Fano interference in intrasubband Raman scattering of semiconductor superlattices

Fano’s theory is used to study the interaction between a continuum of Raman-active electronic intrasubband transitions and a discrete LO-phonon state in a semiconductor superlattice (SL). An explicit analytical expression of the asymmetry parameter q has been derived, which indicates the possibility of the occurence of Fano interference in intrasubband Raman scattering in suitably designed SL structures. The analytical expression clearly shows that q not only depends strongly on the SL parameters, but also depends sensitively on the exciting wavelength. The corresponding suitable design and preparation of SL samples and the performance of Raman experiments have also been carefully carried out for the first time. The theoretical calculations and experimental measurements show good qualitative and quantitative agreement.     

ELECTRON-INTERFACE PHONON SCATTERING IN ASYMMETRIC SEMICONDUCTOR QUANTUM WELL STRUCTURES

Electron-interface phonon scattering rates in asymmetric single quantum well and step quantum well structures are calculated by means of the interaction Fr?hlich-like Hamiltonian between an electron and interface optical phonons in a four-layer heterostructure given re-cently. The intrasubband and intersubband electron scattering rates are given as functions of quantum well width, step width and step height. We have found that the electron scattering depends strongly on the potential parameters and the usual selection rules for these tran-sitions are broken down in asymmetric heterostructures; the interface LO modes are more important than the interface TO modes for the electron-interface phonons scattering in het-erostructures; the intrasubband scattering rates are insensitive functions of step width and step height, and the intersubband scattering rates are complicated functions of step height and step width in step quantum wells. Moreover, we have also observed that the scattering rates for intrasubband and intersubband transitions have no obvious changes in the case that the first or second subband energy level crosses the step height in a step quantum well.     

Ultrafast dynamics of intersubband excitations in a quasi-two-dimensional hole gas

We present the first study of ultrafast hole dynamics after resonant intersubband excitation in a quasi-two-dimensional semiconductor. p-type Si0.5Ge 0.5/Si multiple quantum wells are studied in pump-probe experiments with 150 fs midinfrared pulses. Intersubband scattering from the second heavy-hole back to the first heavy-hole subband occurs with a time constant of 250 fs, followed by intrasubband carrier heating within 1 ps. Such processes give rise to a strong reshaping of the intersubband absorption line, which is accounted for by calculations of the subband structure, optical spectra, and hole-phonon scattering rates.     

Surface collective excitations and Raman intensity in a semiconductor superlattice topped with a metal-insulator layer

A model of semi-infinite semiconductor superlattice topped with a metal-insulator layer (M-I-SL) is suggested. A new type of surface plasmons with null critical wave vector below the bulk plasmon band has been found. Calculations of Raman intensity show that both the separation between peaks of the surface and bulk modes and the spectral weight of the surface part are favourable for observation of intrasubband and intersubband surface plasmons in this system experimentally.     

Energy relaxation mechanism in Landau level system of quantum wells

Kinetics of intrasubband energy relaxation of electrons in the system of Landau levels lying below the optical phonon energy is studied. Extraordinary behavior of the relaxation of electronic subsystem excitation energy is detected. Despite the fact that its main channel is optical phonon emission, the total relaxation time exceeds the characteristic times of scattering on optical phonons by several orders of magnitude.     

银纳米线表面等离激元波导的能量损耗

金属纳米结构的表面等离激元可以突破光学衍射极限,为光子器件的微型化和集成光学芯片的实现奠定基础.基于表面等离激元的各种基本光学元件已经研制出来.然而,由于金属结构的固有欧姆损耗以及向衬底的辐射损耗等,表面等离激元的传输能量损耗较大,极大地制约了其在纳米光子器件和回路中的应用.研究能量损耗的影响因素以及如何有效降低能量损耗对未来光子器件的实际应用具有重要意义.本文从纳米线表面等离激元的基本模式出发,介绍了它在不同条件下的场分布和传输特性,在此基础上着重讨论纳米线表面等离激元传输损耗的影响因素和测量方法以及目前常用的降低传输损耗的思路.最后给出总结以及如何进一步降低能量损耗方法的展望.表面等离激元能量损耗的相关研究对于纳米光子器件的设计和集成光子回路的构建有着重要作用.     

Phonon-assisted normal incidence intersubband absorption in semiconductor quantum wells

In the presence of a normally incident mid-IR pulsed laser field, phonon-assisted photon absorption by both intrasubband and intersubband phonon scattering of conduction electrons in GaAs/AlGaAs quantum wells are predicted. The novel non-resonant and non-linear intersubband absorption is found by including the photon-induced phonon scattering process in a Boltzmann equation for phonon energies smaller than the energy separation between two electron subbands in the quantum well. The predicted phonon-assisted photon absorption by intersubband transitions of electrons from the first to the second subband is a unique feature in quantum-well systems and is expected to have a significant effect on the electron populations in both subbands.     

Effect of adsorption on the surface mobility of charge carriers in a semiconductor substrate

The effect of adsorption on the carrier mobility in the near-surface region of a semiconductor substrate has been investigated within the framework of the Schrieffer model. The dependence of the carrier surface mobility on the concentration of adatoms has been determined. The systems chosen for the study are the gases adsorbed on the surface of semiconductor oxides. Empirical estimates of the surface mobility, which are based on modification of conventional volume scattering mechanisms, have been proposed.     

Scattering by polar-optical phonons in a quasi-two-dimensional semiconductor

The scattering rate and momentum relaxation time for scattering of electrons in the quasi-two-dimensional quantized levels of an inversion or accumulation layer on a semiconductor surface is calculated for interactions via the polar-optical phonon. This interaction represents an important scattering mechanism in compound semiconcudctors. The quantization of the motion perpendicular to the surface enhances the scattering by this process over the bulk scattering.     

Energy losses of 2D electron gas due to near-surface acoustic phonon scattering

We have shown that for quantum wells placed close to the stress-free surface of the semiconductor heterostructure, the energy relaxation rate of two-dimensional electrons interacting with acoustic phonons at low temperatures (Bloch–Grüneisen regime) is changed considerably in comparison with that of a two-dimensional electron gas placed in a bulk of semiconductor. The relaxation rate is enhanced in the case of a semiconductor–vacuum system and is suppressed in the case of the surface covered by a thin metal film. The enhanced energy loss is caused by additional scattering at localized and reflected acoustic waves, and the decrease appears due to suppression of piezoelectric scattering in the vicinity of the metal.     

Intersubband relaxation of hot carriers in quantum well systems

We use an ensemble Monte Carlo simulation of coupled electrons, holes and nonequilibrium polar optical phonons in multiple quantum well systems to model the intersubband relaxation of hot carriers measured in ultra-fast optical experiments. We have investigated the effect of various models of confined photon modes on the energy relaxation and intersubband transition rate in single quantum well and coupled well systems. In particular, the symmetry of the atomic displacement with respect to the quantum well has a marked effect on the relative intersubband versus intrasubband scattering rates, depending on whether one considers electrostatic boundary conditions(slab modes) or mechanical boundary conditions(guided modes). In single quantum wells systems, the overall intersubband relaxation time is not found to be strongly dependent on the confined mode model used due to competing effects of hot phonons and the relative intrasubband scattering rates. For coupled well systems, the relaxation rate is much more dependent on the exact nature of the phonon amplitude. Large effects are found associated with localized AlAs interface modes which dominate the intersubband relaxation time.     

Inelastic scattering of electrons by vibrational motion of molecules adsorbed at metal surfaces

A model for computing the inelastic scattering power of infrared active molecular vibrations for low energy electrons reflected from gas-covered metal surfaces is constructed and the results are compared to recent observations. The metallic substrate has two major effects on the inelastic intensity: (i) at or near normal incidence, reflected electrons can strongly excite vibrations perpendicular to the surface, a process which is forbidden for forward acattering (and also for excitation by normally incident infrared light); (ii) the inelastic cross section for low energy electrons is enhanced as a result of image effects. The theory also predicts that the observed inelastic intensity should be highly sensitive to the spectrometer aperture.     

ZnSe-ZnS应变超晶格的Raman散射

本文报导了Znse—ZnS应变超晶格的Raman光学声子谱.我们观测到,随着应变大小的改变,ZnSe和ZnS的纵向光学声子发生频移.ZnSe层中纵向光学声子可发生较大的蓝移,也可发生较小的红移;ZnS层中的纵向光学声子发生较大的红移.这些现象为“应变场下的光学模理论”所解释.文中还报导了在波数为110cm-1处观测到一很强的散射峰,并把它归结为超晶格表面层单斜Se所引起的散射;在其它地方还观测到非晶态Se、三角Se引起的散射峰.     

Intensity of intersubband electron scattering by polar optical phonons in semiconductor quantum wires with account of energy level broadening

An approach describing the effect of energy level broadening in semiconductor quantum wires on the intensity of intersubband electron scattering by polar optical phonons is suggested. As a broadening mechanism, scattering by atomic thermal vibrations and by the roughness of the confining surfaces of a quantum system is considered. It is shown that in this case the dependence of the intensity of intersubband scattering of electrons on their kinetic energy has no singularities.     

Heating and cooling of a two-dimensional electron gas by terahertz radiation

The absorption of terahertz radiation by free charge carriers in n-type semiconductor quantum wells accompanied by the interaction of electrons with acoustic and optical phonons is studied. It is shown that intrasubband optical transitions can cause both heating and cooling of the electron gas. The cooling of charge carriers occurs in a certain temperature and radiation frequency region where light is most efficiently absorbed due to intrasubband transitions with emission of optical phonons. In GaAs quantum wells, the optical cooling of electrons occurs most efficiently at liquid nitrogen temperatures, while cooling is possible even at room temperature in GaN heterostructures.     

Monte Carlo方法研究低能电子束曝光沉积能分布规律

建立一个描述低能电子在多元多层介质中散射的物理模型,运用MonteCarlo方法模拟低能电子在靶体胶衬底中的复杂散射过程,在此基础上通过大量计算研究入射束能、胶层厚度、衬底材料等不同曝光条件对抗蚀剂沉积能密度分布的影响,获得沉积能分布规律:适量的低束能、薄胶层、低原子序数衬底可以使前散射电子对胶中沉积能密度分布的贡献增大、背散射电子的贡献减小,从而提高曝光分辨率. 关键词： 电子束曝光 MonteCarlo方法 低能电子散射 能量沉积     

Time-dependent scattering of a standing surface plasmon by rapid ionization in a semiconductor

Scattering of a standing surface plasmon by rapid ionization in a semiconductor is investigated. We show that, for a standing plasmon, in contrast with a traveling plasmon, the scattering depends on the plasmon phase at the moment of ionization. By changing the moment of ionization, we can control the energy that is transferred into newly excited modes, which include a frequency-upshifted standing surface plasmon, transient outgoing radiation, and free-streaming currents with a static magnetic field in the semiconductor. The phenomena that are described open new possibilities for probing the dynamics of surface excitations in semiconductors on an ultrashort time scale.     

Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation

This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photolumi-nescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnet-ism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN.     

Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1－xdx Se strained heterojunction

With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1-xCdxSe strained heterojunction under hydrostatic pressure by considering the intersubband and intrasubband scattering from the optical phonon modes. A triangular potential approximation is adopted to simplify the potential of the conduction band bending in the channel side and the electronic penetrating into the barrier is considered by a finite interface potential in the adopted model. The numerical results with and without strain effect are compared and analysed. Meanwhile, the properties of electronic mobility under pressure versus temperature, Cd concentration and electronic density are also given and discussed, respectively. It shows that the strain effect lowers the mobility of electrons while the hydrostatic pressure effect is more obvious to decrease the mobility. The contribution induced by the longitudinal optical phonons in the channel side is dominant to decide the mobility. Compared with the intrasubband scattering it finds that the effect of intersubband scattering is also important for the studied material.     

Faraday rotation in the presence of deep repulsive traps

The Faraday rotation is investigated in the general case for any mechanism of the energy and momentum scattering of hot electrons in the strong and weak magnetic field limits and under the condition when the free carriers are captured by deep repulsive traps. For some definite scattering mechanisms the investigations are carried out in the presence of any finite value of the magnetic field. The possibility of using the results for the estimation of some of the semiconductor parameters and for the determination of the dominant scattering mechanism is discussed. The calculations are carried out assuming a parabolic law of dispersion and a scalar effective mass.