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Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films |
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| Authors: | Siyoung Kim Mina Jung Aung Khaing Nyi Joonsuk Song Seunghwan Park |
| Institution: | a Department of Nano-Semiconductor, Korea Maritime University, Busan 606-791, Republic of Korea b Division of Mechatronics Engineering, Korea Maritime University, Busan 606-791, Republic of Korea c Faculty of Energy Resources Engineering, Jungwon University, Goesan 367-805, Republic of Korea d Neosemitech, Incheon 406-840, Republic of Korea e Department of Defense Science and Technology, Hoseo University, Asan 336-795, Republic of Korea f Center for Interdisciplinary Research, Tohoku University, Sendai 980-8577, Japan |
| Abstract: | We have investigated on the molecular beam epitaxy (MBE) of Te-doped GaSb films on ZnTe buffer. Te-doped GaSb (GaSb:Te) films with and without ZnTe buffer were grown on (0 0 1) GaAs substrates. GaSb:Te/ZnTe/GaAs film revealed higher mobility (=631 cm2/V s) in comparison to GaSb:Te/GaAs film (=249 cm2/V s). To explain the higher mobility of GaSb:Te on ZnTe buffer, dislocation density and temperature dependence of Hall measurement results were analyzed. Temperature dependence of Hall measurement shows strong influence of the dislocation scattering, which indicates that dislocation reduction by the ZnTe buffer enhances the carrier mobility of GaSb films. |
| Keywords: | 61 72 Tt 73 20 Mf 81 15 Hi |
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