共查询到19条相似文献,搜索用时 109 毫秒
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光谱增感技术可使卤化银感光材料实现对全波段感光,同时光谱增感技术在现代光信息记录与存储、光电器件、太阳能转换与存储等领域具有重要的应用.应用微波吸收介电谱技术研究了立方体氯化银吸附感绿菁染料后的光电子衰减特性,建立了氯化银光电子衰减动力学模型,根据此模型结合光电子衰减实验结果对光谱增感染料吸附在卤化银表面的电子陷阱效应进行了分析.研究结果表明:当染料以单分子态吸附在卤化银表面时,染料起浅电子陷阱效应;染料以J聚集体吸附在卤化银表面时,染料起到了深电子陷阱效应.浅电子陷阱与深电子陷阱效应的临界浓度为每40g
关键词:
感绿染料
氯化银
光电子衰减
电子陷阱效应 相似文献
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基于氧化层空穴俘获和质子诱导界面陷阱电荷形成物理机制的分析,分别建立了MOS结构电离辐射诱导氧化层陷阱电荷密度、界面陷阱电荷密度与辐射剂量相关性的物理模型.由模型可以得到,在低剂量辐照条件下辐射诱导产生的两种陷阱电荷密度与辐射剂量成线性关系,在中到高辐射剂量下诱导陷阱电荷密度趋于饱和,模型可以很好地描述这两种陷阱电荷与辐射剂量之间的关系.最后讨论了低剂量辐照下,两种辐射诱导陷阱电荷密度之间的关系,认为低辐射剂量下两者存在线性关系,并用实验验证了理论模型的正确性.该模型为辐射环境下MOS器件辐射损伤提供了更
关键词:
MOS结构
辐射
界面陷阱
氧化层陷阱 相似文献
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基于氧化层陷阱电荷以及界面陷阱电荷的产生动力学以及辐射应力损伤的微观机理,推导出了金属-氧化物-半导体场效应管(MOSFET)中辐射应力引起的氧化层陷阱电荷、界面陷阱电荷导致的阈值电压漂移量与辐射剂量之间定量关系的模型. 根据模型可以得到:低剂量情况下,氧化层陷阱电荷与界面陷阱电荷导致的阈值电压漂移量与辐射剂量成正比;高剂量情况下,氧化层陷阱电荷导致的阈值电压漂移量发生饱和, 其峰值与辐射剂量无关,界面陷阱电荷导致的阈值电压漂移量与辐射剂量呈指数关系. 另外,模型还表明氧化层陷阱电荷与界面陷阱电荷在不同的辐射剂量点开始产生饱和现象, 其中界面陷阱电荷先于氧化层陷阱电荷产生饱和现象.最后,用实验验证了该模型的正确性. 该模型可以较为准确地预测辐射应力作用下MOSFET的退化情况. 相似文献
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从理论上提出光折变材料中光电导过程的陷阱作用机制,给出了载流子的光激发,复合及俘获过程的动力学方程,得到了陷阱作用下的光生量子效率的解析表达式,实验上,对掺杂不同浓度的C60(C70)的PVK薄膜的光生载流子量子效率随光强度的变化关系进行了测量,得到了与理论预测相一致的结果。 相似文献
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基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式.利用初始1/f噪声功率谱幅值与氧化层空穴俘获之间的联系,建立了辐照前的1/f噪声幅值与辐照诱生界面陷阱数量之间的半经验公式,并通过实验予以验证.研究结果表明,由于辐照诱生的氧化层内陷阱通过与分子氢作用而直接参与到界面陷阱的建立过程中,从而使界面陷阱生成数量正比于这种陷阱增加的数量,因此辐照前的1/f噪声功率谱幅值正比于辐照诱生的界面陷阱数量.研究结果为1/f噪声用作MOSFET辐照损伤机理研究的新工具,对其抗辐照性能进行无损评估提供了理论依据与数学模型.
关键词:
辐照效应
界面陷阱
1/f噪声
氧化层空穴俘获 相似文献
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K. A. Nasyrov V. A. Gritsenko 《Journal of Experimental and Theoretical Physics》2011,112(6):1026-1034
The theory of charge transport in dielectrics by tunneling between traps is developed. In contrast to the Frenkel model, traps
in silicon nitride are characterized by two energies, optical and thermal ones, and ionization occurs by the multiphonon mechanism.
The theory predicts that tunneling between such traps is thermally stimulated: the half-difference of the optical and thermal
energies plays the role of the activation energy. This theory successfully explains the experimental current-voltage characteristics
of silicon-enriched silicon nitride. Such silicon nitride contains a large number of traps whose nature is associated with
excess silicon. Charge transport in this material occurs by tunneling between adjacent traps. 相似文献
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研究了GaN基HEMT器件表面电荷和体陷阱的变化对输出特性的影响.通过分析表面电荷与体陷阱对电流坍塌效应、饱和电流和膝点电压的影响,初步确定了其变化关系.研究结果显示表面电荷的增加能够耗尽二维电子气,减弱电流坍塌效应,降低饱和电流,使膝点电压非正常后移.同时,体陷阱的减小可以有效减弱电流坍塌效应,增大饱和电流,且膝点电压基本保持不变.晶格温度较低时,热电子效应和量子隧穿效应对电流坍塌效应影响显著.采用流体动力学模型,分析了引起电流坍塌效应的内在物理机制,并获得了器件设计和制备的优化方案. 相似文献
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研究了GaN基HEMT器件表面电荷和体陷阱的变化对输出特性的影响.通过分析表面电荷与体陷阱对电流坍塌效应、饱和电流和膝点电压的影响,初步确定了其变化关系.研究结果显示表面电荷的增加能够耗尽二维电子气,减弱电流坍塌效应,降低饱和电流,使膝点电压非正常后移.同时,体陷阱的减小可以有效减弱电流坍塌效应,增大饱和电流,且膝点电压基本保持不变.晶格温度较低时,热电子效应和量子隧穿效应对电流坍塌效应影响显著.采用流体动力学模型,分析了引起电流坍塌效应的内在物理机制,并获得了器件设计和制备的优化方案.
关键词:
GaN-HEMT器件
电流坍塌效应
热电子效应
表面电荷 相似文献
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A study of the role of deep traps in the specific features of the thermoluminescence (TL) of anion-defect α-Al2O3 single crystals is reported. The existence of deep traps is proven by direct observation of the associated TL peaks. Experimental
support for the effect of deep-trap filling on the main characteristics of the main TL peak at 450 K is presented. A model
involving trap interaction is proposed, which differs radically from the others described in the literature by taking into
account the temperature dependence of the carrier capture probability by deep traps. This model was used to calculate the
dependences on heating rate and deep-trap filling of the main parameters of the main TL peak for the crystals under study
(TL yield, glow-curve shape, and sensitivity to the stored light sum), which were found to be close to those observed experimentally.
Fiz. Tverd. Tela (St. Petersburg) 40, 229–234 (February 1998) 相似文献
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A. M. Emel’yanov 《Physics of the Solid State》2010,52(6):1131-1137
The parameters of electron and hole traps in thermal silicon dioxide films prepared in dry oxygen have been investigated using
avalanche injection of electrons and holes from silicon in combination with measurements of capacitance-voltage and current-voltage
characteristics of photoinjection of electrons from junctions with variations in the conditions of oxidation, annealing, and
storage of Si-SiO2 structures. The model concepts proposed by the author for water-related charge carrier traps in such films have been confirmed.
It has been found that the transport characteristics of the traps depend on the time of contact between Si-SiO2 structures and atmospheric air of natural humidity. The results obtained can be used for the suppression of degradation processes
in devices based on Si-SiO2 structures, in the design of electroluminescent instruments based on Si-SiO2 structures, and in the study of the transport characteristics of some molecules (for example, water), atoms, and ions in
pores (structural channels) whose sizes are comparable to the sizes of water molecules. 相似文献
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Charge transfer near the threshold of polymer film transition (induced by a low uniaxial pressure) to the high-conductivity
state is studied in an attempt to tackle the question of how the energy band structure of a wide-gap organic insulator varies
near this threshold. The I-V characteristics of poly(diphenylenephthalide) films of various thickness versus uniaxial pressure are analyzed. The results
obtained are treated within the model of space-charge-limited injection currents. The parameters of the injection model, such
as the equilibrium concentration of electrons, electron mobility, the occupation of traps, etc., are estimated. It is concluded
that deep traps due to an excess charge may appear in the energy gap of the polymer near the imref. This probably causes a
narrow subband to arise, and charge transfer via this subband increases the charge carrier mobility and, hence, conductivity. 相似文献
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Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors 下载免费PDF全文
An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to1 MHz.The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal.The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data.Simulations indicate thatthe capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface,with negligible effects from the traps far from the interface,and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed.In addition,by excluding the negligible effect of oxide-trap conductance,the model avoids the use of imaginary numbers and complex calculations,and thus is simple and intuitive. 相似文献
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The sublinearity of dose characteristics of the thermoluminescence has been calculated in terms of the model of competitive interaction of electron and hole trapping centers. It has been found that the sub-linearity is caused by the nonradiative electron recombination with hole deep traps during irradiation and recording of the thermoluminescence upon linear heating of a dosimetric phosphor. It has been shown that the proposed sublinearity mechanism can be used to explain the dose characteristics of the thermoluminescence of anion-defective aluminum oxide. 相似文献
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The behavior of TL, OSL and PTTL under thermal and/or optical stimulation in beta-irradiated -Al2O3 was investigated. The noticeable change of the shape of the main TL peak after thermal or optical stimulation clearly shows that this peak is related to at least two traps. The OSL curves recorded after preheating up to a given increased end temperatures are described by two exponential decays curves. The first one is associated to the decay of the traps responsible for the main TL peak. The second exponential is related with the phototransfer from the deep to the main traps. A simple model of the OSL process, based on simultaneous refilling of shallow traps and their reverse filling due to phototransfer from deep traps, under illumination with light is proposed. The model describes well the obtained experimental data. 相似文献