Modelling of the reactive interface formation on Bi2Sr2CaCu2O8

We have applied the phenomenological model of diffused interfaces, developed originally to describe the Fe growth on Bi₂Sr₂CaCu₂O₈, to interpret quantitatively the core photoemission spectra of two reactive interfaces, namely Cr and Ge on Bi₂Sr₂CaCu₂O₈. At room temperature the interfaces with Fe and Cr have the same kinetics of growth suggesting similar adatom condensation, while the semiconductor-superconductor interface grows layer-by-layer according to the Franck-van der Merwe kinetics. Differences in the parameters of the model resulting from the simultaneous fit of the core-level decays are related to differences in the microscopic processes occurring during the growth.