不同增感对AgCl乳剂中光电子时间行为的影响

借助微波吸收介电谱检测技术,对AgCl立方体乳剂中光电子的时间行为进行了检测,同时获得了自由光电子与浅束缚光电子在不同增感条件下的时间分辨谱。实验结果表明：化学增感时由于硫加金增感中心的浅电子陷阱作用有效地抑制了空穴与光电子之间的复合,化学增感使得光电子的衰减相对未增感的减缓、衰减时间得到延长;光谱增感时由于染料J聚集体增加了卤化银晶体中添隙银离子的浓度、促进了光电子与添隙银离子之间的结合,光谱增感使得光电子的衰减相对未增感的加剧、衰减时间变短;化学与光谱共同增感使光电子的衰减时间在光谱增感的基础上得到了延长,且硫加金化学增感中心的浅电子陷阱效应在光谱增感的基础上更明显。     

纳米硫化镍增感的溴化银微晶中光电子衰减特性研究

利用微弱信号的微波吸收相敏检测技术, 获得了纳米硫化镍增感的立方体溴化银乳剂中, 在增感时间增加的条件下, 自由光电子和浅束缚光电子的时间衰减曲线.分析了采用纳米硫化镍进行增感的溴化银乳剂中光生电子随增感时间衰减的过程, 讨论了卤化银晶体中电子陷阱对光电子运动行为的影响, 分析了电子陷阱效应及陷阱深度同增感时间之间的关系. 通过未增感样品与增感样品的衰减曲线对比, 得到了在此实验条件下的最佳增感时间为80min. 关键词： 纳米硫化镍 衰减时间 电子陷阱 寿命     

S+Au增感中心的电子陷阱效应对光电子行为的影响

利用微波吸收相敏检测技术，对AgBrI-T颗粒乳剂中自由光电子与浅束缚光电子时间行为进行了检测，结果表明在一级衰减曲线的不同区域中增感中心对光电子衰减的作用表现不同；S+Au增感中心的电子陷阱效应随浓度的增加发生了由浅电子陷阱到深电子陷阱的转变.根据增感浓度与光电子衰减时间的对应关系，获得了S+Au最佳增感浓度. 关键词： 微波相敏检测 光电子 增感 电子陷阱     

甲酸根离子掺杂的AgCl乳剂增感后的光电子特性研究

甲酸根离子作为一种“空穴－电子转换剂”掺杂在卤化银中可以提高潜影形成过程中光电子的利用率。将不同位置甲酸根离子掺杂的立方体AgCl乳剂又经相同条件的硫加金或感绿染料增感后，采用微波吸收介电谱检测技术对样品在脉冲激光作用下所产生的光电子衰减信号进行检测，通过分析光电子的衰减特性，发现甲酸根离子仍然能发挥其空穴陷阱效应，而且自由光电子的衰减时间和寿命与未增感的掺杂乳剂随掺杂位置的变化趋势一致。     

化学增感对光电子时间分辨谱的影响

利用微波吸收相敏检测技术,对AgBrI-T颗粒乳剂中光电子时间行为进行了检测,并获得了自由光电子与浅束缚光电子的时间分辨谱。实验结果表明,在加入Na₂S₂O₃相同的条件下S与S+Au增感中心所起的电子陷阱作用不同,S增感中心所起的作用为深电子陷阱,增感中心由于增加了对光电子的深束缚,从而造成自由光电子与浅束缚光电子的衰减加剧;S+Au增感中心所起的作用为浅电子陷阱,增感中心通过暂时束缚光电子有效降低了光电子与光空穴的复合,减缓了自由光电子与浅束缚光电子的衰减,可见加入KAuCl₄后形成的S+Au增感中心陷阱深度要比S增感中心的陷阱深度浅。从光电子时间分辨谱的变化可以看出S与S+Au增感中心在衰减曲线的不同时域中对光电子衰减的作用表现不同。     

卤化银微晶中光电子衰减谱的特性

光电子在卤化银材料潜影形成过程中发挥着重要的作用 ,光电子衰减行为在很大程度上决定于卤化银的晶体结构。采用光学与微波双共振技术 ,测量了自由光电子和浅俘获光电子的衰减谱 ,得到了卤化银中电子陷阱的密度和深度分布。以自由光电子寿命为纽带 ,通过分析掺杂卤化银晶体中电子陷阱的分布情况 ,可以确定浅电子陷阱掺杂剂的最佳掺杂浓度。     

掺杂的AgCl微晶在化学增感条件下的光电子衰减特性

利用微波吸收介电谱技术研究了K₄Fe(CN)₆浅电子陷阱掺杂剂和S+Au增感剂对立方体AgCl微晶光生电子衰减时间分辨特性的影响。结果表明,掺杂浓度为10-8～10-7 mol·mol-1Ag时,在增感之前,掺杂位置越接近表面时,光电子衰减过程会变慢,即衰减时间增加;S+Au增感后的掺杂乳剂中光电子衰减变快,说明了增感中心起深电子陷阱作用,当掺杂位置接近表面90%Ag时,光电子衰减时间突然减小,说明表面掺杂中心和增感中心可能发生了某些反应。     

感绿菁染料J-聚集体吸附在氯化银微晶表面的吸收光谱

染料J-聚集体对于现代彩色信息记录与存储材料、生物光电子器件、光合作用、太阳能转换与存储等方面具有十分重要的应用前景和理论意义。感绿菁染料在适当浓度时,对立方体氯化银微晶有增感效应,文章应用吸收光谱法对增感后的氯化银微晶样品进行了研究。研究表明, 增感染料浓度低于0.02 mL(染料浓度为5.0 mg·mL-1)/40 g乳剂时,感绿菁染料在立方体氯化银表面不形成J-聚集体,吸收光谱没有J-聚集体吸收峰出现;当染料浓度高于0.2 mL(染料浓度为5.0 mg·mL-1)/40 g乳剂时,染料开始在立方体氯化银微晶表面聚集并形成J-聚集体,吸收光谱有J-聚集体吸收峰出现。随染料浓度进一步增加,J-聚集体的吸收明显加强,吸收峰有微小的红移。     

光谱增感剂对AgBr微晶光电子衰减时间特性的影响

本工作利用高时间分辨的微波吸收薄膜介电谱测量技术,测量了菁染料光谱增感后的AgBr晶体在35ps超短脉冲激光曝光后产生的自由光电子和浅俘获光电子随时间衰减的光电子衰减时间分辨谱,分析了不同的染料增感条件对材料光电子时间特性的影响关系,实验验证了吸附在T-颗粒(111)晶面上的染料比吸附在立方体(100)晶面上的染料更有效、更有助于形成潜影的论据。     

摄影光学 感光材料与性能测试

TQ571.2 2006032396还原增感浓度对AgCl光电子衰减的影响=Influence ofsensitization concentration on photoelectron decay of AgClemulsion[刊,中]/李晓苇(河北大学物理科学与技术学院.河北,保定(071002)) ,张伟…∥河北大学学报(自然科学版) .—2006 ,26(2) .—148-151 ,156利用微波介电检测技术,测得自由光电子与浅束缚光电子衰减行为随还原增感浓度的变化。实验发现,还原增感浓度低时,增感中心起空穴陷阱作用;还原增感浓度高时,增感中心起深电子陷阱作用。根据光电子衰减行为随增感浓度的变化得到了最佳增感浓度。图4参10(严寒)TQ…     

The influence of trapping centres on the photoelectron decay in silver halide

Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment.     

The trapping effect of sulfur sensitization center Ag_2S cluster on T-grain AgBrI microcrystals

Chemical sensitization is a widely adopted technique that improves the photo-graphic sensitivity of silver halide crystals with basic emulsion. Sensitization centers,which can save photoelectrons in the process of latent-image formation, have beenformed on microcrystals after chemical sensitization. Therefore, chemical sensitizationwas widely adopted for many years. Sulfur sensitization is an important chemical sen-sitization technique in all chemical sensitization methods. First, in 1925, Sh…     

The trapping effect of sulfur sensitization center Ag<Subscript>2</Subscript>S cluster on T-grain AgBrI microcrystals

The microwave absorption dielectric-spectrum technique was used to study the decay kinetics of photoelectrons in sulfur-sensitized silver halide crystals. The time-resolution spectrum of free electrons and shallow-trapped electrons generated in sulfur-sensitized AgBrl crystals has been obtained. The relationship of the trapping effect of sensitization centers Ag₂S and sensitization time or temperature in emulsions has been duscussed. With the increase in the sensitization time and temperature, the trap effect of sulfur sensitization centers varies from hole trap to shallow electron trap, and deep electron trap.     

Kinetics study of ultrafast electron transfer from sensitized dyes to silver halide microcrystals

Spectral sensitization micromechanism of cyanine dyes J-aggregate adsorbed on the tabular and cubic AgBr microcrystals with different dye concentrations is studied by using picosecond time-resolved fluorescence spectroscopy, and the dependences of electron transfer and spectral efficiency sensitization on different conditions are analysed in detail. With the steady spectroscopy, the wavelengths of absorption and fluorescence of J-aggregate adsorbed on AgBr microcrystals are found to shift to red relative to dye monomer. The spectrum of fluorescence has a red shift relative to the absorption peak. With the time-resolved fluorescence spectroscopy, the fluorescence decay curves of cyanine dyes J-aggregate adsorbed on the tabular and cubic AgBr grains are found to be fitted well by a double-exponential decay function. The fitting curves consist of a fast and a slow component. Because of the large amplitude of the fast component, this fast decay should be attributable mainly to the electron transfer from J-aggregate of dye to a conduction band of AgBr.     

Investigation of the photoelectron decay of silver halide microcrystal

The microwave absorption dielectric spectrum can be used to study the decay process of free photoelectrons and shallow-trapped electrons in semiconductor crystals. The decay curve of free photoelectrons and shallow-trapped electrons of silver halide grains is measured using this technique. The influence of iodide and K_4Fe(CN)_6 shallow electron trap dopants on the photoelectron lifetime of silver halide grains is studied. For the unsensitized cubic AgCl crystals, when the free photoelectron lifetime (FLT) reaches a maximum, the photographic efficiency is optimal. From our analysis, we conclude that FLT is the longest for the cubic AgCl crystals doped with 0.5% iodide at 80% doping position and 1×10^{-6} mol K_4Fe(CN)_6/molAg, whereas, for the highly photosensitized cubic AgBrCl crystals doped with K_4Fe(CN)_6, the photographic efficiency is optimal when the FLT reaches its minimum. The free photoelectron lifetime reaches minimum and the sensitivity of AgBrCl emulsion reaches maximum when the doping position is 30%Ag at K_4Fe(CN)_6 content of 10^{-6}mol/molAg.