碳纳米管薄膜周期结构的太赫兹表面等离子波特性研究

在获得太赫兹波段碳纳米管薄膜的介电特性基础上,利用数值THz时域光谱技术研究了碳纳米管薄膜栅周期结构的表面等离子激元的传播特性和局域化现象. 研究结果表明,在栅周期为168 μm时,频率在0.5-2.5 THz之间出现两个等离子模式的共振峰值,分别位于0.99 THz和1.95 THz,这与理论计算结果相符合. 数值计算的表面等离子激元传播距离与理论预测值相一致,达到了146 μm. 此外,分析了栅厚度与栅宽度变化对表面等离子波特性的影响. 关键词： 太赫兹 碳纳米管 表面等离子波     

High on/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperatures

A theoretical study is presented on the on/off current ratio limits for a ballistic coaxially-gated carbon nanotube field effect transistor (CNTFET) with highly doped source/drain regions. Based on changes in gate insulator dielectric constant and thickness, the current ratio has been estimated at different ambient temperatures. Decreasing the gate insulator thickness after a certain value around 3 nm causes the current ratio to degrade drastically. Although the higher dielectric constant values have a fair effect on current ratio, this effect could be suppressed when the device with a low gate insulator thickness works at a low ambient temperature. The simulation results also show that the temperature drastically degrades the current ratio value; whereas in a certain range of ambient temperature, tuning the values of gate insulator thickness and dielectric constant could be very helpful. In this way, the optimum values of gate insulator thickness and dielectric constant are identified to offer the highest on/off current ratio of the device.     

一种平行栅碳纳米管阵列阴极的场发射特性研究

建立一种平行栅碳纳米管阵列阴极,利用悬浮球模型和镜像电荷法进行计算,给出碳纳米管顶端表面电场与电场增强因子的解析式. 在此基础上,进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响. 分析表明,碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳,靠边缘部位的碳纳米管发射电子能力比其中心部位的大;除碳纳米管的长径比之外,栅极宽度和栅极间距也对电场增强因子有一定作用;接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流,而接触电阻高于800 kΩ时,器件对阳极驱动电压的要求更高. 关键词： 平行栅碳纳米管阵列 悬浮球 场增强因子 接触电阻     

Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO₂ buffer layer. The gate dielectric with 10? (1?= 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000℃, excellent interface properties, high dielectric constant (k=14) and low gate-leakage current (I_g=1.9×10^-3A/cm² @V_g=V_fb-1V for EOT of 10?). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.     

Electronic transport properties of junctions between carbon nanotubes and graphene nanoribbons

Using the tight-binding model and Green’s function method, we studied the electronic transport of four kinds of nanotube-graphene junctions. The results show the transport properties depend on both types of the carbon nanotube and graphene nanoribbon, metal or semiconducting. Moreover, the defect at the nanotube-graphene interface did not affect the conductance of the whole system at the Fermi level. In the double junction of nanotube/nanoribbon/nanotube, quasibound states are found, which cause antiresonance and result in conductance dips.     

Eightfold shell filling in a double-wall carbon nanotube quantum dot

We fabricated a quantum-dot device consisting of an individual double-wall carbon nanotube and studied its electrical transport properties at low temperatures. In the negative bias region, the gate modulation curve exhibited quasiperiodic current oscillations, attributed to the Coulomb blockade of single-electron tunneling. We observed both four- and eightfold shell filling in the Coulomb diamond structures. The observation implies an eightfold degeneracy in the single-particle energy levels, which is higher than the fourfold degeneracy of a single-wall carbon nanotube. We show that the observed eightfold shell filling is a unique characteristic of a double-wall carbon nanotube quantum-dot device.     

基于异质双栅电极结构提高碳纳米管场效应晶体管电子输运效率

为改善碳纳米管场效应晶体管(CNTFET)器件性能, 提高电子输运效率, 提出了一种异质双金属栅(HDMG)电极结构CNTFET器件. 通过对单金属栅(SMG)-CNTFET器件输运模型的适当修改, 实现了对HDMG-CNTFET器件电子输运特性的研究.研究结果表明, 对于所提出的HDMG结构器件, 如果固定源端金属栅S-gate的功函数W_GS使其等于本征CNT 的功函数, 而选取漏端金属栅D-gate的功函数W_Gd, 使其在一定范围内小于W_GS, 可优化器件沟道中的电场分布, 提高器件沟道电子平均输运速率; 同时由于HDMG-CNTFET的D-gate对沟道电势具有调制作用, 使该器件阈值电压降低, 导致在相同的工作电压下, HDMG-CNTFET器件具有更大的通态电流; 而D-gate对漏电压的屏蔽作用又使HDMG-CNTFET与SMG-CNTFET相比具有更好的栅控能力 及减小 漏极感应势垒降低效应、热电子效应和双极导电性等优点. 本研究通过合理选取HDMG-CNTFET双栅电极的功函数, 有效克服了现有研究中存在的改善CNTFET性能需要以减小通态电流为代价的不足, 重要的是提高了器件的电子输运效率, 进而可提高特征频率、减小延迟时间, 有利于将CNTFET器件应用于高速/高频电路. 关键词： CNTFET 异质双栅 电子输运效率 双极导电性     

剪切形变对硼氮掺杂碳纳米管超晶格电子结构和光学性能的影响

碳纳米管作为最先进的纳米材料之一, 在电子和光学器件领域有潜在的应用前景, 因此引起了广泛关注. 掺杂、变形及形成超晶格为调制纳米管电子、光学性质提供了有效途径. 为了理解相关机理, 利用第一性原理方法研究了不同剪切形变下扶手椅型硼氮交替环状掺杂碳纳米管超晶格的空间结构、电子结构和光学性质. 研究发现, 剪切形变会改变碳纳米管的几何结构, 当剪切形变大于12%后, 其几何结构有较大畸变. 结合能计算表明, 剪切形变改变了掺杂碳纳米管超晶格的稳定性, 剪切形变越大, 稳定性越低. 电荷布居分析表明, 硼氮掺杂碳纳米管超晶格中离子键和共价键共存. 能带和态密度分析发现硼氮交替环状掺杂使碳纳米管超晶格从金属转变为半导体. 随着剪切形变加剧, 纳米管超晶格能隙逐渐减小, 当剪切形变大于12%后, 碳纳米管又从半导体变为金属. 在光学性能中, 剪切形变的硼氮掺杂碳纳米管超晶格的光吸收系数及反射率峰值较未受剪切形变的均减小, 且均出现了红移.     

Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics

For the first time, the potential impact of high-κ gate dielectrics on carbon nanotube field-effect transistors (CNTFETs) is studied over a wide range of dielectric permittivities using a two-dimensional model. It is found that the high-κ CNTFETs afford high ON currents and subthreshold swings near its theoretical limit. Likewise average electron velocity at the top of the barrier increases. Key transistor performance parameters, transconductance and carrier mobility improve for high-κ CNTFETs.     

Electrical transport and noise in semiconducting carbon nanotubes

We investigate electrical transport and noise in semiconducting carbon nanotubes. By studying carbon nanotube devices with various diameters and contact metals, we show that the ON-currents of CNFETs are governed by the heights of the Schottky barriers at the metal/nanotube interfaces. The current fluctuations are dominated by 1/f noise at low-frequencies and correlate with the number of transport carriers in the device regardless of contact metal.     

Development of polyurethane multiwall carbon nanotubes (MWCNTs) novel polymeric nanodielectric material

Polyurethane/multi-walled carbon nanotube nanodielectric thin films of 25 μm thick were prepared by solution grown method. The microstructure of the nanodielectric was examined by scanning electron microscopy. The MWCNTs are observed to be dispersed in PU matrix well apart from a few of clusters. The MWCNTs/polymer nanodielectrics characterized with decrease in energy band gap and crystallinity. The analysis of dielectric properties of the composite samples of different weight ratio was studied by measuring the permittivity and tangential loss at room temperature. The frequency dependent permittivity obeys the percolation theory. Further, it has been observed that the dielectric properties of PU and PU nanodielectric are unaffected by UV-irradiation. XRD characteristics confirm the formation of PU/MWCNTs nanodielectrics.     

Nanotube devices: A microscopic model

A microscopic model is developed for calculating electrostatic properties of nanotube devices. It is shown that the quantum-mechanical approach yields the same results as the statistical calculation in the limit of a thin tube suspended over a conducting gate at a distance exceeding the nanotube radius. A closed analytic expression is obtained for the atomistic capacitance of a straight nanotube and for a nanotube with a modest curvature. This method allows the fast and exact calculation of device parameters for the nanotube electromechanical systems and nanotube electronic devices.     

Dynamics and dissipation induced by single-electron tunneling in carbon nanotube nanoelectromechanical systems

We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system to SET strongly depends on the electronic environment of the quantum dot, in particular, on the total dot capacitance and the tunnel coupling to the metal contacts. Our findings suggest that one could achieve quality factors of 10(6) or higher by choosing appropriate gate dielectrics and/or by improving the tunnel coupling to the leads.     

Measuring the thermal conductivity of a single carbon nanotube

Although the thermal properties of millimeter-sized carbon nanotube mats and packed carbon nanofibers have been readily measured, measurements for a single nanotube are extremely difficult. Here, we report a novel method that can reliably measure the thermal conductivity of a single carbon nanotube using a suspended sample-attached T-type nanosensor. Our experimental results show that the thermal conductivity of a carbon nanotube at room temperature increases as its diameter decreases, and exceeds 2000 W/mK for a diameter of 9.8 nm. The temperature dependence of the thermal conductivity for a carbon nanotube with a diameter of 16.1 nm appears to have an asymptote near 320 K. The present method is, in principle, applicable to any kind of a single nanofiber, nanowire, and even single-walled carbon nanotube.     

Electronic transport properties of metallic single-walled carbon nanotubes

We have calculated the differential conductance of metallic carbon nanotubes by the scatter matrix methon.It is found that the differential conductance of metallic nanotube-based devices oscillates as a function of the bias voltage between the two leads and the gate voltage.Oscillation period T is directly proportional to the reciprocal of nanotube length.In addition,we found that electronic transport properties are sensitive to variation of the length of the nanotube.     

Effects of CNT inclusions on structure and dielectric properties of PVDF/CNT nanocomposites

ABSTRACT

The effects of multiwall carbon nanotube (CNT) inclusions on the crystalline structure of poly(vinylidene fluoride) (PVDF), and on the dielectric properties of PVDF/CNT nanocomposites (NCs), prepared by melt mixing, were investigated by employing X-ray diffraction, differential scanning calorimetry, and dielectric spectroscopy techniques. Our results imply that, in the NCs, the formation of β-phase crystals depends on specific compression treatment in the melt and fast cooling. Dielectric measurements on NCs, with CNT concentrations below the electrical percolation threshold, reveal that the dielectric strength of the two relaxation processes in the amorphous phase and dielectric permittivity, ?′, measured within the broad temperature range from ?150 °C to 60 °C, increase strongly with increasing CNT concentration. This enhancement of amorphous PVDF polarizability has been attributed to the increase of the local electric field, due to local polarization generated at the surface of conductive inclusions/CNT clusters.     

Surface and electrical properties of organic-inorganic hybrid structure as gate insulator to organic thin film transistor

Carbon-based OTFT devices were fabricated using a plasma process for the gate electrode and gate insulators. A nanocrystalline carbon (nc-C) film was used as the gate electrode, and three different layers, cyclohexene, diamond-like carbon (DLC), and cyclohexene/DLC (hybrid insulator), were used as the gate insulator. The surface and electrical properties of the three different gate insulators on the nc-C gate electrode were investigated using the SPM method, and the leakage current density and dielectric constant of the metal-insulator-metal (MIM) structures with three different insulator layers were evaluated. The hybrid insulator layer had a very smooth surface, approximately 0.2 nm, a uniform surface without defects, and good adhesion between the layers. Overall, it is believed that the hybrid insulator lead to a decrease in the electrical leakage current and an improvement in the device performance.     

ZA27/CNT界面特性电子理论研究

依据原子结合能定义了界面结合能. 采用递归法计算了纳米管增强锌铝基复合材料中ZA27/CNT界面电子结构，揭示了纳米管在ZA27合金晶界分布的微观物理本质，及其ZA27/CNT弱界面结合的电子层面的原因. 研究发现：金属基体对纳米管增强相上的碳原子态密度影响很大，而纳米管对基体金属中的铝、锌原子影响很小. 碳原子态密度与基体金属原子趋于同化，使纳米管与基体金属结合，但因同化程度不高导致界面结合较弱，影响强化效果. 如果在纳米管装饰或镀上与基体金属性质相近的原子层，会极大改善复合材料的界面结合强度，提高复合材料性能. 关键词： 复合材料 纳米管 电子结构 界面     

Investigation of Schottky-Barrier carbon nanotube field-effect transistor by an efficient semi-classical numerical modeling

An efficient semi-classical numerical modeling approach has been developed to simulate the coaxial Schottky-barrier carbon nanotube field-effect transistor (SB-CNTFET). In the modeling, the electrostatic potential of the CNT is obtained by self-consistently solving the analytic expression of CNT carrier distribution and the cylindrical Poisson equation, which significantly enhances the computational efficiency and simultaneously present a result in good agreement to that obtained from the non-equilibrium Green's function (NEGF) formalism based on the first principle. With this method, the effects of the CNT diameter, power supply voltage, thickness and dielectric constant of gate insulator on the device performance are investigated.     

碳纳米管复合吸波涂层微波吸收性能的模拟计算

如何利用碳纳米管复合吸波涂层的参数进行吸波性能优化是电磁屏蔽研究的热点之一.涂层参数对吸波性能影响的研究主要停留在实验探索阶段,而碳纳米管的结构参数对吸波性能影响的研究鲜有报道.因此,从微观结构层次研究涂层参数对吸波性能的影响有重要意义.基于多壁碳纳米管的等效电路,利用碳纳米管结构参数与等效电路各元件参数的关系,研究了碳纳米管损耗微波的机理,建立了碳纳米管结构参数与微波反射率的关系式.根据此关系式,利用Matlab软件模拟计算了碳纳米管管长、管径、涂层中碳纳米管的含量以及涂层厚度对微波反射率的影响.模拟计算结果表明:涂层的微波反射率随碳纳米管含量变化的模拟曲线与实验结果符合;碳纳米管含量和厚度是影响吸收峰位置和吸收强度的重要参量,而碳纳米管直径和长度是主要影响吸收峰强度的参量.