Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO

The surface patterning of the indium tin oxide (ITO) transparent current layer has been investigated to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). LEDs with periodic micro-hexagon patterned ITO have been fabricated utilizing standard lithography techniques and inductively coupled plasma (ICP) technology. The luminance intensity of the LED chips with patterned ITO following 160 s ICP etching was enhanced by about 50% compared to the LED chips with unpatterned ITO. Detailed processing parameters are provided. scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to examine the micro-structures. The results indicate that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs.     

Formation of holographic diffraction gratings in photoresist

The exposure-development process for the fabrication of holographic diffraction gratings for integrated optics in the positive photoresist Shipley AZ-1350 is theoretically and experimentally investigated. An analysis of the light intensity distribution is carried out, taking into account the reflectivity at the photoresist-substrate interface and the attenuation in the photoresist for two holographic exposure arrangements. The influence of the exposure energy, the development time for a fixed concentration of the developer and the initial photoresist thickness are described. Various grating profiles are calculated for photoresist films, coated on matched and reflective substrates. Scanning electron micrographs demonstrate very good agreement between the actual and calculated gratings profiles.     

Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

Wafer-scale SiO2 photonic crystal （PhC） patterns （SiO2 air-hole PhC, SiO2-pillar PhC） on indium tin oxide （ITO） layer of GaN-based light-emitting diode （LED） are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for expo- sure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2- pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.     

Fabrication of Two-Dimensional Photonic Crystals with Triangular Rods by Single-Exposure Holographic Lithography

We demonstrate a single-exposure holographic fabrication of two-dimensional photonic crystal with round- cornered triangular ＇atoms＇ arranged in a triangular lattice. Simulation results show that double absolute photonic band gaps exist in this structure. Our experimental results show that holographic lithography can be used to fabricate photonic crystals not only with various lattice structures but also with various kinds of structures of the atoms, to obtain absolute band gaps or a particular band gap structure. Furthermore, the single-exposure holographic method not only makes the fabrication process simple and convenient but also makes the structures of the atoms more perfect.     

Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated.The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask.The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer.In addition,the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics.The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface,and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.     

Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.     

Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes

InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl (HCl:H₂O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.     

全息技术制作二维光子晶体蓝宝石衬底提高发光二极管外量子效率

为了提高GaN基发光二极管(LED)的外量子效率,在蓝宝石衬底制作了二维光子晶体.衬底上的二维光子晶体结构采用激光全息技术和感应耦合等离子体(ICP)干法刻蚀技术制作,然后采用金属氧化物化学气相沉积(MOCVD)技术在图形蓝宝石衬底(PSS)上生长2μm厚的n型GaN层,4层量子阱和200nm厚的p型GaN层,形成LED结构.衬底上制作的二维光子晶体为六角晶格结构,晶格常数为3.8μm,刻蚀深度为800nm.LED器件光强输出测试结果显示,在PSS上制作的LED(PSS-LED)的发光强度普遍高于蓝宝石平 关键词： 全息 发光二极管 图形蓝宝石衬底 外量子效率     

Improvement of photorefractive properties of proton-exchanged LiTaO3 waveguides

3 are fabricated by both a proton exchange and a successive copper exchange. The influence of different fabrication steps on the refractive index profile and optical absorption is investigated. The holographic efficiency is determined together with the dark- and photo-conductivity. We show that the photorefractive properties of proton-exchanged LiTaO₃ waveguides are considerably improved by the additional copper exchange. It is established that the holographic efficiency depends on the copper content, the phase of the proton-exchanged layer and the light intensity. Received: 3 March 1997     

Multimode interference wavelength multi/demultiplexer for 1310 and 1550 nm operation based on BCB 4024-40 photodefinable polymer

A 1310 and 1550 nm coarse wavelength multi/demultiplexer based on benzocyclobutene (BCB 4024-40) polymer is demonstrated for the first time. The device is designed based on a combination of general interference and paired interference mechanisms of multimode interference (MMI). It is fabricated on BK7 glass substrate with a thin layer of SiO₂ as cover. A cost effective chemical etching technique is used in the fabrication process to take advantage of the photosensitive nature of the polymer. The device length was significantly reduced by adopting the restricted multimode interference scheme, lower beat length ratio and cascaded MMI couplers. The measured crosstalk at 1310 nm was 14.4 dB and at 1550 nm was 20.6 dB. The measured insertion loss is around 3.2-3.5 dB for both ports.     

全息离子束刻蚀衍射光栅

全息离子束刻蚀衍射光栅集中了机械刻划光栅的高效率和全息光栅的无鬼线、低杂散光、高信噪比的优点．全息离子束刻蚀已作为常规工艺手段应用于真空紫外及软x射线衍射光栅的制作．文章对全息离子束刻蚀衍射光栅的制作方法、主要类型、研究现状和应用进行了综述．     

Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces

p-GaN surfaces axe nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes （LEDs）. The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices, This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces,     

Fabrication of large-area 3D photonic crystals using a holographic optical element

A holographic technique for fabricating 3D photonic crystal is presented. The key element in the fabrication system is a holographic optical element (HOE) consisting of three gratings. Used in combination with a mask, the HOE can generate four beams under single illuminating beam, and 3D lattice structures can be formed by the interference of the four beams. Holographic approach is used to make HOE, so large area lattice structures can be fabricated. Numerical simulations indicate that beam intensity ratio of central beam to outer beam is one of the factors that affects the structures fabricated in photoresist, and high diffraction efficiency of the gratings in HOE is favorable when using cw laser with relatively low power as light source. Experimental results show clear 3D lattice structures fabricated using the HOE, verifying the effectiveness of the technique.     

Holographic design of hexagonal photonic crystals of irregular columns with large full band gap

The shape and size of the dielectric columns or particles (“atoms”) of photonic crystals (PhCs) formed by holographic lithography are determined by the isointensity surfaces of the interference field; consequently the PhCs’ photonic band gap (PBG) properties are closely related to their fabrication design. Here we have proposed a new structure of two-dimensional (2-D) hexagonal lattice with irregular columns, which can yield a 2-D complete relative band gap of 24.0% in case of the dielectric columns of ε = 13.6 in air, about 27% increase compared with that of the same lattice with regular triangular columns. This band gap size is among the largest for all the possible 2-D PhCs reported until now. The relationship between band gap properties of resultant structure and the specific fabrication conditions such as structure design and the choice of optimum intensity threshold and filling ratio are systematically discussed. The optical design for making this structure by two exposures is explained. This work may demonstrate the unique feature and advantages of photonic crystals made by holographic method and provide a guideline for their design and experimental fabrication.     

Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED

Inductively coupled plasma (ICP) etching of GaN is systemically investigated by changing ICP power/RF bias power, operating pressure, and Cl₂/BCl₃ gas mixing ratio. The hexagonal etch pits related to screw dislocation existing along GaN epitaxial layer were observed on the etched GaN surface after ICP etching. The intensity of band-edge emission is significantly reduced from the etched n-GaN surface, which reveals that plasma-induced damage are generated after ICP etching. The oblique sidewall is transferred into GaN using a combination of Cl₂/BCl₃ plasma chemistry and hard mask SiO₂. By adjusting ICP etching process parameters, oblique sidewalls with various oblique angles can be formed, allowing for conformal metal lines coverage across the mesa structures, which can play an important role in the interconnection of multiple microchips for light emitting diodes (LEDs) fabrication.     

Tuning a nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes (LEDs) by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.     

A new laser direct etching method of indium tin oxide electrode for application to alternative current plasma display panel

For cost effective fabrication and time of alternative current plasma display panels (AC PDPs), an indium tin oxide (ITO) layer was patterned directly with a Q-switched diode pumped Nd:YVO₄ laser (λ = 1064 nm). As experimental results, 500 mm/s scan speed with 40 kHz repetition rate was suitable for the application to AC PDP ITO electrode. In comparison with the chemically wet-etched ITO patterns by photolithography method, laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripple-like structure of the etched bottom. By dipping the laser-ablated ITO films in the chemical etching solution for 30 s at 50 °C, the shoulders were effectively removed without affecting the discharging properties of AC PDP.     

Yield improvement for displays’ color filters surface by establishing a precision reclaim-module

An effective surface micromachining process for yield improvement was developed using microelectromechanical etching as a precision reclaim-module for indium tin oxide (ITO) thin-film nanostructures from the displays’ color filter surface of thin film transistor liquid crystal displays (TFT-LCDs). The low yield of ITO thin-film deposition is an important factor in optoelectronic semiconductor production. By establishing a recycling process using the ultra-precise removal of thin-film nanostructures, the optoelectronic semiconductor industry can effectively recycle defective products, minimizing both production costs and pollution. For the etching-process, an adequate gap-width between the negative-electrode and the ITO surface, a high flow velocity or a higher working temperature of the electrolyte, results in a higher removal rate for ITO thin-films. Also, adequate feed rate of the workpiece (displays’ color filter) combined with enough electrical power produces a fast removal rate. Pulsed direct current can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of the workpiece, but it raises the current rating. A smaller edge radius and a small width of the negative-electrode provide a larger discharge space and better etching effect. Microelectromechanical etching requires only a short period of time to remove the ITO thin-film easily and cleanly.     

ITO界面调制层对GZO电极LED器件性能的影响

采用磁控溅射制备GZO和具有ITO界面调控层的GZO(ITO/GZO)透明导电薄膜作为大功率LED的电流扩散层,对比研究界面调控层对LED器件性能的影响。研究结果表明,ITO/GZO薄膜的透过率在可见光区达80%以上,退火后的ITO/GZO薄膜有较低的电阻率(1.15×10^-3 Ω·cm)。ITO调控层的介入能够调制GZO表面粗糙度,有利于改善LED外量子效率,降低GZO/p-GaN界面的接触势垒,提高LED器件的光电性 能。通过ITO界面调控后,LED器件20 mA驱动电流下的工作电压从9.5 V降低为6.8 V,发光强度从245 mcd 升到297 mcd,提高了20%;驱动电流为35 mA时,其发光强度从340.5 mcd 升到511 mcd,提高了50%。     

Characterisation of light emitting diodes (LEDs) for application in digital holographic microscopy for inspection of micro and nanostructured surfaces

Partial coherent light sources open up prospects for phase noise reduction in digital holographically reconstructed phase distributions by suppressing multiple reflections in the experimental setup. Thus, light emitting diodes (LEDs) are investigated for application in digital holographic microscopy. First, the spectral properties and the resulting coherence length of an LED are characterised. In addition, an analysis of dispersion effects and their influence on the hologram formation is carried out. The coherence length of LEDs in the range of a few micrometers restricts the maximum interference fringe number in off-axis holography for spatial phase shifting. Thus, the application of temporal phase-shifting-based digital holographic reconstruction techniques is compared to spatial phase-shifting-based methods. It is demonstrated that LEDs are applicable for digital holographic microscopy in connection with both spatial and temporal phase-shifting-based techniques for reduction of noise in comparison to a laser-light-based experimental setup.