|
|||||
|
|
Preparation and characterization of room-temperature ferromagnetism GaMnN based on ion implantation |
|
| Authors: | |
| Institution: | 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China 2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Institute for Materials Research, Tohoku University, Sendai, Japan 3. Institute for Materials Research, Tohoku University, Sendai, Japan 4. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
| Abstract: | This paper reports the fabrication of GaMnN ferromagnetic semiconductor on GaN substrate by high-dose Mn ion implantation. Both the structural and optical properties for Mn+-implanted GaN material were studied by X-ray diffraction, Raman scattering and photolumi-nescence. The results reveal that the implanted manganese incorporates on Ga site and GaMnN ternary phase is formed in the substrate. The magnetic behavior has been characterized by superconducting quantum interference device. The material shows room-temperature ferromagnet-ism. The temperature-dependent magnetization indicates different mechanism for ferromagnetism in Mn+-implanted GaN. |
| Keywords: | diluted magnetic semiconductor Curie temperature SQUID |
| 本文献已被 CNKI 万方数据 SpringerLink 等数据库收录！ | |