Evaluation of the diffusion length of minority carriers in bulk GaAs

The diffusion length of minority charge carriers has been investigated in LEC GaAs, silicon-doped with doping density N_D - N_A ranging from 10¹⁶ to 10¹⁸ cm^-3, by surface photovoltage (SPV) and electron-beam-induced current (EBIC) of scanning electron microscopy (SEM) measurements. Au Schottky diodes have been evaporated along the diameter of wafers cut from different doping density ingots to determine the variation of minority carrier diffusion length with both the radial position on the slice and the carrier concentration. The diffusion length values obtained by optical and electron excitation enhance systematic differences, which can be explained by the different surface recombination weight in the carrier generation volume and by the injection level, too. In all the examined samples an M-shaped radial variation of the diffusion length has been observed; on the other hand, the mean value of L_p increases from 0.5 to 7 μm when the doping concentration increases. The authors correlate this distribution to the electrical inhomogeneity induced by native defects and associated recombination centres. The role of the dislocations, which induce two competitive effects, i.e. an enhanced recombination probability and a precipitate condensation, is here discussed.     

Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films

We have investigated on the molecular beam epitaxy (MBE) of Te-doped GaSb films on ZnTe buffer. Te-doped GaSb (GaSb:Te) films with and without ZnTe buffer were grown on (0 0 1) GaAs substrates. GaSb:Te/ZnTe/GaAs film revealed higher mobility (=631 cm²/V s) in comparison to GaSb:Te/GaAs film (=249 cm²/V s). To explain the higher mobility of GaSb:Te on ZnTe buffer, dislocation density and temperature dependence of Hall measurement results were analyzed. Temperature dependence of Hall measurement shows strong influence of the dislocation scattering, which indicates that dislocation reduction by the ZnTe buffer enhances the carrier mobility of GaSb films.     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

Impurity redistribution during laser irradiation in ion implanted silicon

(100) Silicon wafers implanted with 2 × 10^{15 31}P+/cm² at 100 keV have been annealed using a scanning beam of incoherent light. The main results obtained after annealing are: (a) the carrier concentration profile shows a complete dopant activation without diffusion of the implanted ions; (b) the values of carrier mobility are similar to those obtained by furnace annealing; (c) an improvement of minority carrier diffusion length is often observed; (d) a very good damage recovery is obtained. Transmission Electron Microscopy observations show that the residual damage is confined within a region at 0.2 μm depth and consists of dislocation loops of about 50 Å diameter. It is concluded that this technique can be used to obtain very good annealing of implanted layers.     

Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures

We have characterized the properties of three AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with two different well widths fabricated by molecular beam epitaxy on (0 0 1) GaAs substrates with different threading dislocation densities using room temperature photoreflectance (PR) and photoluminescence (PL). The samples were denoted as A, B and C with well widths of 140, 160 and 160 Å, respectively. Samples A and B were grown on substrates with lower threading dislocation densities. For samples B and C, the well width exceeds the pseudomorphic limit so that there is some strain relaxation and related misfit dislocations, as determined from X-ray measurements. In order to detect the anisotropic strain of the misfit dislocations related to strain relaxation, the PR measurements were performed for incident light polarized along [1 1 0] and directions. Evidence for the influence of the strain relaxation upon the relaxed channel was provided by the observed anisotropy of the polarized PR features and reduction of the intensity of PL signals in the InGaAs channel layer. The lowest lying intersubband transition has been confirmed by a comparison of the PR and PL spectra. Signals have been observed from every region of the sample making it possible to evaluate the In and Al compositions, channel width and two-dimensional electron gas density as well as the properties of the GaAs/AlGaAs multiple quantum well buffer layer.     

用阶跃恢复法测定砷化镓结型(p-n和M-S结)两极管的载流子寿命

本文报告了我们用阶跃恢复法测定砷化镓两极管载流子寿命的初步结果。首先,对硅阶跃两极管用反向恢复法和阶跃恢复法两种方法测寿命,经比较结果,数据相当符合。在此基础上提出了阶跃恢复法的测试条件,并认为这一方法测得的p-n结两极管寿命即少数载流子寿命。然后,用阶跃恢复法测定了砷化镓p-n结两极管的少数载流子寿命。我们也测定了砷化镓M-S结两极管的寿命,经过分析,认为它不是少数载流子寿命。 关键词：     

Recombination efficiency of single dislocations in GaP

We have calculated the recombination efficiency of a single dislocation as a function of its core radius and the minority carrier diffusion length. Comparison between theory and experiment shows that the dislocation core radius in GaP varies from <1Å in undoped samples to higher values in heavily doped and metal diffused samples.     

电子辐照下GaAs/Ge太阳电池载流子输运机理研究

通过地面模拟辐照试验获得不同能量电子辐照下GaAs/Ge太阳电池电学参数退化的基本规律, 在此基础上使用PC1 D模拟程序分析太阳电池内部的载流子输运机理, 建立不同能量的电子辐照下GaAs/Ge太阳电池中多数载流子浓度和少数载流子扩散长度随辐照粒子注量变化的基本规律. 研究结果表明: 多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小, 多数载流子去除率和少数载流子扩散长度损伤系数均随电子能量的增高而增大, 多数载流子去除效应和少数载流子扩散长度缩短分别是电池开路电压和短路电流退化的主要原因.     

Growth of Pure Zinc Blende GaAs Nanowires: Effect of Size and Density of Au Nanoparticles

Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs（111）B substrates via Au catalyzed vapor-liquid-solid mechanism. The diameter, size distribution, and density of Au particles can be changed by varying the Au film thickness. We find that the grown nanowires are of rod-like shapes and pure zinc blende structure; moreover, the growth rate depends on the density of Au particles and it is independent of its diameters. It can be concluded that the nanowire was grown with main contributions from the direct impingement of vapor species onto the Au-Ga droplets and contributions from adatom diffusion can be negligible. The results indicate that the droplet acts as a catalyst rather than an adatom collector.     

Determination of bulk and surface transport properties by photocurrent spectral measurements

Reliable minority carrier diffusion length and surface recombination velocity values have been obtained from stationary photocurrent measurements. A modified surface photovoltage method has been used to determine diffusion lengths longer than the wafer thickness in high-purity Si, whereas the spectral variation of the photocurrent has been employed to measure the surface recombination velocity. The novelty presented in this paper is that a Schottky diode has been employed in both the methods to collect generated charged carriers. Moreover the same Schottky diode has been employed in both the methods in order to avoid any a priori assumptions on the material transport parameters. This combined application of the two methods at the same device enables the determination of highly reliable results. Received: 17 February 2000 / Accepted: 28 March 2000 / Published online: 30 June 2000     

调制激光致硅晶圆载流子辐射扫描成像试验研究

建立了调制激光诱发硅晶圆少数载流子密度波一维模型, 仿真分析了少数载流子输运参数对调制激光诱发载流子辐射信号频域响应的影响. 利用调制激光诱发载流子辐射扫描成像系统对含有表面划痕的硅晶圆进行了扫描成像试验研究. 通过少数载流子密度波模型与多参数拟合方法反求得到了扫描区域的输运参数二维分布图. 该方法得到的少数载流子寿命与利用传统光电导方法测量的少数载流子寿命结果相符; 分析了划痕对载流子输运参数造成的影响, 与光电导方法比较, 该方法可以测量不同位置的全部载流子输运参数且分辨率高.     

Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a ⁶⁰Co source for doses up to 600?Gy. Temperature-dependent electron beam-induced current (EBIC) was employed to measure minority carrier transport properties. For low doses below ～250?Gy, the minority carrier diffusion length in AlGaN/GaN HEMTs is shown to increase by about 40%. This increase is likely due to longer minority carrier lifetime induced by internal Compton electron irradiation. An associated decrease in activation energy, extracted from temperature-dependent EBIC, was also found. The obtained increase in transconductance and decrease in gate leakage current indicate an improvement in performance of the devices after low doses of irradiation. For high doses of gamma-irradiation, above ～300?Gy, the performance of HEMTs showed a deterioration. The deterioration results from the onset of increased carrier scattering due to additional radiation-induced defects, as is translated in a decrease of minority carrier diffusion length.     

透射式GaAs光电阴极材料的MOCVD生长

用常压MOCVD装置,制备了透射式GaAs光电阴极材料。发射层P-型GaAs掺杂浓度到10¹⁸-10¹⁹cm^-3,少子扩散长度到4.02μm。AlGaAs层的Al组分含量到0.83,其吸收光谱长波限与设计值基本符合。利用此材料进行了阴极激活实验,制成了透射式GaAs光阴极。     

晶硅太阳电池中Fe-B对与少子寿命、陷阱浓度及内量子效率的相关性

以太阳电池级直拉单晶硅片为材料,利用瞬态微波反射光电导衰减仪研究了硅片分别经过单、双面扩散后Fe-B对与少子寿命τ、陷阱浓度及制备成电池的内量子效率（IQE）的相关性.对于单面扩散后的样品,Fe-B对浓度分布在较大程度上决定了少子寿命分布;对于双面扩散后的样品,Fe-B对浓度显著降低（在135×10¹¹ cm^-3左右）,已不及其他杂质和缺陷对少子寿命的影响.结合瞬态微波衰减信号和陷阱模型,对单、双面吸杂前后硅片的陷阱浓度进行数值计算,发现经过扩散 关键词： 少子寿命 陷阱浓度 内量子效率 Fe-B对     

Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy

A series of GaAs1-ySby epilayers are grown on GaAs substrates under antimony compositions of samples with beryllium doping are obtained different growth conditions. Different A non-equilibrium thermodynamics model is used to calibrate and fit the Sb composition. Activation energy of 0.37 eV for the dissociation process of Sb4 molecules is obtained. Carrier mobility and concentration of samples are influenced by the Sb composition. Quasi-qualitative analysis of mobility is used to explain the relations among Sb composition, carrier mobility and concentration. High resolution x-ray diffraction （HRXRD） rocking curves and Hall effects measurements are used to determine the crystal quality, carrier mobility and concentration.     

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

To understand the effects of ⁶⁰Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ～300?Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400?Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25?min resulted in partial recovery of transport properties and device performance.     

Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study

Indium oxide films are deposited by pulsed laser deposition in the presence of oxygen atmosphere, on different substrates, namely GaAs, Si, quartz, and glass. The structural, morphological, and interface characteristics are studied. Cubic In₂O₃ phase is confirmed by high resolution X-ray diffraction measurements. While the films on Si, glass, and quartz substrates are polycrystalline, the films on GaAs exhibit a preferred orientation along (2 2 2) plane. The structure and crystalline nature of the films are also confirmed by Raman spectroscopy. Furthermore, Raman spectra show the appearance of gallium oxide modes arising due to Ga diffusion from the substrate. The morphology of the films deposited on different substrates is studied by atomic force microscopy and rms roughness values are obtained. A two-dimensional power spectral density analysis has been used to calculate the growth exponent (α). A value of α > 1 (α < 1) for films grown on GaAs/Si (quartz/glass) substrates suggests that the growth on crystalline substrates is governed by the linear diffusion model, whereas the growth on amorphous substrates follows the dynamic scaling behaviour. UV-visible study shows a high optical transmittance of >90% and a band gap value of 3.64 and 3.79 eV for the films deposited on quartz and glass substrates, respectively.     

GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟

以GaInP/GaAs/Ge三结太阳电池为研究对象,开展了能量为0.7, 1, 3, 5, 10 MeV的质子辐照损伤模拟研究,建立了三结太阳电池结构模型和不同能量质子辐照模型,获得了不同质子辐照条件下的I-V曲线,光谱响应曲线,结合已有实验结果验证了本文模拟结果,分析了三结太阳电池短路电流、开路电压、最大功率、光谱响应随质子能量的变化规律,利用不同辐照条件下三结太阳电池最大输出功率退化结果,拟合得到了三结太阳电池最大输出功率随位移损伤剂量的退化曲线.研究结果表明,质子辐照会在三结太阳电池中引入位移损伤缺陷,使得少数载流子扩散长度退化幅度随质子能量的减小而增大,从而导致三结太阳电池相关电学参数的退化随质子能量的减小而增大.相同辐照条件下,中电池光谱响应退化幅度远大于顶电池光谱响应退化幅度,中电池抗辐照性能较差,同时中电池长波范围内光谱响应的退化幅度比短波范围更大,表明中电池相关电学参数的退化主要来源于基区损伤.     

Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality

We report on Raman scattering measurements of all Raman-active phonons in wurtzite and zinc blende structure GaN epilayers grown on GaAs (001), GaAs (111)A, and GaAs (111)B oriented substrates by means of molecular beam epitaxy (MBE). Raman spectra are taken from these epilayers at room temperature and 77 K in backscattering geometry. The measured values of the phonon frequencies are in agreement with other studies and with lattice dynamic calculations of phonon modes in GaN zinc blende and wurtzite structures. We show that crystal quality is much better in samples grown on GaAs (111) substrates than in samples grown on GaAs (001) substrates. The observation of disorder-activated modes gives information about sample quality. Comparison of the spectra from different thickness epilayers shows that the GaN is more highly disordered close to the substrate, particularly for the (001) substrates. Received 16 July 1999     

用电子计算机来分析p-AlxGa1-xAs/p-GaAs/n-GaAs太阳电池的性能

通过对p-AlxGa1-xAs/p-GaAs/n-GaAs太阳电池的少子扩散长度、结深、Al组分及其它光电参数的测量,初步确立了此电池的模型,以此模型用电子计算机计算了电池的量子效率谱等性能并与实验作了比较,进一步还分析了结深、扩散长度等参数对电池性能的影响.