Single‐phase TiO2 formation by plasma oxidation of titanium thin films |
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| Authors: | Deepti A Rukade Varsha Bhattacharyya |
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| Affiliation: | Department of Physics, University of Mumbai, Mumbai, India |
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| Abstract: | Synthesis of titanium oxide film by plasma oxidization of the metallic films is investigated. Argon/oxygen gas mixture in the pressure range 30 × 10?2 mbar is used for plasma processing at a frequency of 250 kHz. The plasma‐oxidized films are annealed in a tube furnace in argon atmosphere to establish crystalline‐phase formation. X‐ray diffraction and Raman spectroscopic results manifest peaks corresponding to rutile TiO2. Ultraviolet‐Visible (UV‐Vis) spectroscopic analysis confirms the bandgap of rutile TiO2, and photoluminescence spectra exhibit peaks due to oxygen defects. Homogeneity across the film's thickness and the nature of the film substrate interface is studied by depth profiling acquired using secondary ion mass spectrometry. Copyright © 2015 John Wiley & Sons, Ltd. |
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| Keywords: | plasma oxidation titanium films rutile TiO2 |
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