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Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO
Authors:Pei Wang  Zhiyin Gan  Sheng Liu
Institution:1. Institute for Microsystems, School of Mechanical Engineering, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan 430074, China;2. Wuhan National Lab of Optoelectronics, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan 430074, China;1. Department of Semiconductors, Institute of Science and High Technology and Environmental Sciences, Graduate University of Advanced Technology, Kerman, Iran;2. Engineering Department, Shahid Beheshti University, G.C., P.O. Box 1983969411, Tehran, Iran;3. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia;4. Thi Qar University, Science College, Physics Department, Nassiriya Nanotechnology Research Laboratory (NNRL), Nassiriya, Iraq;1. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan;2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan;3. Venture Business Laboratory (VBL), Nagoya University, Nagoya, Aichi 464-8603, Japan;4. Akasaki Research Center, Nagoya University, Nagoya, Aichi 464-8603, Japan;1. School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China;2. State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;3. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA;4. Quantum Wafer Inc., Foshan 528251, China;1. Laboratoire Charles Coulomb, CNRS and Univ. Montpellier, case courrier 074, 34095 Montpellier CEDEX 5, France;2. Centre de Recherche sur les Ions, les Matériaux et la Photonique, Boulevard du Maréchal Juin, 14050, Caen CEDEX 4, France;3. Université Côte d’Azur, CRHEA-CNRS, Centre de Recherche sur l’Hétéro-Épitaxie et ses Applications, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France;4. IOFFE Institute, Saint Petersburg 194021, Russia;1. Interdisciplinary Program of Photonics Engineering, Chonnam National University, Gwangju 500-757, Republic of Korea;2. LG Innotek Co. Ltd., Paju 413-901, Republic of Korea;3. Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea
Abstract:The surface patterning of the indium tin oxide (ITO) transparent current layer has been investigated to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). LEDs with periodic micro-hexagon patterned ITO have been fabricated utilizing standard lithography techniques and inductively coupled plasma (ICP) technology. The luminance intensity of the LED chips with patterned ITO following 160 s ICP etching was enhanced by about 50% compared to the LED chips with unpatterned ITO. Detailed processing parameters are provided. scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to examine the micro-structures. The results indicate that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs.
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