Fe2O3/TiO2纳米管阵列的制备及其光催化性能

在钛基体上采用阳极氧化法制备了TiO₂纳米管阵列,采用化学浴方法在TiO₂纳米管阵列上修饰了Fe₂O₃纳米颗粒.利用扫描电镜、X射线衍射和紫外可见漫反射光谱等手段对材料进行了表征,同时测试了材料的光电化学性能及其光催化降解亚甲基蓝染料废水的性能.结果表明,Fe₂O₃纳米颗粒的修饰将TiO₂纳米管阵列的光响应拓宽至可见光区域,提高了光电流,Fe₂O₃/TiO₂纳米管阵列的光电流是未修饰的TiO₂纳米管阵列的9倍.而在光催化反应中,亚甲基蓝最高降解率可达80%,比未修饰的TiO₂纳米管阵列高出30%.     

TiO2-MoO3复合纳米管阵列薄膜的制备及其可见光活性

通过阳极氧化的方法制备TiO₂纳米管薄膜, 在MoO₃存在的条件下对该薄膜进行热处理得到TiO₂-MoO₃复合纳米管阵列薄膜. 利用X射线衍射(XRD), 扫描电子显微镜(SEM), X射线光电子能谱(XPS), 电化学阻抗谱(EIS), Mott-Schottky 及光电化学方法对得到的薄膜进行了表征. XRD结果表明, TiO₂-MoO₃复合纳米管薄膜中的TiO₂主要为锐钛矿晶型. SEM实验证实了薄膜纳米管结构的存在, 样品中的MoO₃均匀地分散在TiO₂纳米管表面. 利用XPS方法分析了TiO₂-MoO₃复合纳米管薄膜元素的组成, 结果表明, MoO₃在TiO₂表面形成TiO₂-MoO₃复合纳米管薄膜. 研究了热处理温度以及热处理时间对样品的光电化学性能的影响, 相对于单纯TiO₂纳米管薄膜, 适量引入MoO₃提高了样品在可见光区的光电响应能力, 样品的平带电位负移. 在450 °C热处理60 min制得的TiO₂-MoO₃复合半导体纳米管阵列薄膜光电响应活性最高.     

基于铜基底的TiO2纳米管阵列储锂性能

研究了基于铜基底的TiO₂纳米管阵列直接作为锂离子电池电极的储锂性能。以铜基底上生长的Cu(OH)₂纳米棒阵列为模板, 采用自牺牲模板法, 通过外向包覆与内向刻蚀, 制备了非晶态的TiO₂纳米管阵列, 然后将其在500℃下退火处理4 h, 获得锐钛矿型TiO₂纳米管阵列。采用X射线衍射、场发射扫描电镜、透射电镜、热重分析对样品进行表征;采用恒电流充放电、循环伏安和交流阻抗谱测试对退火前后TiO₂纳米管阵列的电化学性能进行研究。结果表明:与非晶态的TiO₂纳米管阵列相比, 锐钛矿型TiO₂纳米管阵列吸附水的含量低, 结晶度高, 电荷迁移阻力小, 锂离子扩散系数大, 结构稳定, 具有更好的循环性能和倍率性能;在0.2 C下, 其首次放电比容量为353 mAh·g^-1, 经过40次循环后的放电比容量仍为243 mAh·g^-1, 在8C下的放电比容量为90 mAh·g^-1。     

浸渍-分解法制备高可见光催化活性的Bi2O3/TiO2纳米管阵列

用浸渍-分解法将Bi₂O₃纳米颗粒沉积在TiO₂纳米管壁上, 制备了Bi₂O₃/TiO₂纳米管阵列. 用电感耦合等离子体发射光谱(ICP-AES)测定了Bi₂O₃/TiO₂ 纳米管阵列的化学组分, 利用X 射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)和紫外-可见(UV-Vis)吸收光谱表征了所制备的样品. 通过在可见光下(λ>400 nm)降解甲基橙(MO)水溶液来评价样品的光催化活性. 结果表明, Bi₂O₃纳米颗粒均匀地沉积在TiO₂纳米管中. Bi₂O₃/TiO₂纳米管阵列具有比纯Bi₂O₃膜和N-TiO₂纳米管阵列高得多的可见光催化活性. Bi₂O₃/TiO₂纳米管阵列活性的增强是其强可见光吸收和Bi₂O₃与TiO₂之间形成的异质结的协同作用的结果.     

脉冲沉积制备Cu2O/TiO2纳米管异质结的可见光光催化性能

在用阳极氧化法制备有序排列TiO₂纳米管阵列薄膜的基础上,引入脉冲沉积工艺,成功实现了均匀、弥散分布的Cu₂O纳米颗粒修饰改性TiO₂纳米管阵列,形成Cu₂O/TiO₂ 纳米管异质结复合材料. 利用场发射扫描电镜（FESEM）、场发射透射电镜（FETEM）、X射线衍射（XRD）、X射线光电子能谱（XPS）和紫外-可见漫反射光谱（UV-Vis DRS）对样品进行表征,重点研究了Cu₂O/TiO₂ 纳米管异质结的光电化学特性和对甲基橙（MO）的可见光催化降解性能. 结果表明,Cu₂O纳米颗粒均匀附着在TiO₂纳米管阵列的管口和中部位置,所制备的Cu₂O/TiO₂ 纳米管异质结具有高效的可见光光催化性能;在浓度为0.01 mol·L^-1的CuSO₄溶液中制得的Cu₂O/TiO₂纳米管异质结表现出最好的电化学特性和光催化性能;另外,对Cu₂O纳米颗粒影响光催化活性的机理进行了讨论.     

Ti3+自掺杂的TiO2(A)/TiO2(R)/In2O3纳米异质结的制备与可见光催化性能

以TiCl₃和InCl₃为Ti源和In源,在不使用还原剂的条件下,首先通过液相沉淀反应制备前驱体沉淀,然后采用后续水热处理制备Ti³⁺自掺杂的TiO₂(A)/TiO₂(R)/In₂O₃纳米异质结,考察了水热处理温度对材料结构和性能的影响。利用X射线衍射、透射电子显微镜、X射线光电子能谱和紫外-可见漫反射光谱对样品进行表征。分别以罗丹明B和苯酚溶液为模拟废水评价了样品的可见光催化降解性能。结果表明,与纯的TiO₂、In₂O₃以及Ti³⁺自掺杂的TiO₂相比,Ti³⁺自掺杂的TiO₂(A)/TiO₂(R)/In₂O₃纳米异质结在可见光区有明显的吸收,并具有良好的可见光催化降解性能,200℃下水热处理24 h所得样品光催化降解罗丹明B的反应速率常数(0.0444 min^-1)分别是纯TiO₂和In₂O₃的17.76倍和8.71倍。瞬态光电流时间响应结果表明样品的光催化性能主要来源于TiO₂(A)/TiO₂(R)/In₂O₃纳米异质结导致的提高的光生电子和空穴分离效率。     

CdS/TiO2纳米管复合结构的制备与光电性能研究

利用阳极氧化法在钛金属基体表面制备一层TiO₂纳米管阵列薄膜, 然后通过水热反应在TiO₂纳米管上负载CdS纳米粒子, 形成CdS/TiO₂纳米管的复合结构。利用SEM、XRD、XPS、UV-Vis等手段对其形貌和结构进行表征。进一步考察了CdS/TiO₂纳米管的光电性能和光催化活性, 结果表明, 相比于TiO₂纳米管, CdS/TiO₂纳米管复合结构在紫外光和可见光下都具有更好的光催化活性及光电性能。     

泡沫镍负载的NiCo2O4纳米线阵列电极的超级电容性能

采用无模板自然生长法制备了泡沫镍支撑的NiCo₂O₄纳米线阵列电极, 利用扫描电镜(SEM)和透射电镜(TEM)观测了纳米线的表面形貌, 利用X射线衍射(XRD)分析了纳米线的结构, 通过循环伏安、恒流充放电和交流阻抗测试了电极的超级电容性能. 结果表明: NiCo₂O₄纳米线直径约为500-1000 nm、长度约为10 μm, 垂直且密集地生长在泡沫镍骨架上. 纳米线阵列电极的放电比容量高达741 F·g^-1, 循环420次后比容量仍保持在655 F·g^-1, 电化学阻抗测试其电荷传递电阻仅为0.33 Ω, 420次循环后电荷传递电阻仅增加0.06 Ω.     

总气压与Ar/O2流量比对直流对向靶磁控溅射TiO2薄膜光催化性能的影响

采用对向靶磁控溅射法在不同气压和Ar/O₂流量比条件下, 以氟化SnO₂ (FTO)导电玻璃为基底制备了多晶TiO₂薄膜. 台阶仪测量结果显示所制备TiO₂薄膜的平均厚度约为200 nm. 随着溅射气压的升高, TiO₂薄膜由锐钛矿与金红石混晶结构转变为纯锐钛矿结构. 分别采用场发射扫描电镜(FESEM)和原子力显微镜(AFM)分析了不同气压和Ar/O₂流量比对TiO₂薄膜表面形貌的影响, 结果显示TiO₂薄膜的表面粗糙度随溅射总气压和Ar/O₂流量比的增加而增大. 以初始浓度为100×10^-6 (体积分数)的异丙醇(IPA)气体为目标物检测所制备TiO₂薄膜的光催化性能, 并分析该气相光催化反应的机理, 在紫外照射条件下异丙醇先氧化为丙酮再被氧化为CO₂.当总溅射气压为2.0 Pa、Ar/O₂流量比为1:1时, 溅射所得TiO₂薄膜具备最优光催化活性并可在IPA降解反应中保持较高的催化活性和稳定性.     

Bi2WO6/TiO2纳米管异质结构复合材料的多模式下的光催化活性比较

以TiO₂纳米管为模板,采用多组分自组装结合水热法制备Bi₂WO₆/TiO₂纳米管异质结构复合材料。通过多种技术如X射线衍射（XRD）,X射线光电子能谱（XPS）,N₂吸附-脱附,扫描电镜（SEM）,高分辨透射电镜（HRTEM）和紫外可见漫反射吸收光谱（UV-Vis DRS）考察所制备样品的组成、结构、形貌、光吸收和电子性质。Bi₂WO₆纳米片或纳米粒子分布在TiO₂纳米管上,形成异质结构。随后,通过在紫外、可见和微波辅助光催化模式下降解染料罗丹明B（RhB）来评价复合催化剂的光催化活性。与TiO₂纳米管和Bi₂WO₆相比,Bi₂WO₆/TiO₂-35纳米管在多模式下表现出更优异的光催化活性。与紫外和可见降解模式相比,Bi₂WO₆/TiO₂-35纳米管在微波辅助光催化模式下对RhB的降解效率最高。这种增强的光催化活性源于适量Bi₂WO₆的引入、纳米管独特的形貌特征和降解模式所引起的增强的量子效率。降解过程中的活性物种被证明是h⁺,·OH和·O₂^-自由基。而且,在微波辅助光催化模式下,可产生更多的·OH和·O₂^-自由基。     

高度有序的二氧化钛纳米管阵列的制备及其光催化活性的研究

采用电化学阳极氧化法在钛表面构筑了一种结构有序、微米级的TiO₂纳米管阵列膜层. 考察了制备电压、氧化时间、溶液搅拌等实验参数对TiO₂纳米管阵列形貌和尺寸的影响. 应用SEM和XRD对膜层的形貌和晶型进行了分析和表征, 并通过TiO₂纳米管阵列膜对甲基橙的光催化降解, 研究了TiO₂纳米管阵列膜层结构与光催化活性的关系. 结果表明: 阳极电压和溶液搅拌对制备TiO₂纳米管阵列的结构起到关键的作用. 控制20 V电压制备的TiO₂纳米管阵列膜, 管长达2.6～3.3 μm, 经500 ℃热处理后具有最高的光催化活性, 其光催化性能明显优于一般的TiO₂纳米颗粒膜.     

Iron oxide nanotube film formed on carbon steel for photoelectrochemical water splitting: effect of annealing temperature

Carbon steels (CSs) were anodized in an ethylene glycol solution containing 3 vol.% H₂O and 0.1 m NH₄F to coat with nanotube arrays film. The as anodized nanotube arrays film were annealed in argon atmosphere at various temperatures ranging from 250 to 550 °C for 4 h. The morphology and crystal phases of the film developed after annealing processes were examined using field emission scanning electron microscopy, X‐ray diffraction. Morphology transforms from nanobube arrays to nanotube bundles at 250 °C, to nanobube bundles with nanoflakes at 350 and 450 °C, to nanotube bundles with nanobelts at 550 °C. Amorphous transformed completely into maghemite at 350 °C and hematite with minor magnetite at 450 and 550 °C. Diffuse reflectance ultraviolet and visible spectra revealed iron oxide nanotube film annealed at 350 °C, or higher than 350 °C behaved tremendous absorbance ability in visible spectra range. Mott–Schottky analysis and linear scan voltammetry were performed in 1 m NaOH to show that iron oxide nanotube film annealed at 450 °C exhibited best charge carrier transfer ability upon illumination and superior photoelectrochemical properties compared with the films annealed at other temperatures. The film annealed at 450 °C displayed the photocurrent density of 0.13 mA cm^?2 at 0.2 V_Ag/AgCl, but the film annealed at other temperatures with the photocurrent densities of lower than 0.05 mA cm^?2 at 0.2 V_Ag/AgCl. The morphology and phase transform of iron oxide nanotube film at different annealing temperature results in the change of their photoelectrochemical properties. Copyright © 2016 John Wiley & Sons, Ltd.     

Fe_2O_3/TiO_2纳米管阵列的制备及其光催化性能

在钛基体上采用阳极氧化法制备了TiO2纳米管阵列,采用化学浴方法在TiO2纳米管阵列上修饰了Fe2O3纳米颗粒。利用扫描电镜、X射线衍射和紫外可见漫反射光谱等手段对材料进行了表征,同时测试了材料的光电化学性能及其光催化降解亚甲基蓝染料废水的性能。结果表明,Fe2O3纳米颗粒的修饰将TiO2纳米管阵列的光响应拓宽至可见光区域,提高了光电流,Fe2O3/TiO2纳米管阵列的光电流是未修饰的TiO2纳米管阵列的9倍。而在光催化反应中,亚甲基蓝最高降解率可达80%,比未修饰的TiO2纳米管阵列高出30%。     

Single‐phase TiO2 formation by plasma oxidation of titanium thin films

Synthesis of titanium oxide film by plasma oxidization of the metallic films is investigated. Argon/oxygen gas mixture in the pressure range 30 × 10^?2 mbar is used for plasma processing at a frequency of 250 kHz. The plasma‐oxidized films are annealed in a tube furnace in argon atmosphere to establish crystalline‐phase formation. X‐ray diffraction and Raman spectroscopic results manifest peaks corresponding to rutile TiO₂. Ultraviolet‐Visible (UV‐Vis) spectroscopic analysis confirms the bandgap of rutile TiO₂, and photoluminescence spectra exhibit peaks due to oxygen defects. Homogeneity across the film's thickness and the nature of the film substrate interface is studied by depth profiling acquired using secondary ion mass spectrometry. Copyright © 2015 John Wiley & Sons, Ltd.     

Fabrication of a self‐doped TiO2 nanotube array electrode for electrochemical degradation of methyl orange

Self‐doped TiO₂ nanotube array (DTNA) electrodes were fabricated through anodic oxidation combined with cathodic reduction. The morphology and structural features of pristine TiO₂ nanotube arrays and DTNA electrodes were studied through scanning electron microscopy, X‐ray diffractometry, and X‐ray photoelectron spectroscopy. An accelerated life test was used to test the electrode service lifetime and thus the electrode's stability. The service lifetime of the DTNA electrode prepared at constant 40 V for 6 hr was approximately 338.7 hr at constant 1 mA/cm² in a 1 M NaClO₄ solution. Methyl orange (MO) was employed as the degradation probe for measuring electrochemical oxidation performance. The color removal rate of 200 mg/L MO of the DTNA electrode (85.2% at 1 mA/cm²) was greater than that of the Ti/IrO₂ electrode (31.1% at 1 mA/cm²). The larger the surface area of the DTNA electrode is, the more conductive the electrode is for the degradation of organic substances. Organic degradation on the DTNA electrode occurred primarily through an indirect pathway (producing [?OH]).     

Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior

Randomly oriented ferroelectric BaTiO₃ and (Ba_0.6Sr_0.4) TiO₃ thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 µC/cm² and a coercive field of 43.4 kV/cm for BaTiO₃ films annealed at 800°C for 1 h. Corresponding parameters for (Ba_0.6Sr_0.4)TiO₃ films annealed at 800°C were found to be 7.2 µC/cm² and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 µm in size. The leakage current for (Ba_0.6Sr_0.4)TiO₃ films was found to be two orders of magnitude lower than that for BaTiO₃ films.     

TiO2 nanotube array film prepared by anodization as anode material for lithium ion batteries

TiO₂ array film fabricated by potentiostatic anodization of titanium is characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and charge–discharge measurements. The XRD results indicated that the TiO₂ array is amorphous, and after calcination at 500 °C, it has the anatase form. The pore size and wall thickness of TiO₂ nanotube arrays synthesized at different anodization voltages are highly dependent on the applied voltage. The electrochemical performance of the prepared TiO₂ nanotube array as an electrode material for lithium batteries was evaluated by galvanostatic charge–discharge measurement. The sample prepared at 20 V shows good cyclability but low discharge capacity of 180 mA h cm⁻³, while the sample prepared at 80 V has the highest discharge capacity of 340 mA h cm⁻³.     

TiO2 nanotube, nanowire, and rhomboid-shaped particle thin films fixed on a titanium metal plate

Titanium dioxide thin films having various nanostructures could be formed by various treatments on sodium titanate nanotube thin films approximately 5 μm thick fixed on titanium metal plates. Using an aqueous solution with a lower hydrochloric acid concentration (0.01 mol/L) and a higher reaction temperature (90 °C) than those previously employed, we obtained a hydrogen titanate nanotube thin film fixed onto a titanium metal plate by H⁺ ion-exchange treatment of the sodium titanate nanotube thin film. Calcination of hydrogen titanate nanotube thin films yielded porous thin films consisting of anatase nanotubes, anatase nanowires, and anatase nanoparticles grown directly from the titanium metal plate. H⁺ ion-exchange treatment of sodium titanate nanotube thin films at 140 °C resulted in porous thin films consisting of rhomboid-shaped anatase nanoparticles.     

Preparation and Characterization of TiO2 Thin Films by Sol-Gel Method

Titanium dioxide (TiO₂) thin films have been deposited on silicon and glass substrates by the sol-gel process using titanium iso-propoxide [Ti(O-i-C₃H₇)₄]. The bond configuration of the TiO₂ thin films was analyzed by using FTIR in the wavenumber range from 400 to 4000 cm^–1. The spectral transmittance of as-deposited TiO₂ films deposited on fused silica glass was measured in the wavelength range from 200 to 900 nm. X-ray diffraction measurements were performed to determine the crystallinity of the TiO₂ films. As-deposited films were amorphous. As the film was annealed at higher temperature, the structure was transformed from amorphous to the anatase crystalline state. The chemical composition of the deposited film was investigated using X-ray photoelectron spectroscopy (XPS). The films are essentially stoichiometric with carbon as the dominant impurity on the surface. Raman spectra show the characteristic of TiO₂ anatase phase. The electrical properties of the TiO₂ films were measured using capacitance-voltage (C-V) and current-voltage techniques. From C-V measurements, the dielectric constants were calculated to be approximately 26 for the as-deposited films and 75–82 for films annealed at 700°C in different atmosphere. For the as-deposited samples, the breakdown voltage was 2.7 MV/cm, and for an electric field of 1 MV/cm, the leakage current was 5 × 10^–5 A/cm² and the resistivity was 2.2 × 10¹⁰ -cm.