Investigation of photoelectron action in cubic AgCl emulsion doped with formate ions

In recent years, the formate ion （HCO2^-） as a kind of hole-to-electron converter has attracted much attention of photographic researchers. The formate ions can trap photo-generated holes, eliminate or reduce the electron loss caused by electron-hole recombination in latent image formation process. Through the hole-to-electron conversion, it can also release an extra electron or electron carrier, improving photosensitivity. In this paper the microwave absorption and dielectric spectrum detection technique is used to detect the time evolution behaviour of free photoelectrons generated by 35ps laser pulses in cubic AgCl emulsions doped with formate ions. The influence of different doping conditions of formate ions on the photoelectron decay kinetics of AgC1 is analysed. It is found that when the HCO2^- content is 10^-3mol/mol Ag and the doping position is 90% the electron decay time and lifetime reach their maxima due to the efficient trap of holes by formate ions.     

Investigation of the photoelectron decay of silver halide microcrystal

The microwave absorption dielectric spectrum can be used to study the decay process of free photoelectrons and shallow-trapped electrons in semiconductor crystals. The decay curve of free photoelectrons and shallow-trapped electrons of silver halide grains is measured using this technique. The influence of iodide and K_4Fe(CN)_6 shallow electron trap dopants on the photoelectron lifetime of silver halide grains is studied. For the unsensitized cubic AgCl crystals, when the free photoelectron lifetime (FLT) reaches a maximum, the photographic efficiency is optimal. From our analysis, we conclude that FLT is the longest for the cubic AgCl crystals doped with 0.5% iodide at 80% doping position and 1×10^{-6} mol K_4Fe(CN)_6/molAg, whereas, for the highly photosensitized cubic AgBrCl crystals doped with K_4Fe(CN)_6, the photographic efficiency is optimal when the FLT reaches its minimum. The free photoelectron lifetime reaches minimum and the sensitivity of AgBrCl emulsion reaches maximum when the doping position is 30%Ag at K_4Fe(CN)_6 content of 10^{-6}mol/molAg.     

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

The fabrication process dependent effects on single event effects(SEEs) are investigated in a commercial silicon–germanium heterojunction bipolar transistor(SiGe HBT) using three-dimensional(3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.     

Influence ofγ-Fe2O3 nanoparticles doping on the image sticking in VAN-LCD

Image sticking in liquid crystal display(LCD)is related to the residual direct current(DC)voltage(RDCV)on the cell and the dynamic response of the liquid crystal materials.According to the capacitance change of the liquid crystal cell under the DC bias,the saturated RDCV(SRDCV)can be obtained.The response time can be obtained by testing the optical dynamic response of the liquid crystal cell,thereby evaluating the image sticking problem.Based on this,the image sticking of vertical aligned nematic(VAN)LCD(VAN-LCD)with different cell thicknesses(3.8μm and 11.5μm)and different concentrations ofγ-Fe2O3 nanoparticles(0.017 wt.%,0.034 wt.%,0.051 wt.%,0.068 wt.%,0.136 wt.%,0.204 wt.%,and 0.272 wt.%)was evaluated,and the effect of nano-doping was analyzed.It is found that the SRDCV and response time decrease firstly and then increase with the increase of the doping concentration ofγ-Fe2O3 nanoparticles in the VAN cell.When the doping concentration is 0.034 wt.%,theγ-Fe2O3 nanoparticles can adsorb most of the free impurity ions in liquid crystal materials,resulting in 70%reduction in the SRDCV,8.11%decrease in the decay time,and 15.49%reduction in the rise time.The results show that the doping ofγ-Fe2O3 nanoparticles can effectively improve the image sticking of VAN-LCD and provide useful guidance for improving the display quality.     

Effect of carrier mobility on performance of perovskite solar cells

The high carrier mobility and long diffusion length of perovskite material have been regarded because of its excellent photovoltaic performance. However, many studies have shown that a diffusion length longer than 1 μm and higher carrier mobility have no positive effect on the cells' performance. Studies of organic solar cells have demonstrated the existence of an optimal mobility value, while systematic research of the carrier mobility in the PSCs is very rare. To make these questions clear, the effect of carrier mobility on perovskite solar cells' performance is studied in depth in this paper by simulation.Our study shows that the optimal mobility value of the charge transportation layer and absorption layer are influenced by both doping concentration and layer thickness. The appropriate carrier mobility can reduce the carrier recombination rate and enhance the carrier concentration, thus improving the cells' performance. A high efficiency of 27.39% is obtained in the simulated cell with the combination of the optimized parameters in the paper.     

Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET

This paper presents the influences of structural parameters on the immunity of short-channel effects in grooved-gate n-channel metal－oxide－semiconductor field effect transistor (nMOSFET) using the simulator PISCES-II. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design.     

Effect of Structural Relaxation on Deformation Behaviour of Zr-Based Metallic Glass

Structural relaxation through isothermal annealing at temperature below glass transition is conducted on Zr46.75 Ti8.25 CU7.5Ni11Be27.5 （Vitreloy-4） bulk metallic glass. Defect concentration is correlated with the annealing time t according to differential scanning calorimetry thermalgrams. The effects of structural relaxation on mechanical properties and deformation behaviour are investigated by using instrumented nanoindentation. It is found that the as-cast alloy exhibits pronounced serration flow during the loading process of nanoindentation, and the size and number of the serrations decrease with the annealing time. The change of the deformation behaviour with structural relaxation is explained using a free volume model.     

Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)N quantum well operating at 1.55 μm

In this paper, we theoretically study the effects of doping concentration NDand an external electric field on the intersubband transitions in InxAl(1-x)N/InyGa(1-y)N single quantum well by solving the Schr¨odinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions(E2- E1),(E3- E1), and(E3- E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration NDexists for which the transition 0.8 eV(1.55 μm) is carried out. Finally, the dependence of the optical absorption α13(ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.     

Improvement of Properties of p-GaN by Mg Delta Doping

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.     

Theoretical and experimental study of transient response of the Yb-doped fiber amplifier

Some analysis of the transient response of the Yb-doped fiber amplifier are performed by solving a set of time-dependent rate and power transfer equations based on finite-difference method.Meanwhile,the variation of time to reach the steady state for upper level population distribution,the forward and backward amplified spontaneous emissions(ASEs)and stored energy on the system parameters including pump power,fiber length,Yb-doped concentration,and core area are numerically simulated,respectively.The results show that,by optimizing pump pulse width,stored energy can reach or even exceed the steady state value of continuous wave(CW)pump.By increasing Yb-doped concentration and core area,stored energy is increased,the ASE is suppressed and the ASE built-up time is postponed.In addition,the experimental results show the validity of the theoretical ASE built-up time.The obtained results can provide important guiding for the optimization of pump pulse width and fiber parameters.     

立方体AgCl微晶中［Fe(CN)6］4-引入的浅电子陷阱阱深与俘获截面的动力学模拟

为了描述在晶体生长阶段掺入［Fe(CN)₆］^4-的立方体AgCl微晶中 光电子的产生与 衰减过程，建立了一种由三个固有中心和一个浅电子陷阱(SETs)组成的动力学模型，并引出一组微分方程.通过求解微分方程得到与实验结果相符合的光电子衰减曲线及其寿命.调整相 关模拟参数，于常温下得到由［Fe(CN)₆］^4-引入的SETs阱深为0.1 15eV，电子俘获截面为2.136×10^-17cm². 关键词： 光电子 浅电子陷阱 俘获截面 AgCl微晶     

掺杂的AgCl微晶在化学增感条件下的光电子衰减特性

利用微波吸收介电谱技术研究了K₄Fe(CN)₆浅电子陷阱掺杂剂和S+Au增感剂对立方体AgCl微晶光生电子衰减时间分辨特性的影响。结果表明,掺杂浓度为10-8～10-7 mol·mol-1Ag时,在增感之前,掺杂位置越接近表面时,光电子衰减过程会变慢,即衰减时间增加;S+Au增感后的掺杂乳剂中光电子衰减变快,说明了增感中心起深电子陷阱作用,当掺杂位置接近表面90%Ag时,光电子衰减时间突然减小,说明表面掺杂中心和增感中心可能发生了某些反应。     

甲酸根离子均匀掺杂的卤化银中的光电子特性

甲酸根离子(HCO-2)作为一种“空穴-电子转换剂”掺杂在卤化银中,可以提高潜影形成过程中光电子的利用率,俘获光生空穴,减少潜影形成过程中电子-空穴复合所造成的电子损失;同时还可以释放一个电子,提高感光效率。采用微波吸收介电谱检测技术,检测了不同浓度甲酸根离子均匀掺杂的立方体AgCl和AgBr乳剂在脉冲激光作用下所产生的光电子衰减信号。通过比较光电子的衰减时间和寿命,分析了甲酸根离子的空穴陷阱效应对立方体AgCl和AgBr乳剂中光电子衰减行为的影响,并得到了最佳均匀掺杂浓度（10^-5mol/molAg）。     

Determination of trap depth and trap density in Se70Te30−xZnx thin films using thermally stimulated current measurements

In the present paper concentration of traps (N_t) and trap depth (E_t) have been calculated by thermally stimulated current (TSC) measurements in amorphous Se₇₀Te_30−xZn_x (x=2, 4) thin films. These measurements are carried out at three different heating rates. It is observed that the amount of thermally stimulated current gradually increases and the temperature (T_m), at which maxima in TSC occurs, shifts to higher temperatures with increasing heating rates (β) as expected. The trap depth is found to be quite different for x=2 and x=4. The concentration of traps also increases slightly at higher concentration of Zn.     

Raman and brillouin scattering in a single crystal of K2Hg(CN)4

The temperature dependence of the elastic constants of cubic K₂Hg(CN)₄ has been measured by optical Brillouin spectroscopy in the temperature range from 300-110 K. A decrease of all three elastic constants was found in agreement with the results of ultrasonic measurements. Raman measurements in the temperature range from 300-4 K revealed a splitting of the F_2g modes corresponding to a trigonal distortion of the Hg(CN)₄-tetrahedra in the low temperature phase.     

Photoluminescence of Eu single doped and Eu/Dy codoped Sr2Al2SiO7 phosphors with long persistence

This paper reports the preparation of long persistent Sr₂Al₂SiO₇:Eu²⁺ and Sr₂Al₂SiO₇:Eu²⁺, Dy³⁺ phosphors and the comparison of their photoluminescent properties. The silicate phosphors prepared by solid-state reaction routine showed a broad blue emission peaking at 484 nm when activated by UV illumination. Such a bluish-green emission can be attributed to the intrinsic 4f-5d transitions of Eu²⁺. After the UV source was switched off, long persistent phosphorescence could be observed by naked eyes for both samples in darkness. Afterglow measurements revealed that Eu/Dy codoped phosphor possesses better afterglow properties than the Eu single doped one, since the maximum lifetime (τ_max=99 s) of the photons calculated from the decay profile is much larger than that of the Eu single doped phosphor (τ_max=82 s). TSL results suggested that the difference in afterglow properties was caused by the difference in the electron traps within the crystal lattice. For Eu/Dy codoped phosphor, the doping of Dy ions produced electron traps with trap depth of 0.52 eV, which is suitable and therefore leads to good persistence. However, in the case of Eu single doped phosphor, the trap depth is 0.88 eV, which is really too deep an energy barrier to overcome, and therefore a poor persistence was observed in the experiment.     

Spin-glass behavior of the polyvinyl pyrrolidone-protected Prussian blue analog K1.14Mn[Fe(CN)6]0.88 nanocubes

Prussian Blue analog K_1.14Mn[Fe(CN)₆]_0.88 nanocubes were synthesized by using polyvinyl pyrrolidone (PVP) as a protective matrix. The PVP-protected MnFe PBA nanocubes with face centered cubic structure are well dispersed with a narrow size distribution of around 50 nm. A spin-glass behavior (including hysteresis, a peak in the zero-field-cooled magnetization and frequency-dependent AC magnetic susceptibility) is observed in the nanoparticles. A possible origin of this spin-glass freezing is discussed. Spin disorder due to the structural defects may be the reason that causes the spin-glass freezing in the MnFe PBA nanoparticles.     

掺有浅电子陷阱的AgCl微晶的光电子衰减谱的时间分辨特性

利用微波吸收技术研究了K4Ru(CN)6浅电子陷阱掺杂剂对立方体AgCl微晶光生电子时间分辨特性的影响。结果表明,掺杂剂的掺杂量以及掺杂位置对乳剂的光生电子时间分辨特性都有影响。掺杂量为245×10-5mol·(molAg)-1,掺杂位置75%Ag时自由电子的衰减最慢,寿命最长。