical properties of ZnO thin films was investigated systematically by XRD, SEM, FTIR and PL spectra. The results show that the best structural and optical properties can be achieved for ZnO thin film fabricated at 700 °C using powder target and at 400 °C using ceramic target, respectively. The PL spectrum reveals that the efficiency of UV emission of ZnO thin film fabricated by using powder target is low, and the defect emission of ZnO thin film derived from Zn_i and O_i is high.     

Raman scattering in the Bi2TeO5 single crystal

Polarized Raman spectra of the Bi₂TeO₅ single crystal have been investigated for the first time. The group-theoretic analysis of the first-order vibrational spectra is performed. The number of the experimentally observed bands is less than the predicted number of normal modes. The spectral ranges with similar bands are revealed. Some ranges in the spectra of Bi₂TeO₅ are identified from the spectral data for the materials containing bismuth-oxygen and tellurium-oxygen complexes.