bcc Fe中刃型位错的结构及能量学研究

基于位错理论，利用分子动力学方法建立了〈100〉{010}，〈100〉{011}，1/2〈111〉{011}和1/2〈111〉{112}刃型位错的芯结构，并计算了这四种刃型位错的形成能、位错芯能量和芯半径.计算结果表明：〈100〉{010}和〈100〉{011}刃型位错的形成能比1/2〈111〉{011}和1/2〈111〉{112}刃型位错的要高，这表明〈100〉刃型位错比1/2〈111〉刃型位错更难形成.而〈100〉{010}和〈100〉{011}刃型位错的芯半径比1/2〈111〉{011}和1/2〈111〉{112}刃型位错的小，这说明在1/2〈111〉刃型位错中位于奇异区的原子数多于〈100〉刃型位错，而这些原子要比完整晶体中的原子具有更大的活性.可见，1/2〈111〉刃型位错比〈100〉刃型位错更易运动，且〈100〉刃型位错在bcc Fe中难以形成. 关键词： bcc Fe 刃型位错 分子动力学模拟     

Effect of isotropic stress on dislocation bias factor in bcc iron: an atomistic study

The effect of externally applied stress on the dislocation bias factor (BF) in bcc iron has been studied using a combination of atomistic static calculations and finite element integration. Three kinds of dislocations were considered, namely, a₀/2〈1 1 1〉{1 1 0} screw, a₀/2〈1 1 1〉{1 1 0} edge and a₀〈1 0 0〉{0 0 1} edge dislocations. The computations reveal that the isotropic crystal expansion leads to an increasing or constant dislocation bias, depending on the Burgers vector and type of dislocation. On the other hand, compressive stress reduces the dislocation bias for all the dislocations studied. Variation of the dislocation BF depending on dislocation type and Burgers vector is discussed by analysing the modification of the interaction energy landscape and the capture efficiency values for the vacancy and self-interstitial atom.     

bcc Fe的刃型位错中氦-空位团的稳定性

 采用周期性原子阵列方法建立bcc Fe中的刃型位错,利用分子动力学计算了0 K时bcc Fe的位错芯里氦-空位团的稳定性,并与理想Fe晶体里氦-空位团的稳定性进行比较发现,位错的作用导致氦-空位团不稳定。点缺陷（He、空位与自间隙Fe原子）与氦-空位团的结合能与团中氦-空位比例密切相关,当氦与空位数之比在3~6时,结合能趋于稳定。     

Analytical methods for the calculation of the elastic interaction of point defects with dislocation loops in hexagonal crystals

The Green’s function method for hexagonal crystals within the Lifshitz–Rosenzweig (1947) and Kröner (1953) approaches has been used to obtain analytical expressions for the energy of elastic interaction of radiation-induced point defects with dislocation loops of three types: the basal edge dislocation loop (cloop), the basal shear dislocation loop, and the edge a-loop (bedding plane {11 20}, Burgers vector b ^D = 1/3〈11 20〉). In the case of the basal edge dislocation loop, a similar expression has been obtained independently by solving the equilibrium equations using the Elliott method. A numerical comparison of the derived expressions for zirconium has demonstrated a complete identity of the results obtained within the approaches considered in this study.     

Elastic energy of a straight dislocation and contribution from core tractions

We derive an expression of the core traction contribution to the dislocation elastic energy within linear anisotropic elasticity theory using the sextic formalism. With this contribution, the elastic energy is a state variable consistent with the work of the Peach–Koehler forces. This contribution needs also to be considered when extracting from atomic simulations core energies. The core energies thus obtained are real intrinsic dislocation properties: they do not depend on the presence and position of other defects. This is illustrated by calculating core energies of edge dislocation in bcc iron, where we show that dislocations gliding in {110} planes are more stable than those gliding in {112} planes.     

β—SiC外延层中晶体缺陷的观察

用腐蚀法研究了β-SiC外延层中的晶体缺陷。腐蚀剂为熔融氢氧化钾。三角形尖底蚀坑对应于位错。在β-SiC中的全位错为立方晶系的73°位错和60°位错。不同堆垛方式的β-siC生长层相遇时将形成{111}交界层错,其腐蚀图象为平行于<110>方向的直线。60°位错可分解为两个1/6<112>SchockLey不全位错,并夹着一片{111}层错构成扩展位错。三个1/6<110>压杆位错与三片{111}层错可构成层错锥体。正、反堆垛的β-SiC可形成尖晶石律双晶,双晶面为(111)。腐蚀法和X射线劳厄法证实了这种双晶的存在。 关键词：     

Dislocations in Fe-3% Si alloy single crystals deformed at a higher rate

The method of etching dislocations is used to study the distribution of dislocations and twins in Fe-3% Si alloy single crystals prepared from the melt after plastic deformation with higher speed. The crystals are deformed by twinning in the 〈111〉 directions along the {112} planes and by slip in the 〈111〉 directions along the {110} planes. The results prove that the dislocations causing plastic deformation move in the {110} planes during both fast and slow deformation. The difference in the slip surfaces during fast and slow deformation is explained by the different number of cross slips per unit dislocation path.     

Atomic configuration of a 12〈111〉 {110} edge dislocation in α-Fe

The atomic arrangement around a $\text{1}\text{2}$〈111〉 {110} edge dislocation in an α-Fe crystallite embedded in an elastic continuum is calculated, using the Johnson-I interatomic potential. A narrow dislocation without any stacking fault results, although there is some displacement in the core parallel to the dislocation line.     

Effect of the alpha-gamma phase transition on the stability of dislocation loops in bcc iron

Body-centered-cubic iron develops an elastic instability, driven by spin fluctuations, near the alpha-gamma phase transition temperature T(c) = 912 degrees C that is associated with the dramatic reduction of the shear stiffness constant c' (c(11)-c(12))/2 near T(c). This reduction of c' has a profound effect on the temperature dependence of the anisotropic elastic self-energies of dislocations in iron. It also affects the relative stability of the a[100] and a/2[111] prismatic edge dislocation loops formed during irradiation. The difference between the anisotropic elastic free energies provides the fundamental explanation for the observed dominant occurrence of the a[100], as opposed to the a/2[111], Burgers vector configurations of prismatic dislocation loops in iron and iron-based alloys at high temperatures.     

Studies of threading dislocations in Nb(011) films

We obtain strain contrast in low-energy electron microscopy, by dark-field imaging of the strain-sensitive variants of a surface reconstruction. This is employed to make visible the strain fields of dislocations in Nb(011) thin single-crystal films. The strain field symmetries reveal the dislocation Burgers vectors and identify the existence of [111] a /2 and [100] a Burgers vectors for threading dislocations in these epitaxial materials. The contrast also allows interfacial and screw dislocations to be imaged.     

Peierls-nabarro barrier and stress of a/2 〈111〉 edge dislocation in α-Fe

The Peierls-Nabarro barrier and stress of thea/2〈111〉 edge dislocation on {112} and {110} plane inα-Fe at O K is calculated within the Peierls-Nabarro model. The method proposed by Nabarro is used, however, the sine force law is replaced by more general force laws based on two central interionic potentials inα-Fe. The values of the Peierls-Nabarro stress corresponding to one of the chosen interionic potentials, 3·5×10^?4 μ and 1×10^?4 μ on {112} plane (in the twinning direction) and on {110} plane, respectively, seem to be good estimates of the stress necessary to move edge dislocations inα-Fe at O K.     

Changes in the Burgers vector of perfect dislocation loops without contact with the external dislocations

We report the observations of a new type of changing process in the Burgers vector of dislocations by in situ transmission electron microscopy. Small interstitial-type perfect dislocation loops in bcc iron with diameters less than approximately 50 nm are transformed from a 1/2<111> loop to another 1/2<111> one or an energetically unfavorable <100> one; furthermore, a <100> loop is transformed to a 1/2<111> one. These transformations occurred on high-energy electron irradiation or simple heating without contact with external dislocations. The origin of these phenomena is discussed.     

单晶铜纳米线屈服机理的原子模拟研究

采用分子静力学方法模拟了〈100〉单晶铜纳米线的拉伸变形过程,研究了纳米线屈服的机理. 结果表明：1） 纳米线初始屈服通过部分位错随机激活的{111}〈112〉孪生实现,后继屈服通过{111}〈112〉部分位错滑移实现;2） 纳米线变形初期不同滑移面上的部分位错在两面交线处相遇形成压杆位错,变形后期部分位错在刚性边界处塞积,两者都阻碍位错滑移,引起一定的强化作用. 关键词： 纳米线 屈服 位错 分子静力学     

集中力作用下硅中位错结构

本文用化学侵蚀法研究了硅单晶样品在800—1000℃印压得到的位错“花结”。实验结果说明:印压产生的位错分布在{111}滑移面上;位错线的取向大部分是<110>或<112>方向。分析并观察到在压印下有两种位错环,一种是柏格斯矢量沿<110>方向并平行于(111)印压面;一种是柏格斯矢量沿<110>方向并与印压面相交。对位错环的结构进行了分析。     

Etch pits in AgCl crystals

Single crystal sheets have been prepared by the capillarity method. The dislocations can be revealed with a sodium thiosulphate solution at surface orientations from two regions in the basic triangle. These are: region A around 001 pole up to ≈25°, and region B around 111 pole up to ≈pa 10°. In the remaining region C of the basic triangle the dislocations do not etch. In region A the etch pits have the shape of pyramids. In region B they are triangular pyramidal in shape. Evidence is given that the edge and screw components of annealed and fresh dislocations are revealed by etching. At surface orientations near either the {00l} or {111} planes the slip can be activated in such zones 〈110〉 that are nearly parallel to the surface of the sheets. The slip bands are then straight and predominantly of the edge type.     

LiNbO3晶体中包裹物和位错的X射线形貌研究

用X射线透射扫描形貌方法研究了LiNb0₃晶体中的包裹物和位错。在实验中发现了包裹物的相应于不同衍射矢量的X射线形貌与基于各向同性理论预言的形貌之间存在分歧,这被解释为弹性各向异性效应。同时还观察到Burgers矢量为最短点阵平移矢量1/3的纯刃型位错和次短点阵平移矢量1/3<0111>的纯螺型位错,以及由该螺型位错组成的纯扭转晶界。 关键词：     

Orientation effects in interaction of screw dislocation with interstitial impurity atom in b.c.c. lattice

The cross-slip and pinning of a 1/2a〈111〉 screw dislocation in b.c.c. metals in the vicinity of an interstitial impurity atom are studied in dependence on crystal orientation. To this purpose, the interaction energy between the dislocation and an interstitial atom is calculated in an anisotropic elastic continuum and it is assumed that the screw dislocation moves microscopically on {112} or {110} planes between its stable configuration positions in b.c.c. lattice. It is found that the probability of induced cross-slip is orientation dependent. This result is used for discussion of orientation dependence of the change of CRSS due to increased carbon content which was experimentally determined for Fe-3.2% Si alloy single crystals in a previous paper (Blahovec J., Kade?ková S.: Czech. J. Phys.B 21 (1971), 846).     

铝镁合金中位错的运动与交滑移

本文研究了在电子显微镜的照明电子束作用下,铝镁合金中位错运动与交互作用的行为。螺型位错往往单个运动,并且很容易改变运动方向,产生多次双交叉滑移。滑移和交滑移首先在与膜面接近45°的{111}面上进行,位错的柏氏矢量为接近膜面的α/2<110>,这是与照明电子束所产生的应力与膜面平行一事相符的。运动着的位错可以通过其应变场激活近邻的位错,使之发生运动;亦可能受到其它位错的排斥作用而受阻或改变运动方向。     

Which stresses affect the glide of screw dislocations in bcc metals?

By direct application of stress in molecular statics calculations we identify the stress components that affect the glide of 1/2?111? screw dislocations in bcc tungsten. These results prove that the hydrostatic stress and the normal stress parallel to the dislocation line do not play any role in the dislocation glide. Therefore, the Peierls stress of the dislocation cannot depend directly on the remaining two normal stresses that are perpendicular to the dislocation but, instead, on their combination that causes an equibiaxial tension-compression (and thus shear) in the plane perpendicular to the dislocation line. The Peierls stress of 1/2?111? screw dislocations then depends only on the orientation of the plane in which the shear stress parallel to the Burgers vector is applied and on the magnitude and orientation of the shear stress perpendicular to the slip direction.     

Interaction of Lomer–Cottrell locks with screw dislocations

In fcc crystals, dislocations are dissociated into partial dislocations and, therefore, restricted to move on {111} glide planes. By junction reactions with dislocations on two intersecting {111} planes, Lomer–Cottrell dislocations along ?110? directions can be formed which are barriers for approaching screw dislocations. Treating the interaction between a dissociated screw dislocation and a LC lock conventionally, using classical continuum theory and assuming the partials to be Volterra dislocations, leads to erroneous conclusions. A realistic result can only be obtained in the framework of the Peierls model, treating the partials as Peierls dislocations and explicitly taking account of the change in atomic misfit energy in the glide plane. At even moderate stresses (at less than 3 × 10^?3 µ in Cu), the screw will combine with the LC lock to form a Hirth lock. As a result, the nature of the repulsive force will change drastically.