共查询到19条相似文献,搜索用时 203 毫秒
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通过各种材料的试验和压机设备因素的测定,总结了金刚石生长过程的特性:金刚石晶体是在石墨(G)-触媒(Me)界面上生长;因电阻R(G)>R(Me)、温度T(G)>T(Me)以及与外界热交换等原因,使合成腔内产生压力、温度梯度,成为金刚石生长之驱动力。梯度过大过小对金刚石生长均不利;金刚石晶体在G-Me界面两侧是非对称性生长;每个晶粒表面有一特殊结构约20 μm左右厚的金属薄膜,它起到运载碳源和催化的双重作用。要合成粗粒高强金刚石,需要有一个稳定的合成体系。本文分析了该体系状态的性质及稳定的必要性与稳定的具体方法。 相似文献
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为了探明从SiC生成金刚石这一过程中触媒作用的机理,有必要调查SiC加不同金属在高压高温下的行为。在本工作中,以16重量比混合的SiC和铁粉经5.4~6.0 GPa的高压力和1 300~1 500 ℃的高温处理20 min后,样品的X射线衍射分析表明:所有实验条件下SiC都发生了分解,并分别生成了Fe3Si和Fe3C;温度越高,SiC分解得越彻底,在温度高于1 375 ℃的样品中,伴随Fe3C减少,有金刚石和石墨明显析出。扫描电镜观察表明:6.0 GPa、1 500 ℃下所得的金刚石晶体具有完整的八面体晶形,平均粒度约50 μm。 相似文献
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通过对合成金刚石的原材料和合成产物——石墨、Ni70Mn25Co5触媒、普通人造金刚石、黑色人造金刚石、NiMnCoC熔体的磁化率测试,以及对黑色人造金刚石和普通人造金刚石破碎断面扫描电镜的对比分析,认为黑色人造金刚石形成低磁性的原因是由于合成过程中温度偏高、压力偏低,生长的金刚石质量差、裂纹多。晶体内夹杂了很多石墨与触媒包裹体,同时金刚石表面与金刚石晶体内的触媒包裹体之间形成贯穿性的裂纹。在金刚石化学提纯处理过程中,金刚石晶体内的铁磁性触媒包裹体杂质被通过裂纹进入的酸除去。因而在检测金刚石磁性时,黑色金刚石的磁性很小,呈弱磁性。 相似文献
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利用热力学中经典的ΔG<0判定法,探讨了Fe基触媒合成金刚石晶体生长中的碳源问题,在计算中考虑了各物相的体积随温度和压力的变化。结果表明:在金刚石形成之前,就有大量Fe3C形成,而在触媒法合成金刚石的温度和压力范围内,Fe3C→C(金刚石)+3γ-Fe反应自由能和石墨→金刚石相变自由能均为负值,但前者比后者的绝对值更大,这说明前者更容易发生。因此,从热力学角度看,Fe3C的形成降低了石墨转变为金刚石所要越过的势垒,使用Fe基触媒合成金刚石单晶的生长来源于Fe3C的分解而不是石墨的直接转化。同时推导出在1200 K以上石墨-金刚石的平衡p-T关系:peq(GPa)=1.036+0.00236T (K),与F.P.Bundy的平衡线非常接近,证明了本热力学计算方法的可行性。 相似文献
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在高温高压条件下,金属触媒与石墨形成的碳化物Me3C(Me为Fe、Ni)是形成金刚石结构的主要碳源。利用固体与分子经验电子理论(EET),计算了多种Me3C型碳化物和金刚石的价电子结构以及表征界面性质的电子结构参数,并将程氏理论(TFDC)提出的原子界面边界条件应用到碳化物/金刚石界面,发现碳化物晶胞中C—C键络组成的晶面与金刚石中的某些晶面的电子密度在一级近似下是连续的,但不同碳化物其连续程度不同,其中Co3C和(FeNi)3C中碳原子组成晶面的价电子结构与金刚石中的最接近,其C—C键转化为金刚石结构需要的能量最低。从电子结构角度上解释了催化机制及不同触媒的催化效果,价电子理论是探讨金刚石催化机制的新途径。 相似文献
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研究了炸药爆轰合成的纳米金刚石粉在高温(约1 600 K)、高压(5.2 GPa)条件下的行为。将纳米金刚石粉与粉末合金(Ni70Mn25Co5、100#)混合、压制成圆片,与合金片 (Ni70Mn25Co5)和人造石墨片一起交替放入高温高压合成腔体内,进行高温高压实验。实验结果表明:在高温高压条件下,纳米金刚石粉不能长大,反而石墨化了;在相同的高压和保温时间条件下,随着温度的降低,纳米金刚石粉的石墨化程度减弱,纳米金刚石粉的纳米颗粒长大,可长成0.1 mm尺寸的金刚石颗粒(温度为1 070 K左右)。而在此条件下,人造石墨不能合成金刚石,一般金刚石晶体要变成石墨相。这进一步表明,纳米金刚石颗粒表面的活性使得它可以在较低的温度下长成较大颗粒的金刚石。 相似文献
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Effects of Al and Ti/Cu on Synthesis of Type-IIa Diamond Crystals in Ni70Mn25Co5-C System at HPHT 下载免费PDF全文
High-quality type-Ⅱa gem diamond crystals are successfully synthesized in a NiToMn25Co5-C system by temperature gradient method (TGM) at about 5.5 GPa and 1560 K. Al and Ti/Cu are used as nitrogen getters respectively. While nitrogen getter Al or Ti/Cu is added into the synthesis system, some inclusions and caves tend to be introduced into the crystals. When Al is added into the solvent alloy, we would hardly gain high-quality type-Ⅱa diamond crystals with nitrogen concentration Nc 〈 1 ppm because of the reversible reaction of Al and N at high pressure and high temperature (HPHT). Piowever, when Ti/Cu is added into the solvent alloy, high-quality type-Ⅱa diamond crystals with Nc 〈 1 ppm can be grown by decreasing the growth rate of diamonds. 相似文献
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室温下Fe62Ni27Mn11(wt%)合金的压致fcc-hcp相变 总被引:1,自引:0,他引:1
本文采用Mao-Bell型金刚石对顶砧(DAC)及高压在位(in situ)粉末X光衍射照相方法研究了Fe62Ni27Mn11(wt%)合金在0~43.2 GPa压力范围内的压致结构相变和等温压缩行为,实验结果表明,该合金在低压时为fcc结构,在19.4 GPa压力附近出现压致fcc→hcp结构相变,直到43.2 GPa一直保持fcc、hcp二相共存;相变过程中,二相的molar体积相同;高压hcp相得晶格参数比值c/a基本上不随压力而变,可以表示为c/a=1.630±0.006;在卸压过程中,hcp相可保持到5.8 GPa,当卸压到常压时,该合金完全恢复到fcc结构;用Murnaghan等温固体状态方程对其压缩数据进行最小二乘法拟合,得到B0=(166±12) GPa,B0'=5.2±0.5;本文还给出了该合金的压致fcc→hcp结构相变模型,并对存在很宽的二相共存区间问题进行了初步探讨。 相似文献
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本文采用高压X光衍射方法在金刚石对顶压砧中在位地(in situ)研究了Fe68Co24Ni8(wt%)合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构,晶格常数a0=(0.287 0±0.000 1) nm,体积V0=(7.119±0.007) cm3/mol,密度ρ0=(7.981±0.008) g/cm3;在20.9 GPa附近出现bcc→hcp结构相变,两相共存压力区约10 GPa,在此区域内有晶面间距d(002)hcp=d(110)bcc,且原子平面(002)hcp//(110)bcc,hcp相比bcc相体积减小(0.33±0.02) cm3/mol;高压相hcp结构的晶格参数比值c/a=1.608±0.004;相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%;用Murnaghan状态方程对实验数据进行最小二乘法拟合,得到bcc相B0=(130±13) GPa,B0'=12.6±0.5;hcp相V0=(6.62±0.04) cm3/mol,B0=(243±21) GPa,B0'=6.8±0.3;对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。 相似文献
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This paper reports that diamond single crystals were synthesized from sulfur-added Ni70Mn25Co5+C system under high pressure and high temperature(HPHT).It was found that additive sulfur had inhibited the nucleation and growth of diamond to some extent.X-ray diffraction of the collected sample indicated that under the synthesis conditions,a new compound MnS had been formed through the reaction of additive sulfur with manganese in the catalyst.The MnS has a fcc structure,and its average crystal size was about 30 nm.By scanning electron microscope,the {111} surface of diamond was found to be flat,while there was usually a large depression on the central region of {100}.Further observation showed that there were many small upside-down pyramidal pits in the expression.The results of x-ray photoelectron spectroscopy shows that MnS can only be detected in the depression in the range of detection precision.It was inferred that MnS had been dissolved in the melted alloy during the growth experiment,and precipitated in the sequent quenching process. 相似文献
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《Journal of magnetism and magnetic materials》2005,294(2):165-173
We report on studies of magnetotransport properties and structure at 5–300 K temperature region in glass-coated microwires prepared from immiscible (Co10Cu90 and Co29Ni25Mn1Cu45) elements. The crystalline structure consists of nanocrystals of Co (Ni) and Cu with average grain size below 30 nm. Considerable magnetoresistance (MR) (up to about 18%) is found in Co10Cu90 microwires depending on fabrication parameters. Magnetic field dependence of MR of Co10Cu90 microwires is completely un-hysteretic showing monotonic decay with magnetic field. On the other hand, MR (up to about 4%) is also found in as-prepared and annealed Co29Ni25Mn1Cu45 microwires. Annealing of Co29Ni25Mn1Cu45 microwires (973 K) results in increasing of the coercivity (Hc) from 65 up to 750 Oe. Annealed Co29Ni25Mn1Cu45 sample exhibits considerable hysteresis on magnetic field dependence of MR. Neutron and X-ray diffraction allows to attribute changes in magnetic properties and MR after annealing of Co29Ni25Mn1Cu45 microwires to the decomposition of the metastable phase. 相似文献
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Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature 下载免费PDF全文
We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, FesoNi20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction (XRD). Morphology of the sample is observed by a scanning electron microscope (SEM). Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230℃ and high pressure 4.8 GPa. This work provides an original method for synthesis of high quality hereto-semiconductor with cBN and diamond single crystals, and paves the way for future development. 相似文献