掺铋离子BaO-B2O3玻璃的制备及其近红外发光性能的研究

采用高温熔融法制备了掺Bi离子的BaO-B₂O₃玻璃, 测定了样品玻璃的近红外以及可见光区的激发、 发射谱、 荧光衰减曲线以及Raman光谱. 在808 nm波长光的激发下, 在掺Bi离子的BaO-B₂O₃玻璃中发现了近红外发光现象, 且存在多个发光峰, 讨论了玻璃网络结构对Bi离子发光的影响, 对其发光机理进行了初步的探讨.     

Spectroscopic study of optical centers formed in Bi-, Pb-, Sb-, Sn-, Te-, and In-doped germanate glasses

We have shown that the broadband near-IR (NIR) fluorescence recently discovered in Bi-doped glasses is not specific due solely to Bi ions. Glasses doped with different 6p (Bi, Pb) and 5p (Sn, Sb) ions exhibit very similar behavior characterized by four major spectral peaks observed in two-dimensional excitation-emission plots and the lifetime of metastable level of about 400 mus. Our results challenge the existing models of optical centers in Bi-doped glasses. Point defect optical centers caused by the presence of 6p (Bi, Pb) and 5p (Sn, Sb) ions are proposed for the explanation of NIR emission in these laser materials.     

Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2Sa chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS2-2OGa2 Sa：O.fBi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum （FWHM） is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2Sa chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi＋. Raman scattering is also conducted to claxify the structure of glasses. These Bi-doped GeS2 Ga2Sa chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.     

双包层掺Bi光纤的制备及其光谱特性研究

用改进的化学气相沉积方法和溶液掺杂方法制备了掺Bi双包层石英基光纤. 测试了掺Bi光纤预制棒切片的吸收光谱和掺Bi光纤在特定波长下的吸收系数,在不同波长的激光激发下, 研究了掺Bi光纤的近红外荧光光谱. 掺Bi光纤在976 nm激光激发下,其荧光光谱范围在1000---1400 nm之间, 荧光峰的峰值位于1140 nm附近,半高宽约为130 nm;在793和808 nm激光激发下得到了 1000---1700 nm的超宽带近红外荧光,半高宽超过250 nm.通过对掺Bi光纤预制棒切片进行900 ℃ 保温1 h的热处理后,发现在808 nm激光 激发下预制棒切片的荧光强度增加了近4倍.研究结果表明,具有超宽带荧光特性的双包层掺Bi光纤 有望作为超短脉冲激光器和可调谐激光器的增益介质.     

Study on highly visible light active Bi-doped TiO2 composite hollow sphere

Bi-doped hollow titania spheres were prepared using carbon spheres as template and Bi-doped titania nanoparticles as building blocks. The Bi-doped titania nanoparticles were synthesized at low temperature. The prepared hollow spheres were characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), UV-vis diffuse reflectance spectrum (DRS) and X-ray photoelectron spectroscopy (XPS). The effects of Bi content on the physical structure and photocatalytic activity of doped hollow titania sphere samples were investigated. Results showed that there was an optimal Bi-doped content (4%) for the photocatalytic degradation of methylene blue (MB).     

Au/Bi共掺二氧化硅薄膜的制备及近红外光谱调控

根据X射线光电子能谱分析和选择性光致发光谱测试结果,探讨了Bi离子掺杂非晶二氧化硅薄膜的近红外发光来源。我们认为非晶二氧化硅薄膜中Bi离子的近红外发光来源于低价态Bi~+离子从轨道~3P_1层到~3P_0层的辐射复合跃迁和Bi~0从轨道~2D_(3/2)层到~4S_(3/2)层的辐射复合跃迁。此外,本文利用限制性晶化原理,通过在掺Bi二氧化硅薄膜中引入Au离子,实现了Bi离子相关的近红外发光峰位可调,荧光强度增大了300%。高分辨透射电子显微镜截面图片证实了非晶二氧化硅薄膜厚度约为90 nm以及不同尺寸、数密度Au量子点的形成。变温光致发光谱测试结果表明,部分Au离子可有效降低Bi离子掺杂非晶二氧化硅薄膜中羟基集团等非辐射复合中心密度。Bi离子掺杂非晶二氧化硅薄膜近红外发光来源的探讨以及通过Au量子点调控Bi离子近红外发光性质的讨论将有助于未来掺Bi发光材料的相关研究。     

溶胶-凝胶法制备Bi3+,Yb3+单掺和共掺Gd2O3荧光粉及其荧光性能

利用溶胶-凝胶法制备了Bi³⁺、Yb³⁺单掺和共掺的Gd₂O₃荧光粉。研究了Gd_2-x-yO₃: Bi_x³⁺,Yb_y³⁺的制备条件并表征了Gd_2-x-yO₃: Bi_x³⁺,Yb_y³⁺的荧光性能。 由于Gd₂O₃: Bi³⁺,Yb³⁺中Bi³⁺对Yb³⁺的能量传递,Gd₂O₃: Bi³⁺,Yb³⁺在Bi³⁺的特征激发峰338 nm激发时,可以产生Yb³⁺的900~1 100 nm近红外特征发射和Bi³⁺的400~700 nm特征发射的两个波段光谱。所制备的Gd₂O₃: Bi³⁺,Yb³⁺荧光材料可将太阳光谱中硅太阳能电池吸收较弱的300~400 nm光转换成有较强吸收的500~700 nm 和1 000 nm附近的近红外光子,提高硅太阳能电池的光伏效率。     

结构自还原效应对铋掺碱土金属硅磷铝硼玻璃超宽带近红外发光的影响

本文报道了结构自还原对铋掺杂碱土金属硅磷铝硼玻璃超宽带近红外发光性质的影响. 以Eu作为对比, 在空气气氛中采用高温熔融法分别制备了Eu₂O₃和Bi₂O₃掺杂的35SiO₂-25AlPO₄-12.5Al₂O₃-12.5B₂O₃-15RO(R=Ca,Sr,Ba) 玻璃. 结果证实该玻璃中可发生Eu³⁺→Eu²⁺的高温自还原现象, 且随着碱土金属离子半径增大Eu²⁺ 的自还原性减弱; 同样条件下Bi位于1300 nm波段的近红外发光却随之增强, 而位于1100 nm波段近红外发光和源于Bi²⁺的红光则减弱. 根据结构自还原机理及碱土离子半径变化对玻璃近红外超宽带发光性质的影响, 讨论了Bi离子的近红外发光中心的归属. 上述研究表明玻璃结构自还原特性可以为Bi近红外发光机理研究以及高效Bi掺杂超宽带近红外发光玻璃的设计提供一种有效的思路和方法. 关键词： 玻璃 铋掺杂 近红外发光 自还原效应     

Sensitized broadband near-infrared luminescence from bismuth-doped silicon-rich silica films

Developing Si compatible optical sources has attracted a great deal of attention owing to the potential for forming inexpensive, monolithic Si-based integrated devices. In this Letter, we show that ultra broadband near-IR (NIR) luminescence in the optical telecommunication window of silica optical fibers was obtained for Bi-doped silicon-rich silica films prepared by a co-sputtering method. Without excess Si, i.e., Bi-doped pure silica films, no luminescence was observed in the NIR range. A broad Bi-related NIR photoluminescence appears when excess Si was doped in the Bi-doped silica. The luminescence properties depended strongly on the amount of excess Si and the annealing temperature. Photoluminescence results suggest that excess Si acts as an agent to activate Bi NIR luminescence centers and also as an energy donor to transfer excitation energy to the centers. It is believed that this peculiar structure might find some important applications in Si photonics.     

红色Bi4 Ge3 O12晶体在低温下的发光性能

用下降法制备了Bi₄Ge₃O₁₂晶体,发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi₄Ge₃O₁₂晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi₄Ge₃O₁₂在1 150 nm等波长处有较强的发射峰,强度随温度降低而增强,衰减时间为几百μs。     

The effect of P2O5 on the ultra broadband near-infrared luminescence from bismuth-doped SiO2-Al2O3-CaO glass

The effect of P₂O₅ on infrared luminescence properties of bismuth-doped SiO₂-Al₂O₃-CaO (SAC) glass was investigated. Under excitation of 690 and 808 nm LD, two infrared emissions from bismuth ions central at 1100 and 1300 nm were observed, respectively. The addition of P₂O₅ was not only found to lead to the increase of full width at half maximum (FWHM) of two infrared emissions, but also result in intensity variety of the infrared emissions. The intensity of the infrared emission located at 1300 nm is reduced by a factor of 2, while the luminescence at 1110 nm is increased by a factor of 5. We propose that the infrared emissions at 1100 and 1300 nm may originate from different valence Bi ion in glasses. Compared with emission at 1300 nm, the infrared emissions at 1100 nm is more possibly from the transition of lower valent Bi ion.     

Optical character of Er/Yb co-doped P2O5-CaO-Na2O-Al2O3-AgO phosphate glass

The up-conversion (UC) and near infrared (NIR) luminescence of Er³⁺/Yb³⁺ co-doped phosphate glass are investigated. In the UC emission range, the 523 nm, 546 nm green emissions and the 659 nm red emission are observed. With the increasing pump power, the intensity ratios of I₅₂₃/I₆₅₉, I₅₄₆/I₆₅₉ and I₅₂₃/I₅₄₆ increase gradually. The phenomenon is reasonably interpreted by theoretical analysis based on steady state rate equations. The emission cross section of the infrared emission at 1546 nm is larger (about 6.7 × 10^− 21 cm²), which is suitable for making fiber amplifier.     

The rotational spectrum of BiO radical in its X1Π1/2 and X2Π3/2 states

Rotational spectra have been observed for BiO produced in a DC discharge through a low pressure mixture of O₂, Ar, and Bi vapor. Because of the highly non-thermal distribution of states, it has been possible to observe spectra arising from the X₁²Π_1/2 level up to v = 9 and for the X₂²Π_3/2 level up to v = 5 near 10 538 cm⁻¹. Precise rotational and hyperfine parameters have been determined for the observed states. By using available near infrared (NIR) data in a merged fit, the 0-0 and 1-1 fine structure intervals have been more precisely determined. Although the quality of the fit is very good, the interpretation of the hyperfine constants is complicated by relativistic effects and the interaction of the X₂ state with A₁⁴Π_3/2 state. The magnetic and quadrupole coupling constants will be compared with those of the Bi atom and related molecules.     

Synthesis and laser patterning of Bi-doped Y3Fe5O12 crystals in germanosilicate glasses

New germanosilicate glasses giving the crystallization of yttrium iron garnet Y₃Fe₅O₁₂ (YIG) and Bi-doped YIG, 23Na₂O-xBi₂O₃-(12−x)Y₂O₃-25Fe₂O₃-20SiO₂-20GeO₂ (mol%), are developed, and the laser-induced crystallization technique is applied to the glasses to pattern YIG and Bi-doped YIG crystals on the glass surface. It is clarified from the Mössbauer effect measurements that iron ions in the glasses are present mainly as Fe³⁺. It is suggested from the X-ray diffraction analyses and magnetization measurements that Si⁴⁺ ions are incorporated into YIG crystals formed in the crystallization of glasses. The irradiations (laser power: 32-60 mW and laser scanning speed: 7 μm/s) of continuous wave Yb:YVO₄ fiber laser (wavelength: 1080 nm) are found to induce YIG and Bi-doped YIG crystals, indicating that Fe³⁺ ions in the glasses act as suitable transition metal ions for the laser-induced crystallization. It is suggested that YIG and Bi-doped YIG crystals in the laser irradiated part might orient. The present study will be a first step for the patterning of magnetic crystals containing iron ions in glasses.     

Bi3+掺杂对Sr2MgSi2O7∶Eu2+荧光粉的结构及发光性能的影响

采用溶胶-凝胶法在还原气氛下制备了Sr₂MgSi₂O₇∶Eu²⁺,xBi³⁺(x=0,0.02,0.04,0.06,0.08,0.1)荧光粉,并用XRD、TG-DTA及激发与发射谱仪对样品的结构及发光性能进行了表征。结果发现:单掺杂Bi³⁺的Sr₂MgSi₂O₇样品的发射光谱所用的材料的激发光谱为一主峰为286 nm的宽带谱,这是由于激发态时Bi³⁺的³P₁→¹S₀电子能级跃迁而造成的;单掺杂Eu²⁺的Sr₂MgSi₂O₇样品的发射光谱所用的材料的激发光谱为一主峰为358 nm的宽带谱,这是典型的Eu²⁺的4f⁶5d¹→4f⁷跃迁而引起的。当Bi³⁺离子掺杂到Sr₂MgSi₂O₇∶Eu²⁺样品的摩尔分数为0.04时,样品的发射强度是未掺杂Bi³⁺离子样品的1.9倍。     

合成温度和N2/O2流量比对碳纤维衬底上生长的SnO2纳米线形貌及场发射性能影响

采用化学气相沉积法系统研究了合成温度和N₂/O₂流量对生长在碳纤维衬底上的SnO₂纳米线形貌及场发射性能的影响规律. 利用扫描电镜(SEM)、透射电镜(TEM), X射线衍射(XRD)及能谱仪(EDS)对产物细致表征, 结果表明, SnO₂纳米线长径比随反应温度的升高而增大; 随N₂/O₂流量比值的增大先增大后变小, 场发射测试表明, 合成温度780 ℃, N₂/O₂流量比为300 : 3 时SnO₂纳米线阵列具有最佳的场发射性能, 开启电场为1.03 V/μm, 场强增加到1.68 V/μm时, 发射电流密度达0.66 mA/cm², 亮度约2300 cd/m².     

Eu3+和Bi3+共掺杂锆酸钡荧光粉的制备及发光性质研究

在还原气氛下采用高温固相法制备了BaZrO₃∶0.05Bi,xEu(x=0, 0.010,0.025,0.050)荧光粉,并研究了其发光性能。研究证实：Bi,Eu共掺杂的BaZrO₃荧光粉在近紫外340 nm 激发下,具有来自于Bi3+的宽带发射峰和Eu3+的特征发射;Bi3+对Eu3+具有能量传递和敏化作用,通过Bi3+和Eu3+之间的能量传递获得了具有白色发光的BaZrO₃荧光粉。     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Electromechanical properties and dielectric behavior of (Bi1/2Na1/2)(1−1.5x)BixTiO3 lead-free piezoelectric ceramics

Bismuth doped bismuth sodium titanate ceramics [(Bi_1/2Na_1/2)_(1−1.5x)Bi_xTiO₃, x=0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm² and a relatively low coercive field of 71 kV/cm, while their d₃₃ and k_p reach a maximum value of 95 pC/N and 21%, respectively.     

Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi,Sb) using high pressure techniques

An investigation of the problem of controlled doping of amorphous chalcogenide semiconductors utilizing a Bridgman anvil high pressure technique, has been undertaken. Bulk amorphous semiconducting materials (GeSe_3.5)_100-x doped with M = Bi (x = 2, 4, 10) and M = Sb (x = 10) respectively are studied up to a pressure of 100 kbar down to liquid nitrogen temperature, with a view to observe the impurity induced modifications. Measurement of the electrical conductivity of the doped samples under quasi-hydrostatic pressure reveals that the pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x = 4, 10) semiconductors are markedly different. The pressure effects in Sb-doped semiconductors are quite different from those in Bi-doped material.