Semiconductor–metal transition in GaAs nanowires under high pressure

We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature.The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa.In the same pressure range, pressureinduced metallization of GaAs nanowires was confirmed by infrared reflectance spectra.The metallization originates from the zinc-blende to orthorhombic phase transition.Decompression results demonstrated that the phase transition from zincblende to orthorhombic and the pressure-induced metallization are reversible.Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.     

基于薄膜电极溶胶修饰的染料敏化太阳电池光电特性研究

染料敏化太阳电池(DSC)中的纳米薄膜电极 是决定太阳电池光电转换性能的重要组成部分. 为改善薄膜电极特性, 采用了不同浓度的TiO₂溶胶对DSC光阳极导电玻 璃和纳米TiO₂多孔薄膜进行不同方式的界面处理. 利用X射线衍射方法对制备得到的多孔薄膜以及溶胶经高温处理 后致密层中纳米TiO₂颗粒的尺寸及晶型进行了测试. 采用高分辨透射电子显微镜和场发射扫描电子 显微镜观察了纳米颗粒及薄膜微结构形貌. 采用强度调制光电流谱/光电压谱分析了TiO₂溶 胶的不同处理方式对电子传输和复合的影响. 在100 mW· cm^-2光强以及暗环境下分别测试了DSC的伏安输出性能以及暗电流. 结果表明, 不同浓度和处理方式均能较好地抑制暗电流. 溶胶处理后光生电子寿命τ_n延长, 电子传输平均时间τ_d相应缩短. 采用浓度为0.10 mol·L^-1的 溶胶对导电玻璃和多孔膜同时处理, DSC的宏观输出特性最佳, 短路电流密度J_sc提高了10.9%, 光电转换效率η提高了11.9%.     

原子层沉积方法制备核-壳型纳米材料研究

采用原子层沉积方法在碳黑纳米颗粒表面分别沉积Al₂O₃, ZnO, TiO₂和Pt, 成功制备出核-壳型纳米材料. 通过高分辨率透射电子显微镜、X射线光电子能谱仪、 能谱仪对材料的表面形貌、晶体结构、薄膜成分进行了表征和分析. 结果表明, 原子层沉积方法是制备核壳型纳米材料的理想方法. 此外, 还分析了采用原子层沉积方法沉积不同材料, 所生长的薄膜材料有单晶、多晶、非晶等多种存在形式的形成原因. 关键词： 原子层沉积 核-壳型纳米材料 碳黑纳米颗粒     

Lithium ion batteries cathode material: V2O5

Among all the known electrode materials, vanadium pentoxide (V₂O₅) has high reversible capacity. It is a very valuable material for research of the complexity, rich structure and morphology. However, it also has some disadvantages, such as poor cycle stability, low discharge voltage, low conductivity and Li⁺ diffusion coefficient. In this regard, researchers have carried out a lot of research, such as using various methods to improve the nanostructures, introducing heterostructures, introducing point defects or cation doping in the crystal structure, etc. The electrochemical performance of V₂O₅ has been significantly improved in reversible capacity, high-rate capacity and long-term cycle stability. In this paper, V₂O₅ based nanostructure with different chemical composition are briefly introduced, and it covers V₂O₅ nanomaterials with different morphology, including 1D nanorods, nanobelts, nanotubes, 2D leaf like nanosheets and other nanosheets, and 3D hollow structures, porous nanostructures, porous eggshell microsphere structures. The composite nanomaterials of V₂O₅ and different carbonaceous supports are also introduced. Finally, the V₂O₅ composite materials doped with cations are discussed. The electrochemical performance of V₂O₅ based electrode can be improved effectively by obtaining appropriate nanostructure and optimized chemical composition.     

Pressure-induced phase transition in transition metal trifluorides

As a fundamental thermodynamic variable, pressure can alter the bonding patterns and drive phase transitions leading to the creation of new high-pressure phases with exotic properties that are inaccessible at ambient pressure. Using the swarm intelligence structural prediction method, the phase transition of TiF₃, from R—3c to the Pnma phase, was predicted at high pressure, accompanied by the destruction of TiF₆ octahedra and formation of TiF₈ square antiprismatic units. The Pnma phase of TiF₃, formed using the laser-heated diamond-anvil-cell technique was confirmed via high-pressure x-ray diffraction experiments. Furthermore, the in situ electrical measurements indicate that the newly found Pnma phase has a semiconducting character, which is also consistent with the electronic band structure calculations. Finally, it was shown that this pressure-induced phase transition is a general phenomenon in ScF₃, VF₃, CrF₃, and MnF₃, offering valuable insights into the high-pressure phases of transition metal trifluorides.     

离子液体在大气压等离子体中稳定性研究

采用发射光谱、紫外可见吸收光谱、红外吸收光谱和核磁共振技术分析1-丁基-3-甲基咪唑硫酸氢盐（[Bmim]HSO₄）, 1-丁基吡啶硫酸氢盐（HSO₄）和1-丁基-3-甲基咪唑四氟化硼（[Bmim]BF₄）三种离子液体在大气压介质阻挡放电氩等离子体体系中的稳定性,并分别以上述三种离子液体为辅助液采用大气压介质阻挡放电等离子体技术制备TiO₂,进一步研究三种离子液体在等离子体中的稳定性对所制备的TiO₂晶相结构的影响。结果表明：向大气压介质阻挡放电氩等离子体中分别引入[Bmim]HSO₄,HSO₄和[Bmim]BF₄离子液体后并未改变氩等离子体放电光谱谱峰的位置和数量且没有新的谱峰生成,但谱峰强度都明显降低,说明上述三种离子液体没有在等离子体区蒸发形成激发态物种;[Bmim]HSO₄和HSO₄放电前后的红外吸收光谱基本一致,表明离子液体在放电后的化学键未发生改变;[Bmim]HSO₄和HSO₄的紫外可见吸收光谱显示其吸收峰的位置和强度未发生改变,说明两种离子液体在等离子体作用后的结构是稳定的;[Bmim]BF₄放电前后的红外吸收光谱各个特征峰并无明显差异,但其紫外可见吸收光谱图谱吸收峰的位置却发生较大的偏移,进一步对放电前后的[Bmim]BF₄离子液体进行核磁共振分析,两者的1H NMR峰数相同,但放电后的离子液体化学位移向高位偏移大约0.2单位,说明其化学环境发生了变化,表明有部分[Bmim]BF₄结构发生改变。光谱和核磁共振技术分析表明离子液体[Bmim]BF₄在等离子体作用后结构发生了改变。采用三种离子液体辅助大气压介质阻挡放电等离子体技术制备TiO₂样品的X-射线衍射分析结果表明 [Bmim]HSO₄和HSO₄辅助制备的HSO₄-TiO₂和[Bmim]HSO₄-TiO₂,谱图与锐钛矿相TiO₂标准谱图基本一致,表明所制备的TiO₂为纯锐钛矿型。而[Bmim]BF₄辅助制备的[Bmim]BF₄-TiO₂在2θ=24.1°处的衍射峰向小角度偏移,2θ=48°处的衍射峰向大角度偏移,说明[Bmim]BF₄在辅助制备TiO₂过程中,F进入TiO₂的晶格,破坏了TiO₂原子间的平衡状态,生成了F掺杂TiO₂光催化材料。F掺杂TiO₂光催化材料的形成也间接证明了离子液体[Bmim]BF₄在大气压等离子体中的不稳定性,此结果与核磁共振及紫外可见光的检测结果相一致。同时说明离子液体在等离子体的作用下对于纯锐钛矿晶格的形成和促进高活性掺杂型的光催化材料具有重要作用。为等离子体辅助离子液体制备高性能纳米材料提供重要的实验和理论依据。     

太赫兹波段介质微腔光学特性研究

采用匀胶法制备了厚度在微米量级的 Si/[TiO₂/Al₂O₃]²TiO₂和Si/[TiO₂/MgO]²/TiO₂ 多层介质膜反射镜. 采用太赫兹(THz)时域透射光谱系统获得了多层膜的时域透射谱. 用传输矩阵法模拟了Si/[TiO₂/Al₂O₃]²TiO₂ 和Si/[TiO₂/MgO]²/TiO₂两种分布式布拉格反射镜 (DBR)的反射相移和相位穿透深度等光学特性. 设计了两种结构为 DBR/LT-GaAs/DBR的对称THz光学微腔结构并模拟了腔结构的辐射光谱. 结果表明:通过引入谐振腔, 两种DBR组成的微腔器件在谐振波长处的强度分别提高了19和14倍. 其中Si/[TiO₂/Al₂O₃]²TiO₂/LT-GaAs (12 μm)/ [TiO₂/Al₂O₃]²TiO₂腔的辐射光谱存在两个峰, 分别位于208和248 μm, 并分析了出现两个谐振峰的原因. 探讨了通过引入介质谐振腔实现对THz源的辐射特性进行调控的可行性. 关键词： 分布式布拉格反射镜 光子晶体 穿透深度 太赫兹微腔     

FTIR与XRD的均匀粒度分布Ce-Cu/TiO2空心微球制备机理研究

随着社会经济的发展,环境空气品质已经成为研究热点。TiO₂是一种化学稳定性高,耐腐蚀性强,对人体无毒无害的N型半导体材料。利用TiO₂的光催化性能提高室内环境空气品质已经成为研究焦点,但是由于TiO₂只能在紫外光源下才具有较高的光催化效率,而在可见光源下的光催化效率较低,从而极大的限制了TiO₂在室内环境领域的发展。因此,研发在可见光源下具有良好光催化性能的TiO₂复合材料势在必行。利用元素掺杂改性技术与提高比表面积方法可以改善光催化反应过程中量子效率和对光能的利用率,以加快电子和空穴向表面迁移的速率同时降低光生载流子的复合机率。以二氧化硅SiO₂为模板、聚乙烯吡咯烷酮为成膜剂、硝酸铈Ce(NO₃)₃·6H₂O和硝酸铜Cu(NO₃)₂·3H₂O为改性剂采用溶胶-凝胶法制备均匀粒度分布的Ce-Cu/TiO₂空心微球,并将制备过程分为四个阶段,即纳米SiO₂球模板的制备、Ce-Cu/TiO₂-SiO₂复合微球凝胶的制备、Ce-Cu/TiO₂-SiO₂复合微球的制备和Ce-Cu/TiO₂空心微球的制备。利用傅里叶变换红外光谱仪（FTIR）与X射线衍射仪（XRD）对Ce-Cu/TiO₂空心微球的制备过程各阶段生成物进行测试与分析,即在纳米SiO₂球模板的制备阶段从微观角度研究纳米SiO₂球模板的搭建过程,在Ce-Cu/TiO₂-SiO₂复合微球凝胶的制备阶段研究TiO₂附着于纳米SiO₂球模板的过程,在Ce-Cu/TiO₂-SiO₂复合微球的制备阶段研究煅烧工艺对Ce-Cu/TiO₂-SiO₂复合微球中晶相与结构的影响,在Ce-Cu/TiO₂空心微球的制备阶段研究氢氧化钠溶液对Ce-Cu/TiO₂-SiO₂复合微球中纳米SiO₂球模板洗涤效果的影响。利用紫外-可见分光光度计（UV-Vis）对Ce-Cu/TiO₂空心微球的光响应性能进行测试与分析,以研究Ce-Cu/TiO₂空心微球对可见光源的利用效率。利用激光粒度分析仪（LPSA）与扫描电子显微镜（SEM）对Ce-Cu/TiO₂空心微球的粒度分布与微观形貌进行测试与分析,以研究Ce-Cu/TiO₂空心微球的均匀粒度分布效果。结果表明：以Si-O-Si基团构建非晶体结构的无定形态纳米SiO₂球模板,有利于聚乙烯吡咯烷酮在纳米SiO₂球模板表面附着,从而控制Ce-Cu/TiO₂空心微球的空腔结构。Ce-Cu掺杂基本进入TiO₂晶体,极少进入纳米SiO₂球模板晶体,从而抑制了Ce-Cu/TiO₂-SiO₂复合微球中TiO₂由锐钛矿相向金红石相的转变。Ce-Cu掺杂TiO₂可以促使TiO₂内部形成新的能级,实现能量较小的光子捕获e-和h+,从而提高Ce-Cu/TiO₂空心微球对可见光源的利用效率。Ce-Cu/TiO₂空心微球的表面光滑且不存在明显的缺陷,其形貌呈现良好的球体且粒径分布均匀,即d₉₀为219.54 nm,d₅₀为151.60 nm、d₁₀为103.84 nm,以及d₉₀-d₁₀为115.70 nm。研究结果为进一步获得可见光源下具有良好光催化性能的均匀粒度分布Ce-Cu/TiO₂空心微球提供理论依据和研究基础。     

羧酸型聚芴/二氧化钛杂化材料的制备及其荧光猝灭行为

通过Suzuki偶合反应合成了聚[9,9-二辛基芴-9,9-双(丙酸基)芴](PF8COOH),并采用溶胶-凝胶法制备了羧酸型聚芴/二氧化钛(TiO₂)杂化材料。通过核磁共振氢谱(¹H NMR)、凝胶渗透色谱(GPC)、紫外-可见吸收光谱(UV-Vis)、X射线衍射(XRD)和荧光发射光谱对聚合物及其杂化材料进行了表征,并研究了杂化材料的荧光猝灭行为。结果表明,所合成的PF8COOH数均分子量为19 600,PF8COOH的紫外-可见吸收和荧光发射光谱较聚(9,9-二辛基芴)(PF8)均发生红移。通过溶胶-凝胶法制得了PF8COOH/TiO₂杂化材料,其中TiO₂主要为金红石型。杂化材料出现明显的荧光猝灭现象,TiO₂含量越大则杂化材料的荧光猝灭现象越明显。羧基的引入可使聚芴与TiO₂之间的相互作用增强,电子更容易从聚芴向TiO₂转移,因而PF8COOH/TiO₂杂化材料的荧光猝灭现象比PF8/TiO₂杂化材料更明显。     

混合物理化学气相沉积法制备MgB$lt;sub$gt;2$lt;/sub$gt;单晶纳米晶片的研究

利用混合物理化学气相沉积法在石墨衬底上制备出了晶形为六角结构、厚度不同、径向尺寸不一的MgB₂单晶纳米晶片. 利用纳米定向转移技术将此晶片转移到了碳支持膜铜网上, 以便对其精细结构等物性进行表征. 电输运测量和磁性测量结果都表明晶片具有超导电性: T_conset=38 K, T_c(0)=33 K. 扫描电子显微镜图像表明, 晶片表面平整、厚度分布在几个纳米到200 nm之间, 宽度从几微米到上百微米; 高分辨透射电镜图像显示出晶片具有周期性晶格条纹. 选区电子衍射数据与MgB₂已有的单晶衍射数据相符. 这些测量结果证实了其确为高质量单晶MgB₂超导纳米晶片. 本文不仅提出了一种全新的制备单晶MgB₂的方法, 也观察到了纳米尺度MgB₂单晶的零电阻现象, 为后续的磁通钉扎、纳米力学性能等领域的深入研究提供了合适的素材. 关键词： 2')" href="#">单晶MgB₂ 超导纳米晶片 零电阻 混合物理化学气相沉积法     

Sonochemical and visible light induced photochemical and sonophotochemical degradation of dyes catalyzed by recoverable vanadium-containing polyphosphomolybdate immobilized on TiO2 nanoparticles

Na₅PV₂Mo₁₀O₄₀ supported on nanoporous anatase TiO₂ particles, TiO₂–PVMo, was used as an efficient photocatalyst for photocatalytic degradation of different dyes by visible light using oxygen as oxidant. This catalyst showed a good catalytic activity in the sonocatalytic and sonophotocatalytic decomposition of different dyes in aqueous solutions. The TiO₂–PVMo composite showed higher photocatalytic and sonocatalytic activity than pure polyoxometalate or pure TiO₂.     

压力下碱金属铁硒基超导体中的现象与物理

在凝聚态物理研究中, 压力作为对物质状态调控的独立变量得到了广泛的应用. 压力对发现物质的新现象、新规律及对其形成机理的理解和对相关理论的验证起到了重要的作用, 尤其在超导电性的研究中取得了巨大的成功. 文章简要的介绍了通过利用压力手段对具有相分离结构的碱金属铁硒基超导体A_xFe_2-ySe₂ (A=K, Rb, Tl/Rb)开展的系列研究所取得的实验结果, 以及其他一些文献中报道的在此方面的主要实验与理论研究工作, 包括压力导致的超导再进入现象和其产生的量子临界机理、其特有的反铁磁绝缘体相在该类超导体实现超导电性中的作用、化学负压力对超导电性的影响、构成该类超导体的反铁磁序与其寄居的超晶格的关系等.     

(Cu,N)共掺杂TiO2/MoS2异质结的电子和光学性能:杂化泛函HSE06

在密度泛函理论的基础上,系统地研究了Cu/N（共）掺杂的TiO₂/MoS₂异质结体系的几何结构、电子结构和光学性质.计算发现,TiO₂/MoS₂异质结的带隙相比于纯的TiO₂（101）表面明显变小,Cu/N（共）掺杂TiO₂/MoS₂异质结体系的禁带宽度也明显地减小,这导致光子激发能量的降低和光吸收能力的提高.通过计算Cu/N（共）掺杂TiO₂/MoS₂的差分电荷密度,发现光生电子与空穴积累在掺杂后的TiO₂（101）表面和单层MoS₂之间,这表明掺杂杂质体系可以有效地抑制光生电子-空穴对的复合.此外,我们计算了在不同压力下TiO₂/MoS₂异质结的几何、电子和光学性质,发现适当增加压力可以有效提高异质结的光吸收性能.本文结果表明,Cu/N（共）掺杂TiO₂/MoS₂异质结和对TiO₂/MoS₂异质结加压都能有效地提高材料的光学性能.     

纳米La2(MoO4)3∶Eu/Fe3O4磁性荧光粉末的制备及用于指纹显现的研究

采用水热法和共沉淀法分别合成了纳米La₂(MoO₄)₃∶Eu荧光材料和纳米Fe₃O₄磁性材料,并利用透射电子显微镜、X射线衍射仪、荧光光谱仪表征纳米材料的形貌尺寸、晶体结构、荧光性能。经表征,纳米La₂(MoO₄)₃∶Eu荧光材料的微观形貌为片状结构,晶体结构为四方晶型,其发射光谱中出现了Eu3+的特征发射峰;纳米Fe₃O₄磁性材料的微观形貌为球形颗粒,晶体结构为立方晶型,并具有超顺磁性。然后,将以上两种纳米材料以一定比例混合均匀,制备了具有超顺磁性的La₂(MoO₄)₃∶Eu/Fe₃O₄纳米荧光粉末。经表征,该磁性纳米荧光粉末的微观形貌为片状结构与球形颗粒的混合,其发射峰位置未发生变化,而发光强度有所降低,但仍能够满足指纹显现的需要。最后,将制备的纳米磁性荧光粉末用于显现不同类型客体表面的潜在指纹。显现效果表明,对于光滑客体表面的指纹,使用磁性纳米荧光粉末与纳米荧光粉末的显现效果无明显差异;对于粗糙客体表面的指纹,使用磁性纳米荧光粉末能够清晰显现出指纹的细节特征,其显现效果明显优于普通纳米荧光粉末,并能够有效避免粉末扬尘现象。本研究制备的纳米磁性荧光粉末是一种理想的指纹显现材料,其指纹显现具有背景干扰低、显现效果好、适用范围广、无粉末扬尘等优点,在刑事案件现场具有广阔的应用前景。     

Na2TiGeO5: Crystal structure stability at low temperature and high pressure

The temperature evolution of the lattice parameters measured from 295 to 125 K exhibits a small instability below T_c≈278 K, indicating ferroelastic properties of Na₂TiGeO₅. The behavior is related to the specific crystal structure built of polyhedral layers with shared TiO₅ pyramids and GeO₄ tetrahedra, alternating with layers of Na⁺ cations. Antiparallel alignment of the short apical titanyl bond in adjacent rows of the polyhedral layer gives rise to spontaneous strain, when a distortion of the TiO₅ groups occurs. Single-crystal structures determined at room temperature and 120 K suggest that {1 1 0} domains, developing below T_c, entail a tetragonal-to-orthorhombic symmetry change. The mechanism is attributed to a shortening of the O–O distance between the polyhedral layers, and to minor shifts of the positions of the Ti atoms and the correlated oxygen atoms along the c-axis. The structure distortion, however, is too small to allow any unambiguous determination of the symmetry-breaking effects. The bulk modulus and its pressure derivative have been determined as B₀=89(2) GPa and . A pressure-induced phase transformation takes place at P_c≈12.5 GPa, presumably to an orthorhombic structure. The pressure effect on the transition temperature is given by ΔT_c/ΔP≈1.76 K/GPa.     

Preparation of S-TiO2 photocatalyst and photodegradation of L-acid under visible light

S-doped TiO₂ (S-TiO₂) photocatalyst was synthesized by sol–gel method with tetrabutyl titanate and thiourea as precursor. S-TiO₂ was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV–vis absorption spectroscopy, transmission electron microscopy (TEM) and the photocatalytic activity was evaluated by 1-naphthol-5-sulfonic acid (L-acid) under UV, visible light and solar light radiation. The results showed that doped S could improve photoabsorption property of TiO₂ in the visible region, leading the increase in the photocatalytical activity of TiO₂.

The average particle size of the S-TiO₂ photocatalyst is about 10 nm. The S-TiO₂-4 photocatalyst contains 100% anatase crystalline phase of TiO₂. In the S-TiO₂-4 photocatalyst, S does not exist independently, but is incorporated into the crystal lattice of TiO₂. In the inner crystal lattice of the S-TiO₂-4 photocatalyst, S as S²⁻ replaces O in TiO₂, while on the surface of crystal lattice, S exists as S⁴⁺ and S⁶⁺.

The photocatalytical activity of S-TiO₂-4 photocatalyst for the photodegradation of L-acid is better than that of pure TiO₂. Under the same conditions, the photodegradation efficiency of L-acid for the S-TiO₂-4 photocatalyst and the solar light irradiation is 85.1%, while it is only 26.4% for pure TiO₂. In addition, the final products of the photocatalysis of L-acid using the S-TiO₂-4 photocatalyst are not organic compounds with low molecular weight, but the inorganic compounds.     

Room temperature NO_2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

In this work, we report an enhanced nitrogen dioxide(NO_2) gas sensor based on tungsten oxide(WO_3)nanowires/porous silicon(PS) decorated with gold(Au) nanoparticles. Au-loaded WO_3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy(HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO_3 nanowires. The effect of the Au nanoparticles on the NO_2-sensing performance of WO_3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO_2 at room temperature(25℃). It is found that the 10-? Au-loaded WO_3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO_3 nanowires/porous silicon is also discussed.     

过渡金属Cu、Cr掺杂TiO2表面氧化性气体NO2光学气敏传感特性

采用密度泛函理论（DFT）体系广义梯度近似（GGA）第一性原理平面波超软赝势方法,分析锐钛矿型TiO₂（101）表面吸附NO₂分子光学气敏传感的微观机理.结果表明：Cu和Cr原子易于掺入TiO₂（101）表面,掺杂表面能稳定地吸附NO₂分子且吸附后光学性质发生显著变化.表面吸附NO₂分子后,Cu掺杂TiO₂（101）表面对分子的吸附能最大,吸附后结构更稳定,分子与表面的距离最短.通过分析差分电荷密度和电荷布居数发现,NO₂分子与基底表面间发生电荷转移,转移电子数目：Cu掺杂表面 > Cr掺杂表面 > 无掺杂表面.对比吸收光谱和反射光谱发现,在Cu掺杂表面吸附分子后,光学性质变化最明显,说明表面与吸附分子间氧化还原能力是决定光学气敏传感性能的核心因素.在过渡金属中,Cu与Cr都有4s价电子结构,其4s电子降低了材料表面氧空位的氧化性,增加了其还原性.对于氧化性气体,可以提升表面与分子的氧化还原作用,而Cu的4s电子更加活泼,从而光学气敏传感特性更加明显.因此,Cu掺杂的TiO₂对氧化性气体是一种较好的光学气敏传感材料.     

Magnli相亚氧化钛Ti8O15的电子结构和光学性能的第一性原理研究

采用基于密度泛函理论的平面波超软赝势法研究了Magneli相亚氧化钛Ti8O15的电子结构和光学性能.计算出的能带结构显示Ti₈O₁₅相比锐钛型TiO₂禁带宽度大幅度降低.态密度分析表明,其原因在于Ti₈O₁₅的O原子的2p轨道以及Ti原子的3p,3d轨道相对于TiO₂的相应轨道向左产生了偏移,同时由于O原子的缺失使得Ti原子的3d,3p轨道多余电子在Fermi能级附近聚集形成新的电子能级.态密度分析结果还显示,相对于TiO₂,Ti₈O₁₅Fermi能级附近电子格局发生了如下变化:O原子的2p轨道电子贡献减少,Ti原子的3d轨道的电子对Fermi能级贡献增大.光吸收计算图谱表明,TiO₂仅在紫外光区有较高的光吸收能力,而Ti₈O₁₅由于禁带宽度变窄引起光吸收范围红移到可见光区,从而在紫外光区和可见光区都有较高的光吸收能力,计算结果与实验得到的紫外-可见漫反射吸收光谱结果一致.     

Morphological and electrical properties of SrTiO_3/TiO_2/SrTiO_3 sandwich structures prepared by plasma sputtering

SrTiO_3(STO) and TiO_2 are insulating materials with large dielectric constants and opposite signs of the quadratic coefficient of voltage(α). Insertion of a TiO_2 thin film between STO layers increases the linearity of the capacitance in response to an applied voltage, to meet the increasing demand of large-capacitance-density dynamic random access memory capacitors. Both STO and TiO_2 suffer from the problem of high leakage current owing to their almost equivalent and low bandgap energies. To overcome this, the thickness of the thin TiO_2 film sandwiched between the STO films was varied. A magnetron sputtering system equipped with radio frequency and direct current power supply was employed for depositing the thin films. Ti N was deposited as the top and bottom metal electrodes to form a metal–insulator metal(MIM) structure,which exhibited a very large linear capacitance density of 21 fF/um~2 that decreased by increasing the thickness of the TiO_2 film. The leakage current decreased with an increase in the thickness of TiO_2, and for a 27-nm-thick film, the measured leakage current was 2.0 × 10~(-10) A. X-ray diffraction and Raman spectroscopy revealed that Ti N, STO, and TiO_2 films are crystalline and TiO_2 has a dominant anatese phase structure.