Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.     

A density functional theory study of small bimetallic PdnAl (n=1–8) clusters

The geometries, stabilities, and magnetic properties of Pd_nAl (n=1–8) neutral clusters are studied using density functional theory with generalized gradient approximation. The growth pattern for different sized Pd_nAl (n=1–8) clusters is Al-substituted Pd_n+1 clusters and it keeps the similar framework of the most stable Pd_n+1 clusters except n=6 and 8. Al atoms in the ground state Pd_nAl isomers tend to occupy the most highly coordinated position. The analysis of stabilities shows that doping an Al atom can enhance the stabilities of the host Pd clusters and the magic number characteristic of Pd₄ cluster cannot be changed, the Pd₃Al cluster has a higher stability. Charges are transferred from Al atom to Pd atoms in all Pd_nAl clusters, so the Al atom is the electron donor, and Pd atoms are the electron accepters. Doping an Al atom decreases the average atomic magnetic moments of the host Pd clusters.     

A first-principles study of B2 NiAl alloyed with rare earth elements Pr,Pm,Sm,and Eu

The structural,elastic,and electronic properties of NiAl alloyed with rare earth elements Pr,Pm,Sm,and Eu are investigated by using density functional theory(DFT).The study suggests that Pr,Pm,Sm,and Eu all tend to be substituted for an Al site.Ni8Al7Pm possesses the largest ductility.Only the hardness and ductility of Ni8Al7Eu are enhanced simultaneously.The covalency strength of the Ni-Al bond in Ni8Al7Pm is higher than that in Ni8Al7Eu.The covalency strength of an Al-Al bond and that of a Ni-Ni bond in Ni8Al7Eu are higher than that in Ni8Al7Pm.The Ni-Pm bond and the Ni-Eu bond are covalent,and the covalency strength of the Ni-Pm bond is greater.The Al-Pm bond and the Al-Eu bond show great covalency strength and ionicity,respectively.     

高体分SiC_p/Al复合材料螺纹性能的测试

从SiCp/Al复合材料性能分析着手,讨论了预置件法、焊接法和粘接法等在空间遥感器研制中常用的联接方法的优缺点,提出了在高体积分数（体分）SiCp/Al复合材料上直接加工螺纹,并加装钢丝螺套的方法来改善螺纹联接性能。对在某高体分SiCp/Al复合材料上加工的M4、M5螺纹进行了拉伸测试,结果表明：加装钢丝螺套前,复合材料螺纹有被拉脱现象;加装钢丝螺套后,M4螺纹、螺杆在3 000～4 000 N被拉断;M5螺纹、螺杆在8 000～9 000 N被拉断,测试后两种规格的螺纹状态良好,可以满足实际应用对该材料拉伸强度的要求,其已应用于工程项目中。     

Pt_nAl(n=1—8)小团簇的密度泛函理论研究

采用密度泛函理论方法,在BPW91/LANL2DZ水平下详细研究了Pt n Al(n=1—8)团簇的几何结构、稳定性和电子性质.同时,分析了团簇的结构演化规律、平均结合能、二阶能量差分、能隙、磁性、Mulliken电荷和电极化率.结果表明:除Pt2Al外,所有Pt n Al(n=1—8)团簇的基态几何结构都可以用Al原子替换Pt n+1基态构型中的Pt原子得到,且Al原子位于较高的配位点上.二阶能量差分、能隙的分析结果表明,PtAl和Pt4Al团簇相对其他团簇具有较高的稳定性.Mulliken电荷分析表明,Al原子所带的电荷转移到Pt原子上,Al原子是电荷的捐赠者.磁性的分析说明,单个Al原子的加入对Pt n团簇的平均每原子磁矩随尺寸的变化趋势没有影响,但总体上降低了Pt n团簇的平均磁矩.极化率的研究表明,富Pt团簇的非线形光学效应强,容易被外场极化.     

深过冷液态Al-Ni合金中枝晶与共晶生长机理

在自由落体条件下实现了液态Al-4 wt.%Ni亚共晶、Al-5.69 wt.%Ni共晶和Al-8 wt.%Ni过共晶合金的深过冷与快速凝固. 计算表明, (Al+Al₃Ni)规则纤维状共晶的共生区是4.8–15 wt.%Ni成分范围内不闭合区域, 且强烈偏向Al₃Ni相一侧. 实验发现, 随液滴直径的减小, 合金熔体冷却速率和过冷度增大, (Al)和Al₃Ni相枝晶与其共晶的竞争生长引发了Al-Ni 共晶型合金微观组织演化. 在快速凝固过程中, Al-4 wt.%Ni亚共晶合金发生完全溶质截留效应, 从而形成亚稳单相固溶体. 当过冷度超过58K时, Al-5.69 wt.%Ni 共晶合金呈现从纤维状共晶向初生(Al) 枝晶为主的亚共晶组织演变. 若过冷度连续增大, Al-8 wt.%Ni过共晶合金可以形成全部纤维状共晶组织, 并且最终演变为粒状共晶.     

ConAl (n= 1–8)合金团簇结构和磁性质研究

采用密度泛函理论中的广义梯度近似(DFT-GGA)对Co_nAl (n= 1–8)合金团簇进行了系统的几何、 电子结构和磁性质研究. 研究结果表明Al原子倾向于与Co原子形成最大的成键数, 即Al原子均处在团簇原子拥有最大配位数的位置上. Al掺杂后Co_nAl团簇的稳定性减弱, 磁性降低. 磁性降低的幅度与实验上对较大Co_nAl_M团簇的磁性检测结果获得了很好地符合. 在所有Co_nAl团簇的最稳定结构中, 除Co₄Al外, Al与近邻Co原子均呈现反铁磁性耦合. 相对于纯Co团簇,非磁性Al元素的掺入以及Al掺杂后Co原子整体自旋极化的减弱 是导致Co_nAl团簇磁性的降低主要原因. 关键词： nAl合金团簇')" href="#">Co_nAl合金团簇 几何结构 磁性 自旋极化     

Energy distribution in white organic light-emitting diodes with three primary color emitting layers

Two types of organic light-emitting diodes with structures of ITO/N,N'-bis(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB)/tris(8-hydroquinolinato)aluminum(Alq 3)/2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline(BCP)/Alq 3:4-dicyanomethylene-2-(tert-butyl)-6-methyl-4H-pyran(DCJTB)/Alq 3 /Al and ITO/NPB/BCP/Alq 3 /Alq 3:DCJTB/Alq 3 /Al were studied.NPB was chosen as a hole-transporting/blue-emitting layer.Alq 3 adjacent to BCP acted as a green emitting layer while that adjacent to the Al cathode acte...     

27Al and 23Na double-rotation NMR of sodalites.

The 27Al NMR spectra of calcium tungstate aluminate sodalite (CAW), Ca8[Al12O24](WO4)2, and the 23Na NMR spectra of sodium aluminosilicate sodalites of general composition Na9[Si6Al6O24]A2 with A = B(OH)4- (SBS), SCN- (SRS) and A2 = SO4(2-) (SSS), MoO4(2-) (SMS) have been measured using magic-angle spinning (MAS) and double-rotation (DOR) techniques. Rotor synchronized pulse excitation is applied in the DOR experiments. Dramatic line narrowing is observed in the DOR spectra of all samples. The 27Al DOR NMR spectra of CAW measured at 9.4 and 11.7 T and spinning rates of 800-1150 Hz of the outer and 5 kHz of the inner rotor show seven sharp central lines accompanied by a manifold of spinning sidebands. These lines correspond to the seven crystallographically inequivalent Al sites of the CAW framework derived from X-ray structure analysis. From the difference of the line positions in the 9.4 and 11.7 T spectra the quadrupole coupling constant, QCC, quadrupole induced shift, sigma qs, and isotropic chemical shift, delta cs, of each Al site have been calculated. QCC values in the range of 5 to 9 MHz are obtained which reflect the strong tetragonal distortion of the AlO4 tetrahedra in CAW. delta cs shows only small changes in the range between 74.4 and 77.2 ppm. A tentative assignment of all lines to the distinct Al sites is derived from the correlation between QCC and a "shear strain parameter" describing quantitatively the distortion of the AlO4 tetrahedra.(ABSTRACT TRUNCATED AT 250 WORDS)     

Structures, chemical bonding, magnetisms of small Al-doped zirconium clusters

The geometrical and electronic properties of small Al-doped Zrn−1 and host Zrn clusters (n=2-8) are investigated with hybrid HF/DFT functional: B3LYP. For the most favorable configurations of Zrn−1Al clusters, the Al atom prefers to be located on the surface of host zirconium clusters. The isomers that correspond to low coordination number of Zr-Al bonds are found to be more stable. The doping of Al atom in Zrn−1 clusters improves the chemical activities of host clusters. The Zr₅, Zr₇, Zr₄Al and Zr₆Al clusters behave the stronger stabilities relative to their respective neighbors. The strong s-d hybridizations are presented in all bonding Zr atoms. The values of WBI together with AIM analysis suggest that the Zr-Zr interactions are stronger than those between Zr and Al atoms. The doping of Al atom results into the decrease of spin magnetic moments for host zirconium clusters. The moments are mainly derived from the 4d electrons of bonding Zr atoms.     

The ab initio calculations of the doping Zr's influence on the electronic structure of AlCo2Ti

The electronic structures of the ternary (Hume-Rothery) L2₁-phase compound AlCo₂Ti are calculated by first-principles using full potential linearized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). The ab initio results are analyzed with a simplified model for Al-based compounds containing transition metal (TM) atoms. The results show that the total DOS depends strongly on the positions of TM atoms, and the TM d DOS plays a crucial role in hybridization with other element valence electrons. However, the Al 3s states are repelled far away from the Fermi energy in studied sample, and the Al 3d states are far more extended-like in the character than the d states. Furthermore, the total DOS_s are modulated by Al 3p states and the Al 3p states are more sensitive than d states to change in the electronic interactions. Then, the Al 3p is also important for the ternary stability of the intermetallic compound. The Co-Ti interaction becomes stronger by the doping element Zr in the Al₄Co₈Ti₃Zr structure. Especially, the doping Al₄Co₈Ti₃Zr alloy has a larger value DOS at the Fermi level and makes the total DOS gap smaller than the AlCo₂Ti.     

Electronic structures of Al–Si clusters and the magic number structure Al8Si4

The low-energy structures of Al₈Si_m (m = 1–6) have been determined by using the genetic algorithm combined with density functional theory and the Second-order Moller-Plesset perturbation theory (MP2) models. The results show that the close-packed structures are preferable in energy for Al–Si clusters and in most cases there exist a few isomers with close energies. The valence molecular orbitals, the orbital level structures and the electron localisation function (ELF) consistently demonstrate that the electronic structures of Al–Si clusters can be described by the jellium model. Al₈Si₄ corresponds to a magic number structure with pronounced stability and large energy gap; the 40 valence electrons form closed 1S²1P⁶1D¹⁰2S²1F¹⁴2P⁶ shells. The ELF attractors also suggest weak covalent Si–Si, Si–Al and Al–Al bonding, and doping Si in aluminium clusters promotes the covalent interaction between Al atoms.     

F8BT薄膜表面形貌及与Al形成界面的电子结构和反应

基于共轭聚合物光电器件的性能与聚合物的表面形貌、分子取向、以及与金属电极形成的界面结构密切相关. 本文利用原子力显微镜(AFM)、同步辐射光电子能谱(SRPES)和近边X射线吸收精细结构谱(NEXAFS)等, 研究了聚(9, 9-二辛基芴并苯噻二唑)(F8BT)薄膜的表面形貌、分子取向及其与Al 电极形成界面过程的结构变化. 结果表明, 在略低于F8BT玻璃转变温度(T_g=130 ℃)条件下对F8BT薄膜进行退火, 可明显增加薄膜的表面粗糙度, 薄膜中F8BT 的分子取向角约为49°, 9, 9-二辛基芴单元(F8)与苯噻唑单元(BT)几乎在同一平面. 在Al/F8BT 界面形成过程中, Al与F8BT中的C, N和S均发生不同程度的化学反应, 并导致价带结构和未占据分子轨道(LUMO)态密度的变化. Al对F8BT进行n型掺杂引起F8BT能带弯曲的同时, 未占据能级被部分占据, 更多的电子将被注入到LUMO+1中. 通过考察价带电子结构、芯能级位移及二次截止边的变化, 绘制了清晰的Al/F8BT界面能级图.     

Temperature and reconstruction dependence of the initial Al growth on GaAs(001)

The development of the interface between Al and MBE-grown GaAs(001) surfaces has been analyzed up to a mean Al coverage of 0.5 nm. Interdiffusion, chemical reactivity and nucleation have been studied by Auger electron spectroscopy and reflection high energy electron diffraction for the c(2 × 8) and the (4 × 6) surface reconstructions in the temperature interval 268 to 673 K. Above 550 K no nucleation was observed and the growth process was governed by As outdiffusion followed by formation of AlAs. At lower temperatures three characteristic regions of Al coverage were found. The different growth mechanisms in these regions are discussed. An AlGa exchange reaction was observed only on the Ga-rich (4 × 6) structure where it was also correlated to the nucleation. The particular deposition measurement procedure used was found to be an important parameter, since interdiffusion was observed even at room temperature. The coverage at which 3D nucleation occurred was dependent on both substrate temperature and surface reconstruction but always appeared between 1.5 and 3.5 monolayer coverage. A strong temperature dependence of the nucleation was observed.     

Density functional study of Al-doped Au clusters

The equilibrium geometries and electronic properties of Au_nAl, up to n=13, have been systematically investigated using the density functional theory. The results show that, for the Au_nAl clusters, two patterns are identified. Pattern one (n=2, 3, 8), the lowest-energy geometries prefer two-dimensional structures. Pattern two (n=4-7, 9--13), the lowest-energy geometries prefer three-dimensional structures. According to the analysis of the binding energy and the fragmentation energy, Au_nAl clusters with odd n are found to be more stable than those with even n. The same trend of alternation can be illuminated according to the computational results in the HOMO--LUMO gap, the ionization potential, and the electron affinities. The Al atom not only changes the structures of pure gold clusters, but also enhances their stabilities. NBO analysis indicates 6s orbital of Au atom hybridizes with 3p orbital of Al atom.     

Bond cutting in Cs‐doped tris(8‐hydroxyquinoline) aluminium

A series of Cs 4d and Al 2p spectra associated with valence‐band and cut‐off spectra have been used to characterize the interaction between caesium and tris(8‐hydroxyquinoline) aluminium (Alq₃) molecules in a Cs‐doped Alq₃ layer. The Cs 4d and Al 2p spectra were tuned to be very surface sensitive by selecting a photon energy of 120 eV at the National Synchrotron Radiation Research Center, Taiwan. A critical Cs concentration exists, above which a new Al 2p signal appears next to the Al 2p peak of Alq₃ in the lower binding‐energy side. The Al 2p signal was analyzed and assigned as being contributed from a mixture of Alq₂, Alq and Al. Experimental data supported the observation that bond cutting of Alq₃ by the doped Cs atoms occurred at high Cs doping concentration.     

气压对激光烧蚀Al等离子体中粒子速度的影响

在背景气压为8× 10-3— 100Pa范围内 ,通过测量脉冲激光烧蚀平面Al靶产生的等离子体辐射谱的时间分辨特征 ,比较空间不同点辐射的飞行时间轮廓的相对延迟 ,从而得到辐射粒子速度及其空间分布 .利用绝热膨胀的理论和激波模型分别对背景气压小于 0 .6Pa的结果和 5Pa时的结果作了分析 ,并得出激波的波面基本上为柱对称. With the ambient gas pressure in the range from 8×10 -3 to 10 2 Pa, Q-switched YAG laser ablates plane aluminum target and plasma are produced. Optical emission spectroscopy is used to carry out time-resolved analysis of atomic particles. Using the resonance transition of Al I 396.1 nm (3p 2P-4s 2S), the spatiol velocity distribution of Al I has been obtained under the laser energies of 160 mJ/pulse when the ablating size is about 200 μm. The velocity is at the order of 10 6 cm/s...     

A型沸石中Lwenstein规则的能学研究

通过模拟退火方法,使用协合分子力学场对Ｓｉ,Ａｌ分布分别为４：０序列,两种３：１序和随机分布的ＮａＡ型沸石结构进行了能量最小化计算,获得了不同结构的位能及其生成热大小,计算结果表明,４：０序结构的位能和生成热在所讨论的几种序结构中最低,从而在理论上证实了Ｌｏｅｗｅｎｓｔｅｉｎ规则是分子筛结构中能量最小化的自然结果。     

A comparative first-principles study on electronic structures and mechanical properties of ternary intermetallic compounds Al8Cr4Y and Al8Cu4Y: Pressure and tension effects

An investigation into the bulk properties, elastic properties and Debye temperature under pressure, and deformation mode under tension of Al₈Cu₄Y and Al₈Cr₄Y compounds was investigated by using first principles calculations based on density functional theory. The calculated lattice constants for the ternary compounds (Al₈Cu₄Y and Al₈Cr₄Y) are in good agreement with the experimental data. It can be seen from interatomic distances that the bonding between Al1 atom and Cr, Y, and Al2 atoms in Al₈Cr₄Y are stronger than Al₈Cu₄Y. The results of cohesive energy show that Al₈Cr₄Y should be easier to be formed and much stronger chemical bonds than Al₈Cu₄Y. The bulk modulus B, shear modulus G, Young's modulus E and Poisson's ratio ν can be obtained by using the Voigt–Reuss–Hill averaging scheme. From the results of elastic properties, Al₈Cr₄Y has the stronger mechanical behavior than Al₈Cu₄Y. Our calculations also show that pressure has a greater effect on mechanical behavior for both compounds. The ideal tensile strength are obtained by stress-strain relationships under [001](001) uniaxial tensile deformation, which are 15.4 and 23.4 GPa for Al₈Cu₄Y and Al₈Cr₄Y, respectively. The total and partial density of states and electron charge density under uniaxial tensile deformations for Al₈Cu₄Y and Al₈Cr₄Y compounds are also calculated and discussed in this work.     

高电荷态Krq+与Al表面碰撞发射可见光的研究

利用低速(V≈0.01 V_Bohr)高电荷态Kr^q+ (q=8, 10, 13, 15, 17)离子轰击金属Al表面, 获得了碰撞过程产生的300–600 nm的光谱. 实验结果表明: 低能大流强(μA/cm²量级)离子束入射金属表面, 可产生溅射原子、离子和入射离子中性化后发射的可见光. 随着入射离子势能(电荷态)增加, 碰撞过程中发射谱线的强度增强. 与激发态3d能级相比, 较高的势能可以有效地激发Al原子的电子到较高4s能级. 关键词： 高电荷态离子 可见光发射 离子与表面作用