石墨烯沟道全自旋逻辑器件开关特性

由于石墨烯的电导率相比典型的金属材料更大,自旋弛豫时间更长,自旋轨道相互作用更弱,从而在相同的注入电流情况下,自旋电流在石墨烯材料中的耗散作用更弱.基于自旋传输和磁化动力学耦合模型,研究了石墨烯沟道全自旋逻辑器件的开关特性.结果显示,在相同的电源电压下和器件尺寸下,石墨烯沟道材料的全自旋逻辑器件磁矩翻转时间比Cu沟道更短,流入输出纳磁体的自旋电流更大.同时,长度越短、宽度越窄的沟道其开关时间更短,功耗更小.在满足磁体磁矩翻转的临界开关电流的情况下,石墨烯沟道的可靠工作长度也显著大于Cu沟道.所以石墨烯材料是相比于金属材料更理想的沟道材料.另外,通过合理选择沟道尺寸,能进一步降低器件开关时间和功耗.上述结论为全自旋逻辑器件的优化设计与应用提供了理论参考.     

扰动对有机磁体器件自旋极化输运特性的影响

基于紧束缚模型和格林函数方法,研究了有机磁体晶格扰动和侧基自旋取向扰动对金属/有机磁体/金属三明治结构有机自旋器件自旋极化输运特性的影响.计算结果表明:晶格扰动的存在降低了器件的起始偏压,减小了导通电流,并使得电流-电压曲线的量子台阶效应不再显著,扰动不太强时电流仍呈现较高的自旋极化率;而侧基自旋取向扰动减小了体系的自旋劈裂,增加了器件的起始偏压,低偏压下随着扰动的增强器件电流及其自旋极化率明显降低.进一步模拟了温度对器件自旋极化输运的影响. 关键词： 有机自旋电子学 有机磁体 自旋极化输运 自旋过滤     

短沟道金属-氧化物半导体场效应晶体管的散粒噪声模型

随着金属-氧化物半导体场效应晶体管(MOSFET)器件的尺寸进入到纳米量级,器件的噪声机理逐渐开始转变.传统的热噪声与漏源电流模型精度出现下降,散粒噪声成为器件噪声不可忽略的因素.本文通过求解能量平衡方程,推导了短沟道MOSFET器件的沟道电子温度和电子速度表达式,由此建立了漏源电流模型;基于漏源电流模型建立了适用于40 nm以下器件的散粒噪声模型和热噪声模型.研究了n型金属-氧化物半导体场效应晶体管(NMOSFET)器件在不同偏置电压下,器件尺寸对散粒噪声抑制因子和噪声机理的影响.研究表明:已有的热噪声模型与散粒噪声模型的精度随着器件尺寸的减小而下降,导致相应的散粒噪声抑制因子被高估.当NMOSFET器件的尺寸减小到10 nm时,器件的噪声需由热噪声与受抑制的散粒噪声共同表征.本文建立的短沟道器件散粒噪声模型可应用于纳米尺寸NMOSFET器件噪声性能的分析与建模.     

非对称条形纳磁体的铁磁共振频率和自旋波模式

通过建立微波激励下的非对称条形多铁纳磁体的微磁模型,研究了倾斜角和缺陷角对该形纳磁体的铁磁共振谱和自旋波模式的影响.通过对微磁仿真得到的动态磁化数据进行分析发现,非对称条形纳磁体倾斜角度增加,铁磁共振频率随之增加,而这一现象与纳磁体的缺陷角度无关.倾斜角不变,非对称条形纳磁体的铁磁共振频率与缺陷角度呈单调递增关系,并且不同缺陷角度纳磁体的自旋波模式显示出极大的差异.非对称条形纳磁体与矩形纳磁体相比,它的自旋波模式局部化,具体为非对称条形纳磁体的自旋波模式不对称且高进动区域存在于边缘,表现为非对称边缘模式.倾斜角改变导致纳磁体内部退磁场变化,引起纳磁体边缘模式的移动,而中心模式对倾斜角的变化并不敏感.最后,对建立的模型在高频微波磁场激励下的磁损耗进行了分析,验证了模型的可靠性.这些结论说明缺陷角和倾斜角可用于纳磁体自旋波模式和铁磁共振频率的调谐,所得结果为可调纳磁微波器件的设计提供了重要的理论依据和思路.     

纳米尺度金属-氧化物半导体场效应晶体管沟道热噪声模型

随着CMOS工艺的发展,热载流子效应对沟道热噪声的影响随着器件尺寸的降低而增大,传统热噪声模型未能准确表征沟道的热噪声.本文通过解能量平衡方程,得到电子温度表达式,并结合沟道漏电流表达式,建立了沟道热噪声模型.利用建立的电子温度表达式,该热噪声模型考虑了热载流子效应的影响,并且在计算热噪声的过程中考虑了电子温度对迁移率降低的影响以及温度梯度对热噪声的影响.通过分析与计算,结果显示,随着器件尺寸的减小,温度梯度对电子温度产生显著影响,使得热载流子效应的影响增大,热载流子效应对热噪声的增长作用超过了迁移率降低对热噪声的减小作用,最终导致热噪声增大.本文建立的沟道热噪声模型可应用于纳米尺寸金属-氧化物半导体场效应晶体管器件的噪声性能分析及建模.     

自旋霍尔纳米振荡器的非线性动力学及其应用

自旋霍尔纳米振荡器利用电流产生的自旋轨道力矩驱动磁性薄膜中磁矩进行高频进动，能在微纳尺度下实现全电学调控的相干自旋波和微波信号，是一类新型的纳米自旋电子学器件，在信息存储、处理和通信方面具有广泛的应用前景。基于强自旋轨道矩效应，人们近期在各类铁 磁/非磁重金属构成的双层薄膜结构中，已实现了多种不同自旋波模式的电学激发和调控，并对 其复杂的非线性动力学特性进行了深入的探究。基于这些前期的研究结果与最新的进展，我们在 本综述中对“对三角”结构的纳米间隙型、“蝴蝶结”型、纳米线型、垂直纳米点接触型以及阵 列等具有各类器件结构的自旋霍尔纳米振荡器所体现出来的丰富非线性动力学特性进行了详细讨 论与归纳，并对其在新型低能耗量子磁振子自旋器件和非冯诺依曼架构的自旋型人工神经网络计 算方面的潜在应用也进行了探讨。     

六配位FeN6自旋翻转化合物的自旋输运特性

本文采用第一性原理计算和非平衡格林函数方法,研究了六配位FeN₆的自旋输运特性. 理论计算结果表明在外场(如光辐射)作用下通过改变配体与磁芯间键长来实现磁体的高低自旋之间的转换. 基于计算得到的透射谱和伏安曲线,发现通过高自旋态分子结的电流显著大于低自旋态磁体,且通过高自旋态分子结的输运特性由自旋向下的电子提供主要贡献. 理论预测出来的分子开关和自旋过滤效应表明此类铁基六配体自旋翻转化合物可用于分子自旋电子学器件设计.     

界面铁掺杂锯齿形石墨烯纳米带的自旋输运性能

基于密度泛函理论第一原理系统研究了界面铁掺杂锯齿(zigzag)形石墨烯纳米带的自旋输运性能, 首先考虑了宽度为4的锯齿(zigzag)形石墨烯纳米带, 构件了4个纳米器件模型, 对应于中心散射区的长度分别为N=4, 6, 8和10个石墨烯单胞的长度, 铁掺杂在中心区和电极的界面. 发现在铁磁(FM)态, 四个器件的β自旋的电流远大于α自旋的电流, 产生了自旋过滤现象; 而界面铁掺杂的反铁磁态模型, 两种电流自旋都很小, 无法产生自旋过滤现象; 进一步考虑电极的反自旋构型, 器件电流显示出明显的自旋过滤效应. 探讨了带宽分别为5和6的纳米器件的自旋输运性能, 中心散射区的长度为N=6个石墨烯单胞的长度, FM 态下器件两种自旋方向的电流值也存在较大的差异, β自旋的电流远大于α自旋电流. 这些结果表明: 界面铁掺杂能有效调控锯齿形石墨烯纳米带的自旋电子, 对于设计和发展高极化自旋过滤器件有重要意义.     

一种数据非易失性、多功能和可编程的自旋逻辑研究进展

自旋(磁)逻辑器件具有数据非易失性、CMOS电路兼容性、操作速度快等优点,是开发计算存储相融合的非冯·诺依曼计算机架构的理想候选方案之一.本文进一步演示基于自旋霍尔效应的自旋逻辑方案.利用自旋霍尔效应不仅能够实现基本的布尔逻辑功能和数据存储功能,还可以利用自旋轨道力矩磁矩翻转的对称性要求、偏置磁场要求等,进一步实现自旋逻辑器件的可编程和多功能特性.利用这些特点,同一自旋霍尔逻辑器件可以实现"与"、"或"、"非"、"与非"、"或非"等功能.因为这些特性,基于自旋霍尔效应的自旋逻辑单元有望成为后续自旋逻辑器件和电路的核心器件,推动后者的持续开发与广泛应用.     

蒽二噻吩分子连接铁磁锯齿边碳化硅纳米带的巨幅度自旋整流

利用非平衡格林函数结合密度泛函理论,研究了顺式蒽二噻吩和反式蒽二噻吩分子连接锯齿边碳化硅纳米带的自旋输运特性,并在铁磁场下观察到自旋向上和自旋向下具有同方向的自旋整流特性.在铁磁场下,边缘碳原子或者硅原子双氢原子钝化可以改变锯齿边碳化硅纳米带的本征金属性,使其转变为半导体.顺式蒽二噻吩器件和反式蒽二噻吩器件的自旋向上电流-电压特性可以呈现显著的自旋整流效应,相应的最大自旋整流比分别接近10¹¹和10¹⁰.此外,由于自旋向上和自旋向下电流值之间的巨大差异,两个器件的电流-电压特性都在正偏压区域呈现出完美的自旋过滤行为.以上发现对未来设计自旋功能分子器件具有重要意义.     

Precessional switching of thin nanomagnets: analytical study

We study analytically the precessional switching of the magnetization of a thin macrospin. We analyze its response when subjected to an external field along its in-plane hard axis. We derive the exact trajectories of the magnetization. The switching versus non switching behavior is delimited by a bifurcation trajectory, for applied fields equal to half of the effective anisotropy field. A magnetization going through this bifurcation trajectory passes exactly along the hard axis and exhibits a vanishing characteristic frequency at that unstable point, which makes the trajectory noise sensitive. Attempting to approach the related minimal cost in applied field makes the magnetization final state unpredictable. We add finite damping in the model as a perturbative, energy dissipation factor. For a large applied field, the system switches several times back and forth. Several trajectories can be gone through before the system has dissipated enough energy to converge to one attracting equilibrium state. For some moderate fields, the system switches only once by a relaxation dominated precessional switching. We show that the associated switching field increases linearly with the damping parameter. The slope scales with the square root of the effective anisotropy. Our simple concluding expressions are useful to assess the potential application of precessional switching in magnetic random access memories.Received: 2 October 2003, Published online: 19 November 2003PACS: 75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.) - 75.60.Jk Magnetization reversal mechanisms - 75.75. + a Magnetic properties of nanostructures     

Magnetic non‐volatile flip‐flop with spin‐Hall assistance

A novel multi‐bit non‐volatile flip‐flop (NVFF) written by spin‐Hall‐assisted spin‐transfer torque (STT) is proposed. This NVFF employs perpendicular‐anisotropy MTJs and requires an STT current combined with a spin‐Hall current to write the data. Thanks to the assistance of spin‐Hall effect (SHE), the incubation delay required by the conventional STT switching can be eliminated to achieve fast operation. Our proposed NVFF uses multi‐bit architecture and shows high‐density and low‐energy advantages over hybrid NV/volatile FFs in the application of the NV register file. Sim‐ulation results show that the proposed spin‐Hall‐assisted NVFF saves ～31% storage density and ～32% energy dissipation compared with the conventional STT‐NVFF. Moreover, the reliability of MTJ barrier is enhanced due to the reduction of the write voltage. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device

We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage. This device possesses a nonresonant tunneling channel and two resonant tunneling channels. The Keldysh nonequilibrium Green's function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot. We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient. This result is attributed to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region. Importantly, an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages. Therefore, the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot.     

面内形状各向异性能对自旋转矩振荡器零场振荡特性的影响

利用Landau-Lifshitz-Gilbert-Slonczewski方程, 在理论上研究了由磁矩垂直于膜面的自由层和磁矩平行于膜面的极化层组成的自旋转矩振荡器的振荡特性. 数值结果表明面内的形状各向异性能, 可以使自旋转矩振荡器在无磁场情形下产生自激振荡. 此特性可以用能量平衡方程解释, 即面内形状各向异性能可以导致系统中自旋转矩提供的能量与阻尼过程所消耗的能量之间的平衡. 特别是, 面内的形状各向异性能越大, 自旋转矩振荡器的可操控电流范围越大, 并且产生微波信号的频率越大, 但其阈值电流几乎不变.     

电流感应磁化翻转效应的改进的系综模型

运用宏观双通道扩散模型研究了赝自旋阀结构中的自旋相关输运过程,考虑到磁化强度矢量的横向分量的影响,建立了自由层磁化强度矢量的动力学方程,利用自旋流连续和化学势差连续作为边界条件.理论计算求解了电流感应磁化翻转效应中的临界电流,解释了铁磁层和非磁层电导率匹配问题和纵向场对电流感应磁化翻转效应中临界电流的影响. 关键词： 赝自旋阀 电导率匹配 自旋转移扭矩 电流感应磁化翻转效应     

Influence of thickness on current-induced magnetization switching in L1_0-FePt single layer

The thickness dependent spin–orbit torque(SOT) in an L1_0-Fe Pt single layer is investigated in this work. As the thickness increases from 8 nm to 16 nm, the magnetization switching ratio in the L1_0-Fe Pt film with higher chemical ordering becomes smaller. It is noted that compared with 3-nm-thick L1_0-Fe Pt film, 8-nm-thick L1_0-Fe Pt film can switch much magnetization with the increase of chemical ordering. When the Fe Pt film is thick enough, the SOT in Fe Pt is closely related to the L1_0-ordered structure, which indicates a bulk nature. Therefore, the disordering plays an important role in the magnetization switching only for the ultra-thin Fe Pt films, while the structural gradient may play an important role for thicker films. However, both of the two mechanisms cannot fully explain the process of magnetization switching and the spin current generation. Although many factors influence SOT, here in this work we emphasize only the bulk nature of strong SOC in L1_0-Fe Pt through density functional theory calculations, which should generate large spin current due to spin Hall effect.     

NiFe/Pt薄膜中角度相关的逆自旋霍尔效应

NiFe/Pt双层薄膜样品在铁磁共振时, NiFe磁矩进动所产生的自旋流注入到Pt层中, 由于逆自旋霍尔效应产生直流电压V_ISHE, 此电压会叠加到NiFe薄膜由于自旋整流效应而产生的电压V_SRE 上, 实验测量所得电压为V_ISHE和V_SRE的叠加. 为了区分这两种不同机理对电压的贡献, 本文采取旋转外加静磁场的方法, 通过分析所测电压随磁场角度的变化从而分离出V_ISHE 的大小. 研究结果表明, 相比于单层NiFe(20 nm)薄膜样品, NiFe(20 nm)/Pt(10 nm)双层膜样品中由于NiFe自旋注入到Pt 中导致铁磁共振线宽增加. 与逆自旋霍尔效应产生的电压相比, 自旋整流效应的贡献较小, 但不可忽略. 本文工作有助于认清铁磁/非磁性金属材料中的自旋相关效应, 并提供了一种准确的分析逆自旋霍尔效应的方法.     

Anatomy of field effects on magnetization dynamics and spin transfer noise

Spin transfer-related phenomena in nanomagnets have attracted extensive studies. In this paper we shall focus on analysis of individual and combined effects of the external, anisotropy, and demagnetization fields on magnetization dynamics and spin transfer noise. It is found that individual roles of the external, anisotropy, and demagnetization fields, as well as the combined roles of external plus anisotropy fields and anisotropy plus demagnetization fields, do not change the behavior of current induced magnetization switching. Such magnetization reversal procedures are of low noise. Our dynamics and power spectral density calculations show that it is the demagnetization field that plays a major role in inducing spin transfer noise: the demagnetization field itself or in combination with the anisotropy field will result in wave-like switching; moreover, the demagnetization field, together with the external field (not too small), will lead to precession and hence the system would be in noisy states. Our modeling work for an elliptical Py alloy is qualitatively consistent with Cornell's experiment and simulation [Science 307 (2005) 228].     

Efficient magnetization reversal with noisy currents

We propose to accelerate reversal of the ferromagnetic order parameter in spin valves by electronic noise. By solving the stochastic equations of motion we show that the current-induced magnetization switching time is drastically reduced by a modest level of externally generated current (voltage) noise. This also leads to a significantly lower power consumption for the switching process.