The nuclear contribution to the specific heat of single crystals of YBa2Cu3O7 and Bi2Sr2CaCu2O8

Specific heat data below 1 K of Bi₂Sr₂CaCu₂O₈ and YBa₂Cu₃O₇ are analyzed. For YBa₂Cu₃O₇ the nuclear specific heat, C_N, amounts to 38T⁻² μJ/mol K. C_N for Bi₂Sr₂CaCu₂O₈ exceeds that of YBa₂Cu₃O₇ by a factor of 15. The nuclear quadrupolar specific heat contribution alone is insufficient to explain the data for YBa₂Cu₃O₇, while lack of NQR data does not allow such a comparison in Bi₂Sr₂CaCu₂O₈ to be made. The contribution to C_N from nuclear spins coupled via the contact hyperfine interaction with correlated magnetic spins (in the CuO₂ plane) is derived as a function of the correlation length. This contribution can be treated independently from the quadrupolar term. We show that the excess specific heat in YBa₂Cu₃O₇ likely originates in a few percentage of an impurity (oxygen deficient) phase with a strong hyperfine field on the Cu nuclei.     

The a---b anisotropy in Bi2Sr2CaCu2O8 superconductor: An investigation by Raman spectroscopy

In the present paper, we report a study of the Raman active phonons of Bi₂Sr₂CaCu₂O₈ for frequencies extending down to 20 cm⁻¹ and temperatures ranging from 77 to 673 K. In spite of important changes in the spectra occurring under heating, we show that the a---b anisotropy, exemplified by Raman spectroscopy in Bi₂Sr₂CaCu₂O₈ and obvious on the macroscopic scale through the crystal morphology, still persists at 673 K. These changes are interpreted in terms of disordering effects in the BiO planes and speak in favor of an order-disorder transition around 500 K.     

O KVV Auger emission versus resonant photoemission at the O K edge of high-Tc superconductors

Photoelectron spectroscopy results on single crystals of the superconductors Bi₂Sr₂CaCu₂O₈,Bi₂Sr₂CuO₆, Ba_0.6K_0.4BiO₃ and the semiconductor Ba_0.9K_0.1BiO₃ are reported for the photon energy region around the O K absorption threshold. The development of the O-KVV Auger structure has been carefully monitored as a function of photon energy. A non-monotonic behavior displaying a feature at a constant binding energy of about 14 eV was found for Bi₂Sr₂CaCu₂O₈ and Bi₂Sr₂CuO₆ in a narrow photon energy region of 1 eV at the main edge of the O K absorption spectrum around 530 eV. The corresponding enhancement, connected with the autoionization of O 2p states, is absent in Ba_1−xK_xBiO ₃ in contrast to Bi₂Sr₂CaCu₂O₈ and Bi₂Sr₂CuO₆. The resonant enhancement is more pronounced for Bi₂Sr₂CuO₆ as compared to Bi₂Sr₂CaCu₂O₈, which can be explained by a lower charge carrier concentration in the former case, leading to a more localized nature of intermediate O 2p states. The model parameters Cu d–d and O p–p Coulomb interactions and the charge transfer energy Δ are estimated from the experiments.     

Modelling of the reactive interface formation on Bi2Sr2CaCu2O8

We have applied the phenomenological model of diffused interfaces, developed originally to describe the Fe growth on Bi₂Sr₂CaCu₂O₈, to interpret quantitatively the core photoemission spectra of two reactive interfaces, namely Cr and Ge on Bi₂Sr₂CaCu₂O₈. At room temperature the interfaces with Fe and Cr have the same kinetics of growth suggesting similar adatom condensation, while the semiconductor-superconductor interface grows layer-by-layer according to the Franck-van der Merwe kinetics. Differences in the parameters of the model resulting from the simultaneous fit of the core-level decays are related to differences in the microscopic processes occurring during the growth.     

Bi2Sr2CaCu2O8的晶体结构与超导性能

本文研究了Bi-Sr-Ca-Cu-O体系中理想成份为Bi₂Sr₂CaCu₂O₈化合物的超导性能和晶体结构。名义成份为BiSrCaCu₂O_5.5零电阻超导转变温度T_c(0)=81.5K。用X射线粉末衍射方法测定了Bi₂Sr₂CaCu₂O₈的晶体结构,其基本结构属体心四方晶系,空间群为D_4h¹⁷-l4/mmm,点阵常数a=3.825?,c=30.82?。每单胞化合式单位为2.2Ca占据2(a)等效点系,4Sr,4Bi和4Cu占据三组4(e)位置,其原子参数z分别为0.110,0.302和0.445,16O分别占据8(g),z=0.445和二组4(e),z=0.210和0.380。Bi₂Sr₂CaCu₂O₈晶体结构可认为是阳离子沿z轴的(00z)和((1/2)(1/2)z)交错排列,由Aurivillius相导生出来的。讨论了在Bi-Sr-Ca-Cu-O体系中可能存在的其它沿z轴不同堆垛层数的超导相。 关键词：     

Angle-resolved photoemission study of nonsuperconductive Bi2Sr2Ca0.4Y0.6Cu2O8

A comparative angle-resolved photoemission measurement has been performed on nonsuperconductive Bi₂Sr₂Ca_0.4Y_0.6Cu₂O₈ and superconductive Bi₂Sr₂CaCu₂O₈ to study the nature and origin of the electronic states near the Fermi level. It was found that hole-doping does not cause a rigid shift of the density of states relative to the Fermi level, but creates new electronic states in the vicinity of the Fermi level.     

Evidence for pinning by (Sr,Ca)2CuOy particles in partial-melting processed bulk Bi2Sr2CaCu2O8+δ ceramics

Flux distributions of partial-melting processed Bi₂Sr₂CaCu₂O_8+δ ceramics are obtained using magneto-optic imaging. In remanent states (μ₀H_a=0 T), large amounts of trapped flux are observed along (Sr,Ca)₂CuO_y particles embedded in the Bi₂Sr₂CaCu₂O_8+δ matrix. Despite the relatively large size of these particles (up to 30 μm), the pinning effect is similar to that of Y₂BaCuO₅ particles in melt-processed YBa₂Cu₃O_7−δ. Furthermore, we discuss how the pinning capability of non-superconducting particles of different sizes and densities will show up in magneto-optic images.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.     

Observation of the flux line lattice in high Tc-superconductor Bi2.2Sr2CaCu2OX and Ti2Ba2CaCu2OX single crystals

The flux-line lattice (FLL) has been observed on the (001) face of high T_c Bi_2.2Sr₂CaCu₂O_X and Ti₂Ba₂CaCu₂O_X single cristals using the technique of decorating the sample with small ferromagnetic particles. Strong pinning of the Abrikosov vortices by plane defects along (100) and (010) planes has been found out on Bi_2.2Sr₂CaCu₂O_X. The triangular FLL with a long-range order has been observed on the perfect Ti₂Ba₂CaCu₂O_X single crystal. The penetration depth for a magnetic field parallel to (001) axis has been evaluated as ≤0.2μm at 4.2K for both materials.     

Zero-field current-voltage characteristics in high-temperature superconductors

We have observed the anomalous magnetization of Bi₂Sr₂CaCu_2−xNi_xO₈ (x = 0 and 0.02) single crystals. Anisotropy decreases with iodine intercalation although it expands the space between CuO₂ layers. Iodine intercalation seems to suppress the magnetization anomaly for Ni = 1% crystals, but not for Ni = 1% substituted crystals. We have discussed these results in terms of the increase of anisotropy by Ni substitution and the dimensional crossover of flux lines. Effects of both oxygen concentration and substitution of a magnetic element for the Cu site on the anisotropy of Bi₂Sr₂CaCu₂O₈ crystals show the same tendency as the case of the YBa₂Cu₃O₇ superconductor.     

Intergranular properties of YBCO and BSCCO ceramic superconductors at low fields

Isothermal low-field AC susceptibility measurements have been used to analyze the intergranular critical current density J_c(T) on sintered, non-oriented YBa₂Cu₃O_7−δ and Bi₂Sr₂CaCu₂O_8+δ ceramic samples at zero field. Below the critical temperature, potential variations, J_c(T) ≈ (1−t_j)^m with t_j = T/T_j, have been found, T_j being the onset of grain's coherence, but with different exponents, supporting that different mechanisms limit the intergranular J_c values. Moreover, the effect of texture has been also considered on Bi₂Sr₂CaCu₂O_8+δ ceramics grown by the laser floating zone method, which have stronger intergranular junctions. Their high-temperature behaviour is limited by intrinsic effects, while at low temperatures the quality of the junctions is the limiting factor. The temperature dependence of the χ′(h₀) extrapolation at zero filed has also been correlated with the evolution of the intergranular penetration depth, λ_J(T).     

Structure and properties of Bi2Sr2CaCu2Ox/Bi2Sr2CuOx superlattices prepared by RF magnetron sputtering

We have prepared Bi₂Sr₂CaCu₂O_x/Bi₂Sr₂CuO_x (2212/2201) superlattices with various stacking periodicity by multitarget RF magnetron sputtering. Their crystal structure and electrical properties were investigated. The superlattice was found to be successfully constructed from the data of XRD patterns, AES, etc. The critical temperature increased almost linearly with increasing thickness of the 2212 phase up to a thickness of 6 unit cells. On the other hand, it did not decrease as the thickness of the 2201 layers was increased. The unit cell/unit cell superlattice showed T_{c zero} of 30 K.     

Effects of 230 MeV Au irradiation on Bi2Sr2CaCu2Ox

Bi₂Sr₂CaCu₂O_x tapes were irradiated using 230 MeV Au¹⁴⁺ ions. Columnar defects were presumably produced due to irradiation. Zero-field-cooling (ZFC) magnetization increased up to a fluence of 1.6 × 10¹¹ Au⁺/cm², but field-cooling (FC) magnetization decreased, indicating the strong pinning effects resulting from the columnar defects. The critical current density as well as the irreversibility field, obtained from the hysteresis loops, were enhanced. Irreversibility fields are fitted by H_irr = A exp(−T/T_A). An effective activation energy for flux motion was obtained from the measurements of magnetization relaxation. The features of flux pinning as a result of the columnar defects were compared with those of point defects brought about by 120 MeV O⁷⁺ irradiation.     

Oxygen nonstoichiometry effect on structural modulation in Bi-2212 cuprate superconductors

The X-ray diffraction patterns for Bi₂Sr₂Ca_1−xY_xCu₂O_8+y sintered in air or Ar indicated that the reduction in the number of excess oxygen ions induced a structural change from orthorhombic to pseudotetragonal. When the oxygen contents decreased with the reducing treatment, the period of modulation in Bi₂Sr₂Ca_1−xY_xCu₂O_8+y increased. This result supported the model of excess oxygen ions in the Bi---O sheet. However, it was difficult to understand the change of modulation period with increasing Y contents using the model of excess oxygen ions in the Bi---O layers. Also, it is included that the Y substitution for Ca and La substitution for Sr in the Bi₂Sr₂CaCu₂O_8+y system result in parallel effects for the modulation structure.     

Electrochemical reduction of Bi2Sr2Ca1Cu2O8 superconductor single crystals

Single crystals and polycrystalline pellets of the high-temperature cuprate superconductor Bi₂Sr₂Ca₁Cu₂O₈ were doped at room temperature by electrochemical reduction at > 95% Coulombic efficiency using lithium dopant ions in propylene carbonate electrolyte. Cyclic voltammetry and potential step measurements on single crystals suggest an unusual reduction mechanism, with a diffusion coefficient for Li⁺ in the c-axis direction of bulk superconductor of ca. 3 × 10⁻¹¹ cm²s⁻¹. Sintered pellets of polycrystalline powder could be doped more rapidly, with an apparent diffusion coefficient of 7 × 10⁻⁸ cm²s⁻¹. X-ray susceptibility analysis show extensive disordering occurs on heavy Li doping, with a first-order transition from a crystalline/superconducting to an amorphous/non-superconducting phase. Single, crystals of Bi₂Sr₂Ca₁Cu₂O₈ exhibited a color change on reduction from metallic gray to golden bronze. The reduced material was highly air-sensitive, forming a hydroxide surface film on exposure to ambient atmosphere.     

Angular dependence of the magnetization curves and interlayer Josephson coupling in Bi2Sr2CaCu2O8

Magnetization curves were measured for Bi₂Sr₂CaCu₂O₈ crystals which were irradiated with 5.8 GeV Pb ions along the c direction or at 45° with respect to it. Each ion produces continuous columnar that crosses the sample and yields a unidirectional pinning center. The density of the defects in the various samples ranges from 10¹⁰ to 2.5 X 10¹¹ ions/cm². In all the irradiated samples the width of the magnetization curves is found to be the largest for fields along the defects indicating that when the field is at other directions the vortices are tilted away from the defects. This manifests the important role of the Josephson coupling between the CuO₂ planes. We also report on accelerated flux escape around zero magnetization and around zero field, particularly in samples with a high dose of irradiation.     

Laser ablated bismuth cuprate thin films preparation and effect of oxygen nonstoichiometry upon superconductivity

Thin films of Bi₂Sr₂CaCu₂O₈ and (Bi, Pb)₂Sr₂Ca₂Cu₃O₁₀ have been prepared on monocrystalline (100) MgO substrates, using a laser ablation method with post annealing treatment. The influence of substrate temperature and oxygen pressure during deposition were investigated. SEM observations, EDS analysis, electric and magnetic measurements have been used to characterize the films. Superconducting “2212” films, with T_c(R = 0) at 80–83 K and J_c (50 K) up to 5 × 10⁵ A/cm², have been currently achieved, while Pb-doped “2223” films exhibit T_c as high as 110 K with J_c = 5 × 10⁴ A/cm² at 77 K. The effect of annealing at low temperature (350°C) in an argon flow has been studied for the 2212 phase, it shows the influence of the oxygen non-stoichiometry, i.e. of the hole carrier density upon T_c's which can be measured up to 89 K (zero resistance).     

Control of carbon impurities in 2212 superconducting phase

Bi₂Sr₂CaCu₂O₈ superconductor has been synthesized by the so-called liquid mix technique under different conditions. The influence of both carbon content and thermal treatments on the superconducting properties is discussed.     

Surface morphology and electrical properties of Bi---Sr---Ca---Cu---O thin films deposited by reactive sputtering from multiple targets

Smooth, superconducting films of Bi₂Sr₂CaCu₂O_8+° have been prepared by reactive sputtering from elemental targets in the presence of ozone. The influence of substrate temperature, deposition rate, and ozone pressure on the resulting films are discussed. Films deposited on SrTiO₃ substrates are c-axis oriented and featureless for substrate temperatures below 710°C. Above this temperature, small inclusions of CuO appear. Films on MgO exhibit mixed a-axis and c-axis orientation below about 710°C, and inclusions of CuO above this temperature. The temperature at which this transition occurs increases with increasing deposition rate. T_c increases and then decreases sharply with decreasing oxygen content. The oxygen partial pressure corresponding to the maximum T_c of 77 K is well above the thermodynamic stability limit for Bi₂Sr₂CaCu₂O_8+°, suggesting that an optimum carrier concentration has been achieved for these films.     

Physical characterization and vibrational spectroscopy of Bi(Pb) cuprate 2212 ceramics prepared by sol-gel

Samples of bismuth cuprate with and without lead substitution were prepared by the sol-gel method. The general formula was Bi_2−xPb_xSr₂CaCu₂O_8+δ, where 0≤x≤0.6. The samples were characterized by X-ray diffraction (XRD), electron probe microanalysis (EPMA), magnetic susceptibility, Raman spectroscopy and IR reflectance. Regarding homogeneity, density, purity and superconductivity, optimal behavior was found x = 0.2-0.4. An increase of hole concentration in the CuO₂-planes with Pb²⁺/Bi³⁺ ratio was observed from the optical data. The Raman spectra modifications with lead substitution are discussed. Evidence of the interaction between CuO₂-plane hole continuum and 150 cm⁻¹ IR active modes was found.